Abstract: The present disclosure describes combination therapies comprising an antagonist of Programmed Death 1 receptor (PD-1) and a Toll-like receptor 9 (TLR9) agonist that is a CpG-C type oligonucleotide, and the use of the combination therapies for the treatment of cancer.

Abstract: Embodiments of the present invention provide a communication method and a communications apparatus. The method includes: receiving configuration information of at least one frequency resource group, and receiving, by using at least one beam, a downlink signal on a corresponding frequency resource in the at least one frequency resource group, wherein each frequency resource group comprises at least two frequency resources, each frequency resource corresponds to at least one beam, and the configuration information comprises an identifier of each frequency resource group and an identifier of each frequency resource; and when it is detected based on the downlink signal that a beam associated with a first frequency resource in the frequency resource group fails, sending a beam recovery request on a second frequency resource in the frequency resource group. Correspondingly, a corresponding apparatus is further disclosed.

Abstract: A semiconductor package including one or more dam structures and the method of forming are provided. A semiconductor package may include an interposer, a semiconductor die bonded to a first side of the interposer, an encapsulant on the first side of the interposer encircling the semiconductor die, a substrate bonded to the a second side of the interposer, an underfill between the interposer and the substrate, and one or more of dam structures on the substrate. The one or more dam structures may be disposed adjacent respective corners of the interposer and may be in direct contact with the underfill. The coefficient of thermal expansion of the one or more of dam structures may be smaller than the coefficient of thermal expansion of the underfill.

Abstract: A phase-change memory device and a method for fabricating the same are provided. The phase-change memory device comprises a first electrode, a stack and a multi-layered spacer. The first electrode is disposed on and electrically connected to an interconnect wiring of the interconnect structure. The stack is disposed on the first electrode and comprises a phase-change layer disposed on the first electrode and a second electrode disposed on the phase-change layer. The multi-layered spacer covers the stack. A first portion of the multi-layered spacer covers a top surface of the stack, and a second portion of the multi-layered spacer covers a sidewall of the stack.

Abstract: A system may automatically conduct hygiene cycles for a confined space such an interior space of a box suitable for storing and/or carrying packaged food. The system may include a hygiene device that can be attached to the box to conduct the hygiene cycles. The system may also automatically collect information related to the hygiene cycles and transmit the collected information to a network.

Abstract: A laser processing system includes a laser source, an optical splitting unit, a frequency conversion unit and at least one optical mixer. The optical splitting unit is provided to divide light emitted by the laser source into a first light and a second light, and the first light and the second light have the same wavelength range. The frequency conversion unit is provided to convert the second light into a working light. The working light includes a frequency converted light, and the frequency converted light and the second light have different wavelength ranges. The optical mixer is provided to mix the first light with the frequency converted light.

Abstract: The present invention provides a method of preparing a recycled cementitious material by a phosphogypsum-assisted carbon sequestration pretreatment process. The method includes: (1) placing 100 mass parts of phosphogypsum, 1 to 2 mass parts of grinding aid, 10 to 20 mass parts of sodium-containing alkali component, 150 to 300 mass parts of zirconia balls, and 150 to 300 mass parts of water into a wet grinding tank for wet grinding. After 10 min to 30 min of wet grinding, introducing CO2 at a flow rate of 1.5 to 2.2 mass parts/min to keep a temperature of a wet grinding slurry below 40° C. When the wet grinding slurry reaches pH=10, ending the wet grinding and sieving out a wet grinding slurry; (2) mixing the wet grinding slurry with 700 to 1000 mass parts of slag and 100 to 350 mass parts of water to obtain a recycled cementitious material.

Abstract: A method includes depositing a high-k gate dielectric layer over and along sidewalls of a semiconductor fin. The method further includes depositing an n-type work function metal layer over the high-k gate dielectric layer and performing a passivation treatment on the high-k gate dielectric layer through the n-type work function metal layer. The passivation treatment comprises a remote plasma process. The method further includes depositing a fill metal over the n-type work function metal layer to form a metal gate stack over the high-k gate dielectric layer. The metal gate stack comprising the n-type work function metal layer and the fill metal.

Abstract: Methods, systems, and devices for one or more clock domain crossing queues are described. A queue can receive, from a first clock domain, a first command to store data in the queue. The queue can store the data at a first location indicated by a first pointer. The queue can receive, from the first clock domain, a second command to cause the second clock domain to retrieve the data from the queue. The queue can generate, based on receiving the second command, a third command synchronized with a clock of the second clock domain and to cause the second clock domain to retrieve the data. The queue can retrieve the data from the first location in the queue indicated by a second pointer associated with retrieving data based at least in part on generating the third command. The queue can transmit, to the second clock domain, the data.

