Abstract: A 1×N or N×1 optical switch based on a plurality of movable MEMS-created platforms, each carrying a light guiding structure such as a waveguide, where the position of the platforms determines which optical path is connected through the optical switch. The MEMS-created platforms are formed integral with the substrate of the optical switch. The waveguides residing on the movable platforms gradually change the direction of the optical signal in order to minimize losses. The movable platforms can move linearly or rotationally, for example. Also described is a method for fabricating such an optical switch and its components by etching from the bottom of the substrate and through the oxide.

Abstract: Numerous novel structures and methods are presented for their ability to correct angular and offset alignment errors caused by thermal distortion of a device formed out of dissimilar materials, such as a movable platform and waveguide coupled to a fixed platform and another waveguide. A flexure connected between two platforms corrects offset alignment errors along the centerline axis of the flexure. Thermal distortion is corrected also by varying the relative size of the two platforms and the addition of slots and/or extraneous waveguides. A waveguide may be sandwiched between two matching materials, with or without an extra thermal compensation layer portion. A method uses simple processes to build a substrate with matching waveguides on each side of the substrate. Another simple method creates a suspended structure by using simple semiconductor processes.

Abstract: The present invention generally relates to provide a fabrication method for forming a flash memory device provided with an adjustable sharp end structure of the floating gate. While the present invention utilizes the dielectric spacer to form the L-shaped floating gate provided with a sharp end structure, the present invention adjust the thickness of the polysilicon layer and the dielectric layer covering on the polysilicon layer surface to adjust the position of the dielectric spacer so as to change the position of the sharp end structure of the L-shaped floating gate and to enhance the ability of erasing control of the flash memory and to simultaneously form a stable and easily controlled channel length and the sharp end structure for point discharging.

Abstract: An optical switching element has a movable optically transmissive microstructure to change the optical paths of the optical signals. The movable microstructure is “optically transmissive” because it includes structures such as waveguides and waveguide networks which transmit optical signals. The apparatus uses MEMS and micromachining technology to build an optical switch having an optically transmissive microstructure which moves from one position to another position in a direction (e.g., laterally, vertically, rotationally) such that incoming optical signals align over a small air gap with different waveguides, or with different inputs to the waveguides, depending on the position of the movable microstructure. As a result, the optical signals travel different optical paths (e.g., straight pass through or cross over) depending on the position of the movable microstructure.

Abstract: The present invention generally relates to provide a fabrication method of a flash memory with L-shaped floating gate. The present invention utilizes a dielectric spacer on a surface of a semiconductor substrate to form a L-shaped poly spacer, which is so called the L-shaped floating gate. The respective inside portion of L-shaped floating gate is gibbous and to form a tip structure. Then, an isolating dielectric layer and a control gate are formed thereon. The control gate is covering the gibbous tip structure of the L-shaped floating gate to complete a flash memory device. The present invention is provided with a channel length, which is stably and easily controlled, and a tip structure for point discharging. Hence, the present invention can enhance the isolating effect between the control gate and the floating gate to achieve the purpose of repeating control the fabrication of the semiconductor devices.

Abstract: The present invention generally relates to a method for fabricating a post-process one-time programmable (OTP) read only memory cell (ROM cell). The OTP ROM cell has two oxide layers positioned on a semiconductor substrate and a plurality of semiconductor-implanted regions are implanted in the semiconductor substrate. Oxide layers are respectively to those semiconductor-implanted regions of the semiconductor substrate and having a window-type isolating channel region for each. Finally, a polysilicon layer is positioned on the thicker oxide layer as a gate electrode region of the OTP ROM cell. Hence, the polysilicon layer can be applied a voltage to penetrate the thinker oxide layer of the window-type isolating channel region to form a P-N junction between the semiconductor-implanted regions and the polysilicon layer and then the ROM cell is programmed.

