Abstract: The present application discloses a display panel and a display apparatus. The display panel has a first area and a second area. The display panel includes an array substrate, an isolation structure provided with light-transmitting openings and isolation openings, the isolation openings being located at least in the first area, and the light-transmitting openings being located in the second area, a light-emitting layer including light-emitting units arranged in the isolation openings, and a touch layer having a touch area and a non-touch area, the touch layer including a touch electrode arranged in the touch area and a dummy electrode arranged in the non-touch area, the touch electrode being insulated from the dummy electrode, at least part of the touch area being located in the first area, and at least part of the non-touch area being located in the second area.

Abstract: A display panel and a display device. A display panel includes: a base plate, an isolation structure with isolation openings and first openings, first light-emitting units and second light-emitting units, first electrodes including first sub-electrodes and second sub-electrodes, and second electrodes. An orthographic projection of the second electrode on the base plate is offset from an orthographic projection of the first opening on the base plate. The first light-emitting units and the second light-emitting units are disposed in the isolation openings and in the first openings, respectively. The first sub-electrodes are disposed at a side of the first light-emitting units away from the base plate and the second sub-electrodes are disposed in the first openings and located at a side of the second light-emitting units away from the base plate.

Abstract: A display panel and a display apparatus. The display panel includes a substrate, an isolation structure and a touch layer. The isolation structure is arranged on the substrate and encloses a plurality of isolation openings. The isolation structure is provided with a light-transmitting opening. The substrate includes a signal transmission layer and a signal shielding layer, the signal shielding layer is located on a side of the signal transmission layer away from the substrate, and the signal shielding layer includes a first signal line and a light-transmitting shielding portion. The orthographic projection of the light-transmitting opening on the substrate at least partially overlaps with an orthographic projection of the light-transmitting shielding portion on the substrate.

Abstract: The present application discloses a display panel and a driving method thereof, and a display apparatus. In the display panel, the data lines run through a first display area and a second display area; each of the data lines include a first segment and a second segment, the first segment is located in the first display area, and the second segment is located in the second display area, and the first segment and the second segment are connected by a first switching element; a first gate driving circuit is configured to drive the first display area, the second gate driving circuit is configured to drive the second display area, the first gate driving circuit receives a first trigger signal, and the second gate driving circuit receives a second trigger signal.

Abstract: A methionine adenosyltransferase (MAT) 2A inhibitor represented by formula (I), a preparation method thereof, a pharmaceutical composition comprising the same, and pharmaceutical use thereof are disclosed. The compound has excellent MAT2A inhibitory activity.

Abstract: The invention relates to a method of recycling lithium iron phosphate batteries with the aim of enabling the isolated recovery of elements from black mass. Black mass comprising at least cathodic and anodic components is immersed in a pH 13-14 solution to obtain a first leachate and first solid residue. The first leachate is immersed in a 4-6M acid solution to obtain a second leachate. The second leachate is passed through a first ion-exchange column where fluoride ions are retained and a second ion-exchange column where copper ions are to obtain a second eluate. The pH of the second eluate is adjusted to about 2.5-5 and a quantity of phosphoric acid that is sufficient to achieve an equivalent stoichiometric ratio of ferric iron and phosphate anions is added to obtain a first solution and an iron (III) phosphate precipitate. The first solution is combined with the first leachate to obtain a second solution. The pH of the second solution is adjusted to about 6.

Abstract: A display panel and a method for manufacturing a display panel. The display panel includes: a substrate; a dam structure disposed on the substrate and located in a transition area, and the dam structure being disposed surrounding at least a portion the transition area; a light-emitting layer disposed on the substrate and including a body portion located in the display area and a hollow portion penetrating through the body portion, and the hollow portion including a first vacant segment formed by a disconnect of the body portion in the aperture area and a second vacant segment located between the dam structure and the aperture area.

Abstract: The invention relates to a method of recycling lithium iron phosphate batteries with the aim of enabling the isolated recovery of elements from black mass. Black mass comprising at least cathodic and anodic components is immersed in a pH 13-14 solution to obtain a first leachate and first solid residue. The first leachate is immersed in a 4-6M acid solution to obtain a second leachate. The second leachate is passed through a first ion-exchange column where fluoride ions are retained and a second ion-exchange column where copper ions are to obtain a second eluate. The pH of the second eluate is adjusted to about 2.5-5 and a quantity of phosphoric acid that is sufficient to achieve an equivalent stoichiometric ratio of ferric iron and phosphate anions is added to obtain a first solution and an iron (III) phosphate precipitate. The first solution is combined with the first leachate to obtain a second solution. The pH of the second solution is adjusted to about 6.

Abstract: This disclosure relates to a polishing composition that includes an abrasive, at least two pH adjusters, a barrier film removal rate enhancer, a low-k removal rate inhibitor, and an azole-containing corrosion inhibitor. This disclosure also features a method of using the polishing composition to polish a substrate containing copper and silicon oxide.

