Abstract: In some embodiments, the present disclosure relates to a method that includes aligned a first wafer with a second wafer. The second wafer is spaced apart from the first wafer. The first wafer is arranged on a first electrostatic chuck (ESC). The first ESC has electrostatic contacts that are configured to attract the first wafer to the first ESC. Further, the second wafer is brought toward the first wafer to directly contact the first wafer at an inter-wafer interface. The inter-wafer interface is localized to a center of the first wafer. The second wafer is deformed to gradually expand the inter-wafer interface from the center of the first wafer toward an edge of the first wafer. The electrostatic contacts of the first ESC are turned OFF such that the first and second wafers are bonded to one another by the inter-wafer interface.

Abstract: The present invention discloses a programmable gain amplifier having mode-switching mechanism. An operational amplifier includes a first input terminal, a second input terminal and an output terminal. The second input terminal is coupled to a ground terminal. The output terminal generates an output signal. A variable resistor and a first switch are coupled in series between a first terminal and a second terminal that coupled to the first input terminal. A first variable capacitor and a second switch are coupled in series between the first terminal and the second terminal. A second variable capacitor and a third switch are coupled in series between the first terminal and the ground terminal. A low-pass resistor and a low-pass capacitor are coupled in parallel between the first input terminal and the output terminal. An input resistor is coupled between a signal input terminal and the first terminal to receive an input signal from the signal input terminal.

Abstract: An electronic package structure and a chip thereof are provided. The electronic package structure includes a supporting element, a chip, an internal bonding wire, and a plurality of external bonding wires. The supporting element has a chip arrangement portion. The chip has a first surface and a second surface opposite to the first surface. The chip is arranged on the chip arrangement portion with the second surface facing toward the supporting element. The chip includes a first common pad and an individual core pad that are disposed on the first surface. The internal bonding wire is connected between the first common pad and the individual core pad. The external bonding wires are connected between the chip and the supporting element, in which a first external bonding wire of the external bonding wires and the internal bonding wire are jointly connected to the first common pad.

Abstract: A method of operating an analog-to-digital converter includes in a first conversion period, a comparator generating a first comparison result, a first selection circuit switching a voltage output to a first capacitor of a set of larger capacitor of a first capacitor array, and a second selection circuit switching a voltage output to a second capacitor of a set of larger capacitor of a second capacitor array, and in a second conversion period after the first conversion period, the comparator generating a second comparison result different from the first comparison result, the first selection circuit switching back the voltage output to a first capacitor portion of the first capacitor of the set of larger capacitor of the first capacitor array, and the second selection circuit switching back the voltage output to a first capacitor portion of the second capacitor of the set of larger capacitor of the second capacitor array.

Abstract: An analog-to-digital converter includes a switch circuit, a first capacitor array, a second capacitor array and a comparator. A method of operating the analog-to-digital converter includes switching a swap signal to a first level in a first sampling period for the switch circuit to couple the first capacitor array to a first input terminal of the comparator and a first signal source, and couple the second capacitor array to a second input terminal of the comparator and a second signal source, and switching the swap signal to a second level in a second sampling period for the switch circuit to couple the first capacitor array to the second input terminal of the comparator and the second signal source, and couple the second capacitor array to the first input terminal of the comparator and the first signal source.

Abstract: An aluminum borate whisker reinforced and toughened non-metallic matrix composite is provided, which specifically includes a non-metallic material reinforced and toughened with aluminum borate whiskers. The composite exhibits a higher bending strength and fracture toughness and a higher wear resistance. A method for preparing the composite is also provided. The method includes mixing the aluminum borate whiskers and the non-metallic material to form a mixture; and sintering the mixture by a vacuum hot press method, or molding the mixture.

Abstract: A system level search module receives system level search user interface registration information for an application of the computing device. The registration information includes an indication of how the system level search module can launch the application. The registration information is added to a registration store, and the application is included as one of one or more applications that can be searched using the system level search user interface.

Abstract: A method of forming a flash memory cell includes the following steps. A first dielectric layer and a floating gate layer are deposited on a substrate sequentially. Three blocking structures having oblique sidewalls broaden from bottom to top penetrating through the first dielectric layer and the floating gate layer are formed. A first part and a second part of the floating gate layer between two adjacent blocking structures are etched respectively, so that a first floating gate having two sharp top corners and oblique sidewalls, and a second floating gate having two sharp top corners and oblique sidewalls, are formed. The three blocking structures are removed. A first isolating layer and a first selective gate covering the first floating gate are formed and a second isolating layer and a second selective gate covering the second floating gate are formed. A flash memory cell formed by said method is also provided.

Abstract: In some embodiments, the present disclosure relates to a method that includes aligned a first wafer with a second wafer. The second wafer is spaced apart from the first wafer. The first wafer is arranged on a first electrostatic chuck (ESC). The first ESC has electrostatic contacts that are configured to attract the first wafer to the first ESC. Further, the second wafer is brought toward the first wafer to directly contact the first wafer at an inter-wafer interface. The inter-wafer interface is localized to a center of the first wafer. The second wafer is deformed to gradually expand the inter-wafer interface from the center of the first wafer toward an edge of the first wafer. The electrostatic contacts of the first ESC are turned OFF such that the first and second wafers are bonded to one another by the inter-wafer interface.

