Abstract: An insulating layer formed by deposition is annealed in the presence of radical oxygen to reduce bond defects. A substrate is provided. An oxide layer is deposited overlying the substrate. The oxide layer has a plurality of bond defects. The oxide layer is annealed in the presence of radical oxygen to modify a substantial portion of the plurality of bond defects by using oxygen atoms. The anneal, in one form, is an in-situ steam generation (ISSG) anneal. In one form, the insulating layer overlies a layer of charge storage material, such as nanoclusters, that form a gate structure of a semiconductor storage device. The ISSG anneal repairs bond defects by oxidizing defective silicon bonds in the oxide layer when the oxide layer is silicon dioxide.

Abstract: A method and apparatus are described for integrating dual gate oxide (DGO) transistor devices (50, 52) and core transistor devices (51, 53) on a single substrate (15) having a silicon germanium channel layer (21) in the PMOS device areas (112, 113), where each DGO transistor device (50, 52) includes a metal gate (25), an upper gate oxide region (60, 84) formed from a second, relatively higher high-k metal oxide layer (24), and a lower gate oxide region (58, 84) formed from a first relatively lower high-k layer (22), and where each core transistor device (51, 53) includes a metal gate (25) and a core gate dielectric layer (72, 98) formed from only the second, relatively higher high-k metal oxide layer (24).

Abstract: A method of forming a semiconductor device includes providing a substrate for the semiconductor device. A base oxide layer is formed overlying the substrate by applying a rapid thermal oxidation (RTO) of the substrate in the presence of oxygen. A nitrogen-rich region is formed within and at a surface of the base oxide layer. The nitrogen-rich region overlies an oxide region in the base oxide layer. Afterwards, the semiconductor device is annealed in a dilute oxygen and hydrogen-free ambient of below 1 Torr partial pressure of the oxygen. The annealing heals bond damage in both the oxide region and the nitrogen-rich region in the base oxide layer. After annealing the semiconductor device in the dilute oxygen ambient, in-situ steam generation (ISSG) is used to grow and density the oxide region in the base oxide layer at an interface between the substrate and base oxide layer.

Abstract: A method for the diagnosis, prognosis, and monitoring of ovarian cancer in a subject by detecting hK10 in a sample from the subject, preferably a serum sample or tumor tissue extract. hK10 may be measured using a reagent that detects or binds to hK10 preferably antibodies specifically reactive with hK10 or a part thereof. Imaging methods for tumors associated with hK10 are also described using an agent that binds to hK10 which had a label for imaging the tumor.

Abstract: A method for making a semiconductor device is provided which comprises (a) providing a semiconductor structure equipped with a gate (209) and a channel region, said channel region being associated with the gate; (b) depositing a first sub-layer (231) of a first stressor material over the semiconductor structure, said first stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; (c) curing the first stressor material through exposure to a radiation source; (d) depositing a second sub-layer (233) of a second stressor material over the first sub-layer, said second stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; and (e) curing the second sub-layer of stressor material through exposure to a radiation source.

Abstract: A transistor structure of an electronic device can include a gate dielectric layer and a gate electrode. The gate electrode can have a surface portion between the gate dielectric layer and the rest of the gate electrode. The surface portion can be formed such that another portion of the gate electrode primarily sets the effective work function in the finished transistor structure.

Abstract: A method of forming a gate dielectric layer includes forming a first dielectric layer over a semiconductor substrate using a first plasma, performing a first in-situ plasma nitridation of the first dielectric layer to form a first nitrided dielectric layer, forming a second dielectric layer over the first dielectric layer using a second plasma, performing a second in-situ plasma nitridation of the second dielectric layer to form a second nitrided dielectric layer; and annealing the first nitrided dielectric layer and the second nitrided dielectric layer, wherein the gate dielectric layer comprises the first nitrided dielectric layer and the second nitrided dielectric layer. In other embodiments, the steps of forming a dielectric layer using a plasma and performing an in-situ plasma nitridation are repeated so that more than two nitrided dielectric layers are formed and used as the gate dielectric layer.

Abstract: A semiconductor device has at least two tensile stressor layers that are cured with UV radiation. A second tensile stressor layer is formed after a first stressor layer. In some examples, the tensile stressor layers include silicon nitride and hydrogen. In some examples, the second tensile stressor layer has a greater shrinkage percentage due to the curing than the first tensile stressor layer. In one form, the second tensile stressor layer after the curing exerts a greater tensile stress than the first tensile stressor layer. The tensile stressors layers are utilized to improve carrier mobility in an N-channel transistor and thus enhance transistor performance. In one form a single group of overlying tensile stressor layers is provided with each layer being increasingly thicker and having increasingly more hydrogen prior to being cured. In other embodiments multiple overlying groups are formed, each group having a similar repeating depth and hydrogen profile.

Abstract: A transistor structure of an electronic device can include a gate dielectric layer and a gate electrode. The gate electrode can have a surface portion between the gate dielectric layer and the rest of the gate electrode. The surface portion can be formed such that another portion of the gate electrode primarily sets the effective work function in the finished transistor structure.

Abstract: Transmittance of a photomask is determined using optical metrology. In particular, reflectance of a portion of the photomask is determined by directing an incident beam of light at the portion of the photomask. The reflectance is determined by measuring light diffracted from the portion of the photomask. One or more geometric features of the portion of the photomask are determined using the measured light diffracted from the portion of the photomask. A wave coupling is determined using the determined one or more geometric features of the portion of the photomask. The transmittance of the photomask is determined using the determined wave coupling and the determined reflectance of the portion of the photomask.

