Abstract: An integrated circuit device and method for manufacturing the integrated circuit device are disclosed. In an example, the method includes forming a gate structure over a substrate; forming a doped region in the substrate; performing a first etching process to remove the doped region and form a trench in the substrate; and performing a second etching process that modifies the trench by removing portions of the substrate.

Abstract: Embodiments described herein generally relate to methods of forming sub-10 nm node FinFETs. Various processing steps may be performed on a substrate to provide a trench over which a dielectric layer is conformally deposited. The dielectric layer is subsequently etched within the trench to expose the underlying substrate and a semiconductive material is deposited in the trench to form a fin structure. The processes of forming the trench, depositing the dielectric layer, and forming the fin structure can achieve sub-10 nm node dimensions and provide increasingly smaller FinFETs.

Abstract: An embodiment integrated circuit device and a method of making the same. The embodiment method includes forming a first nitride layer over a gate stack supported by a substrate, implanting germanium ions in the first nitride layer in a direction forming an acute angle with a top surface of the substrate, etching away germanium-implanted portions of the first nitride layer to form a first asymmetric nitride spacer confined to a first side of the gate stack, the first asymmetric nitride spacer protecting a first source/drain region of the substrate from a first ion implantation, and implanting ions in a second source/drain region of the substrate on a second side of the gate stack unprotected by the first asymmetric nitride spacer to form a first source/drain.

Abstract: A system and method for placing inline services having multiple instances in a service provider network. In one implementation, a topology of the service provider network and services to be placed therein are defined, wherein a network node may include a data forwarding functionality and a control plane functionality. Using service chaining policy requirements, the number of service instances, etc. as input, services and their multiple instances are placed within the network such that an overall network metric is optimized for all subscriber data flows.

Abstract: A method for localized congestion exposure within a local loop in a cellular network that is performed by a localized congestion exposure receiver node of the local loop. The method includes receiving downlink packets destined for a downstream user device. The downlink packets have headers that indicate a level of congestion experienced by the downlink packets. The headers also indicate a level of expected downstream congestion declared by an upstream node. The method also includes forwarding the downlink packets to the downstream user device through a wireless connection. The method further includes sending packets upstream that have feedback indicative of the level of congestion experienced by the downlink packets and any congestion experienced within the localized congestion exposure receiver node.

Abstract: A method is implemented in a network element that functions as one of a plurality of controllers for one of a plurality of areas of a split architecture network. The controller provides a control plane for the area of the split architecture network where the controller is remote from a plurality of switches providing a data plane for the area of split architecture network. The controller facilitates optimized routing across the plurality of areas of the split architecture network by providing limited intra-area link cost data to other controllers of other areas of the split architecture network and to traditional routers of a network including the split architecture network. The limited intra-area link cost data provides costs of each possible shortest path traversal of the area of the controller without providing all internal link cost data.

Abstract: A method implemented to provide a virtual network to tenants requiring bandwidth in a cloud computing environment is disclosed. The method starts with receiving a request for a task at a network device, the request including a first parameter indicating VMs required, a second parameter indicating bandwidths the required VMs need, a third parameter indicating a duration of the task, and a fourth parameter indicating a deadline of the task. The network device then selects a starting time and a bandwidth allocation of the task, where the bandwidth allocation is shrank to be smaller than the second parameter indicating, and where the selection aims at minimizing a measurement of cloud resource utilization considering consumptions of both VMs and bandwidth. Then the network device allocates VMs for the request at the starting time with the bandwidth allocated at a particular location in the cloud computing environment.

Abstract: A method is implemented in a network element to generate quality of experience (QoE) metrics for hypertext transfer protocol (HTTP) sessions over a network between a user device and an HTTP server. The QoE metrics are based on detecting premature termination of a download process that indicate low QoE. This QoE metric data can then be utilized by network administrators or service providers to adjust network characteristics to improve the QoE or to offer changes in services to a customer that would improve the QoE.

Abstract: The present invention provides a bacterial expression system for expressing a nucleic acid comprising: (a) DNA encoding a group 5 RNA polymerase sigma factor; and (b) an expression cassette comprising a promoter recognised by the group 5 RNA polymerase sigma factor operably linked to a heterologous nucleic acid; wherein (a) and (b) are located on the same expression vector, separate expression vectors or are integrated into the bacterial host genome.

