Patents by Inventor Yoichi Hori
Yoichi Hori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240097045Abstract: A semiconductor device includes a first electrode, a first semiconductor layer of a first conductivity type located on the first electrode, a second semiconductor layer of a second conductivity type located on a portion of the first semiconductor layer, a metal layer located on the first and second semiconductor layers, a second electrode located on the metal layer, a bonding member connected to an upper surface of the second electrode, and a conductive member located between the second semiconductor layer and the metal layer. The metal layer has a Schottky junction with the first semiconductor layer. The conductive member is made of a different material from the metal layer. An area ratio of the conductive member in a region directly under the bonding member is higher than an area ratio of the conductive member in a region other than the region directly under the bonding member.Type: ApplicationFiled: February 10, 2023Publication date: March 21, 2024Inventors: Yuto ADACHI, Yoichi HORI, Makoto MIZUKAMI
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Patent number: 11934099Abstract: A resist composition containing a resin component (A1) having a constitutional unit (a01) and a constitutional unit (a02) derived from compounds each represented by General Formulae (a01-1) and (a02-1), a compound (B1) represented by General Formula (b1), and a compound represented by General Formula (d1-1) or a compound represented by General Formula (d1-2), in the formulae, Ct represents a tertiary carbon atom, a carbon atom at an ?-position of Ct constitutes a carbon-carbon unsaturated bond, Wa02 represents an aromatic hydrocarbon group, and Rb1 represents hydrocarbon group, where a fluorine atom is not containedType: GrantFiled: May 25, 2021Date of Patent: March 19, 2024Assignee: TOKYO OHKA KOGYO CO., LTD.Inventors: Yoichi Hori, Yosuke Suzuki
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Publication number: 20240088073Abstract: According to one embodiment, a semiconductor device includes a first electrode and a semiconductor layer above the first electrode in a first direction. The semiconductor layer has a first region and a second region surrounding the first region in a first plane perpendicular to the first direction. A second electrode has a first portion and a second portion that is thinner than the first portion and surrounds the first portion. The first portion and the second portion are on the first region of the semiconductor layer. A first resin is on the second region and covers the second portion and an outer periphery of the first portion of the second electrode. A second resin covers the second electrode and the first resin and is a resin material different from the first resin.Type: ApplicationFiled: March 1, 2023Publication date: March 14, 2024Inventor: Yoichi HORI
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Patent number: 11925639Abstract: Provided is a pharmaceutical composition for treating a tumor, which is used in combination therapy of lenvatinib and (6S,9aS)—N-benzyl-8-({6-[3-(4-ethylpiperazin-1-yl)azetidin-1-yl]pyridin-2-yl}methyl)-6-(2-fluoro-4-hydroxybenzyl)-4,7-dioxo-2-(prop-2-en-1-yl)hexahydro-2H-pyrazino[2,1-c][1,2,4]triazine-1(6H)-carboxamide.Type: GrantFiled: February 6, 2018Date of Patent: March 12, 2024Assignee: Eisai R&D Management Co., Ltd.Inventors: Yoichi Ozawa, Yusaku Hori, Kazuhiko Yamada, Hiroshi Kamiyama, Masahiro Matsuki
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Patent number: 11830920Abstract: A semiconductor device includes a semiconductor part including a first semiconductor layer of a first conductivity type; a first electrode provided on a back surface of the semiconductor part; and a second electrode provided on a front surface of the semiconductor part. The second electrode includes a barrier layer and a metal layer. The barrier layer contacts the first semiconductor layer and including vanadium or a vanadium compound as a major component. The metal layer is provided on the barrier layer.Type: GrantFiled: August 19, 2021Date of Patent: November 28, 2023Assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage CorporationInventors: Naofumi Hirata, Tomomi Kuraguchi, Shinichi Ueki, Yoichi Hori, Kei Tanihira