Abstract: An optical switching system that switches the path of an optical signal by moving a microstructure onto which a light-guiding structure is mounted. The microstructure is formed by a MEMs and semiconductor process to be integral to the substrate. The light-guiding structure may include waveguides. The microstructure moves from one position to another position (e.g., laterally, vertically, rotationally) such that incoming optical signals align over a small air gap to different optical paths, depending on the position of the movable microstructure. As a result, the optical signal propagate along different optical paths (e.g., straight pass through or cross over) depending on the position of the movable microstructure. The optical paths have a large radii of curvature so as to change the direction of the optical signal gradually, thereby reducing insertion losses.

Abstract: This improved method and apparatus for switching optical signals uses a rotatable optically transmissive microstructure to change the optical paths of optical signals. The rotatable optically transmissive microstructure includes structures such as waveguides and waveguide networks which transmit optical signals. MEMS and micro-machining technology are used to build an optical switch with a microstructure that rotates from one position to another position (e.g., laterally, vertically, rotationally) such that incoming optical signals align over a small air gap with different waveguides, or with different inputs to the waveguides, depending on the position of the microstructure. As a result, the optical signals travel different optical paths (e.g., straight pass-through or cross over) depending on the position of the microstructure.

Abstract: An optical switching element has a movable optically transmissive microstructure to change the optical paths of the optical signals. The movable microstructure is “optically transmissive” because it includes structures such as waveguides and waveguide networks which transmit optical signals. The apparatus uses MEMS and micromachining technology to build an optical switch having an optically transmissive microstructure which moves from one position to another position in a direction (e.g., laterally, vertically, rotationally) such that incoming optical signals align over a small air gap with different waveguides, or with different inputs to the waveguides, depending on the position of the movable microstructure. As a result, the optical signals travel different optical paths (e.g., straight pass through or cross over) depending on the position of the movable microstructure.

Abstract: The structure of the FLASH device includes a first dielectric layer formed on a substrate. A floating gate with spacer profile formed on the first dielectric layer. A dielectric spacer is formed on the floating gate for isolation. A second dielectric layer is formed along the approximately vertical surface of the floating gate and the dielectric spacer and a lateral portion of the second dielectric layer laterally extends over the substrate adjacent the floating gate. A control gate is formed on the lateral portion of the second dielectric layer that laterally extends over the substrate. The control gate is formed on the lateral portion of the second dielectric layer.

Abstract: The structure of the FLASH device includes a first dielectric layer formed on a substrate. A floating gate with spacer profile formed on the first dielectric layer. A dielectric spacer is formed on the floating gate for isolation. A second dielectric layer is formed along the approximately vertical surface of the floating gate and the dielectric spacer and a lateral portion of the second dielectric layer laterally extends over the substrate adjacent the floating gate. A control gate is formed on the lateral portion of the second dielectric layer that laterally extends over the substrate. The control gate is formed on the lateral portion of the second dielectric layer.

Abstract: An optical switching system that switches optical signals in three dimensions by moving an optically transmissive microstructure. The movable microstructure is “optically transmissive” because it includes structures such as waveguides and waveguide networks. The apparatus uses MEMS and micro-machining technology to build an optical switch having an optically transmissive microstructure which moves from one position to another position in a direction (e.g., laterally, vertically, rotationally) such that incoming optical signals align over a small air gap with different waveguides, or with different inputs to the waveguides, depending on the position of the movable microstructure. As a result, the optical signals travel different optical paths (e.g., straight pass through or cross over) depending on the position of the movable microstructure. By combining optical switches in both the vertical and horizontal directions, the resulting optical switching system handles switching in three dimensions.

Abstract: An optical switching system that switches the path of an optical signal by moving a microstructure onto which a light-guiding structure is mounted. The microstructure is formed by a MEMs and semiconductor process to be integral to the substrate. The light-guiding structure may include waveguides. The microstructure moves from one position to another position (e.g., laterally, vertically, rotationally) such that incoming optical signals align over a small air gap to different optical paths, depending on the position of the movable microstructure. As a result, the optical signal propagate along different optical paths (e.g., straight pass through or cross over) depending on the position of the movable microstructure. The optical paths have a large radii of curvature so as to change the direction of the optical signal gradually, thereby reducing insertion losses.

