Abstract: An analog-to-digital converter includes a switch circuit, a first capacitor array, a second capacitor array and a comparator. A method of operating the analog-to-digital converter includes switching a swap signal to a first level in a first sampling period for the switch circuit to couple the first capacitor array to a first input terminal of the comparator and a first signal source, and couple the second capacitor array to a second input terminal of the comparator and a second signal source, and switching the swap signal to a second level in a second sampling period for the switch circuit to couple the first capacitor array to the second input terminal of the comparator and the second signal source, and couple the second capacitor array to the first input terminal of the comparator and the first signal source.

Abstract: A method of operating an analog-to-digital converter includes in a first conversion period, a comparator generating a first comparison result, a first selection circuit switching a voltage output to a first capacitor of a set of larger capacitor of a first capacitor array, and a second selection circuit switching a voltage output to a second capacitor of a set of larger capacitor of a second capacitor array, and in a second conversion period after the first conversion period, the comparator generating a second comparison result different from the first comparison result, the first selection circuit switching back the voltage output to a first capacitor portion of the first capacitor of the set of larger capacitor of the first capacitor array, and the second selection circuit switching back the voltage output to a first capacitor portion of the second capacitor of the set of larger capacitor of the second capacitor array.

Abstract: A roller treatment process and a treatment device suitable for a total-amount steel slag treatment. The treatment process is: firstly, a slag tank (2) with the molten slag is tightly held by a slag tank tilting mechanism and moved to a slag inlet position, the slag tank (2) is tilted to pour the molten slag with good fluidity into a rotary roller device (5) through a feeding chute (51), so that a roller treatment is achieved; secondly, when the steel slag (3) without fluidity in the slag tank (2) cannot flow out, a slag removal machine (4) is used for pushing the high-viscosity slag or the solid slag into the roller device (5); and thirdly, the slag tank (2) is reversed by a large angle tilting to make the slag at the bottom of the tank drop into the roller device (5), so that the total-amount steel slag treatment of the same roller device (5) is achieved.

Abstract: Disclosed is a methods and apparatus which can improve defect tolerability of a hardware-based neural network. In one embodiment, a method for performing a calculation of values on first neurons of a first layer in a neural network, includes: receiving a first pattern of a memory cell array; determining a second pattern of the memory cell array according to a third pattern; determining at least one pair of columns of the memory cell array according to the first pattern and the second pattern; switching input data of two columns of each of the at least one pair of columns of the memory cell array; and switching output data of the two columns in each of the at least one pair of columns of the memory cell array so as to determine the values on the first neurons of the first layer.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes bonding structure arranged directly between a first substrate and a second substrate. The first substrate includes a first transparent material and a first alignment mark. The first alignment mark is arranged on an outer region of the first substrate and also includes the first transparent material. The first alignment mark is defined by surfaces of the first substrate that are arranged between an uppermost surface of the first substrate and a lowermost surface of the first substrate. The second substrate includes a second alignment mark on an outer region of the second substrate. The second alignment mark directly underlies the first alignment mark, and the bonding structure is arranged directly between the first alignment mark and the second alignment mark.

Abstract: An embodiment low contamination chamber includes a gas inlet, an adjustable top electrode, and an adjustable bottom electrode. The low contamination chamber is configured to adjust a distance between the adjustable top electrode and the adjustable bottom electrode in response to a desired density of plasma and a measured density of plasma measured between the adjustable top electrode and the adjustable bottom electrode during a surface activation process. The low contamination chamber further includes an outlet.

Abstract: A medical image recognition method includes the following steps: establishing an image recognition model, wherein the image recognition model is generated by inputting a plurality of labeled medical image slices in a plurality of initial medical image piles into a neural network; and in response to determining that the accuracy of the image recognition model is not higher than an accuracy threshold; calculating a plurality of image change rates corresponding to each of a plurality of initial medical image slices or the initial medical image piles formed by the initial medical image slices according to the image recognition model; selecting at least one of the initial medical image piles or the initial medical image slices as a training medical image slice according to the image change rates; obtaining the target range of each training medical image slice to re-establish the image recognition model.

Abstract: A pipeline analog to digital converter (ADC) includes converter circuitries, a detector circuitry, and a clock generator circuit. The converter circuitries sequentially convert an input signal to be digital codes. One of the converter circuitries includes a sub-ADC circuit and a multiplying digital to analog converter (MDAC) circuit. The sub-ADC circuit performs a quantization according to a first signal to generate a corresponding one of the digital codes, in which the first signal is the input signal or a previous stage residue signal. The MDAC circuit processes the corresponding one of the digital codes in response to a first clock signal, in order to generate a current stage residue signal. The detector circuitry detects whether the quantization is complete, in order to generate a control signal. The clock generator circuit adjusts a timing of the first clock signal according to the control signal.

Abstract: Hot surface igniter assemblies used in cooktops are shown and described. The hot surface igniters include a silicon nitride ceramic body with an embedded, resistive, heat-generating circuit. The igniters are less than 0.04 inches thick, and when energized, they reach surface temperatures in excess of 2000° F. in under 4 seconds to ignite cooking gas such as propane, butane, or natural gas. Examples of cook top burner systems are also provided which allow the igniter to remain on after ignition at a power level that is lower than during ignition but high enough to ignite the cooking gas should a flame out occur. Examples are also provided of burners that ignite on a low flow setting (e.g., simmer) as opposed the high flow settings that are common in cook top industry.

