Abstract: Various embodiments of the disclosure are directed to a semiconductor package and a method for fabrication of the semiconductor package. Further, disclosed herein are systems and methods that are directed to using a photoimagable dielectric (PID) layer with substantially similar mechanical properties as that of a mold material. The disclosure can be used, for example, in the context of bumpless laserless embedded substrate structures (BLESS) technology for wafer/panel level redistribution layer (RDL) and/or fan-out packaging applications. The disclosed embodiments may reduce the need for multiple dry resist film (DFR) lamination steps during various processing steps for semiconductor packaging and can also facilitate multiple layer counts due to the availability of thin PID materials.

Abstract: Embodiments may relate to a semiconductor package that includes a die and a glass core coupled with the die. The glass core may include a cavity with an interconnect structure therein. The interconnect structure may include pads on a first side that are coupled with the die, and pads on a second side opposite the first side. Other embodiments may be described and/or claimed.

Abstract: Embodiments include a package substrate, a method of forming the package substrate, and a semiconductor package. A package substrate includes a conductive layer in a dielectric, a first trace and a first via pad of the conductive layer having a first thickness, and a second trace and a second via pad of the conductive layer having a second thickness. The second thickness of second trace and second via pad may be greater than the first thickness of the first trace and first via pad. The dielectric may include a first dielectric thickness and a second dielectric thickness, where the second dielectric thickness may be less than the first dielectric thickness. The package substrate may include a third via having a third thickness on the first via pad, and a fourth via having a fourth thickness on the second via pad, wherein the third thickness is greater than the fourth thickness.

Abstract: Techniques are provided for an inductor at a first level interface between a first die and a second die. In an example, the inductor can include a winding and a core disposed inside the winding. The winding can include first conductive traces of a first die, second conductive traces of a second die, and a plurality of connectors configured to connect the first die with the second die. Each connector of the plurality of connecters can be located between a trace of the first conductive traces and a corresponding trace of the second conductive traces.

Abstract: Techniques are provided for an inductor at a second level interface between a first substrate and a second substrate. In an example, the inductor can include a winding and a core disposed inside the winding. The winding can include first conductive traces of a first substrate, second conductive traces of a second non-semiconductor substrate, and a plurality of connectors configured to connect the first substrate with the second substrate. Each connector of the plurality of connecters can be located between a trace of the first conductive traces and a corresponding trace of the second conductive traces.

Abstract: Disclosed herein are magnetic structures in integrated circuit (IC) package supports, as well as related methods and devices. For example, in some embodiments, an IC package support may include a conductive line and a magnetic structure around a top surface of the conductive line and side surfaces of the conductive line. The magnetic structure may have a tapered shape that narrows toward the conductive line.

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a core substrate with a first conductive structure having a first thickness on the core substrate, and a second conductive structure having a second thickness on the core substrate, where the first thickness is different than the second thickness.

Abstract: An optoelectronic apparatus is presented. In embodiments, the apparatus may include a package including a substrate with a first side and a second side opposite the first side, wherein the first side comprises a ball grid array (BGA) field. The apparatus may further include one or more integrated circuits (ICs) disposed on the first side of the substrate, inside the BGA field, that thermally interface with a printed circuit board (PCB), to which the package is to be coupled, one or more optical ICs coupled to the second side and communicatively coupled with the one or more ICs via interconnects provided in the substrate, wherein at least one of the optical ICs is at least partially covered by an integrated heat spreader (IHS), to provide dissipation of heat produced by the at least one optical IC.

Abstract: Various embodiments of the disclosure are directed to a semiconductor package and a method for fabrication of the semiconductor package. Further, disclosed herein are systems and methods that are directed to using a photoimageable dielectric (PID) layer with substantially similar mechanical properties as that of a mold material. The disclosure can be used, for example, in the context of bumpless laserless embedded substrate structures (BLESS) technology for wafer/panel level redistribution layer (RDL) and/or fan-out packaging applications. The disclosed embodiments may reduce the need for multiple dry resist film (DFR) lamination steps during various processing steps for semiconductor packaging and can also facilitate multiple layer counts due to the availability of thin PID materials.

Abstract: Embodiments include semiconductor packages and a method of forming the semiconductor packages. A semiconductor package includes a trace disposed on a conductive layer. The semiconductor package has one or more adhesion anchoring points and a plurality of portions on the trace. An adhesion anchoring point is between two portions on the trace. A surface roughness of an adhesion anchoring point is greater than a surface roughness of a portion on the trace. The trace may be a high-speed input/output (HSIO) trace. The semiconductor package may include via pads disposed on each end of the trace, and a dielectric disposed on the trace. The dielectric is patterned to form openings on the dielectric that expose second portions on the trace. The dielectric remains over the portions. The semiconductor package may have a chemical treatment disposed on the exposed openings on the trace to form the adhesion anchoring points.

Abstract: Techniques for fabricating a cored or coreless semiconductor package having one or more magnetic bilayer structures embedded therein are described. A magnetic bilayer structure includes a magnetic layer and a dielectric layer. For one technique, fabricating a cored or coreless semiconductor package includes: depositing a seed layer on a build-up layer; forming a raised pad structure and a trace on the seed layer; removing one or more uncovered portions of the seed layer to uncover top surfaces of one or more portions of the build-up layer; applying a magnetic bilayer structure on the raised pad structure, the trace, any unremoved portion of the seed layer, and the top surfaces of the one or more portions of the build-up layer, the magnetic bilayer structure comprises a magnetic layer and a dielectric layer; and forming a conductive structure on the raised pad structure. Other techniques are also described.