Abstract: The present application discloses a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a substrate, a gate dielectric layer, a floating gate, a first dielectric layer and a control gate. The gate dielectric layer is disposed on the substrate. The floating gate is disposed on the gate dielectric layer and has at least one tip on a top surface of the floating gate. The first dielectric layer is disposed on the floating gate. The control gate is disposed above the first dielectric layer and at least partially overlaps the floating gate.

Abstract: The disclosure discloses a method for preparing a high-voltage cathode material by body modification and regeneration of a waste lithium cobaltate material.

Abstract: A system level search module receives system level search user interface registration information for an application of the computing device. The registration information includes an indication of how the system level search module can launch the application. The registration information is added to a registration store, and the application is included as one of one or more applications that can be searched using the system level search user interface.

Abstract: A method of the present disclosure includes forming a fin-shaped structure including a plurality of semiconductor layers, a first hard mask layer, a second hard mask layer, and a third hard mask layer, forming a patterned masking layer having a mask portion and a window portion, wherein the third hard mask layer is exposed through the window portion, performing a first etch process to expose the second hard mask layer through the window portion, performing a second etch process to etch the exposed second hard mask layer and to leave behind second hard mask layer residues, performing a third etch process to remove the second hard mask layer residues, etching the plurality of semiconductor layers in the fin-shaped structure through the window portion to divide the fin-shaped structure into a first segment and a second segment, and forming an isolation feature around the first segment and the second segment.

Abstract: Hot surface igniter assemblies used in cooktops are shown and described. The hot surface igniters include a silicon nitride ceramic body with an embedded, resistive, heat-generating circuit. The igniters are less than 0.04 inches thick, and when energized, they reach surface temperatures in excess of 2000° F. in under 4 seconds to ignite combustible gas such as propane, butane, or natural gas. Examples of cook top burner systems are also provided which allow the igniter to remain on after ignition at a power level that is lower than during ignition but high enough to ignite the cooking gas should a flame out occur. Examples are also provided of burners that ignite on a low flow setting (e.g., simmer) as opposed the high flow settings that are common in cook top industry.

Abstract: Disclosed is a voltage reference buffer circuit including a first, second, third, and fourth bias generators and a first, second, third, and fourth driving components. The first, second, third, and fourth bias generators generate bias voltages to control the first, second, third, and fourth driving components respectively. The first, second, third, and fourth driving components are coupled in sequence, wherein the first and second driving components are different types of transistors and jointly output a first reference voltage, the third and fourth driving components are different types of transistors and jointly output a second reference voltage, and the group of the first and second driving components is separated from the group of the third and fourth driving components by a resistance load.

Abstract: A method includes: retrieving a first word comprising a plurality of data bits and a plurality of parity bits that correspond to the first word, wherein the plurality of data bits form N?1 groups and the plurality of parity bits form a first group different from the N?1 groups, and N is a positive integer greater than 2; receiving a request to update respective data bits of a first one of the N?1 groups; and providing a second word comprising updated data bits that form a second one of the N?1 groups and a plurality of updated parity bits that correspond to the second word, wherein the plurality of updated parity bits form a second group that has a same group index as the first one of the N?1 groups.

Abstract: A method of forming a flash memory cell includes the following steps. A first dielectric layer and a floating gate layer are deposited on a substrate sequentially. Three blocking structures having oblique sidewalls broaden from bottom to top penetrating through the first dielectric layer and the floating gate layer are formed. A first part and a second part of the floating gate layer between two adjacent blocking structures are etched respectively, so that a first floating gate having two sharp top corners and oblique sidewalls, and a second floating gate having two sharp top corners and oblique sidewalls, are formed. The three blocking structures are removed. A first isolating layer and a first selective gate covering the first floating gate are formed and a second isolating layer and a second selective gate covering the second floating gate are formed. A flash memory cell formed by said method is also provided.

Abstract: A biofuel cell includes a cathode, an anode, and a microbial community. At least one of the anode and the cathode contains a biochar prepared from a Trapa natans husk as an electrode material, and the anode is located in the microbial community. By using the biochar prepared from the Trapa natans husk as the electrode material, not only can the power density of the biofuel cell be increased, but the economic benefits of waste recycling can also be achieved.

Abstract: The present disclosure provides a comprehensive utilization method and test equipment for surface water, a goaf and geothermal energy in a coal mining subsidence area. The method comprises the following steps: determining a geothermal water collection area, arranging heat energy exchange equipment in a main roadway, and arranging a geothermal water extraction system, wherein the geothermal water extraction system comprises geothermal wells, extraction pipelines and tail water reinjection pipelines, the extraction pipelines are connected with the heat energy exchange equipment, and the tail water reinjection pipelines are connected with a water outlet of the heat energy exchange equipment; arranging a water channel on the surface, and arranging a drainage system on a subsidence trough to guide surface water to flow underground; and controlling directional and ordered flow of surface water through the coal mining subsidence area formed by ground mining to achieve sustainable mining of underground water.

Abstract: Updating a user social network profile of a user based on relevant activities posted by other users in a same social network.