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Patent number: 11822240Abstract: A resist composition that generates an acid upon exposure and whose solubility in a developing solution is changed by action of an acid, the resist composition containing a base material component whose solubility in a developing solution is changed by action of an acid, and a compound represented by General Formula (e1) in which Rd01 represents a monovalent organic group and Rd02 represents a single bond or a divalent linking groupType: GrantFiled: December 14, 2020Date of Patent: November 21, 2023Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Yasuhiro Yoshii, Yosuke Suzuki, Yoichi Hori, Takahiro Kojima, Mari Murata
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Publication number: 20230299211Abstract: A semiconductor device includes a first electrode, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a fifth semiconductor layer, and a second electrode. The fourth semiconductor layer is located in a second region on the first semiconductor layer. The fourth semiconductor layer is separated from the second semiconductor layer with a portion of the first semiconductor layer interposed. An impurity concentration of the fourth semiconductor layer is greater than an impurity concentration of the first semiconductor layer and less than an impurity concentration of the second semiconductor layer.Type: ApplicationFiled: August 4, 2022Publication date: September 21, 2023Inventors: Kei TANIHIRA, Yoichi HORI, Hiroshi KONO
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Patent number: 11747726Abstract: A resist composition including a base component and a fluorine additive component (F), the component (F) including a copolymer having a structural unit (f1) represented by general formula (f1-1) or (f1-2), and a structural unit (f2) represented by general formula (f2-1) (in formula (f1-1) and (f2-1), R represents a hydrogen atom or the like; at least one of Raf11 and Raf12, and at least one of Raf13 and Raf14 represents a hydrocarbon group substituted with a fluorine atom, and the total number of carbon atoms is 3 or more, provided that a hydrocarbon group forming a bridge structure is excluded; and the structural unit (f2) has a specific acid dissociable group containing an aliphatic cyclic group having no bridge structureType: GrantFiled: June 23, 2020Date of Patent: September 5, 2023Assignee: TOKYO OHKA KOGYO CO., LTD.Inventors: Yuki Fukumura, Tatsuya Fujii, Yoichi Hori
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Patent number: 11656549Abstract: A resist composition including a resin component (A1) having a structural unit (a01), a structural unit (a02) and a structural unit (a03) derived from compounds represented by general formulae (a01-1), (a02-1) and (a03-1), respectively (W01 represents a polymerizable group-containing group containing no oxygen; W02 represents a polymerizable group-containing group containing oxygen; W03 represents a polymerizable group-containing group which may contain oxygen; Wa01 and Wa02 represent an aromatic hydrocarbon group; Xa03 represents a group which forms an alicyclic hydrocarbon group together with Ya03; Ra00 represents a hydrocarbon group which may have a substituent)Type: GrantFiled: November 2, 2020Date of Patent: May 23, 2023Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Masahito Yahagi, Yoichi Hori
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Patent number: 11650497Abstract: A resist composition which generates an acid upon exposure and whose solubility in a developing solution is changed due to an action of the acid, the resist composition including a base material component whose solubility in a developing solution is changed due to the action of an acid, an acid generator component which generates an acid upon exposure, and an organic acid which contains at least one carboxy group, in which the acid generator component contains a compound represented by formula (b1) in which R2011 to R2031 represent an aryl group, an alkyl group, or an alkenyl group. R2011 to R2031 have a total of four or more substituents containing fluorine atoms, Xn? represent an n-valent anion, and n represents an integer of 1 or greater.Type: GrantFiled: November 13, 2019Date of Patent: May 16, 2023Assignee: TOKYO OHKA KOGYO CO., LTD.Inventors: Yasuhiro Yoshii, Yoichi Hori
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Patent number: 11586111Abstract: A resist composition including a compound (D0) represented by general formula (d0) and a resin component (A1) has a structural unit (a0) in which a compound represented by general formula (a0-1) has a polymerizable group within the W1 portion converted into a main chain (in formula (d0), Rd01 represents a fluorine atom or a fluorinated alkyl group; In formula (a0-1), W1 represents a polymerizable group-containing group; Ct represents a tertiary carbon atom, and the ?-position of Ct is a carbon atom which constitutes a carbon-carbon unsaturated bond; R11 represents an aromatic hydrocarbon group; or a chain hydrocarbon group; R12 and R13 each independently represents a chain hydrocarbon group, or R12 and R13 are mutually bonded to form a cyclic group).Type: GrantFiled: December 2, 2019Date of Patent: February 21, 2023Assignee: TOKYO OHKA KOGYO CO., LTD.Inventors: Yasuhiro Yoshii, Masahito Yahagi, Yoichi Hori, Takahiro Kojima
