Patents by Inventor Yoichi Hori

Yoichi Hori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11830920
    Abstract: A semiconductor device includes a semiconductor part including a first semiconductor layer of a first conductivity type; a first electrode provided on a back surface of the semiconductor part; and a second electrode provided on a front surface of the semiconductor part. The second electrode includes a barrier layer and a metal layer. The barrier layer contacts the first semiconductor layer and including vanadium or a vanadium compound as a major component. The metal layer is provided on the barrier layer.
    Type: Grant
    Filed: August 19, 2021
    Date of Patent: November 28, 2023
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
    Inventors: Naofumi Hirata, Tomomi Kuraguchi, Shinichi Ueki, Yoichi Hori, Kei Tanihira
  • Patent number: 11822240
    Abstract: A resist composition that generates an acid upon exposure and whose solubility in a developing solution is changed by action of an acid, the resist composition containing a base material component whose solubility in a developing solution is changed by action of an acid, and a compound represented by General Formula (e1) in which Rd01 represents a monovalent organic group and Rd02 represents a single bond or a divalent linking group
    Type: Grant
    Filed: December 14, 2020
    Date of Patent: November 21, 2023
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Yasuhiro Yoshii, Yosuke Suzuki, Yoichi Hori, Takahiro Kojima, Mari Murata
  • Publication number: 20230299211
    Abstract: A semiconductor device includes a first electrode, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a fifth semiconductor layer, and a second electrode. The fourth semiconductor layer is located in a second region on the first semiconductor layer. The fourth semiconductor layer is separated from the second semiconductor layer with a portion of the first semiconductor layer interposed. An impurity concentration of the fourth semiconductor layer is greater than an impurity concentration of the first semiconductor layer and less than an impurity concentration of the second semiconductor layer.
    Type: Application
    Filed: August 4, 2022
    Publication date: September 21, 2023
    Inventors: Kei TANIHIRA, Yoichi HORI, Hiroshi KONO
  • Patent number: 11747726
    Abstract: A resist composition including a base component and a fluorine additive component (F), the component (F) including a copolymer having a structural unit (f1) represented by general formula (f1-1) or (f1-2), and a structural unit (f2) represented by general formula (f2-1) (in formula (f1-1) and (f2-1), R represents a hydrogen atom or the like; at least one of Raf11 and Raf12, and at least one of Raf13 and Raf14 represents a hydrocarbon group substituted with a fluorine atom, and the total number of carbon atoms is 3 or more, provided that a hydrocarbon group forming a bridge structure is excluded; and the structural unit (f2) has a specific acid dissociable group containing an aliphatic cyclic group having no bridge structure
    Type: Grant
    Filed: June 23, 2020
    Date of Patent: September 5, 2023
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Yuki Fukumura, Tatsuya Fujii, Yoichi Hori
  • Patent number: 11656549
    Abstract: A resist composition including a resin component (A1) having a structural unit (a01), a structural unit (a02) and a structural unit (a03) derived from compounds represented by general formulae (a01-1), (a02-1) and (a03-1), respectively (W01 represents a polymerizable group-containing group containing no oxygen; W02 represents a polymerizable group-containing group containing oxygen; W03 represents a polymerizable group-containing group which may contain oxygen; Wa01 and Wa02 represent an aromatic hydrocarbon group; Xa03 represents a group which forms an alicyclic hydrocarbon group together with Ya03; Ra00 represents a hydrocarbon group which may have a substituent)
    Type: Grant
    Filed: November 2, 2020
    Date of Patent: May 23, 2023
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Masahito Yahagi, Yoichi Hori
  • Patent number: 11650497
    Abstract: A resist composition which generates an acid upon exposure and whose solubility in a developing solution is changed due to an action of the acid, the resist composition including a base material component whose solubility in a developing solution is changed due to the action of an acid, an acid generator component which generates an acid upon exposure, and an organic acid which contains at least one carboxy group, in which the acid generator component contains a compound represented by formula (b1) in which R2011 to R2031 represent an aryl group, an alkyl group, or an alkenyl group. R2011 to R2031 have a total of four or more substituents containing fluorine atoms, Xn? represent an n-valent anion, and n represents an integer of 1 or greater.
