Abstract: A semiconductor device according to an embodiment includes first and second electrode, and semiconductor layer between the first and the second electrode. The semiconductor layer has first and second plane. The semiconductor layer includes first region of first conductivity type, second region of second conductivity type between the first plane and the first region, third region of second conductivity type between the first plane and the first region and, fourth region of second conductivity type between the second and the third region, and fifth region of first conductivity type having first portion provided between the first and the fourth region. Width of the fourth region is larger than that of the second region. Distance between the second region and the first portion is smaller than distance between the second and the fourth region. And width of the first portion is smaller than that of the fourth region.

Abstract: A resist composition containing a resin component exhibiting changed solubility in a developing solution under action of acid, and a compound represented by General Formula (d0), the resin component containing a polymer compound having a constitutional unit having a monocyclic alicyclic hydrocarbon group, Rd0 represents a monovalent organic group; Xd0 represents —O—, —C(?O)—, —O—C(?O)—, —C(?O)—O—, —S—, or —SO2—; Ydx0 represents a single bond or the like; Rd001 to Rd004 represents a hydrogen atom or the like; and Mm+ represents an m-valent organic cation

Abstract: A resist composition containing a compound (D0) represented by General Formula (d0) and a polymer compound having a constitutional unit (a01) containing an acid-decomposable group having a polarity which is increased by action of an acid and a constitutional unit (a02) derived from a compound represented by General Formula (a02-1), and a solid content concentration is 5% by mass or less. In General Formula (d0), Rd0 represents a monovalent organic group, Xd0 represents —O— or the like, Yd0 represents a single bond, and Mm+ represents an m-valent organic cation.

Abstract: A resist composition is provided that generates an acid upon exposure and whose solubility in a developing solution is changed by action of an acid, the resist composition containing a base material component whose solubility in a developing solution is changed by action of an acid, and a compound represented by General Formula (e1) in which Rd01 represents a monovalent organic group and Rd02 represents a single bond or a divalent linking group

Abstract: A filter leakage monitoring device of a particle separator includes a plurality of sampling pipes each of which has a visible part through which an inside of the sampling pipe can be visually recognized, a suction port of each of which corresponds to each of a plurality of filters disposed in a particle-containing air chamber into which air containing particles are introduced, the suction port of each of which is positioned near an air intake port that sucks air that has passed through each of the filters into a clean air chamber, and a vacuum pump that sucks air through each of the sampling pipes.

Abstract: A resist composition containing: a base material component exhibiting changed solubility in a developing solution under action of acid; an acid generator component generating an acid upon exposure; and a photodegradable base controlling diffusion of the acid generated from the acid generator component upon exposure, in which the photodegradable base contains a compound represented by General Formula (d0), in which R011 represents an aryl group having an electron-withdrawing group, R021 and R022 each independently represent an aryl group which may have a substituent, Z represents a sulfur atom, an oxygen atom, a carbonyl group, or a single bond, and X? represents a counter anion

Abstract: A resist composition including a resin component (A1) having a structural unit (a01), a structural unit (a02) and a structural unit (a03) derived from compounds represented by general formulae (a01-1), (a02-1) and (a03-1), respectively (W01 represents a polymerizable group-containing group containing no oxygen; W02 represents a polymerizable group-containing group containing oxygen; W03 represents a polymerizable group-containing group which may contain oxygen; Wa01 and Wa02 represent an aromatic hydrocarbon group; Xa03 represents a group which forms an alicyclic hydrocarbon group together with Ya03; Ra00 represents a hydrocarbon group which may have a substituent)

Abstract: A resist composition including a base component and a fluorine additive component (F), the component (F) including a copolymer having a structural unit (f1) represented by general formula (f1-1) or (f1-2), and a structural unit (f2) represented by general formula (f2-1) (in formula (f1-1) and (f2-1), R represents a hydrogen atom or the like; at least one of Raf11 and Raf12, and at least one of Raf13 and Raf14 represents a hydrocarbon group substituted with a fluorine atom, and the total number of carbon atoms is 3 or more, provided that a hydrocarbon group forming a bridge structure is excluded; and the structural unit (f2) has a specific acid dissociable group containing an aliphatic cyclic group having no bridge structure

