Abstract: An aluminum borate whisker reinforced and toughened non-metallic matrix composite is provided, which specifically includes a non-metallic material reinforced and toughened with aluminum borate whiskers. The composite exhibits a higher bending strength and fracture toughness and a higher wear resistance. A method for preparing the composite is also provided. The method includes mixing the aluminum borate whiskers and the non-metallic material to form a mixture; and sintering the mixture by a vacuum hot press method, or molding the mixture.

Abstract: A method and apparatus for forwarding data in wireless communication systems with multi-connectivity is disclosed. In one embodiment, a method for performing a data forwarding by a first wireless communication node, includes: receiving a first message from a first middle wireless communication node, wherein the first message comprises a first node identity of a second wireless communication node; determining a first connection for at least one first corresponding bearer between the first wireless communication node and the second wireless communication node according to the first node identity; transmitting a second message to the first middle wireless communication node, wherein the second message comprises at least one first data forwarding address of the first wireless communication node for the at least one first corresponding bearer; and receiving a third message from the second wireless communication node.

Abstract: Updating a user social network profile of a user based on relevant activities posted by other users in a same social network.

Abstract: A device includes two BSI image sensor elements and a third element. The third element is bonded in between the two BSI image sensor elements using element level stacking methods. Each of the BSI image sensor elements includes a substrate and a metal stack disposed over a first side of the substrate. The substrate of the BSI image sensor element includes a photodiode region for accumulating an image charge in response to radiation incident upon a second side of the substrate. The third element also includes a substrate and a metal stack disposed over a first side of the substrate. The metal stacks of the two BSI image sensor elements and the third element are electrically coupled.

Abstract: A film comprises an elastomeric or soft polymer substrate that is capable of converting light to heat a second layer comprising a hydrophilic polymer and nanosheets of layered inorganic material dispersed in the hydrophilic polymer. The substrate can comprise a photothermal particle. The film can be used in a method by irradiating the film to cause wrinkles and optionally further exposing the film to moisture with optional drying.

Abstract: The present invention discloses a SAADC circuit having optimized linearity. A lower-bit capacitor array includes lower-bit capacitors. A higher-bit capacitor array includes unit capacitors. In an initializing mode, a control circuit sorts the unit capacitors according to unit capacitances thereof such that the unit capacitors are configured to be higher-bit capacitors having a linearity parameter within a predetermined range. In an operation mode, the capacitor array receives an analog input signal and a reference voltage to generate an analog output signal, a comparator generates a comparison result according to the analog output signal and the control circuit generates an enabling signal according to the comparison result based on the successive approximation mechanism to selectively enable the higher-bit and the lower-bit capacitors to connect to the reference voltage by using the capacitor enabling circuit and outputs a digital output signal according to the final comparison result.

Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes bonding structure arranged directly between a first substrate and a second substrate. The first substrate includes a first transparent material and a first alignment mark. The first alignment mark is arranged on an outer region of the first substrate and also includes the first transparent material. The first alignment mark is defined by surfaces of the first substrate that are arranged between an uppermost surface of the first substrate and a lowermost surface of the first substrate. The second substrate includes a second alignment mark on an outer region of the second substrate. The second alignment mark directly underlies the first alignment mark, and the bonding structure is arranged directly between the first alignment mark and the second alignment mark.

Abstract: Disclosed is a methods and apparatus which can improve defect tolerability of a hardware-based neural network. In one embodiment, a method for performing a calculation of values on first neurons of a first layer in a neural network, includes: receiving a first pattern of a memory cell array; determining a second pattern of the memory cell array according to a third pattern; determining at least one pair of columns of the memory cell array according to the first pattern and the second pattern; switching input data of two columns of each of the at least one pair of columns of the memory cell array; and switching output data of the two columns in each of the at least one pair of columns of the memory cell array so as to determine the values on the first neurons of the first layer.

Abstract: The present disclosure provides a comprehensive utilization method and test equipment for surface water, a goaf and geothermal energy in a coal mining subsidence area. The method comprises the following steps: determining a geothermal water collection area, arranging heat energy exchange equipment in a main roadway, and arranging a geothermal water extraction system, wherein the geothermal water extraction system comprises geothermal wells, extraction pipelines and tail water reinjection pipelines, the extraction pipelines are connected with the heat energy exchange equipment, and the tail water reinjection pipelines are connected with a water outlet of the heat energy exchange equipment; arranging a water channel on the surface, and arranging a drainage system on a subsidence trough to guide surface water to flow underground; and controlling directional and ordered flow of surface water through the coal mining subsidence area formed by ground mining to achieve sustainable mining of underground water.

Abstract: The present disclosure relates to a processing tool that includes a first wafer-mounting frame and a second wafer-mounting frame. The first wafer-mounting frame is configured to retain a target wafer. The second wafer-mounting frame is configured to retain a masking wafer. The masking wafer includes a mask pattern made up of a number of openings passing through the masking wafer to correspond to a predetermined deposition pattern to be formed on the target wafer. A deposition chamber is configured to receive the first and second wafer-mounting frames, when the first and second wafer-mounting frames are clamped together to retain the target wafer and the masking wafer. The deposition chamber includes a material deposition source configured to deposit material from the material deposition source through the number of openings in the mask pattern to form the material in the predetermined deposition pattern on the target wafer.