    Type: Grant
    Filed: November 13, 2019
    Date of Patent: May 16, 2023
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Yasuhiro Yoshii, Yoichi Hori
  • Patent number: 11586111
    Abstract: A resist composition including a compound (D0) represented by general formula (d0) and a resin component (A1) has a structural unit (a0) in which a compound represented by general formula (a0-1) has a polymerizable group within the W1 portion converted into a main chain (in formula (d0), Rd01 represents a fluorine atom or a fluorinated alkyl group; In formula (a0-1), W1 represents a polymerizable group-containing group; Ct represents a tertiary carbon atom, and the ?-position of Ct is a carbon atom which constitutes a carbon-carbon unsaturated bond; R11 represents an aromatic hydrocarbon group; or a chain hydrocarbon group; R12 and R13 each independently represents a chain hydrocarbon group, or R12 and R13 are mutually bonded to form a cyclic group).
    Type: Grant
    Filed: December 2, 2019
    Date of Patent: February 21, 2023
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Yasuhiro Yoshii, Masahito Yahagi, Yoichi Hori, Takahiro Kojima
  • Patent number: 11508854
    Abstract: A semiconductor device includes a first electrode, a first semiconductor region connected to the first electrode and being of a first conductivity type, a second semiconductor region provided on the first semiconductor region, contacting the first semiconductor region and being of a second conductivity type, first metal layers and second metal layers provided on the second semiconductor region and contacting the second semiconductor region, a third semiconductor region provided between the first semiconductor region and the first metal layer, and a second electrode. The third semiconductor region contacts the first and second semiconductor regions and being of the first conductivity type. An impurity concentration of the third semiconductor region is greater than an impurity concentration of the first semiconductor region. The second electrode contacts the first semiconductor region, the second semiconductor region, the first metal layers, and the second metal layers.
    Type: Grant
    Filed: February 17, 2021
    Date of Patent: November 22, 2022
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventors: Kei Tanihira, Yoichi Hori
  • Patent number: 11502205
    Abstract: A semiconductor device according to an embodiment includes first and second electrode, and semiconductor layer between the first and the second electrode. The semiconductor layer has first and second plane. The semiconductor layer includes first region of first conductivity type, second region of second conductivity type between the first plane and the first region, third region of second conductivity type between the first plane and the first region and, fourth region of second conductivity type between the second and the third region, and fifth region of first conductivity type having first portion provided between the first and the fourth region. Width of the fourth region is larger than that of the second region. Distance between the second region and the first portion is smaller than distance between the second and the fourth region. And width of the first portion is smaller than that of the fourth region.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: November 15, 2022
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventors: Yoichi Hori, Masakazu Kobayashi
  • Publication number: 20220293762
    Abstract: A semiconductor device includes a semiconductor part including a first semiconductor layer of a first conductivity type; a first electrode provided on a back surface of the semiconductor part; and a second electrode provided on a front surface of the semiconductor part. The second electrode includes a barrier layer and a metal layer. The barrier layer contacts the first semiconductor layer and including vanadium or a vanadium compound as a major component. The metal layer is provided on the barrier layer.
    Type: Application
    Filed: August 19, 2021
    Publication date: September 15, 2022
    Inventors: Naofumi HIRATA, Tomomi KURAGUCHI, Shinichi UEKI, Yoichi HORI, Kei TANIHIRA
  • Patent number: 11392033
    Abstract: A resist composition including a resin component whose solubility in a developing solution is changed due to the action of the acid, in which the resin component has a constitutional unit derived from a compound represented by Formula (a0-1) and a constitutional unit containing an acid decomposable group whose polarity is increased due to the action of the acid. In the formula, W represents a polymerizable group-containing group, Ya0 represents a carbon atom, Xa0 represents a group that forms a monocyclic aliphatic hydrocarbon group together with Ya0, some or all hydrogen atoms in the monocyclic aliphatic hydrocarbon group may be substituted with substituents, and Ra00 represents an aromatic hydrocarbon group which may have a substituent.