Abstract: A resist composition including a compound (D0) formed of an anion moiety and a cation moiety which is represented by Formula (d0), and a resin component (A1) which has a constitutional unit (a0) obtained from a compound represented by Formula (a0-1), in which a polymerizable group at a W portion is converted into a main chain, and a constitutional unit (a1) containing an acid decomposable group whose polarity is increased due to an action of an acid. In Formula (d0), Rd0 represents a substituent and n represents an integer of 2 or greater. In Formula (a0-1), Wax0 represents an (nax0+1)-valent aromatic hydrocarbon group which may have a substituent.

Abstract: A resist composition including a compound (D0) represented by general formula (d0) and a resin component (A1) has a structural unit (a0) in which a compound represented by general formula (a0-1) has a polymerizable group within the W1 portion converted into a main chain (in formula (d0), Rd01 represents a fluorine atom or a fluorinated alkyl group; In formula (a0-1), W1 represents a polymerizable group-containing group; Ct represents a tertiary carbon atom, and the ?-position of Ct is a carbon atom which constitutes a carbon-carbon unsaturated bond; R11 represents an aromatic hydrocarbon group; or a chain hydrocarbon group; R12 and R13 each independently represents a chain hydrocarbon group, or R12 and R13 are mutually bonded to form a cyclic group).

Abstract: A resist composition which generates an acid upon exposure and whose solubility in a developing solution is changed due to an action of the acid, the resist composition including a base material component whose solubility in a developing solution is changed due to the action of an acid, an acid generator component which generates an acid upon exposure, and an organic acid which contains at least one carboxy group, in which the acid generator component contains a compound represented by formula (b1) in which R2011 to R2031 represent an aryl group, an alkyl group, or an alkenyl group. R2011 to R2031 have a total of four or more substituents containing fluorine atoms, Xn? represent an n-valent anion, and n represents an integer of 1 or greater.

Abstract: A resist composition including a structural unit represented by General Formula (a0-1), a structural unit represented by General Formula (a0-2), and a structural unit represented by General Formula (a0-3); in the Formula (a0-1), Rx01 is an acid dissociable group represented by General Formula (a01-r-1) or General Formula (a01-r-2) in Formula (a01-r-1) and Formula (a01-r-2), Xa and Ya, and Xaa and Yaa are groups that together form an aliphatic cyclic group having 3 to 5 carbon atoms; in Formula (a0-2), R1 is a fluorinated alkyl group; in Formula (a0-3), Wax3 is an aromatic hydrocarbon group.

Abstract: A semiconductor device of an embodiment includes a silicon carbide layer having a first plane and a second plane; a first silicon carbide region of a first conductivity type in the silicon carbide layer; a second silicon carbide region of a second conductivity type between the first silicon carbide region and the first plane; a third silicon carbide region of the second conductivity type between the first silicon carbide region and the first plane, the third silicon carbide region extending in a first direction parallel to the first plane; a first electrode provided on a side of the first plane; a second electrode provided on a side of the second plane; and a metal silicide layer provided between the first electrode and the second silicon carbide region, the metal silicide layer having a portion being in contact with the first plane, and a shape of the portion being an octagon.

Abstract: A resist composition including a resin component having a structural unit derived from a compound represented by general formula (a0-1) and a structural unit containing an acid dissociable group which exhibits increased polarity by the action of acid, and an organic solvent including a component (S1) and a component (S2), the amount of the component (S1) in the organic solvent is more than 50% by weight (W1 represents a polymerizable group-containing group; Yax1 represents a single bond or a (nax1+1)-valent linking group; and nax1 represents an integer of 1 to 3): component (S1): propylene glycol monoalkyl ether component (S2): at least one of propylene glycol monoalkylether carboxylate, cycloalkanone, alkyl lactate, lactone, diacetone alcohol, and 2-hydroxyisobutyric acid alkyl ester