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Patent number: 11508854Abstract: A semiconductor device includes a first electrode, a first semiconductor region connected to the first electrode and being of a first conductivity type, a second semiconductor region provided on the first semiconductor region, contacting the first semiconductor region and being of a second conductivity type, first metal layers and second metal layers provided on the second semiconductor region and contacting the second semiconductor region, a third semiconductor region provided between the first semiconductor region and the first metal layer, and a second electrode. The third semiconductor region contacts the first and second semiconductor regions and being of the first conductivity type. An impurity concentration of the third semiconductor region is greater than an impurity concentration of the first semiconductor region. The second electrode contacts the first semiconductor region, the second semiconductor region, the first metal layers, and the second metal layers.Type: GrantFiled: February 17, 2021Date of Patent: November 22, 2022Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Kei Tanihira, Yoichi Hori
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Patent number: 11502205Abstract: A semiconductor device according to an embodiment includes first and second electrode, and semiconductor layer between the first and the second electrode. The semiconductor layer has first and second plane. The semiconductor layer includes first region of first conductivity type, second region of second conductivity type between the first plane and the first region, third region of second conductivity type between the first plane and the first region and, fourth region of second conductivity type between the second and the third region, and fifth region of first conductivity type having first portion provided between the first and the fourth region. Width of the fourth region is larger than that of the second region. Distance between the second region and the first portion is smaller than distance between the second and the fourth region. And width of the first portion is smaller than that of the fourth region.Type: GrantFiled: August 31, 2020Date of Patent: November 15, 2022Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Yoichi Hori, Masakazu Kobayashi
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Publication number: 20220293762Abstract: A semiconductor device includes a semiconductor part including a first semiconductor layer of a first conductivity type; a first electrode provided on a back surface of the semiconductor part; and a second electrode provided on a front surface of the semiconductor part. The second electrode includes a barrier layer and a metal layer. The barrier layer contacts the first semiconductor layer and including vanadium or a vanadium compound as a major component. The metal layer is provided on the barrier layer.Type: ApplicationFiled: August 19, 2021Publication date: September 15, 2022Inventors: Naofumi HIRATA, Tomomi KURAGUCHI, Shinichi UEKI, Yoichi HORI, Kei TANIHIRA
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Patent number: 11392033Abstract: A resist composition including a resin component whose solubility in a developing solution is changed due to the action of the acid, in which the resin component has a constitutional unit derived from a compound represented by Formula (a0-1) and a constitutional unit containing an acid decomposable group whose polarity is increased due to the action of the acid. In the formula, W represents a polymerizable group-containing group, Ya0 represents a carbon atom, Xa0 represents a group that forms a monocyclic aliphatic hydrocarbon group together with Ya0, some or all hydrogen atoms in the monocyclic aliphatic hydrocarbon group may be substituted with substituents, and Ra00 represents an aromatic hydrocarbon group which may have a substituent.Type: GrantFiled: December 17, 2018Date of Patent: July 19, 2022Assignee: TOKYO OHKA KOGYO CO., LTD.Inventors: Hitoshi Yamano, Takahiro Kojima, Yoichi Hori, Yasuhiro Yoshii, Masahito Yahagi