    Type: Grant
    Filed: December 17, 2018
    Date of Patent: July 19, 2022
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Hitoshi Yamano, Takahiro Kojima, Yoichi Hori, Yasuhiro Yoshii, Masahito Yahagi
  • Patent number: 11372329
    Abstract: A resist composition including a polymeric compound having a structural unit in which a compound represented by formula (a0-1) has a polymerizable group within the W1 portion converted into a main chain, and a compound represented by formula (b1-1) in which W1 represents a polymerizable group-containing group; Ct represents a tertiary carbon atom, and the ?-position of Ct is a carbon atom which constitutes a carbon-carbon unsaturated bond; R11 represents an aromatic hydrocarbon group or a chain hydrocarbon group; R12 and R13 are mutually bonded to form a 5-membered aliphatic monocyclic group, or a condensed polycyclic hydrocarbon group containing a 5-membered aliphatic monocyclic ring; Rb11 represents a cyclic group; Rb10, Rb20 and Rb30 each independently represents a substituent; nb1 represents an integer of 0 to 4; nb2 represents an integer of 0 to 5; nb3 represents an integer of 0 to 5; and X? represents a counteranion.
    Type: Grant
    Filed: October 14, 2019
    Date of Patent: June 28, 2022
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Masahito Yahagi, Yoichi Hori, Tatsuya Fujii, Yuki Fukumura
  • Patent number: 11275306
    Abstract: A resist composition including a compound (D0) formed of an anion moiety and a cation moiety which is represented by Formula (d0), and a resin component (A1) which has a constitutional unit (a0) obtained from a compound represented by Formula (a0-1), in which a polymerizable group at a W portion is converted into a main chain, and a constitutional unit (a1) containing an acid decomposable group whose polarity is increased due to an action of an acid. In Formula (d0), Rd0 represents a substituent and n represents an integer of 2 or greater. In Formula (a0-1), Wax0 represents an (nax0+1)-valent aromatic hydrocarbon group which may have a substituent.
    Type: Grant
    Filed: November 18, 2019
    Date of Patent: March 15, 2022
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Takahiro Kojima, Yasuhiro Yoshii, Masahito Yahagi, Yoichi Hori
  • Publication number: 20210405531
    Abstract: A resist composition containing a resin component (A1) having a constitutional unit (a01) and a constitutional unit (a02) derived from compounds each represented by General Formulae (a01-1) and (a02-1), a compound (B1) represented by General Formula (b1), and a compound represented by General Formula (d1-1) or a compound represented by General Formula (d1-2), in the formulae, Ct represents a tertiary carbon atom, a carbon atom at an ?-position of Ct constitutes a carbon-carbon unsaturated bond, wa02 represents an aromatic hydrocarbon group, and Rb1 represents hydrocarbon group, where a fluorine atom is not contained
    Type: Application
    Filed: May 25, 2021
    Publication date: December 30, 2021
    Inventors: Yoichi HORI, Yosuke SUZUKI
  • Publication number: 20210376168
    Abstract: A semiconductor device includes a first electrode, a first semiconductor region connected to the first electrode and being of a first conductivity type, a second semiconductor region provided on the first semiconductor region, contacting the first semiconductor region and being of a second conductivity type, first metal layers and second metal layers provided on the second semiconductor region and contacting the second semiconductor region, a third semiconductor region provided between the first semiconductor region and the first metal layer, and a second electrode. The third semiconductor region contacts the first and second semiconductor regions and being of the first conductivity type. An impurity concentration of the third semiconductor region is greater than an impurity concentration of the first semiconductor region. The second electrode contacts the first semiconductor region, the second semiconductor region, the first metal layers, and the second metal layers.