Abstract: A resist composition including a polymeric compound having a structural unit in which a compound represented by formula (a0-1) has a polymerizable group within the W1 portion converted into a main chain, and a compound represented by formula (b1-1) in which W1 represents a polymerizable group-containing group; Ct represents a tertiary carbon atom, and the ?-position of Ct is a carbon atom which constitutes a carbon-carbon unsaturated bond; R11 represents an aromatic hydrocarbon group or a chain hydrocarbon group; R12 and R13 are mutually bonded to form a 5-membered aliphatic monocyclic group, or a condensed polycyclic hydrocarbon group containing a 5-membered aliphatic monocyclic ring; Rb11 represents a cyclic group; Rb10, Rb20 and Rb30 each independently represents a substituent; nb1 represents an integer of 0 to 4; nb2 represents an integer of 0 to 5; nb3 represents an integer of 0 to 5; and X? represents a counteranion.

Abstract: A semiconductor device of an embodiment includes a silicon carbide layer having a first plane and a second plane; a first silicon carbide region of a first conductivity type in the silicon carbide layer; a second silicon carbide region of a second conductivity type between the first silicon carbide region and the first plane; a third silicon carbide region of the second conductivity type between the first silicon carbide region and the first plane, the third silicon carbide region extending in a first direction parallel to the first plane; a first electrode provided on a side of the first plane; a second electrode provided on a side of the second plane; and a metal silicide layer provided between the first electrode and the second silicon carbide region, the metal silicide layer having a portion being in contact with the first plane, and a shape of the portion being an octagon.

Abstract: A semiconductor device includes a semiconductor layer located between first and second electrodes. The contact location of the semiconductor layer with the first electrode forms a first contact plane. The semiconductor layer includes a first-conductivity-type first semiconductor region in contact with the first electrode, a second-conductivity-type second semiconductor region located between the first electrode and the first semiconductor region and contacting the first electrode, a second-conductivity-type third semiconductor region located between the first electrode and the second semiconductor region and contacting the first electrode and having a higher impurity concentration than that of the second semiconductor region, and a second-conductivity-type fourth semiconductor region located between the first electrode and the first semiconductor region and contacting the first electrode.

Abstract: A method for forming a resist pattern including forming a first contact hole pattern including a hole portion and a hole-unformed portion, which includes alkali developing the exposed positive-type resist film; preparing a structure including the first contact hole pattern and a first layer which covers the first contact hole pattern, which includes forming a first layer by applying a solution including an acid or a thermal acid generator onto a support on which the first contact hole pattern is formed; forming organic solvent-soluble and organic solvent-insoluble regions on the hole-unformed portion, which includes heating the structure; and forming a second contact hole pattern on the hole-unformed portion, which includes developing the heated structure with an organic solvent.

Abstract: A semiconductor device is provided having a first region and a second region surrounding the first region includes a first electrode, a second electrode, a first semiconductor layer of a first conductivity type between the first electrode and the second electrode, a second semiconductor layer of the first conductivity type located over the first semiconductor layer, a third semiconductor layer of the second conductivity type on the second semiconductor layer in the first region, a fourth semiconductor layer of the first conductivity type between the third semiconductor layer and the second semiconductor layer, a fifth semiconductor layer of the second conductivity type on the second semiconductor layer in the second region, and a sixth semiconductor layer of the first conductivity type located between the fifth semiconductor layer and the second semiconductor layer, wherein the width of the fourth semiconductor layer is less than the width of the sixth semiconductor layer.

Abstract: A resist composition including a resin component whose solubility in a developing solution is changed due to the action of the acid, in which the resin component has a constitutional unit derived from a compound represented by Formula (a0-1) and a constitutional unit containing an acid decomposable group whose polarity is increased due to the action of the acid. In the formula, W represents a polymerizable group-containing group, Ya0 represents a carbon atom, Xa0 represents a group that forms a monocyclic aliphatic hydrocarbon group together with Ya0, some or all hydrogen atoms in the monocyclic aliphatic hydrocarbon group may be substituted with substituents, and Ra00 represents an aromatic hydrocarbon group which may have a substituent.