Abstract: The present invention relates to a memory cell structure of a flash memory and a method for fabricating the same and, more particularly, to a flash memory having annular floating gates. The present invention uses the capacitance coupling between the source and the floating gate to form a channel in the substrate under the floating gate. Hot electrons are injected into the floating gate or released from the floating gate to the control gate through inerpoly dieletric by injection point on the top of floating gate In the proposed memory cell, a floating gate is etched to form an annular shape situated between a drain, a source, and two field oxides. An interpoly dielectric and a control gate are stacked in turn on the floating gate and on the surface of the substrate not covered by the floating gate through means of self-alignment. An injection point not covered by the SiN film of the interpoly dielectric is formed on the top of the floating gate.

Abstract: Disclosed is a MEMS sensor including a sense element and a single anchor that supports the sense element arranged in a central hub-like fashion that reduces the effects of thermal stress. Usually, two or more anchors are required to suitably constrain the sense element's motion. The anchor disclosed herein, however, supports the sense element with connection elements having a connection geometry that substantially limits the motion of the sense element to a single-degree-of-freedom. The connection elements may include, for example, converging flexures, an extender bar, or both.

Abstract: A piezoelectric lighter incorporates with a safety arrangement which includes is movably mounted on a casing in a vertical movable manner wherein a guiding slot is provided on top of the casing to communicate with an exterior thereof. A locking member includes a locking arm disposed in the ignition cavity and an operation button slidably mounted on an ignition button. A resilient element is adapted for applying an urging pressure against the locking arm so as to normally retain the locking arm in a locking position. In which, in the locking position, the locking arm blocks up the ignition button from ignition. In order to ignite the piezoelectric lighter, a user's thumb must operate the operation button for moving the locking arm to an unlocking position. Then, the user is able to push the ignition button downwardly to ignite the piezoelectric lighter.

Abstract: In a traditional ROM semiconductor process, ROM codes are performed by ion implantation. Due to the limitations of ion implantation energy and threshold control, the implantation for program codes must be performed before forming an inter-layer oxide layer. Therefore, the required delivery time of the process becomes longer. The invention provide a method of manufacturing ROMs that can shorten delivery time by using only one mask to simultaneously form program codes and contact windows.

Abstract: Disclosed is a MEMS sensor including a sense element and a single anchor that supports the sense element arranged in a central hub-like fashion that reduces the effects of thermal stress. Usually, two or more anchors are required to suitably constrain the sense element's motion. The anchor disclosed herein, however, supports the sense element with connection elements having a connection geometry that substantially limits the motion of the sense element to a single-degree-of-freedom. The connection elements may include, for example, converging flexures, an extender bar, or both.

Abstract: An integrated circuit device includes a semiconductor substrate, an NMOS, a PMOS contiguous with the NMOS, and a composite pnp bipolar junction transistor contiguous with the NMOS. The composite pnp bipolar junction transistor includes a lateral npn bipolar junction transistor having a first current gain, and a lateral pnp bipolar junction transistor having a second current gain, wherein the current gain of the composite pnp bipolar junction transistor equals the first current gain multiplied by the second current gain.

Abstract: An optical switching system that switches the path of an optical signal by moving a microstructure onto which a light-guiding structure is mounted. The microstructure is formed by a MEMs and semiconductor process to be integral to the substrate. The light-guiding structure may include waveguides. The microstructure moves from one position to another position (e.g., laterally, vertically, rotationally) such that incoming optical signals align over a small air gap to different optical paths, depending on the position of the movable microstructure. As a result, the optical signal propagate along different optical paths (e.g., straight pass through or cross over) depending on the position of the movable microstructure. The optical paths have a large radii of curvature so as to change the direction of the optical signal gradually, thereby reducing insertion losses.

Abstract: An integrated circuit device includes a semiconductor substrate, an NMOS, a PMOS contiguous with the NMOS, and a composite pnp bipolar junction transistor contiguous with the NMOS. The composite pnp bipolar junction transistor includes a lateral npn bipolar junction transistor having a first current gain, and a lateral pnp bipolar junction transistor having a second current gain, wherein the current gain of the composite pnp bipolar junction transistor equals the first current gain multiplied by the second current gain.

Abstract: Numerous novel structures and methods are presented for their ability to correct angular and offset alignment errors caused by thermal distortion of a device formed out of dissimilar materials, such as a movable platform and waveguide coupled to a fixed platform and another waveguide. A flexure connected between two platforms corrects offset alignment errors along the centerline axis of the flexure. Thermal distortion is corrected also by varying the relative size of the two platforms and the addition of slots and/or extraneous waveguides. A waveguide may be sandwiched between two matching materials, with or without an extra thermal compensation layer portion. A method uses simple processes to build a substrate with matching waveguides on each side of the substrate. Another simple method creates a suspended structure by using simple semiconductor processes.