Abstract: Techniques for managing a file system involve: receiving an event published by the file system, the event being associated with an operation on an object in the file system; determining a value of a counter corresponding to the event based on execution information of the operation; determining a target action corresponding to the value of the counter based on a trigger strategy associated with the counter, the trigger strategy defining at least one action that can be triggered by the counter; and generating an indication for causing the file system to execute the target action. Accordingly, file system management in finer granularity can be provided.

Abstract: A display device includes a screen, a screen stand and a fixing module. The screen stand is pivotally connected to the screen. The fixing module is connected to the screen stand and configured to clamp a first surface and a second surface of a board and includes a connecting element, a first abutting element and a second abutting element. The first abutting element is fixed to the connecting element and configured to abut against the first surface of the board. The second abutting element is pivotally connected to the connecting element and includes an abutting end configured to abut against the second surface of the board.

Abstract: A data bus is determined to be in a write mode. Whether a number of memory queues that identify at least one write operation satisfies a threshold criterion is determined. The memory queues include identifiers of one or more write operations and identifiers of one or more read operations. Responsive to determining that the number of memory queues satisfies the threshold criterion, a write operation from the memory queues is transmitted over the data bus.

Abstract: A processing device in a memory sub-system maintains a mapping data structure to track data movements from a plurality of data management units associated with a media management operation on a memory device. The processing device further uses a first indicator and a second indicator of a plurality of indicators to indicate which data of data management units of a source group of data management units have been copied to a destination group of data management units during the media management operation. Data located in data management units preceding the first indicator have been copied to data management units of the destination group of data management units. Data located in data management units associated with the first indicator and the second indicator or between the first indicator and the second indicator are either copied to data management units of the destination group of data management units or remain located in data management units of the source group of data management units.

Abstract: A semiconductor device includes a semiconductor substrate and an interconnection structure. The interconnection structure is disposed over the semiconductor substrate. The interconnection structure includes first conductive lines, second conductive lines, and ovonic threshold switches. The first conductive lines extend parallel to each other in a first direction. The second conductive lines are stacked over the first conductive lines and extend parallel to each other in a second direction perpendicular to the first direction. The ovonic threshold switches are disposed between the first conductive lines and the second conductive lines. The ovonic threshold switches include a ternary GeCTe material. The ternary GeCTe material consists substantially of carbon, germanium, and tellurium. In the ternary GeCTe material, a content of carbon is in a range from 10 to 30 atomic percent and a content of germanium is in a range from 10 to 65 atomic percent.

Abstract: An input/output port circuit includes an input/output pad, a transistor, and a conductive routing wire. The transistor has a first connection terminal and a second connection terminal. The first connection terminal of the transistor is electrically connected to the input/output pad through a conductive connection wire, and the second connection terminal is electrically connected to another transistor. The conductive routing wire is electrically connected to the first terminal of the transistor. The conductive routing wire is configured to provide a serial resistance, thereby forcing a surge current to flow toward the another transistor when the surge current is inputted in the input/output circuit through the input/output pad.

Abstract: A sequencer component residing in a first package receives data from a controller residing in a second package that is different than the first package including the sequencer component. The sequencer component performs an error correction operation on the data received from the controller. The error correction operation encodes the data with additional data to generate a code word. The sequencer component stores the code word at a memory device.

Abstract: Disclosed herein is a method for producing a land grid array (LGA) socket connector assembly and the resultant assembly. The method comprises providing a carrier having a first carrier thickness with an array of vias, each having a first diameter, providing pockets around top surfaces of the vias, each having a second diameter and creating a portion of the pockets having a second carrier thickness that is less than the first carrier thickness, providing socket contact springs, each comprising a hole support structure that supports the socket contact spring within the via, and a contact beam configured to contact a conductor of an integrated circuit to be placed within the socket connector assembly, wherein a portion of carrier having a first carrier thickness is configured to prevent the contact beam from inelastically deforming when bent under load. Alternately, a contact feature may be used to prevent the inelastic deformation.

Abstract: Methods, systems, and devices for performing an access operation on a memory cell, incrementing a value of a first counter based on performing the access operation on the memory cell, determining that the incremented value of the first counter satisfies a threshold, incrementing a value of a second counter based on determining that the incremented value of the first counter satisfies the threshold, and performing a maintenance operation on the memory cell based on determining that the incremented value of the first counter satisfies the threshold are described.

Abstract: Provided is polarization control device based on silicon waveguide and phase change material, including polarization rotation beam splitter, optical beam splitter component, phase shifter component, and polarization rotation beam combiner; input end of polarization rotation beam splitter is connected to input optical fiber; input end of first optical beam splitter is connected to output end of polarization rotation beam splitter, first output end of first optical beam splitter is connected to first phase shifter, and second output end thereof is connected to second phase shifter; input end of second optical beam splitter is connected to first phase shifter and second phase shifter, respectively, first output end of second optical beam splitter is connected to third phase shifter, and second output end of second optical beam splitter is connected to fourth phase shifter; and input end of polarization rotation beam combiner is connected to third phase shifter and fourth phase shifter, respectively.