Abstract: A device is disclosed that comprises a base having first and second reservoirs, each having an inlet and an outlet, and a channel layer comprising an inlet channel in fluid communication with the inlets of the reservoirs, one or more outlet channels in fluid communication with the outlets of the reservoirs, and a channel network comprising at least one channel extending therebetween. In a forward tilted position, a first fluid circuit is formed from the outlet of the first reservoir, through the one or more outlet channels, through the channel network, through the inlet channel, to the both the inlet and outlet of the second reservoir. In a reverse tilted position a second fluid circuit is formed from the outlet of the second reservoir, through the one or more outlet channels, through the channel network, through the inlet channel, to both the inlet and outlet of the first reservoir. Methods of using the device are also disclosed.

Abstract: This application provides a pixel of an image sensor and an image sensor. The pixel may include an optical-to-electrical conversion circuit and a composite measurement circuit. The optical-to-electrical conversion circuit may be configured to generate a first current based on incident light that is incident on the pixel. The composite measurement circuit is coupled to the optical-to-electrical conversion circuit. The pixel may have a first operating mode and a second operating mode. The composite measurement circuit may generate a first pulse signal based on the first current when the pixel operates in the first operating mode, where the first pulse signal represents the intensity information of the incident light. When the pixel operates in the second operating mode, the pixel receives a plurality of sampling signals, and generates a plurality of second pulse signals based on the first current and the plurality of sampling signals.

Abstract: This application provides a chip, a dynamic vision sensor, and a method for outputting pixel information. The chip includes a pixel array and a processing circuit, and each pixel row in the pixel array includes at least two pixel groups. In the processing circuit, based on a change of a light intensity value of at least one pixel in a first pixel group, a first signal including row location information of the first pixel group in the pixel array is generated, and a second signal including column location information of a pixel row in which the first pixel group is located is generated. The first signal and the second signal are sent to a pixel output circuit, to enable the pixel output circuit to accurately output location information of the first pixel group whose light intensity value changes in the pixel array.

Abstract: An array antenna module is provided, which includes a feed structure, a phase shift structure, and a radiation structure. The feed structure is connected to the phase shift structure, and the phase shift structure is connected to the radiation structure. The feed structure, the phase shift structure, and the radiation structure are all disposed on a glass substrate.

Abstract: A light adjustment device includes a first substrate and a second substrate that are arranged opposite to each other, a light adjustment module, and an ultraviolet light blocking layer. The light adjustment module is located between the first substrate and the second substrate. The ultraviolet light blocking layer is located between the first substrate and the light adjustment module or located inside the light adjustment module. A refractive index of the ultraviolet light blocking layer is greater than a refractive index of the first substrate.

Abstract: A capacitor assembly package structure, capacitor structure and method of manufacturing the same, and electronic device. The capacitor assembly package structure includes a capacitor assembly, an insulating package body and an electrode assembly. The capacitor assembly includes a plurality of capacitor structures that are stacked in sequence and electrically connected to each other. The insulating package body is configured to encapsulate a plurality of the capacitor structures. The electrode assembly includes a first electrode structure and a second electrode structure. Each of the capacitor structures includes a sintered silver layer, and the sintered silver layer includes more than 95% pure silver material. The average thickness of the sintered silver layer can be less than or equal to 1 ?m, and the resistivity of the sintered silver layer can be less than the resistivity of a silver glue material formed by mixing epoxy resin and silver powder.

Abstract: A capacitor assembly package structure and a method of manufacturing the same, and an electronic device are provided. The capacitor assembly package structure includes a capacitor assembly, a plurality of first insulating package bodies, a second insulating package body and an electrode assembly. The capacitor assembly includes a plurality of capacitor structures. The capacitor assembly has a plurality of stacking gaps. The first insulating package bodies are respectively received in the stacking gaps of the capacitor assembly. The second insulating package body is configured to cover the first insulating package bodies and the capacitor structures. The electrode assembly includes a first electrode structure and a second electrode structure. A solid content of each first insulating package body is less than a solid content of the second insulating package body so as to reduce the percentage of multiple pores formed in each stacking gap of the capacitor assembly.

Abstract: The present disclosure provides a dimming glass and a method for manufacturing the dimming glass. The dimming glass includes: at least one dimming functional layer sandwiched between two glass substrates, where a plurality of conductive leads is connected to a bonding circuit board, and a sealant filled between sealant regions of the two glass substrates. Each conductive lead includes a connecting end, a protruding end and an extension segment. The connecting end is connected to the bonding circuit board, the protruding end extends out of an outer side of an edge of the glass substrate, at least a part of the extension segment extends in a first direction which is an extension direction of an edge of the bonding side of the dimming functional layer, and the extension segment is located in the sealant region and is secured through the sealant.

Abstract: A singulated thin film lithium containing (TFLC) photonics device, as well as a method and system for singulating the device are described. The TFLC photonics device includes a device layer and a silicon substrate. The device layer includes a TFLC layer having a depth. The device layer also has a first sawn edge. The silicon substrate has a second sawn edge and includes an upper portion and a lower portion. The upper portion has the second sawn edge that is mutually aligned with the first sawn edge. The upper portion overhangs the lower portion.