Abstract: This improved method and apparatus for switching optical signals uses a rotatable optically transmissive microstructure to change the optical paths of optical signals. The rotatable optically transmissive microstructure includes structures such as waveguides and waveguide networks which transmit optical signals. MEMS and micromachining technology are used to build an optical switch with a microstructure that rotates from one position to another position (e.g., laterally, vertically, rotationally) such that incoming optical signals align over a small air gap with different waveguides, or with different inputs to the waveguides, depending on the position of the microstructure. As a result, the optical signals travel different optical paths (e.g., straight pass-through or cross over) depending on the position of the microstructure.

Abstract: An improved device, which may act as a variable attenuator, changes the optical intensity of an optical signal by moving a platform onto which a light transmissive structure such as a waveguide is disposed. The light transmissive structure is positioned and aligned to receive an optical signal and positioned and aligned to transmit the optical signal. By moving the light transmissive structure into a position of reduced alignment with an input source, the light transmissive structure may receive less or none of the optical signal, thereby attenuating it. Alternatively, by moving the light transmissive structure into a position of reduced alignment with an output structure, the light transmissive structure may transmit less or none of the optical signal, thereby attenuating its transmission.

Abstract: The present invention relates to a memory cell structure of a flash memory and a method for fabricating the same and, more particularly, to a flash memory having circumventing floating gates and a method for fabricating the same. In the proposed memory cell, a floating gate and a tunneling oxide are etched to form an annular shape situated between a drain, a source, and two field oxides. An interpoly dielectric and a control gate cover in turn on the floating gate and on the surface of the substrate not covered by the floating gate by means of self-alignment. The present invention can not only achieve self-alignment to form the control gate and apply to high-integration memory cells with small areas, but also can effectively increase the high capacitance coupling ratio thereof to enhance the tunneling effect of hot electrons.

Abstract: The present invention relates to a memory cell structure of a flash memory and a method for fabricating the same and, more particularly, to a flash memory having annular floating gates. The present invention uses the capacitance coupling between the source and the floating gate to form a channel in the substrate under the floating gate. Hot electrons are injected into the floating gate or released from the floating gate to the control gate through inerpoly dieletric by injection point on the top of floating gate In the proposed memory cell, a floating gate is etched to form an annular shape situated between a drain, a source, and two field oxides. An interpoly dielectric and a control gate are stacked in turn on the floating gate and on the surface of the substrate not covered by the floating gate through means of self-alignment. An injection point not covered by the SiN film of the interpoly dielectric is formed on the top of the floating gate.

Abstract: An optical switching element has a movable optically transmissive microstructure to change the optical paths of the optical signals. The movable microstructure is “optically transmissive” because it includes structures such as waveguides and waveguide networks which transmit optical signals. The apparatus uses MEMS and micromachining technology to build an optical switch having an optically transmissive microstructure which moves from one position to another position in a direction (e.g., laterally, vertically, rotationally) such that incoming optical signals align over a small air gap with different waveguides, or with different inputs to the waveguides, depending on the position of the movable microstructure. As a result, the optical signals travel different optical paths (e.g., straight pass through or cross over) depending on the position of the movable microstructure.

Abstract: An integrated circuit device includes a semiconductor substrate, an NMOS, a PMOS contiguous with the NMOS, and a composite pnp bipolar junction transistor contiguous with the NMOS. The composite pnp bipolar junction transistor includes a lateral npn bipolar junction transistor having a first current gain, and a lateral pnp bipolar junction transistor having a second current gain, wherein the current gain of the composite pnp bipolar junction transistor equals the first current gain multiplied by the second current gain.

Abstract: An optical switching system that switches optical signals in three dimensions by moving an optically transmissive microstructure. The movable microstructure is “optically transmissive” because it includes structures such as waveguides and waveguide networks. The apparatus uses MEMS and micro-machining technology to build an optical switch having an optically transmissive microstructure which moves from one position to another position in a direction (e.g., laterally, vertically, rotationally) such that incoming optical signals align over a small air gap with different waveguides, or with different inputs to the waveguides, depending on the position of the movable microstructure. As a result, the optical signals travel different optical paths (e.g., straight pass through or cross over) depending on the position of the movable microstructure. By combining optical switches in both the vertical and horizontal directions, the resulting optical switching system handles switching in three dimensions.

Abstract: The present invention provide a method for reducing the sheet resistance of the buried layer serving as the bit line or an interconnect of a semiconductor device. The method includes steps of providing the silicon substrate, doping the silicon substrate for forming an extrinsic silicon region, and forming a silicide layer on the extrinsic silicon region for obtaining a low-resistance buried layer.

Abstract: A speed wrench includes an open end having a through portion connected to a shank of the wrench and a first jaw and a second jaw respectively extend from the throat portion. The first jaw has a first flat surface defined in an inside thereof and the second jaw has a second flat surface defined in an inside thereof. A throat recess is defined in the throat portion ad a first recess is defined in the inside of the first jaw, and a second recess is defined in the inside of the second jaw. An end of a periphery defining the second recess is connected to the second flat surface and a 60-degree angle recess is connected between the other end of the periphery of the second recess and the throat recess. A first pushing side is connected between the first flat surface and an end of a periphery defining the first recess. A second pushing side is connected between an end of a periphery defining the throat recess and the other end of the periphery defining the first recess.