Abstract: A piezoelectric lighter incorporates with a safety arrangement which includes is movably mounted on a casing in a vertical movable manner wherein a guiding slot is provided on top of the casing to communicate with an exterior thereof. A locking member includes a locking arm disposed in the ignition cavity and an operation button slidably mounted on an ignition button. A resilient element is adapted for applying an urging pressure against the locking arm so as to normally retain the locking arm in a locking position. In which, in the locking position, the locking arm blocks up the ignition button from ignition. In order to ignite the piezoelectric lighter, a user's thumb must operate the operation button for moving the locking arm to an unlocking position. Then, the user is able to push the ignition button downwardly to ignite the piezoelectric lighter.

Abstract: The present invention provides a fabrication method of devices like flash memory cells, which is used to fabricate a poly spacer as a floating gate. In the present invention, an oxide, a predefined and patterned first dielectric, a first poly silicon, and a second dielectric are formed in order on the surface of a semiconductor substrate. Next, anisotropic etch is performed to the second dielectric to form dielectric spacer around projective sides of the first poly silicon. The first poly silicon is then etched with the dielectric spacer as a mask. Subsequently, the first dielectric is removed. A poly spacer is thus completed. The poly spacer is used as a floating gate to complete a flash memory. A channel length of stability and easy control and tips useful for point discharge can thus be obtained so that repetitive control of fabrication of semiconductor devices can be achieved.

Abstract: The present invention provides a fabrication method of devices like flash memory cells, which is used to fabricate a poly spacer as a floating gate. In the present invention, an oxide, a predefined and patterned first dielectric, a first poly silicon, and a second dielectric are formed in order on the surface of a semiconductor substrate. Next, anisotropic etch is performed to the second dielectric to form dielectric spacer around projective sides of the first poly silicon. The first poly silicon is then etched with the dielectric spacer as a mask. Subsequently, the first dielectric is removed. A poly spacer is thus completed. The poly spacer is used as a floating gate to complete a flash memory. A channel length of stability and easy control and tips useful for point discharge can thus be obtained so that repetitive control of fabrication of semiconductor devices can be achieved.

Abstract: The present invention provides a method of making an ID code of ROM and a structure thereof, wherein an ROM code is implanted into channel regions between a plurality of bit lines and the region covered by a plurality of word lines on a semiconductor substrate. A field oxide for marking is situated at a predetermined position of the semiconductor substrate. A mark layer is attached on the surface of the field oxide using material different from oxide. The mark layer has a set of mark numbers to form an ID code structure. The formed ID code of the present invention can be clearly identified.

Abstract: A three-axis micro-gyro structure having first and second micro-gyro devices that measure angular velocity around first and second rate axes extending in a plane of the micro-gyro structure and a third micro-gyro that measures angular velocity around a third rate axis perpendicular to the plane of the micro-gyro structure.

Abstract: The present invention provides a method of making an ID code of ROM and a structure thereof, wherein an ROM code is implanted into channel regions between a plurality of bit lines and the region covered by a plurality of word lines on a semiconductor substrate. A field oxide for marking is situated at a predetermined position of the semiconductor substrate. A mark layer is attached on the surface of the field oxide using material different from oxide. The mark layer has a set of mark numbers to form an ID code structure. The formed ID code of the present invention can be clearly identified.

Abstract: A piezoelectric lighter incorporates with a safety arrangement which includes is movably mounted on a casing in a vertical movable manner wherein a guiding slot is provided on top of the casing to communicate with an exterior thereof. A locking member includes a locking arm disposed in the ignition cavity and an operation button slidably mounted on an ignition button. A resilient element is adapted for applying an urging pressure against the locking arm so as to normally retain the locking arm in a locking position. In which, in the locking position, the locking arm blocks up the ignition button from ignition. In order to ignite the piezoelectric lighter, a user's thumb must operate the operation button for moving the locking arm to an unlocking position. Then, the user is able to push the ignition button downwardly to ignite the piezoelectric lighter.