Abstract: An outdoor microwave radio, which supports two channels aggregation, includes a cable interface, a radio frequency processing section, and an antenna coupling section. The cable interface includes two cables, each cable configured to receive an analog intermediate frequency signal from a modem output at a remote indoor microwave radio. The radio frequency processing section configured to process the two analog intermediate frequency signals into one analog radio frequency signal. The antenna coupling section includes a co-plane circulator for connecting to an antenna and transmitting the analog radio frequency signal using the antenna.

Abstract: An RRAM circuit includes a first RRAM cell, a second RRAM cell, a first transistor, and a second transistor. The first RRAM cell is coupled between a first bit line and a first node. The second RRAM cell is coupled between a second bit line and the first node. The first transistor includes a first gate terminal, a first drain terminal, and a first source terminal. The first gate terminal is coupled to a first word line, the first drain terminal is coupled to the first node, and the first source terminal is coupled to a first source line. The second gate terminal is coupled to the first word line, the second drain terminal is coupled to the first node, and the second source terminal is coupled to a second source line.

Abstract: A method of manufacturing a semiconductor device includes forming a first dielectric layer and a through hole passing through the first dielectric layer over a substrate; forming a plurality of dummy contacts in the through hole; forming a plurality of first dummy wires on the plurality of dummy contacts; filling a second dielectric layer between the plurality of first dummy wires, wherein the second dielectric layer has a first air gap; removing the dummy contacts and the first dummy wires to expose the through hole, thereby forming a first wiring trench over the through hole; and forming a contact and a first wire in the through hole and the first wiring trench.

Abstract: Systems and methods for combining signals from multiple active wireless receivers are discussed herein. An exemplary system comprises a first downconverter, a phase comparator, a phase adjuster, and a second downconverter. The first downconverter may be configured to downconvert a received signal from a first antenna to an intermediate frequency to create an intermediate frequency signal. The phase comparator may be configured to mix the received signal and a downconverted signal to create a mixed signal, compare a phase of the mixed signal to a predetermined phase, and generate a phase control signal based on the comparison, the downconverted signal being associated with the received signal from the first antenna. The phase adjuster may be configured to alter the phase of the intermediate frequency signal based on the phase control signal. The second downconverter may be configured to downconvert the phase-shifted intermediate frequency signal to create an output signal.

Abstract: Systems and methods for combining signals from multiple active wireless receivers are discussed herein. An exemplary system comprises a first downconverter, a phase comparator, a phase adjuster, and a second downconverter. The first downconverter may be configured to downconvert a received signal from a first antenna to an intermediate frequency to create an intermediate frequency signal. The phase comparator may be configured to mix the received signal and a downconverted signal to create a mixed signal, compare a phase of the mixed signal to a predetermined phase, and generate a phase control signal based on the comparison, the downconverted signal being associated with the received signal from the first antenna. The phase adjuster may be configured to alter the phase of the intermediate frequency signal based on the phase control signal. The second downconverter may be configured to downconvert the phase-shifted intermediate frequency signal to create an output signal.

Abstract: A resistive random access memory is provided. The resistive random access memory includes a bottom electrode over a substrate, a top electrode, a resistance-switching layer, an oxygen exchange layer, and a sidewall protective layer. The top electrode is disposed over the bottom electrode. The resistance-switching layer is disposed between the bottom electrode and the top electrode. The oxygen exchange layer is disposed between the resistance-switching layer and the top electrode. The sidewall protective layer containing metal or semiconductor is disposed at sidewalls of the resistance-switching layer, and the sidewalls of the resistance-switching layer is doped with the metal or semiconductor from the sidewall protective layer.

Abstract: Provided is a method of fabricating a resistive memory including forming a first electrode and a second electrode opposite to each other; forming a variable resistance layer between the first electrode and the second electrode; forming an oxygen exchange layer between the variable resistance layer and the second electrode; and forming a protection layer at least covering sidewalls of the oxygen exchange layer.

Abstract: Expression-enhancing nucleotide sequences for eukaryotic expressions systems are provided that allow for enhanced and stable expression of recombinant proteins in eukaryotic cells. Genomic integration sites providing enhanced expression and methods of use thereof are provided for expression of a gene of interest in a eukaryotic cell. Chromosomal loci, sequences, and vectors are provided for enhanced and stable expression of genes in eukaryotic cells.

Abstract: Provided are a resistive memory and a method of fabricating the resistive memory. The resistive memory includes a first electrode, a second electrode, a variable resistance layer, an oxygen exchange layer, and a protection layer. The first electrode and the second electrode are arranged opposite to each other. The variable resistance layer is arranged between the first electrode and the second electrode. The oxygen exchange layer is arranged between the variable resistance layer and the second electrode. The protection layer is arranged at least on sidewalls of the oxygen exchange layer.