Abstract: The systems and methods described herein provide for the fabrication of semiconductor package substrates having magnetic inductors formed in at least a portion of the through-holes formed in the semiconductor package substrate. Such magnetic inductors are formed without exposing the magnetic material disposed in the through-hole to any wet chemistry (desmear, electro-less plating, etc.) processes by sealing the magnetic material with a patterned sealant (e.g., patterned dry film resist) which seals the magnetic material prior to performing steps involving wet chemistry on the semiconductor package substrate. Such beneficially minimizes or even eliminates the contamination of wet chemistry reagents by the magnetic material should the magnetic material remain exposed during the wet chemistry processes. The patterned sealant is removed subsequent to the semiconductor package processing steps involving wet chemistry.

Abstract: Embodiments include inductors with embedded magnetic cores and methods of forming such inductors. Some embodiments may include an integrated circuit package that utilizes such inductors. For example, the integrated circuit package may include an integrated circuit die and a multi-phase voltage regulator electrically coupled to the integrated circuit die. In an embodiment, the multi-phase voltage regulator includes a substrate core and a plurality of inductors in the substrate core. In an embodiment, the inductors may include a conductive loop in and around the substrate core. In an embodiment, the conductive loops are electrically coupled to a voltage out line. Embodiments may also include a magnetic core surrounded by the conductive loops.

Abstract: Embodiments may include inductors with embedded magnetic cores and methods of making such inductors. In an embodiment, an integrated circuit package may include an integrated circuit die with a multi-phase voltage regulator electrically coupled to the integrated circuit die. In such embodiments, the multi-phase voltage regulator may include a substrate core and a plurality of inductors. The inductors may include a conductive through-hole disposed through the substrate core and a plugging layer comprising a dielectric material surrounding the conductive through-hole. In an embodiment, a magnetic sheath is formed around the plugging layer. In an embodiment, the magnetic sheath is separated from the plated through hole by the plugging layer. Additionally, a first layer comprising a dielectric material may be disposed over a first surface of the magnetic sheath, and a second layer comprising a dielectric material may be disposed over a second surface of the magnetic sheath.

Abstract: Apparatuses, systems and methods associated with substrate design with a magnetic feature for fully integrated voltage regulator are disclosed herein. In embodiments, a substrate assembly may include a base substrate and one or more interconnect elements located at a first side of the base substrate, the one or more interconnect elements to be coupled to a semiconductor chip having an integrated voltage regulator (IVR). The substrate assembly may further include a magnetic feature located at a second side of the base substrate, the second side being opposite to the first side, wherein the magnetic feature extends along a portion of the second side of the base substrate that is opposite to where the IVR is to be located when the semiconductor chip is coupled to the one or more interconnect elements. Other embodiments may be described and/or claimed.

Abstract: A microelectronic substrate may be formed to have an embedded trace which includes an integral attachment structure that extends beyond a first surface of a dielectric layer of the microelectronic substrate for the attachment of a microelectronic device. In one embodiment, the embedded trace may be fabricated by forming a dummy layer, forming a recess in the dummy layer, conformally depositing surface finish in the recess, forming an embedded trace layer on the dummy layer and abutting the surface finish, and removing the dummy layer.

Abstract: Apparatuses, systems and methods associated with substrate design with a magnetic feature for fully integrated voltage regulator are disclosed herein. In embodiments, a substrate assembly may include a base substrate and one or more interconnect elements located at a first side of the base substrate, the one or more interconnect elements to be coupled to a semiconductor chip having an integrated voltage regulator (IVR). The substrate assembly may further include a magnetic feature located at a second side of the base substrate, the second side being opposite to the first side, wherein the magnetic feature extends along a portion of the second side of the base substrate that is opposite to where the IVR is to be located when the semiconductor chip is coupled to the one or more interconnect elements. Other embodiments may be described and/or claimed.

Abstract: Devices and methods including a though-hole inductor for an electronic package are shown herein. Examples of the through-hole inductor include a substrate including at least one substrate layer. Each substrate layer including a dielectric layer having a first surface and a second surface. An aperture included in the dielectric layer is located from the first surface to the second surface. The aperture includes an aperture wall from the first surface to the second surface. A conductive layer is deposited on the first surface, second surface, and the aperture wall. At least one coil is cut from the conductive layer and located on the aperture wall.

Abstract: Devices and methods including a though-hole inductor for an electronic package are shown herein. Examples of the through-hole inductor include a substrate including at least one substrate layer. Each substrate layer including a dielectric layer having a first surface and a second surface. An aperture included in the dielectric layer is located from the first surface to the second surface. The aperture includes an aperture wall from the first surface to the second surface. A conductive layer is deposited on the first surface, second surface, and the aperture wall. At least one coil is cut from the conductive layer and located on the aperture wall.

Abstract: A microelectronic substrate may be fabricated having a substrate core with at least one plated through hole extending therethrough, wherein the plated through hole includes a fluorescent conductive fill material which can be utilized to detect defects during the fabrication process. In one embodiment, the microelectronic substrate may be fabricated by forming a substrate core, forming a hole to extend from a first surface to an opposing second surface of the substrate core, forming a conductive material layer on a sidewall(s) of the substrate core hole, disposing a fluorescent conductive fill material to abut the conductive material layer and fill the remaining substrate core hole, illuminating an exposed portion of the fluorescent conductive fill material, and detecting anomalies in the light fluoresced by the exposed portion of the fluorescent conductive fill material.