Patents by Inventor Yiming Huai

Yiming Huai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120146167
    Abstract: A spin-torque transfer magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL, the second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.
    Type: Application
    Filed: October 19, 2011
    Publication date: June 14, 2012
    Applicant: Avalanche Technology
    Inventors: Yiming Huai, Yuchen Zhou, Jing Zhang, Roger Klas Malmhall, Ioan Tudosa, Rajiv Yadav Ranjan
  • Publication number: 20120087185
    Abstract: A spin-transfer torque magnetic random access memory (STTMRAM) element is configured to store a state when electrical current is applied thereto. The STTMRAM element includes first and second free layers, each of which having an associated direction of magnetization defining the state of the STTMRAM element. Prior to the application of electrical current to the STTMRAM element, the direction of the magnetization of the first and second free layers each is in-plane and after the application of electrical current to the STTMRAM element, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.
    Type: Application
    Filed: February 25, 2011
    Publication date: April 12, 2012
    Applicant: AVALANCHE TECHNOLOGY, INC.
    Inventors: Yuchen Zhou, Yiming Huai, Rajiv Yadav Ranjan, Roger Klas Malmhall
  • Publication number: 20120063218
    Abstract: A spin-torque transfer memory random access memory (STTMRAM) element includes a composite fixed layer formed on top of a substrate and a tunnel layer formed upon the fixed layer and a composite free layer formed upon the tunnel barrier layer, the magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate. The composite layers are made of multiple repeats of a bi-layer unit which consists of a non-magnetic insulating layer and magnetic layer with thicknesses adjusted in a range that makes the magnetization have a preferred direction perpendicular to film plane.
    Type: Application
    Filed: September 2, 2011
    Publication date: March 15, 2012
    Applicant: Avalanche Technology, Inc.
    Inventors: Yiming Huai, Jing Zhang, Rajiv Yadav Ranjan, Yuchen Zhou, Roger Klas Malmhall, Ioan Tudosa
  • Publication number: 20120018823
    Abstract: A spin transfer torque memory random access memory (STTMRAM) element is capable of switching states when electrical current is applied thereto for storing data and includes the following layers. An anti-ferromagnetic layer, a fixed layer formed on top of the anti-ferromagnetic layer, a barrier layer formed on top of the second magnetic layer of the fixed layer, and a free layer including a first magnetic layer formed on top of the barrier layer, a second magnetic layer formed on top of the first magnetic layer, a non-magnetic insulating layer formed on top of the second magnetic layer and a third magnetic layer formed on top of the non-magnetic insulating layer. A capping layer is formed on top of the non-magnetic insulating layer.
    Type: Application
    Filed: May 2, 2011
    Publication date: January 26, 2012
    Applicant: AVALANCHE TECHNOLOGY, INC.
    Inventors: Yiming Huai, Rajiv Yadav Ranjan, Ioan Tudosa, Roger Klas Malmhall, Yuchen Zhou
  • Publication number: 20110241141
    Abstract: A magnetic device including a magnetic element is described. The magnetic element includes a fixed layer having a fixed layer magnetization, a spacer layer that is nonmagnetic, and a free layer having a free layer magnetization. The free layer is changeable due to spin transfer when a write current above a threshold is passed through the first free layer. The free layer is includes low saturation magnetization materials.
    Type: Application
    Filed: June 14, 2011
    Publication date: October 6, 2011
    Applicants: RENESAS TECHNOLOGY CORPORATION, GRANDIS INC.
    Inventors: Hide Nagai, Zhitao Diao, Yiming Huai
  • Patent number: 7982275
    Abstract: A magnetic device including a magnetic element is described. The magnetic element includes a fixed layer having a fixed layer magnetization, a spacer layer that is nonmagnetic, and a free layer having a free layer magnetization. The free layer is changeable due to spin transfer when a write current above a threshold is passed through the first free layer. The free layer is includes low saturation magnetization materials.
    Type: Grant
    Filed: August 22, 2007
    Date of Patent: July 19, 2011
    Assignees: Grandis Inc., Renesas Technology Corporation
    Inventors: Hide Nagai, Zhitao Diao, Yiming Huai
  • Patent number: 7973349
    Abstract: Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers. Each free ferromagnetic layer can include two or more layers and may be a multilayered free ferromagnetic stack that includes first and second ferromagnetic layers and a non-magnetic spacer between the first and second ferromagnetic layers.
    Type: Grant
    Filed: August 1, 2006
    Date of Patent: July 5, 2011
    Assignee: Grandis Inc.
    Inventors: Yiming Huai, Zhitao Diao, Eugene Youjun Chen
  • Publication number: 20110140217
    Abstract: A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer includes a first ferromagnetic layer and a second ferromagnetic layer. The second ferromagnetic layer has a very high perpendicular anisotropy and an out-of-plane demagnetization energy. The very high perpendicular anisotropy energy is greater than the out-of-plane demagnetization energy of the second layer.
    Type: Application
    Filed: November 3, 2010
    Publication date: June 16, 2011
    Applicant: GRANDIS, INC.
    Inventors: Paul P. Nguyen, Yiming Huai, Eugene Chen
  • Patent number: 7916433
    Abstract: A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, a barrier layer, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer. The barrier layer resides between the pinned layer and the free layer and includes MgO. The first ferromagnetic layer resides between the barrier layer and the intermediate layer. The first ferromagnetic layer includes at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent. The first ferromagnetic layer is ferromagnetically coupled with the second ferromagnetic layer.
    Type: Grant
    Filed: June 15, 2010
    Date of Patent: March 29, 2011
    Assignee: Grandis, Inc.