Abstract: A power-on reset circuit includes a voltage-dividing circuit, a first switch and a second switch. The voltage-dividing circuit includes a first resistor and a second resistor connected in series. A first terminal of the voltage-dividing circuit is configured for connect to a power source, a second terminal of the voltage-dividing circuit is grounded. A first switch includes an input terminal, a control terminal, and an output terminal. The input terminal of the first switch is connected to the first terminal of the voltage-dividing circuit via the first resistor, and the output terminal of the first switch is grounded. A second switch includes an input terminal connected to the first terminal of the voltage-dividing circuit, a control terminal connected to the control terminal of the first switch, and an output terminal connected to a reset terminal of an electronic device.

Abstract: A method of forming a semiconductor device includes providing a substrate for the semiconductor device. A base oxide layer is formed overlying the substrate by applying a rapid thermal oxidation (RTO) of the substrate in the presence of oxygen. A nitrogen-rich region is formed within and at a surface of the base oxide layer. The nitrogen-rich region overlies an oxide region in the base oxide layer. Afterwards, the semiconductor device is annealed in a dilute oxygen and hydrogen-free ambient of below 1 Torr partial pressure of the oxygen. The annealing heals bond damage in both the oxide region and the nitrogen-rich region in the base oxide layer. After annealing the semiconductor device in the dilute oxygen ambient, in-situ steam generation (ISSG) is used to grow and density the oxide region in the base oxide layer at an interface between the substrate and base oxide layer.

Abstract: The present invention provides a system and method for providing enhanced features for streaming video-on-demand systems. The system comprises a media server and a client player, wherein a user can select a desired video for transmission from the media server to the client player for subsequent display for the user via the client player. The system comprises a mechanism that enables a user to interactively select a desired new starting point for the display of the selected video signal. The mechanism is provided by a first and second series of searchable index frames, wherein the first series is generated by the media server during transmission of the selected video signal and the second series is generated by the client player during receipt of the selected video signal. Upon receipt by the client player of the desired new starting point, the first or second series are accessed in order to identify a required searchable index frame that best represents the desired new starting point.

Abstract: A method of forming a semiconductor device includes forming a high dielectric constant material over a semiconductor substrate, forming a conductive material over the high dielectric constant material, and performing an anneal in a non-oxidizing ambient using ultraviolet radiation to remove defects in the high dielectric constant material. Examples of a non-oxidizing ambient include for example nitrogen, deuterium, a deuterated forming gas (N2/D2), helium, argon or a combination of any two or more of these. Additional anneals using ultraviolet radiation may be performed. These additional anneals may occur in non-oxidizing or oxidizing ambients.

Abstract: The present invention is directed to novel apoptosis polypeptides such as the Apop1, Apop2, and Apop3 proteins and related molecules which are involved in modulating apoptosis and to nucleic acid molecules encoding those polypeptides. Also provided herein are vectors and host cells comprising those nucleic acid sequences, chimeric polypeptide molecules comprising the polypeptides of the present invention fused to heterologous polypeptide sequences, antibodies which bind to the polypeptides of the present invention and to methods for producing the polypeptides of the present invention. Further provided by the present invention are method for identifying novel compositions which modulate the biological activity of Apop1, Apop2, and Apop3, and the use of such compositions in diagnosis and treatment of disease.

Abstract: The invention provides a new tumor tag, RL5 protein, the polynucleotide encoding RL5 protein, and the method of producing RL5 protein by recombinant technology. The invention also discloses the use of RL5 protein and the polynucleotides encoding RL5 protein, e.g., in diagnosing and treating tumor, as well as the pharmaceutical composition containing RL5 protein or the antibody against it.

Abstract: The invention provides a new kind of tumor marker RL9/RL10 protein, the polynucleotide encoding the polypeptide, and the method of producing RL9/RL10 protein by recombinant technology. The invention also discloses the use of RL9/RL10 protein and the polynucleotides encoding RL9/RL10 protein, e.g., in diagnosing and treating tumor, as well as the pharmaceutical composition containing RL9/RL10 protein or the antibody against it.

Abstract: A method is performed in a print identification system to segment a non-segmented slap print image into its finger components. The method includes: receiving, for a hand, a non-segmented slap print image and a corresponding plurality of roll print images each corresponding to a different finger number; comparing the roll print images to the non-segmented slap print image to determine a number of mated minutiae areas on the non-segmented slap print image; detecting a number of print components from the non-segmented slap print image using the plurality of mated minutiae areas; and selecting a number of final print components from the detected print components and assigning finger numbers to the final print components, using the plurality of mated minutiae areas.

Abstract: A semiconductor device has at least two tensile stressor layers that are cured with UV radiation. A second tensile stressor layer is formed after a first stressor layer. In some examples, the tensile stressor layers include silicon nitride and hydrogen. In some examples, the second tensile stressor layer has a greater shrinkage percentage due to the curing than the first tensile stressor layer. In one form, the second tensile stressor layer after the curing exerts a greater tensile stress than the first tensile stressor layer. The tensile stressors layers are utilized to improve carrier mobility in an N-channel transistor and thus enhance transistor performance. In one form a single group of overlying tensile stressor layers is provided with each layer being increasingly thicker and having increasingly more hydrogen prior to being cured. In other embodiments multiple overlying groups are formed, each group having a similar repeating depth and hydrogen profile.

Abstract: A method of making a semiconductor device includes a substrate having a semiconductor layer having a first portion for non-volatile memory and a second portion exclusive of the first portion. A first dielectric layer is formed on the semiconductor layer. A plasma nitridation is performed on the first dielectric layer. A first plurality of nanoclusters is formed over the first portion and a second plurality of nanoclusters over the second portion. The second plurality of nanoclusters is removed. A second dielectric layer is formed over the semiconductor layer. A conductive layer is formed over the second dielectric layer.