Abstract: The present invention discloses a super large tonnage detachable hook. The hook comprises: a hook rod, a hook shaft, a hook body, a spherical roller bearing, and a thrust spherical roller bearing. The hook also contains a connection component which connects the hook rod to the hook body. The split-type self-locking sleeve is integrally connected to the hook rod via the hook hoop holder. Meshing of the sleeve with the toothed sleeve of the hook rod is adopted to transmit the load, and the bearing capacity is greatly improved compared with the traditional screw connection. The hook of the present invention can withstand the downward and upward bi-directional load, which solves the problem that the traditional hook is prone to damage once it hits the ground. The hook is forged with 30CrNiMo8, which can lift an extremely large weight of more than 5,000 tons.

Abstract: A noise detection method for time-series vegetation index (TSVI) derived from remote sensing images. Firstly, unit root test is used to classify observation values of each pixel into a stationary series or a non-stationary series; for the non-stationary, an appropriate mathematical model is used to model discrete TSVI, then differences between actual observation values and prediction values of the model are calculated and recorded as a deviation. As the deviation has removed seasonal components, the non-stationary series is transformed into a stationary series. For a stationary series or deviation data, noise detection is performed based on the assumption that observation values are distributed within a certain range around mean values; then model fitting and noise detection are iteratively carried out with remained observation values—until the iterations reached the maximum number or no noise is detected at one iteration.

Abstract: Methods for forming hafnium oxide within a three-dimensional structure, such as in a high aspect ratio hole, are provided. The methods may include depositing a first hafnium-containing material, such as hafnium nitride or hafnium carbide, in a three-dimensional structure and subsequently converting the first hafnium-containing material to a second hafnium-containing material comprising hafnium oxide by exposing the first hafnium-containing material to an oxygen reactant. The volume of the second hafnium-containing material may be greater than that of the first hafnium-containing material. Voids or seams formed during the deposition of the first hafnium-containing material in the three-dimensional structure may be filled by the expanded material after exposing the first hafnium-containing material to the oxygen reactant. Thus, the three-dimensional structure, such as a high aspect ratio hole, can be filled with hafnium oxide substantially free of voids or seams.

Abstract: Expression-enhancing nucleotide sequences for eukaryotic expressions systems are provided that allow for enhanced and stable expression of recombinant proteins in eukaryotic cells. Genomic integration sites providing enhanced expression and methods of use thereof are provided for expression of a gene of interest in a eukaryotic cell. Chromosomal loci, sequences, and vectors are provided for enhanced and stable expression of genes in eukaryotic cells.

Abstract: Provided is a method of fabricating a resistive memory including forming a first electrode and a second electrode opposite to each other; forming a variable resistance layer between the first electrode and the second electrode; forming an oxygen exchange layer between the variable resistance layer and the second electrode; and forming a protection layer at least covering sidewalls of the oxygen exchange layer.

Abstract: A method of manufacturing a semiconductor device includes forming a first dielectric layer and a through hole passing through the first dielectric layer over a substrate; forming a plurality of dummy contacts in the through hole; forming a plurality of first dummy wires on the plurality of dummy contacts; filling a second dielectric layer between the plurality of first dummy wires, wherein the second dielectric layer has a first air gap; removing the dummy contacts and the first dummy wires to expose the through hole, thereby forming a first wiring trench over the through hole; and forming a contact and a first wire in the through hole and the first wiring trench.

Abstract: A resistive random access memory structure includes a semiconductor substrate, a transistor, a bottom electrode, a plurality of top electrodes, and a resistive-switching layer. The transistor is disposed over the semiconductor substrate. The bottom electrode is disposed over the semiconductor substrate and is electrically connected to a drain region of the transistor. The plurality of top electrodes is disposed along a sidewall of the bottom electrode. The resistance-switching layer is disposed between the bottom electrode and the plurality of top electrodes.

Abstract: A noise detection method for time-series vegetation index (TSVI) derived from remote sensing images. Firstly, unit root test is used to classify observation values of each pixel into a stationary series or a non-stationary series; for the non-stationary, an appropriate mathematical model is used to model discrete TSVI, then differences between actual observation values and prediction values of the model are calculated and recorded as a deviation. As the deviation has removed seasonal components, the non-stationary series is transformed into a stationary series. For a stationary series or deviation data, noise detection is performed based on the assumption that observation values are distributed within a certain range around mean values; then model fitting and noise detection are iteratively carried out with remained observation values—until the iterations reached the maximum number or no noise is detected at one iteration.

Abstract: An RRAM structure and its manufacturing method are provided. The RRAM structure includes a bottom electrode layer, a resistance switching layer, and an implantation control layer sequentially formed on a substrate. The resistance switching layer includes a conductive filament confined region and an outer region surrounding the conductive filament confined region. The RRAM structure includes a protective layer and a top electrode layer. The protective layer conformally covers the bottom electrode layer, the resistance switching layer, and the implantation control layer and has a first opening. The top electrode layer is located on the implantation control layer, and a portion of the top electrode layer is filled into the first opening. The position of the top electrode layer corresponds to that of the conductive filament confined region, and the top surface of the top electrode layer is higher than that of the protective layer.

Abstract: A resistive random access memory structure includes a semiconductor substrate, a transistor, a bottom electrode, a plurality of top electrodes, and a resistive-switching layer. The transistor is disposed over the semiconductor substrate. The bottom electrode is disposed over the semiconductor substrate and is electrically connected to a drain region of the transistor. The plurality of top electrodes is disposed along a sidewall of the bottom electrode. The resistance-switching layer is disposed between the bottom electrode and the plurality of top electrodes.

Abstract: An RRAM circuit includes a first RRAM cell, a second RRAM cell, a first transistor, and a second transistor. The first RRAM cell is coupled between a first bit line and a first node. The second RRAM cell is coupled between a second bit line and the first node. The first transistor includes a first gate terminal, a first drain terminal, and a first source terminal. The first gate terminal is coupled to a first word line, the first drain terminal is coupled to the first node, and the first source terminal is coupled to a first source line. The second gate terminal is coupled to the first word line, the second drain terminal is coupled to the first node, and the second source terminal is coupled to a second source line.

Abstract: A resistive random access memory (RRAM) and its manufacturing method are provided. The RRAM includes a substrate having an array region and a peripheral region. A plurality of memory cells and a gap-filling dielectric layer overlying the memory cells are located on the substrate and in the array region. A buffer layer only in the array region covers the gap-filling dielectric layer, and its material layer is different from that of the gap-filling dielectric layer. A first low-k dielectric layer is only located in the peripheral region, and its material is different from that of the buffer layer. A dielectric constant of the first low-k dielectric layer is less than 3. A top surface of the first low-k dielectric layer is coplanar with that of the buffer layer. A first conductive plug passes through the buffer layer and the gap-filling dielectric layer and contacts one of the memory cells.

Abstract: The present invention discloses a super large tonnage detachable hook. The hook comprises: a hook rod, a hook shaft, a hook body, a spherical roller bearing, and a thrust spherical roller bearing. The hook also contains a connection component which connects the hook rod to the hook body. The split-type self-locking sleeve is integrally connected to the hook rod by means of the hook hoop holder. This connection form adopts the meshing of the sleeve and the toothed sleeve of the hook rod to transmit the load, and the bearing capacity is greatly improved compared with the traditional screw connection. The split-type self-locking sleeve can hold the toothed sleeve on the hook rod from both sides respectively. This new type of hook adopts a special structure force transmission system, so that the hook can withstand the downward and upward bi-directional load, which solves the problem that the traditional hook is prone to damage once it hits the ground.