Abstract: An apparatus capable of measuring topography and transparent film thickness of a patterned metal-dielectric layer on a substrate without contact with the layer. A broadband interferometer measures an absolute phase of reflection at a plurality of wavelengths from a plurality of locations within a field of view on the metal-dielectric patterned layer on the substrate, and produces reflection phase data. An analyzer receives the reflection phase data and regresses the transparent film thickness and the topography at each of the plurality of locations from the reflection phase data. In this manner, the apparatus is not confused by the phase changes produced in the reflected light by the transparent layers, because the thickness of the transparent layers are determined by using the reflection phase data from multiple wavelengths. Further, the surface topography of the layer, whether it be opaque or transparent is also determinable.

Abstract: This invention is directed to a system and method of fabricating PN and PiN diodes by diffusing an acceptor impurity into a substrate. This invention is particularly advantageous for fabricating SiC diodes having linearly graded, deep pn junctions. One method that this invention uses to achieve its advantages is by diffusing an acceptor impurity into a substrate using a crucible, acceptor source, substrate, and furnace.

Abstract: A culture system for maintaining avian PGCs for long periods in tissue culture is provided. This culture system uses LIF, bFGF, IGF-I and SCF. The resultant PGCs are useful for the production of transgenic and chimeric avians, in particular, chickens or turkeys.

Abstract: This invention is directed to a system and method of fabricating PN and PiN diodes by diffusing an acceptor impurity into a substrate. This invention is particularly advantageous for fabricating SiC diodes having linearly graded, deep pn junctions. One method that this invention uses to achieve its advantages is by diffusing an acceptor impurity into a substrate using a crucible, acceptor source, substrate, and furnace.

Abstract: A testing system comprising an electron beam probe, a photon beam probe, and a device under test (DUT) card holder which is positioned between the electron beam probe and the photon beam probe. A first valve is positioned between the electron beam probe and the DUT. A second valve, located on an opposite side of the DUT from the first valve, is positioned between the photon beam probe and the DUT. The first and second valve operate in cooperation to control the pressure surrounding the DUT card. One embodiment of the invention includes a first test chamber and a second test chamber. The first test chamber includes the area between the first side of the DUT card and the first valve. The second test chamber includes the area between the second side of the DUT card and the second valve. The present invention includes a method for using the test system of the present invention to test both the top and bottom surfaces of a semiconductor device.

Abstract: A culture system for maintaining avian PGCs for long periods in tissue culture is provided. This culture system uses LIF, bFGF, IGF and SCF. The resultant PGCs are useful for the production of transgenic and chimeric avians, in particular, chickens or turkeys.