Abstract: Disclosed is an improved double patterning method for forming openings (e.g., vias or trenches) or mesas on a substrate. This method avoids the wafer topography effects seen in prior art double patterning techniques by ensuring that the substrate itself is only subjected to a single etch process. Specifically, in the method, a first mask layer is formed on the substrate and processed such that it has a doped region and multiple undoped regions within the doped region. Then, either the undoped regions or the doped region can be selectively removed in order to form a mask pattern above the substrate. Once the mask pattern is formed, an etch process can be performed to transfer the mask pattern into the substrate. Depending upon whether the undoped regions are removed or the doped region is removed, the mask pattern will form openings (e.g., vias or trenches) or mesas, respectively, on the substrate.

Abstract: The present invention now provides a conditional vector comprising DNA encoding for: (i) an inducible expression cassette comprising an inducible promoter operably linked to a plasmid replication region; and (ii) a selectable marker.

Abstract: A method implemented in a Software Defined Networking (SDN) network for flow table lookup parallelization is disclosed. The SDN network contains at least a SDN controller and at least a forwarding element and the SDN network utilizes a plurality of flow tables to perform lookup for forwarding traffic. The method starts with determining dependency of flow tables within the forwarding element using a set of dependency determination rules. A dependency graph is then constructed based on determined dependency of flow tables. A dependency degree count for each flow table within the forwarding element is determined based on the dependency graph. Based on the dependency degree count determination for each flow table, a plurality of parallel lookup groups (PLGs) for the forwarding element is formed, where each parallel lookup group contains one or more flow tables having a same dependency degree count.

Abstract: A material can be locally etched with arbitrary changes in the direction of the etch. A ferromagnetic-material-including catalytic particle is employed to etch the material. A wet etch chemical or a plasma condition can be employed in conjunction with the ferromagnetic-material-including catalytic particle to etch a material through a catalytic reaction between the catalytic particle and the material. During a catalytic etch process, a magnetic field is applied to the ferromagnetic-material-including catalytic particle to direct the movement of the particle to any direction, which is chosen so as to form a contiguous cavity having at least two cavity portions having different directions. The direction of the magnetic field can be controlled so as to form the contiguous cavity in a preplanned pattern, and each segment of the contiguous cavity can extend along an arbitrary direction.

Abstract: A system receives, at a server, an action request from a client associated with bookmarks, where the bookmarks identify user designated documents. The system accesses bookmark records stored at the server based on the action request and acting on the bookmark records in a manner specified by the action request.

Abstract: A method of manufacturing an article comprises providing a ring for an etch reactor. Ion assisted deposition (IAD) is then performed to deposit a protective layer on at least one surface of the ring, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 ?m and an average surface roughness of less than 6 micro-inches.

Abstract: A method of manufacturing an article comprises providing a lid or nozzle for an etch reactor. Ion assisted deposition (IAD) is then performed to deposit a protective layer on at least one surface of the lid or nozzle, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 ?m and an average surface roughness of 10 micro-inches or less.

Abstract: A method implemented by a network service provider to provide a virtual network to tenants requiring bandwidth in a cloud computing environment, wherein the virtual network includes a first set of one or more virtual switches that manage a second set of one or more physical servers that host a first plurality of available virtual machines (VMs), the method comprising receiving by at least one virtual switch a bandwidth request for a second plurality of VMs, determining whether to accept the request of the second plurality of VMs by calculating an allocation range (AR) associated to the virtual switch, wherein the AR denotes at least one discontinuous VM allocation space within the virtual switch, and allocating VMs to the tenant in response to the determination of accepting the request of the second plurality of VMs.

Abstract: A circuit includes a switching module, a control module, and a driving module. The driving module is electrically coupled between the control module and the switching module for generating a driving signal. The driving module includes a normal driving unit and a fault protection unit. The normal driving unit is for turning on and off the switching module according to a first command signal from the control module. The fault protection unit is for lowering the driving signal from a driving value to a protection value according to a second command signal from the control module during a fault protection period after the control module receives a fault signal.

Abstract: Lightguides, devices incorporating lightguides, processes for making lightguides, and tools used to make lightguides are described. A lightguide includes light extractors arranged in a plurality of regions on a surface of the lightguide. The orientation of light extractors in each region is arranged to enhance uniformity and brightness across a surface of the lightguide and to provide enhanced defect hiding. The efficiency of the light extractors is controlled by the angle of a given light extractor face with respect to a light source illuminating the light guide.

Abstract: A method includes forming a gate stack to cover a middle portion of a semiconductor fin, and doping an exposed portion of the semiconductor fin with an n-type impurity to form an n-type doped region. At least a portion of the middle portion is protected by the gate stack from receiving the n-type impurity. The method further includes etching the n-type doped region using chlorine radicals to form a recess, and performing an epitaxy to re-grow a semiconductor region in the recess.