Abstract: The invention provides a new tumor tag, RL5 protein, the polynucleotide encoding RL5 protein, and the method of producing RL5 protein by recombinant technology. The invention also discloses the use of RL5 protein and the polynucleotides encoding RL5 protein, e.g., in diagnosing and treating tumor, as well as the pharmaceutical composition containing RL5 protein or the antibody against it.

Abstract: The invention provides a new kind of tumor marker RL9/RL10 protein, the polynucleotide encoding the polypeptide, and the method of producing RL9/RL10 protein by recombinant technology. The invention also discloses the use of RL9/RL10 protein and the polynucleotides encoding RL9/RL10 protein, e.g., in diagnosing and treating tumor, as well as the pharmaceutical composition containing RL9/RL10 protein or the antibody against it.

Abstract: A method is performed in a print identification system to segment a non-segmented slap print image into its finger components. The method includes: receiving, for a hand, a non-segmented slap print image and a corresponding plurality of roll print images each corresponding to a different finger number; comparing the roll print images to the non-segmented slap print image to determine a number of mated minutiae areas on the non-segmented slap print image; detecting a number of print components from the non-segmented slap print image using the plurality of mated minutiae areas; and selecting a number of final print components from the detected print components and assigning finger numbers to the final print components, using the plurality of mated minutiae areas.

Abstract: A semiconductor device has at least two tensile stressor layers that are cured with UV radiation. A second tensile stressor layer is formed after a first stressor layer. In some examples, the tensile stressor layers include silicon nitride and hydrogen. In some examples, the second tensile stressor layer has a greater shrinkage percentage due to the curing than the first tensile stressor layer. In one form, the second tensile stressor layer after the curing exerts a greater tensile stress than the first tensile stressor layer. The tensile stressors layers are utilized to improve carrier mobility in an N-channel transistor and thus enhance transistor performance. In one form a single group of overlying tensile stressor layers is provided with each layer being increasingly thicker and having increasingly more hydrogen prior to being cured. In other embodiments multiple overlying groups are formed, each group having a similar repeating depth and hydrogen profile.

Abstract: A method of making a semiconductor device includes a substrate having a semiconductor layer having a first portion for non-volatile memory and a second portion exclusive of the first portion. A first dielectric layer is formed on the semiconductor layer. A plasma nitridation is performed on the first dielectric layer. A first plurality of nanoclusters is formed over the first portion and a second plurality of nanoclusters over the second portion. The second plurality of nanoclusters is removed. A second dielectric layer is formed over the semiconductor layer. A conductive layer is formed over the second dielectric layer.

Abstract: A method of making a semiconductor device includes a substrate having a semiconductor layer having a first portion for non-volatile memory and a second portion exclusive of the first portion. A first dielectric layer is formed over the semiconductor layer. A first plurality of nanoclusters is formed over the first portion and a second plurality of nanoclusters is formed over the second portion. A layer of nitrided oxide is formed around each nanocluster of the first plurality and the second plurality of nanoclusters. Remote plasma nitridation is performed on the layers of nitrided oxide of the first plurality of nanoclusters. The nanoclusters are removed from the second portion. A second dielectric layer is formed over the semiconductor layer. A conductive layer is formed over the second dielectric layer.

Abstract: The present invention is directed to novel polypeptides, nucleic acids and related molecules which have an effect on or are related to the cell cycle. Also provided herein are vectors and host cells comprising those nucleic acid sequences, chimeric polypeptide molecules comprising the polypeptides of the present invention fused to heterologous polypeptide sequences, antibodies which bind to the polypeptides of the present invention and to methods for producing the polypeptides of the present invention. Further provided by the present invention are methods for identifying novel compositions which mediate cell cycle bioactivity, and the use of such compositions in diagnosis and treatment of disease.

Abstract: The present invention is directed to novel polypeptides, nucleic acids and related molecules which have an effect on or are related to the cell cycle. Also, provided herein are vectors and host cells comprising those nucleic acid sequences, chimeric polypeptide molecules comprising the polypeptides of the present invention fused to heterologous polypeptide sequences, antibodies which bind to the polypeptides of the present invention and to methods for producing the polypeptides of the present invention. Further provided by the present invention are methods for identifying novel compositions which mediate cell cycle bioactivity, and the use of such compositions in diagnosis and treatment of disease.

Abstract: A method for making a semiconductor device is provided which comprises (a) providing a semiconductor structure equipped with a gate and a channel region, said channel region being associated with the gate; (b) depositing a first sub-layer (131) of a first stressor material over the semiconductor structure, said first stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; (c) curing the first stressor material through exposure to a radiation source; (d) depositing a second sub-layer (133) of a second stressor material over the first sub-layer, said second stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; and (e) curing the second sub-layer of stressor material through exposure to a radiation source.