Abstract: The present disclosure relates to a processing tool that includes a first wafer-mounting frame and a second wafer-mounting frame. The first wafer-mounting frame is configured to retain a target wafer. The second wafer-mounting frame is configured to retain a masking wafer. The masking wafer includes a mask pattern made up of a number of openings passing through the masking wafer to correspond to a predetermined deposition pattern to be formed on the target wafer. A deposition chamber is configured to receive the first and second wafer-mounting frames, when the first and second wafer-mounting frames are clamped together to retain the target wafer and the masking wafer. The deposition chamber includes a material deposition source configured to deposit material from the material deposition source through the number of openings in the mask pattern to form the material in the predetermined deposition pattern on the target wafer.

Abstract: Disclosed is a methods and apparatus which can improve defect tolerability of a hardware-based neural network. In one embodiment, a method for performing a calculation of values on first neurons of a first layer in a neural network, includes: receiving a first pattern of a memory cell array; determining a second pattern of the memory cell array according to a third pattern; determining at least one pair of columns of the memory cell array according to the first pattern and the second pattern; switching input data of two columns of each of the at least one pair of columns of the memory cell array; and switching output data of the two columns in each of the at least one pair of columns of the memory cell array so as to determine the values on the first neurons of the first layer.

Abstract: Hot surface igniter assemblies used in cooktops are shown and described. The hot surface igniters include a silicon nitride ceramic body with an embedded, resistive, heat-generating circuit. The igniters are less than 0.04 inches thick, and when energized, they reach surface temperatures in excess of 2000° F. in under 4 seconds to ignite combustible gas such as propane, butane, or natural gas. Examples of cook top burner systems are also provided which allow the igniter to remain on after ignition at a power level that is lower than during ignition but high enough to ignite the cooking gas should a flame out occur. Examples are also provided of burners that ignite on a low flow setting (e.g., simmer) as opposed the high flow settings that are common in cook top industry.

Abstract: A method of forming a flash memory cell includes the following steps. A first dielectric layer and a floating gate layer are deposited on a substrate sequentially. Three blocking structures having oblique sidewalls broaden from bottom to top penetrating through the first dielectric layer and the floating gate layer are formed. A first part and a second part of the floating gate layer between two adjacent blocking structures are etched respectively, so that a first floating gate having two sharp top corners and oblique sidewalls, and a second floating gate having two sharp top corners and oblique sidewalls, are formed. The three blocking structures are removed. A first isolating layer and a first selective gate covering the first floating gate are formed and a second isolating layer and a second selective gate covering the second floating gate are formed. A flash memory cell formed by said method is also provided.

Abstract: The present disclosure, in some embodiments, relates to a workpiece bonding apparatus. The workpieces bonding apparatus includes a first substrate holder having a first surface configured to receive a first workpiece, and a second substrate holder having a second surface configured to receive a second workpiece. A vacuum apparatus is positioned between the first substrate holder and the second substrate holder and is configured to selectively induce a vacuum between the first surface and the second surface. The vacuum is configured to attract the first surface and the second surface toward one another.

Abstract: A method for fabricating a physically unclonable function (PUF) device includes the steps of first defining a PUF cell region on a substrate and then performing a process to form a defect on the PUF cell region. Preferably, the formation of the defect could be accomplished by forming a shallow trench isolation (STI) on the substrate, forming a gate material layer on the substrate and the STI, patterning the gate material layer to form a first gate material layer and a second gate material layer, and then forming an epitaxial layer between and connecting the first gate material layer and the second gate material layer.

Abstract: A voltage regulation integrated circuit (IC) includes a first transistor, a feedback circuit, a bias circuit, an amplifier circuit, and a transient coupling circuit. The first transistor is configured to generate an output voltage according to an input voltage and a control voltage. The feedback circuit is configured to generate a feedback voltage according to the output voltage. The output voltage includes an AC component. The bias circuit is configured to generate a first bias voltage. The amplifier circuit is configured to generate the control voltage according to the first bias voltage and the feedback voltage. The transient coupling circuit is configured to generate a coupling voltage according to the AC component and to assist the change of the first bias voltage according to the coupling voltage, so that the output voltage is maintained at a voltage level.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes bonding structure arranged directly between a first substrate and a second substrate. The first substrate includes a first transparent material and a first alignment mark. The first alignment mark is arranged on an outer region of the first substrate and also includes the first transparent material. The first alignment mark is defined by surfaces of the first substrate that are arranged between an uppermost surface of the first substrate and a lowermost surface of the first substrate. The second substrate includes a second alignment mark on an outer region of the second substrate. The second alignment mark directly underlies the first alignment mark, and the bonding structure is arranged directly between the first alignment mark and the second alignment mark.

Abstract: A method of screening weak bits in a memory array includes dividing the memory array into a first and a second memory array, storing a first set of data in the first memory array, performing a first baking process on the first memory array or applying a first magnetic field to the first memory array, determining that a first portion of the first set of data stored in the first memory array is altered by the first baking process or the first magnetic field, and at least one of replacing memory cells of a first set of memory cells that are storing the first portion of the first set of data with corresponding memory cells in the second memory array of the memory array, or not using the memory cells of the first set of memory cells storing the first portion of the first set of data.