Abstract: Provided are a data processing method and device, and a storage medium. The method includes: receiving configuration information of a blockchain from a second network element; and putting collected on-chaining information on the blockchain according to the configuration information of the blockchain.

Abstract: A wireless communication method for use in a wireless network node is disclosed. The method includes transmitting, to a measurement collection entity, minimization drive test (MDT) reports and quality of experience (QoE) reports. A QoE reporting is suspended in response to an overload situation. A transmission to a second wireless network node includes a suspension indication associated with a suspension of the QoE reporting.

Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a sacrificial gate structure over an active region. A first spacer layer is formed along sidewalls and a top surface of the sacrificial gate structure. A first protection layer is formed over the first spacer layer. A second spacer layer is formed over the first protection layer. A third spacer layer is formed over the second spacer layer. The sacrificial gate structure is replaced with a replacement gate structure. The second spacer layer is removed to form an air gap between the first protection layer and the third spacer layer.

Abstract: A method for simulating a particle transport may include recording transport paths of inputted particles and determining an uncertainty of each of lattice cells based on the transport paths of each batch of the inputted particles, a lattice cell being a qualified lattice cell if an uncertainty of the lattice cell does not exceed a first threshold; determining a standard-reaching rate of lattice cells in a region of interest (ROI), the ROI including at least one lattice cell, the standard-reaching rate of lattice cells in the ROI being equal to a ratio of the number of qualified lattice cells to a total number of lattice cells in the ROI; and if the standard-reaching rate of lattice cells in the ROI exceeds a second threshold, stopping inputting particles, and outputting the transport paths of the inputted particles.

Abstract: A method of assembling a waterproof structure includes the following operations. Connect a first input/output connector of a circuit board to a first positioning fixture. A first elastic adhesive is combined with a first rigid board. An end of the first positioning fixture away from the first input/output connector is passed out of the first rigid board, and the first input/output connector and the first elastic adhesive are separated on two sides of the first rigid board. The circuit board is arranged in the casing, wherein the first positioning fixture is inserted from the first input/output opening on the first wall inside the casing, so that the first elastic adhesive adheres the first rigid board to the first wall of the casing, and the first elastic adhesive fills a spacing between the first positioning fixture and the first input/output opening.

Abstract: A method, system, and computer program product for dynamic cue generation for language learning are provided. The method identifies one or more listener actions for a listener engaged in listening learning. Based on the one or more listener actions, a language level of the listener is determined. A set of prompt metrics are generated based on the language level and the one or more listener actions. A set of audio stream levels is generated based on the set of prompt metrics. The method selects an audio stream level for a listening prompt, where the audio stream level is selected from the set of audio stream levels based on the language level of the listener.

Abstract: In an embodiment, a device includes: a gate structure on a channel region of a substrate; a gate mask on the gate structure, the gate mask including a first dielectric material and an impurity, a concentration of the impurity in the gate mask decreasing in a direction extending from an upper region of the gate mask to a lower region of the gate mask; a gate spacer on sidewalls of the gate mask and the gate structure, the gate spacer including the first dielectric material and the impurity, a concentration of the impurity in the gate spacer decreasing in a direction extending from an upper region of the gate spacer to a lower region of the gate spacer; and a source/drain region adjoining the gate spacer and the channel region.

Abstract: A semiconductor device includes a first dielectric layer disposed over a substrate and a conductive feature, a doped dielectric layer disposed over the first dielectric layer, a first metal portion disposed in the first dielectric layer and in contact with the conductive feature, and a doped metal portion disposed over the first metal portion. The first metal portion and the doped metal portion include a same noble metal material. The doped dielectric layer and the doped metal portion include same dopants. The dopants are bonded to the noble metal material.

Abstract: Soluble water scavenger molecules for use with dielectric fluids are disclosed. An example dielectric fluid-based composition for reducing water content in a dielectric fluid may include a water-scavenging agent disposed within a dielectric fluid. The example dielectric fluid-based composition may further include the water-scavenging agent being soluble in the dielectric fluid. The example dielectric fluid-based composition may further include the water-scavenging agent being configured to react with water molecules in the dielectric fluid. The example dielectric fluid-based composition may be disposed in an electrical equipment immersed in oil. The electrical equipment may further include at least one solid insulation in operational contact with the dielectric fluid.

Abstract: In accordance with some embodiments, a source/drain contact is formed by exposing a source/drain region through a first dielectric layer and a second dielectric layer. The second dielectric layer is recessed under the first dielectric layer, and a silicide region is formed on the source/drain region, wherein the silicide region has an expanded width.

Abstract: A method for fabricating a physically unclonable function (PUF) device includes the steps of first defining a PUF cell region on a substrate and then performing a process to form a defect on the PUF cell region. Preferably, the formation of the defect could be accomplished by forming a shallow trench isolation (STI) on the substrate, forming a gate material layer on the substrate and the STI, patterning the gate material layer to form a first gate material layer and a second gate material layer, and then forming an epitaxial layer between and connecting the first gate material layer and the second gate material layer.