Abstract: A method for making a semiconductor device is provided which comprises (a) providing a semiconductor structure equipped with a gate (209) and a channel region, said channel region being associated with the gate; (b) depositing a first sub-layer (231) of a first stressor material over the semiconductor structure, said first stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; (c) curing the first stressor material through exposure to a radiation source; (d) depositing a second sub-layer (233) of a second stressor material over the first sub-layer, said second stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; and (e) curing the second sub-layer of stressor material through exposure to a radiation source.

Abstract: A gate dielectric is treated with a nitridation step and an anneal. After this, an additional nitridation step and anneal is performed. The second nitridation and anneal results in an improvement in the relationship between gate leakage current density and current drive of the transistors that are ultimately formed.

Abstract: The present invention is directed to a novel use of pyridone derivatives such as pirfenidone for the prevention and treatment of damages to tissues or organs induced by various cytotoxic agents, such as chemotherapeutic agents, biologics, immunosuppressants and radiation. Such prophylactic and/or therapeutic effects of the pyridone derivatives make it possible to increase therapeutic dosages of the cytotoxic agent, thereby enhancing the therapeutic efficacy of the cytotoxic agent and radiation therapy.

Abstract: Transmittance of a photomask is determined using optical metrology. In particular, reflectance of a portion of the photomask is determined by directing an incident beam of light at the portion of the photomask. The reflectance is determined by measuring light diffracted from the portion of the photomask. One or more geometric features of the portion of the photomask are determined using the measured light diffracted from the portion of the photomask. A wave coupling is determined using the determined one or more geometric features of the portion of the photomask. The transmittance of the photomask is determined using the determined wave coupling and the determined reflectance of the portion of the photomask.

Abstract: The present invention is directed to novel polypeptides, nucleic acids and related molecules which have an effect on or are related to the cell cycle. Also provided herein are vectors and host cells polypeptides of the present invention fused to heterologous polypeptide sequences, antibodies which bind to the polypeptides of the present invention and to methods for producing the polypeptides of the present invention. Further provided by the present invention are methods for identifying novel compositions which mediate cell cycle bioactivity, and the use of such compositions in diagnosis and treatment of disease.

Abstract: The present invention provides compositions and methods for modulating cell proliferation, survival, morphology, and migration. Nucleic acids encoding proteins, and proteins so encoded which are capable of modulating proliferation, survival, morphology, and migration in mammalian cells are provided. Compositions and methods for the treatment of disorders related to cell proliferation, survival, morphology and migration are also provided. Prophylactics and methods for the prevention of such disorders are also provided. Also provided are compositions are methods for diagnostic and prognostic determination of such disorders. Further provided are assays for the identification of bioactive agents capable of modulating proliferation, survival, morphology, and migration in mammalian cells.

Abstract: A method for comparing a search print image comprising a first plurality of minutiae to a file print image comprising a second plurality of minutiae and the apparatus implementing the method is provided. The method includes the steps of: aligning the search and file print images; obtaining the first and second plurality of minutiae, a first plurality of pseudo-ridges generated from a first direction field of the search print image and a second plurality of pseudo-ridges generated from a second direction field of the file print image; for each aligning of the search and file print images, generating a pseudo-ridge score, and determining a minutiae matching score; and providing, based on the pseudo-ridge and minutiae matching scores, an output that indicates a level of similarity between the search and file print images.

Abstract: A method for level three feature extraction from a print image extracts features associated with a selected ridge segment using a gray-level image under the guidance of at least one binary image. The level three features are a sequence of vectors each corresponding to a different level three characteristic and each representing a sequence of values at selected points on a print image. The level three features are stored and used for level three matching of two prints. During the matching stage, ridge segments are correlated against each other by shifting or a dynamic programming method to determine a measure of similarity between the print images.

Abstract: A method of making a semiconductor device includes a substrate having a semiconductor layer having a first portion for non-volatile memory and a second portion exclusive of the first portion. A first dielectric layer is formed on the semiconductor layer. A plasma nitridation is performed on the first dielectric layer. A first plurality of nanoclusters is formed over the first portion and a second plurality of nanoclusters over the second portion. The second plurality of nanoclusters is removed. A second dielectric layer is formed over the semiconductor layer. A conductive layer is formed over the second dielectric layer.

Abstract: The present invention is directed to novel apoptosis polypeptides such as the Apop1, Apop2, and Apop3 proteins and related molecules which are involved in modulating apoptosis and to nucleic acid molecules encoding those polypeptides. Also provided herein are vectors and host cells comprising those nucleic acid sequences, chimeric polypeptide molecules comprising the polypeptides of the present invention fused to heterologous polypeptide sequences, antibodies which bind to the polypeptides of the present invention and to methods for producing the polypeptides of the present invention. Further provided by the present invention are method for identifying novel compositions which modulate the biological activity of Apop1, Apop2, and Apop3, and the use of such compositions in diagnosis and treatment of disease.

Abstract: A method, apparatus and computer-readable storage element for determining quality of a print image, with the method including the steps of: estimating a centroid point of the physical print; setting dimensions of a quality computation frame based at least on a characteristic of the print image; centering the quality computation frame around the centroid point; determining, within the frame, a set of quality features; and computing a quality measure for the print image based on the set of quality features.