Abstract: The invention relates to a method of recycling lithium iron phosphate batteries with the aim of enabling the isolated recovery of elements from black mass. Black mass comprising at least cathodic and anodic components is immersed in a pH 13-14 solution to obtain a first leachate and first solid residue. The first leachate is immersed in a 4-6M acid solution to obtain a second leachate. The second leachate is passed through a first ion-exchange column where fluoride ions are retained and a second ion-exchange column where copper ions are to obtain a second eluate. The pH of the second eluate is adjusted to about 2.5-5 and a quantity of phosphoric acid that is sufficient to achieve an equivalent stoichiometric ratio of ferric iron and phosphate anions is added to obtain a first solution and an iron (III) phosphate precipitate. The first solution is combined with the first leachate to obtain a second solution. The pH of the second solution is adjusted to about 6.

Abstract: Expression-enhancing nucleotide sequences for eukaryotic expressions systems are provided that allow for enhanced and stable expression of recombinant proteins in eukaryotic cells. Genomic integration sites providing enhanced expression and methods of use thereof are provided for expression of a gene of interest in a eukaryotic cell. Chromosomal loci, sequences, and vectors are provided for enhanced and stable expression of genes in eukaryotic cells.

Abstract: Methods for forming hafnium oxide within a three-dimensional structure, such as in a high aspect ratio hole, are provided. The methods may include depositing a first hafnium-containing material, such as hafnium nitride or hafnium carbide, in a three-dimensional structure and subsequently converting the first hafnium-containing material to a second hafnium-containing material comprising hafnium oxide by exposing the first hafnium-containing material to an oxygen reactant. The volume of the second hafnium-containing material may be greater than that of the first hafnium-containing material. Voids or seams formed during the deposition of the first hafnium-containing material in the three-dimensional structure may be filled by the expanded material after exposing the first hafnium-containing material to the oxygen reactant. Thus, the three-dimensional structure, such as a high aspect ratio hole, can be filled with hafnium oxide substantially free of voids or seams.

Abstract: Expression-enhancing nucleotide sequences for eukaryotic expressions systems are provided that allow for enhanced and stable expression of recombinant proteins in eukaryotic cells. Genomic integration sites providing enhanced expression and methods of use thereof are provided for expression of a gene of interest in a eukaryotic cell. Chromosomal loci, sequences, and vectors are provided for enhanced and stable expression of genes in eukaryotic cells.

Abstract: An integrated circuit and an electronic device, and provides an integrated circuit having better area efficiency. The integrated circuit may be a resistive random access memory, which includes a plurality of resistive memory cells arranged in row and column directions; each resistive memory cell includes a resistive switching unit and a switch unit coupled to the resistive switching unit; the resistive switching units in the column direction are respectively coupled to corresponding source lines; the source lines include first source lines and second source lines; and the first source lines and the second source lines are located on different interconnect layers.

Abstract: A reaction system including a chemical storage assembly in fluid communication with both a remote plasma unit and a bypass line for providing both a plasma activated cleaning species and a non-plasma activated cleaning species to a reaction chamber.

Abstract: A resistive random access memory (RRAM) and its manufacturing method are provided. The RRAM includes a substrate having an array region and a peripheral region. A plurality of memory cells and a gap-filling dielectric layer overlying the memory cells are located on the substrate and in the array region. A buffer layer only in the array region covers the gap-filling dielectric layer, and its material layer is different from that of the gap-filling dielectric layer. A first low-k dielectric layer is only located in the peripheral region, and its material is different from that of the buffer layer. A dielectric constant of the first low-k dielectric layer is less than 3. A top surface of the first low-k dielectric layer is coplanar with that of the buffer layer. A first conductive plug passes through the buffer layer and the gap-filling dielectric layer and contacts one of the memory cells.

Abstract: Expression-enhancing nucleotide sequences for eukaryotic expressions systems are provided that allow for enhanced and stable expression of recombinant proteins in eukaryotic cells. Genomic integration sites providing enhanced expression and methods of use thereof are provided for expression of a gene of interest in a eukaryotic cell. Chromosomal loci, sequences, and vectors are provided for enhanced and stable expression of genes in eukaryotic cells.

Abstract: An RRAM structure and its manufacturing method are provided. The RRAM structure includes a bottom electrode layer, a resistance switching layer, and an implantation control layer sequentially formed on a substrate. The resistance switching layer includes a conductive filament confined region and an outer region surrounding the conductive filament confined region. The RRAM structure includes a protective layer and a top electrode layer. The protective layer conformally covers the bottom electrode layer, the resistance switching layer, and the implantation control layer and has a first opening. The top electrode layer is located on the implantation control layer, and a portion of the top electrode layer is filled into the first opening. The position of the top electrode layer corresponds to that of the conductive filament confined region, and the top surface of the top electrode layer is higher than that of the protective layer.