    Type: Application
    Filed: February 17, 2021
    Publication date: December 2, 2021
    Inventors: Kei Tanihira, Yoichi Hori
  • Patent number: 11187981
    Abstract: A resist composition including a resin component whose solubility in a developing solution is changed due to an action of an acid, in which the resin composition has a constitutional unit derived from a compound containing a chain-like aliphatic acid dissociable group or a monocyclic aliphatic acid dissociable group and a constitutional unit derived from a compound containing an aromatic hydrocarbon group-containing acid dissociable group.
    Type: Grant
    Filed: December 14, 2018
    Date of Patent: November 30, 2021
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Yoichi Hori, Yasuhiro Yoshii, Masahito Yahagi, Hitoshi Yamano, Takahiro Kojima
  • Publication number: 20210305435
    Abstract: A semiconductor device according to an embodiment includes first and second electrode, and semiconductor layer between the first and the second electrode. The semiconductor layer has first and second plane. The semiconductor layer includes first region of first conductivity type, second region of second conductivity type between the first plane and the first region, third region of second conductivity type between the first plane and the first region and, fourth region of second conductivity type between the second and the third region, and fifth region of first conductivity type having first portion provided between the first and the fourth region. Width of the fourth region is larger than that of the second region. Distance between the second region and the first portion is smaller than distance between the second and the fourth region. And width of the first portion is smaller than that of the fourth region.
    Type: Application
    Filed: August 31, 2020
    Publication date: September 30, 2021
    Inventors: Yoichi HORI, Masakazu KOBAYASHI
  • Publication number: 20210200087
    Abstract: A resist composition containing a resin component exhibiting changed solubility in a developing solution under action of acid, and a compound represented by General Formula (d0), the resin component containing a polymer compound having a constitutional unit having a monocyclic alicyclic hydrocarbon group, Rd0 represents a monovalent organic group; Xd0 represents —O—, —C(?O)—, —O—C(?O)—, —C(?O)—O—, —S—, or —SO2—; Ydx0 represents a single bond or the like; Rd001 to Rd004 represents a hydrogen atom or the like; and Mm+ represents an m-valent organic cation
    Type: Application
    Filed: December 17, 2020
    Publication date: July 1, 2021
    Inventors: Yoichi HORI, Yasuhiro YOSHII, Yosuke SUZUKI, Takahiro KOJIMA, Mari MURATA
  • Publication number: 20210200086
    Abstract: A resist composition containing a compound (D0) represented by General Formula (d0) and a polymer compound having a constitutional unit (a01) containing an acid-decomposable group having a polarity which is increased by action of an acid and a constitutional unit (a02) derived from a compound represented by General Formula (a02-1), and a solid content concentration is 5% by mass or less. In General Formula (d0), Rd0 represents a monovalent organic group, Xd0 represents —O— or the like, Yd0 represents a single bond, and Mm+ represents an m-valent organic cation.
    Type: Application
    Filed: December 16, 2020
    Publication date: July 1, 2021
    Inventors: Mari MURATA, Takahiro KOJIMA, Yasuhiro YOSHII, Yosuke SUZUKI, Yoichi HORI
  • Publication number: 20210191262
    Abstract: A resist composition is provided that generates an acid upon exposure and whose solubility in a developing solution is changed by action of an acid, the resist composition containing a base material component whose solubility in a developing solution is changed by action of an acid, and a compound represented by General Formula (e1) in which Rd01 represents a monovalent organic group and Rd02 represents a single bond or a divalent linking group
    Type: Application
    Filed: December 14, 2020
    Publication date: June 24, 2021
    Inventors: Yasuhiro YOSHII, Yosuke SUZUKI, Yoichi HORI, Takahiro KOJIMA, Mari MURATA