Abstract: With the introduction of this two channel aggregation RFU architecture, a series of new trunking configurations are proposed. Comparing with existing tracking radio configurations, this two channel aggregation radio architecture has the following key advantages: compact 4+0, 6+0 and N+0 trunking radio architectures; an innovative compact 2+2 XPIC trunking radio architecture; a new 2+0 standby radio architecture; an extremely compact N+0 and N+N radio architectures; 5. the feasibility of many higher order N+0 and N+N XPIC compact configurations; the feasibility and possibility that the whole trunking radio can be directly mounts to the antenna, largely boosts the overall system gain by removing this flexible waveguide between antenna and traditional trunking radio. Single two-channel aggregated RFU with two-channel aggregated modem can support up to 4 56 MHz RF channels. With 4096QAM modulation, single RFU can support up to 2.5 Gbits/s throughput.

Abstract: Systems and methods for combining signals from multiple active wireless receivers are discussed herein. An exemplary system comprises a first downconverter, a phase comparator, a phase adjuster, and a second downconverter. The first downconverter may be configured to downconvert a received signal from a first antenna to an intermediate frequency to create an intermediate frequency signal. The phase comparator may be configured to mix the received signal and a downconverted signal to create a mixed signal, compare a phase of the mixed signal to a predetermined phase, and generate a phase control signal based on the comparison, the downconverted signal being associated with the received signal from the first antenna. The phase adjuster may be configured to alter the phase of the intermediate frequency signal based on the phase control signal. The second downconverter may be configured to downconvert the phase-shifted intermediate frequency signal to create an output signal.

Abstract: A circulator includes a substrate having a blind hole. The substrate has one or more dielectric layers and one or more conductive layers, including a top conductive layer on a top surface of the substrate. The circulator includes a plurality of conductive microstrips formed on the top conductive layer on the top surface of the substrate and a ferrite disk positioned within the blind hole. A top surface of the ferrite disk is flush with a top surface of the plurality of conductive microstrips. The circulator further includes a flat metal film coupling a top surface of the ferrite disk to the conductive microstrips disposed on the top surface of the substrate.

Abstract: An exemplary system comprises a linearizer module, a first upconverter module, a power amplifier module, a signal sampler module, and a downconverter module. The linearizer module may be configured to receive a first intermediate frequency signal and to adjust the first intermediate frequency signal based on a reference signal and a signal based on a second intermediate frequency signal. The first upconverter module may be configured to receive and up-convert a signal based on the adjusted first intermediate frequency signal to a radio frequency signal. The power amplifier module may be configured to receive and amplify a power of a signal based on the radio frequency signal. The signal sampler module may be configured to sample a signal based on the amplified radio frequency signal. The downconverter module may be configured to receive and down-convert a signal based on the sampled radio frequency signal to the second intermediate frequency signal.

Abstract: Systems and methods for improved chip device performance are discussed herein. An exemplary chip device for use in an integrated circuit comprises a bottom and a top opposite the bottom. The chip device comprises a through-chip device interconnect and a clearance region. The through-chip device interconnect is configured to provide an electrical connection between a ground plane trace on the bottom and a chip device path on the top of the chip device. The clearance region on the bottom of the chip device comprises an electrically conductive substance. The size and shape of the clearance region assist in impedance matching. The chip device path on the top of the chip device may further comprise at least one tuning stub. The size and shape of the at least one tuning stub also assist in impedance matching.

Abstract: A power-saving method is provided. The method is used in a device and includes: measuring, by a light sensor of the device, luminous intensity of ambient light and generating a measurement value of ambient light; determining whether the measurement value of ambient light is greater than a threshold; and controlling the device to switch between a quick-start mode and a standby mode based on a determination result indicating whether the measurement value of ambient light is greater than the threshold.

Abstract: A circulator plate for a microwave radio system is disclosed. The circulator plate includes a circulator including a first port, a second port, and a third port; a first isolator including an input port and an output port; a second isolator including an input port and an output port; and a splitter including an input port, a first output port, and a second output port. The output port of the first isolator is coupled to the first port of the circulator. The input port of the second isolator is coupled to the third port of the circulator. The input port of the splitter is coupled to the output port of the second isolator. The first output port of the splitter is configured to be coupled to a first receiver. The second output port of the splitter is configured to be coupled to a second receiver.

Abstract: A resistive random access memory (RRAM) structure and its forming method are provided, which includes an interlayer dielectric layer on a substrate. The interlayer dielectric layer is a dielectrics including oxygen. The RRAM structure also includes an oxygen-diffusion barrier layer on the interlayer dielectric layer, and a bottom electrode layer on the oxygen-diffusion barrier layer. The bottom electrode layer includes a first electrode layer, a first oxygen-rich layer on the first electrode layer, and a second electrode layer on the first oxygen-rich layer. The RRAM structure also includes a resistance switching layer on the bottom electrode layer, and a top electrode layer on the resistance switching layer.