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Patent number: 11372329Abstract: A resist composition including a polymeric compound having a structural unit in which a compound represented by formula (a0-1) has a polymerizable group within the W1 portion converted into a main chain, and a compound represented by formula (b1-1) in which W1 represents a polymerizable group-containing group; Ct represents a tertiary carbon atom, and the ?-position of Ct is a carbon atom which constitutes a carbon-carbon unsaturated bond; R11 represents an aromatic hydrocarbon group or a chain hydrocarbon group; R12 and R13 are mutually bonded to form a 5-membered aliphatic monocyclic group, or a condensed polycyclic hydrocarbon group containing a 5-membered aliphatic monocyclic ring; Rb11 represents a cyclic group; Rb10, Rb20 and Rb30 each independently represents a substituent; nb1 represents an integer of 0 to 4; nb2 represents an integer of 0 to 5; nb3 represents an integer of 0 to 5; and X? represents a counteranion.Type: GrantFiled: October 14, 2019Date of Patent: June 28, 2022Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Masahito Yahagi, Yoichi Hori, Tatsuya Fujii, Yuki Fukumura
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Patent number: 11275306Abstract: A resist composition including a compound (D0) formed of an anion moiety and a cation moiety which is represented by Formula (d0), and a resin component (A1) which has a constitutional unit (a0) obtained from a compound represented by Formula (a0-1), in which a polymerizable group at a W portion is converted into a main chain, and a constitutional unit (a1) containing an acid decomposable group whose polarity is increased due to an action of an acid. In Formula (d0), Rd0 represents a substituent and n represents an integer of 2 or greater. In Formula (a0-1), Wax0 represents an (nax0+1)-valent aromatic hydrocarbon group which may have a substituent.Type: GrantFiled: November 18, 2019Date of Patent: March 15, 2022Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Takahiro Kojima, Yasuhiro Yoshii, Masahito Yahagi, Yoichi Hori
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Publication number: 20210405531Abstract: A resist composition containing a resin component (A1) having a constitutional unit (a01) and a constitutional unit (a02) derived from compounds each represented by General Formulae (a01-1) and (a02-1), a compound (B1) represented by General Formula (b1), and a compound represented by General Formula (d1-1) or a compound represented by General Formula (d1-2), in the formulae, Ct represents a tertiary carbon atom, a carbon atom at an ?-position of Ct constitutes a carbon-carbon unsaturated bond, wa02 represents an aromatic hydrocarbon group, and Rb1 represents hydrocarbon group, where a fluorine atom is not containedType: ApplicationFiled: May 25, 2021Publication date: December 30, 2021Inventors: Yoichi HORI, Yosuke SUZUKI
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Publication number: 20210376168Abstract: A semiconductor device includes a first electrode, a first semiconductor region connected to the first electrode and being of a first conductivity type, a second semiconductor region provided on the first semiconductor region, contacting the first semiconductor region and being of a second conductivity type, first metal layers and second metal layers provided on the second semiconductor region and contacting the second semiconductor region, a third semiconductor region provided between the first semiconductor region and the first metal layer, and a second electrode. The third semiconductor region contacts the first and second semiconductor regions and being of the first conductivity type. An impurity concentration of the third semiconductor region is greater than an impurity concentration of the first semiconductor region. The second electrode contacts the first semiconductor region, the second semiconductor region, the first metal layers, and the second metal layers.Type: ApplicationFiled: February 17, 2021Publication date: December 2, 2021Inventors: Kei Tanihira, Yoichi Hori
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Patent number: 11187981Abstract: A resist composition including a resin component whose solubility in a developing solution is changed due to an action of an acid, in which the resin composition has a constitutional unit derived from a compound containing a chain-like aliphatic acid dissociable group or a monocyclic aliphatic acid dissociable group and a constitutional unit derived from a compound containing an aromatic hydrocarbon group-containing acid dissociable group.Type: GrantFiled: December 14, 2018Date of Patent: November 30, 2021Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Yoichi Hori, Yasuhiro Yoshii, Masahito Yahagi, Hitoshi Yamano, Takahiro Kojima