Abstract: A method of operating an analog-to-digital converter includes in a first sampling stage, switching a swap signal to a first level for a first selection circuit to reset a first capacitor array according to a first voltage configuration and for a second selection circuit to reset a second capacitor array according to the first voltage configuration, and in a second sampling stage, switching the swap signal to a second level for the first selection circuit to reset the first capacitor array according to the second voltage configuration and for the second selection circuit to reset the second capacitor array according to the second voltage configuration. A control logic circuit is used to switch the swap signal between the first level and the second level in a uniform order in a plurality of sampling stages.

Abstract: Embodiments of the present disclosure provide methods and apparatuses for forwarding data among network nodes in maritime network. A method in a relay terminal device comprises: setting up a first radio connection with a first network node; setting up a second radio connection with a second network node; and notifying the first network node and the second network node that the relay terminal device has network node capability to relay data between the first network node and the second network node.

Abstract: A control circuit of a pipeline analog-to-digital converter (ADC) is provided. The pipeline ADC includes a multiplying digital-to-analog converter (MDAC) which includes a capacitor. The control circuit includes six switches and two buffer circuits. The first and second switches are respectively coupled between one end of the capacitor and the first and second reference voltages. The output terminals of the first and second buffer circuits are respectively coupled to the first and second switches. The input terminal of the first buffer circuit is coupled to the third reference voltage through the third switch, or receives a control signal through the fifth switch. The input terminal of the second buffer circuit is coupled to the fourth reference voltage through the fourth switch, or receives the control signal through the sixth switch. The first and second reference voltages are different, and the first and second switches are not turned on simultaneously.

Abstract: A method of operating an analog-to-digital converter includes in a first sampling stage, switching a swap signal to a first level for a first selection circuit to reset a first capacitor array according to a first voltage configuration and for a second selection circuit to reset a second capacitor array according to the first voltage configuration, and in a second sampling stage, switching the swap signal to a second level for the first selection circuit to reset the first capacitor array according to the second voltage configuration and for the second selection circuit to reset the second capacitor array according to the second voltage configuration. A control logic circuit is used to switch the swap signal between the first level and the second level in a uniform order in a plurality of sampling stages.

Abstract: Disclosed is a methods and apparatus which can improve defect tolerability of a hardware-based neural network. In one embodiment, a method for performing a calculation of values on first neurons of a first layer in a neural network, includes: receiving a first pattern of a memory cell array; determining a second pattern of the memory cell array according to a third pattern; determining at least one pair of columns of the memory cell array according to the first pattern and the second pattern; switching input data of two columns of each of the at least one pair of columns of the memory cell array; and switching output data of the two columns in each of the at least one pair of columns of the memory cell array so as to determine the values on the first neurons of the first layer.

Abstract: An integrated circuit structure includes a package component, which further includes a non-porous dielectric layer having a first porosity, and a porous dielectric layer over and contacting the non-porous dielectric layer, wherein the porous dielectric layer has a second porosity higher than the first porosity. A bond pad penetrates through the non-porous dielectric layer and the porous dielectric layer. A dielectric barrier layer is overlying, and in contact with, the porous dielectric layer. The bond pad is exposed through the dielectric barrier layer. The dielectric barrier layer has a planar top surface. The bond pad has a planar top surface higher than a bottom surface of the dielectric barrier layer.

Abstract: Updating a user social network profile of a user based on relevant activities posted by other users in a same social network.

Abstract: A method of forming a flash memory cell includes the following steps. A first dielectric layer and a floating gate layer are deposited on a substrate sequentially. Three blocking structures having oblique sidewalls broaden from bottom to top penetrating through the first dielectric layer and the floating gate layer are formed. A first part and a second part of the floating gate layer between two adjacent blocking structures are etched respectively, so that a first floating gate having two sharp top corners and oblique sidewalls, and a second floating gate having two sharp top corners and oblique sidewalls, are formed. The three blocking structures are removed. A first isolating layer and a first selective gate covering the first floating gate are formed and a second isolating layer and a second selective gate covering the second floating gate are formed. A flash memory cell formed by said method is also provided.

Abstract: A flash analog to digital converter includes double differential comparator circuits and a calibration circuit. Each double differential comparator circuit compares a first input signal with a corresponding voltage in a first set of reference voltages, and compares a second input signal with a corresponding voltage in a second set of reference voltages, in order to generate a corresponding signal in first signals. The calibration circuit outputs a first test signal to be the first input signal and outputs a second test signal to be the second input signal in a test mode, and calibrates a common mode level of each of the first input signal and the second input signal, or calibrates at least one first reference voltage in the first set of reference voltages and at least one second reference voltage in the second set of reference voltages according to a distribution of the first signals.

Abstract: A method of screening weak bits in a memory array includes dividing the memory array into a first and a second memory array, storing a first set of data in the first memory array, performing a first baking process on the first memory array or applying a first magnetic field to the first memory array, determining that a first portion of the first set of data stored in the first memory array is altered by the first baking process or the first magnetic field, and at least one of replacing memory cells of a first set of memory cells that are storing the first portion of the first set of data with corresponding memory cells in the second memory array of the memory array, or not using the memory cells of the first set of memory cells storing the first portion of the first set of data.