Abstract: A voltage regulation integrated circuit (IC) includes a first transistor, a feedback circuit, a bias circuit, an amplifier circuit, and a transient coupling circuit. The first transistor is configured to generate an output voltage according to an input voltage and a control voltage. The feedback circuit is configured to generate a feedback voltage according to the output voltage. The output voltage includes an AC component. The bias circuit is configured to generate a first bias voltage. The amplifier circuit is configured to generate the control voltage according to the first bias voltage and the feedback voltage. The transient coupling circuit is configured to generate a coupling voltage according to the AC component and to assist the change of the first bias voltage according to the coupling voltage, so that the output voltage is maintained at a voltage level.

Abstract: A method includes forming a first dielectric layer over a source/drain region, and forming a source/drain contact plug over and electrically connecting to the source/drain region. A top portion of the source/drain contact plug has a first lateral dimension. An implantation process is performed to implant a dopant into the first dielectric layer. The implantation process results in the source/drain contact plug to have a second lateral dimension smaller than the first lateral dimension. The method further includes forming a second dielectric layer over the etch stop layer, and forming a gate contact plug adjacent to the source/drain contact plug.

Abstract: An automatic food feeder for aquatic breeding comprises a bottom plate; the lower side of the bottom plate is provided with a driving mechanism, and the driving mechanism comprises four groups of rotating shafts located on the lower side of the bottom plate; gears are sleeved on the outer sides of the two groups of rotating shafts, and a conveyor belt is connected between the two groups of gears; a plurality of groups of meshing teeth matched with the gears are uniformly provided on the inner side of the conveyor belt, and a plurality of groups of electric telescopic push blocks are uniformly arranged on the outer side of the conveyor belt; a placing rack is connected on the upper side of the bottom plate, and a control box is connected on the front part of the lower side of the placing rack.

Abstract: An electronic device is provided. The electronic device includes a substrate, an optical sensing element, a light-shielding structure, and a microlens. The substrate has a normal direction. The optical sensing element is disposed on the substrate. The light-shielding structure is disposed on the optical sensing element and includes a plurality of light-shielding layers. Each light-shielding layer includes an opening, and centers of the openings are arranged along a first direction and separated from each other. The microlens is disposed on the light-shielding layers and overlaps the opening of the uppermost light-shielding layer. The microlens guides light into an optical channel formed by the openings, so that the optical sensing element has a maximum response value for light with an incident angle that is greater than or equal to 10 degrees and less than or equal to 30 degrees relative to the normal direction.

Abstract: A semiconductor structure includes a substrate having a memory device region and a logic device region, a first dielectric layer on the substrate, a plurality of memory stack structures on the first dielectric layer on the memory device region, an insulating layer conformally covering the memory stack structures and the first dielectric layer, a second dielectric layer on the insulating layer and completely filling the spaces between the memory stack structures, and a first interconnecting structure formed in the second dielectric layer on the logic device region. A top surface of the first interconnecting structure is flush with a top surface of the second dielectric layer and higher than top surfaces of the memory stack structures.

Abstract: In some embodiments, the present disclosure relates to a method that includes aligned a first wafer with a second wafer. The second wafer is spaced apart from the first wafer. The first wafer is arranged on a first electrostatic chuck (ESC). The first ESC has electrostatic contacts that are configured to attract the first wafer to the first ESC. Further, the second wafer is brought toward the first wafer to directly contact the first wafer at an inter-wafer interface. The inter-wafer interface is localized to a center of the first wafer. The second wafer is deformed to gradually expand the inter-wafer interface from the center of the first wafer toward an edge of the first wafer. The electrostatic contacts of the first ESC are turned OFF such that the first and second wafers are bonded to one another by the inter-wafer interface.

Abstract: The present application provides a network optimization method, including: sending a session setup request message to a client device to request the client device to perform measurement configuration on a designated network side device and perform measurement configuration on a terminal device connected to the designated network side device; receiving a measurement report message of the designated network side device and a measurement report message of the terminal device; determining, according to pre-acquired machine learning description information, whether to perform collaborative training with the client device; and performing designated model training processing for network optimization based on whether to perform collaborative training with the client device and measurement data in the received measurement report messages, and sending a model training processing result to the client device to instruct the client device to obtain a network optimization action according to the model training processing r

Abstract: A neutron capture therapy apparatus includes a neutron beam irradiation system, a detection system and a monitoring system. The neutron beam irradiation system is configured for generating a neutron beam. The detection system is configured for detecting real-time irradiation parameters during a neutron beam irradiation therapy process. The monitoring system is configured for controlling the whole neutron beam irradiation process and includes an input part for inputting preset irradiation parameters, a determination part for determining whether the irradiation parameters need to be corrected and a correction part for correcting some of the irradiation parameters when the determination part determines that the irradiation parameters need to be corrected. When the ratio of the real-time neutron dose detected by the detection system to a preset neutron dose is greater than or equal to a preset value, the determination part of the monitoring system determines that the irradiation parameters need to be corrected.

Abstract: Provided are a data transmission method and apparatus and a computer storage medium. The method may include: a source Distributed Unit (DU) reports a packet data convergence protocol (PDCP) transmission state report to a source Centralized Unit (CU), where the PDCP transmission state report enables the CU to determine which PDCP protocol data unit (PDU) data is not successfully received by a UE; and the PDCP PDU data which is not successfully received by the UE are retransmitted to the UE via a target DU.