Abstract: A top-down construction type assembly construction method for paved road surface, including the following steps: step I, manufacturing prefabricating slabs: using a top-down method to manufacture the prefabricating slabs, and providing bolt sleeves, inside the prefabricating slabs, which are evenly arranged in the prefabricating slabs; step II, mounting the prefabricating slabs: on a lower bearing plate, placing the prefabricating slabs in one step, performing a fine tuning on a position and an altitude of the prefabricating slabs, performing a grouting construction, finally forming the paved road surface; the prefabricating slabs are manufactured by laying bricks and pouring concrete, the prefabricating slabs are rolled over and mounted, thus eliminating on-site concrete bonding between bricks and the lower bearing plate, improving overall stability of the bricks and the prefabricating slabs after being mounted, assembled mounting for a paved road surface is implemented, and the construction period is shorte

Abstract: The present disclosure provides a data marking method, apparatus, system, device, and storage medium, and relates to the technical field of data processing, and in particular to fields such as artificial intelligence, big data, and deep learning.

Abstract: A circuit board includes a circuit substrate. The circuit substrate includes an insulating substrate and an electronic component embedded therein. The insulating substrate defines two first slots. A first phase change material fills in the two first slots and thermally connects to the electronic component. A first wiring layer is formed on a surface of the insulating substrate, the first wiring layer covers the two first slots and thermally connects to the first phase change material. A second wiring layer is formed on another surface of the insulating substrate. The second wiring layer includes a plurality of wiring portions and a wiring slot formed between adjacent wiring portions. The electronic component electrically connects to the second wiring portion. A second phase change material fills in at least one wiring slot and thermally connects a portion of the wiring portions together to form a heat dissipation zone.

Abstract: A circuit board with improved heat dissipation function and a method for manufacturing the circuit board are provided. The circuit board includes a heat dissipation substrate, an insulating layer on the heat dissipation substrate, an electronic component, a base layer on the insulating layer, and a circuit layer on the base layer. The heat dissipation substrate includes a phase change structure and a heat conductive layer wrapping the phase change structure. The heat dissipation substrate defines a first through hole. The insulating layer defines a groove for receiving the electronic component. A second through hole is defined in the circuit layer, the base layer, and the insulating layer. A bottom of the second through hole corresponds to the heat conductive layer. A heat conductive portion is disposed in the second through hole.

Abstract: Provided is a liquid crystal display panel. The liquid crystal display panel includes: a first substrate and a second substrate that are opposite to each other, and a liquid crystal layer between the first substrate and the second substrate. The liquid crystal display panel includes a plurality of sub-pixel regions. Each of the plurality of sub-pixel regions includes 4N sub-pixel sub-regions arranged in a single column, and the 4N sub-pixel sub-regions are organized into one group, or a plurality of groups that are adjacent to each other. A same group of sub-pixel sub-regions includes two first sub-regions and two second sub-regions. N is an integer greater than or equal to 1.

Abstract: Methods and apparatus for cleaning tooling parts in a substrate processing tool are provided herein. In some embodiments, a method of cleaning tooling parts in a substrate processing tool includes placing one or more dirty tools on a holder in a bonding chamber of a multi-chamber processing tool; transferring the holder from the bonding chamber to a cleaning chamber of the multi-chamber processing tool; cleaning the one or more dirty tools in the cleaning chamber to produce one or more cleaned tools; inspecting the one or more cleaned tools in an inspection chamber of the multi-chamber processing tool; and transferring the one or more cleaned tools to the bonding chamber.

Abstract: A overload protection switch with a reverse restart switching structure that has a seesaw lampshade provided with a protruding block which extending downward from the outside of the seesaw lampshade to ensure that the seesaw lampshade and the moving rod are accurately positioned in the ON and OFF positions in the housing to form a three-stage switching type with bidirectional positioning and forms an overload protection switch that can continuously maintain sufficient insulation distance and does not reduce the insulation distance due to fatigue decay of the binary alloy conductive plate.

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer including an upper surface; an exposed region formed in the semiconductor stack to expose the upper surface; a first protective layer covering the exposed region and a portion of the second semiconductor layer, wherein the first protective layer includes a first part with a first thickness formed on the upper surface and a second part with a second thickness formed on the second semiconductor layer, the first thickness is smaller than the second thickness; a first reflective structure formed on the second semiconductor layer and including one or multiple openings; and a second reflective structure formed on the first reflective structure and electrically connected to the second semiconductor layer through the one or multiple openings.

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,

Abstract: A method of manufacturing a semiconductor structure includes: forming a first oxide layer over a landing pad layer; forming a middle patterned dielectric layer over the first oxide layer; sequentially forming a second oxide layer and a top dielectric layer over the middle patterned dielectric layer; forming a trench through the top dielectric layer, the second oxide layer and the first oxide layer; conformally forming a bottom conductive layer in the trench; removing a portion of the top dielectric layer adjacent to the trench to expose a portion of the second oxide layer beneath the portion of the top dielectric layer; and performing an etching process to remove the second oxide layer and the first oxide layer. A semiconductor structure is also provided.

Abstract: Terahertz (THz) radiation detectors based on the rectification of a THz signal via the non-linear Hall effect in thin films of non-centrosymmetric layered topological semimetals are provided. The THz detectors, which enable sensitive, broadband, and fast room-temperature terahertz radiation detection, can be fabricated with electrostatic gates to tune the terahertz rectification.