    Inventors: Yiming Huai, Zhitao Diao, Eugene Youjun Chen
  • Patent number: 7888755
    Abstract: A storage element 3 has an arrangement in which magnetization fixed layers 31 and 32 are provided above and below a storage layer 17 for storing information based on the magnetization state of a magnetic material through intermediate layers 16 and 18, directions of magnetizations M15 and M19 of ferromagnetic layers 15 and 19 closest to the storage layer 17 of the magnetization fixed layers 31 and 32 above and below the storage layer 17 are opposite to each other, the two intermediate layers 16 and 18 above and below the storage layer 17 have a significant difference between sheet resistivity values thereof and in which the direction of a magnetization M1 of the storage layer 17 is changed with application of an electric current to the lamination layer direction to record information on the storage layer 17.
    Type: Grant
    Filed: September 26, 2005
    Date of Patent: February 15, 2011
    Assignee: Sony Corporation
    Inventors: Masanori Hosomi, Kazuhiro Ohba, Hiroshi Kano, Yiming Huai, Zhitao Diao, Mahendra Pakala
  • Publication number: 20110012215
    Abstract: A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer includes a first ferromagnetic layer and a second ferromagnetic layer. The second ferromagnetic layer has a very high perpendicular anisotropy and an out-of-plane demagnetization energy. The very high perpendicular anisotropy energy is greater than the out-of-plane demagnetization energy of the second layer.
    Type: Application
    Filed: September 29, 2010
    Publication date: January 20, 2011
    Applicant: Grandis, Inc.
    Inventors: Paul P. Nguyen, Yiming Huai
  • Patent number: 7859034
    Abstract: Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers to switch the magnetization of the free ferromagnetic layer.
    Type: Grant
    Filed: April 16, 2009
    Date of Patent: December 28, 2010
    Assignee: Grandis Inc.
    Inventors: Yiming Huai, Zhitao Diao, Eugene Youjun Chen
  • Patent number: 7851840
    Abstract: Devices having magnetic or magnetoresistive tunnel junctions (MTJS) have a multilayer insulator barrier layer to produce balanced write switching currents in the device circuitry, or to produce the magnetic devices with balanced critical spin currents required for spin torque transfer induced switching of the magnetization, or both for the MTJs under both the forward and reversed bias directions.
    Type: Grant
    Filed: September 13, 2006
    Date of Patent: December 14, 2010
    Assignee: Grandis Inc.
    Inventors: Zhitao Diao, Yiming Huai
  • Patent number: 7821088
    Abstract: A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer includes a first ferromagnetic layer and a second ferromagnetic layer. The second ferromagnetic layer has a very high perpendicular anisotropy and an out-of-plane demagnetization energy. The very high perpendicular anisotropy energy is greater than the out-of-plane demagnetization energy of the second layer.
    Type: Grant
    Filed: June 5, 2008
    Date of Patent: October 26, 2010
    Assignee: Grandis, Inc.
    Inventors: Paul P. Nguyen, Yiming Huai
  • Patent number: 7821087
    Abstract: A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).
    Type: Grant
    Filed: March 13, 2007
    Date of Patent: October 26, 2010
    Assignee: Grandis, Inc.
    Inventors: Paul Nguyen, Yiming Huai, Zhitao Diao, Frank Albert
  • Publication number: 20100264501
    Abstract: Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode.
    Type: Application
    Filed: February 25, 2008
    Publication date: October 21, 2010
    Inventors: Haruo Furuta, Shuichi Ueno, Ryoji Matsuda, Tatsuta Fukumura, Takeharu Kuroiwa, Lien-Chang Wang, Eugene Chen, Yiming Huai
  • Publication number: 20100247967
    Abstract: A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, a barrier layer, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer. The barrier layer resides between the pinned layer and the free layer and includes MgO. The first ferromagnetic layer resides between the barrier layer and the intermediate layer. The first ferromagnetic layer includes at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent. The first ferromagnetic layer is ferromagnetically coupled with the second ferromagnetic layer.
    Type: Application
    Filed: June 15, 2010
    Publication date: September 30, 2010
    Applicant: GRANDIS, INC.
    Inventors: Yiming Huai, Zhitao Diao, Eugene Youjun Chen
  • Patent number: 7791931
    Abstract: A method and system for providing and using a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element is programmed by write currents driven through the magnetic element in a first or second direction. In one aspect, the method and system include providing a voltage supply and a voltage pump coupled with the magnetic storage cells and the voltage supply. The voltage supply provides a supply voltage. The voltage pump provides to the selection device a bias voltage having a magnitude greater than the supply voltage. Another aspect includes providing a silicon on oxide transistor as the selection device. Another aspect includes providing to the body of the transistor a body bias voltage that is a first voltage when the transistor is off and a second voltage when the transistor is on.
    Type: Grant
    Filed: March 28, 2009
    Date of Patent: September 7, 2010
    Assignee: Grandis, Inc.
    Inventors: Eugene Youjun Chen, Yiming Huai
  • Patent number: 7777261
    Abstract: Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers.
    Type: Grant
    Filed: September 20, 2005
    Date of Patent: August 17, 2010
    Assignee: Grandis Inc.
    Inventors: Yiming Huai, Zhitao Diao, Eugene Youjun Chen
  • Patent number: 7760474
    Abstract: A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, a barrier layer, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer. The barrier layer resides between the pinned layer and the free layer and includes MgO. The first ferromagnetic layer resides between the barrier layer and the intermediate layer. The first ferromagnetic layer includes at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent. The first ferromagnetic layer is ferromagnetically coupled with the second ferromagnetic layer.
    Type: Grant
    Filed: July 14, 2006
    Date of Patent: July 20, 2010
    Assignee: Grandis, Inc.
    Inventors: Yiming Huai, Zhitao Diao, Eugene Youjun Chen