Abstract: A semiconductor device includes a first electrode, a second electrode, a first semiconductor region that is formed between the first electrode and the second electrode and is in contact with the first electrode, a second semiconductor region that is formed between the first semiconductor region and the second electrode, a contact region that is formed between the second semiconductor region and the second electrode and is in contact with the second semiconductor region and the second electrode, a plurality of third semiconductor regions that are formed between the second electrode and the first semiconductor region and are in contact with the second electrode, and a wiring that is in contact with the second electrode, a portion of the wiring bonded to the second electrode being positioned above the third semiconductor region and not positioned above the contact region.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor region, a first electrode, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, a fifth semiconductor region, and a second electrode. The first electrode forms a Schottky junction with the first region. The second region is provided between the first region and the first electrode. The third region is provided between the first region and the first electrode and forms an ohmic junction with the first electrode. The fourth region is provided between the first region and the third region. The fourth region has a higher impurity concentration than the first region. The fifth region is provided between the third region and the first electrode. The fifth region has a higher impurity concentration than the third region. The second electrode is provided on opposite side of the first region from the first electrode.

Abstract: A semiconductor device includes first and second electrodes. First semiconductor regions of a first conductivity type are positioned between the first electrode and the second electrode and contact the first electrode. These semiconductor regions are arranged along a first direction. A second semiconductor region of the first conductivity type also contacts the first electrode and is disposed around the plurality of first semiconductor regions. The second semiconductor region has a dopant concentration that is higher than the first semiconductor regions. A semiconductor layer of a second conductivity type has portions that are between the first semiconductor regions and the second semiconductor region. These portions are in Schottky contact with the first electrode.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor region, a first electrode, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, a fifth semiconductor region, and a second electrode. The first electrode forms a Schottky junction with the first region. The second region is provided between the first region and the first electrode. The third region is provided between the first region and the first electrode and forms an ohmic junction with the first electrode. The fourth region is provided between the first region and the third region. The fourth region has a higher impurity concentration than the first region. The fifth region is provided between the third region and the first electrode. The fifth region has a higher impurity concentration than the third region. The second electrode is provided on opposite side of the first region from the first electrode.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device, including: detecting whether or not a defect being present in a wafer substrate and obtaining coordinate information of the defect; and determining positions of a first disposal region and a second disposal region in a semiconductor chip region based on the coordinate information so that the defect falls in the first disposal region in disposing in a plane of the semiconductor chip region having the first disposal region on which a first diode having a first conductivity type region and a second conductivity type region being disposed and the second disposal region on which a second diode having a metal film and a semiconductor region contacting the metal film being disposed.

Abstract: A semiconductor device includes first and second electrodes. First semiconductor regions of a first conductivity type are positioned between the first electrode and the second electrode and contact the first electrode. These semiconductor regions are arranged along a first direction. A second semiconductor region of the first conductivity type also contacts the first electrode and is disposed around the plurality of first semiconductor regions. The second semiconductor region has a dopant concentration that is higher than the first semiconductor regions. A semiconductor layer of a second conductivity type has portions that are between the first semiconductor regions and the second semiconductor region. These portions are in Schottky contact with the first electrode.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor region, a first electrode, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, a fifth semiconductor region, and a second electrode. The first electrode forms a Schottky junction with the first region. The second region is provided between the first region and the first electrode. The third region is provided between the first region and the first electrode and forms an ohmic junction with the first electrode. The fourth region is provided between the first region and the third region. The fourth region has a higher impurity concentration than the first region. The fifth region is provided between the third region and the first electrode. The fifth region has a higher impurity concentration than the third region. The second electrode is provided on opposite side of the first region from the first electrode.

Abstract: A resist composition which generates an acid upon exposure and exhibits changed solubility in a developing solution by the action of the acid contains a high-molecular weight compound (A1) having a constituent unit (a0) represented by a general formula (a0-1) and a constituent unit (a1-1) including a monocyclic group-containing acid decomposable group whose polarity increases by the action of an acid. In the formula (a0-1), R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Ya01 represents a single bond or a divalent linking group; X01 represents a sulfur atom or an oxygen atom; and Ra01 represents an optionally substituted cyclic group, chain alkyl group, or chain alkenyl group.

Abstract: A method of producing a copolymer, including copolymerizing a monomer (am0) containing a partial structure represented by formula (am0-1) shown below, a monomer (am1) containing an acid decomposable group which exhibits increased polarity by the action of acid and a monomer (am5) containing an —SO2— containing cyclic group in the presence of a nitrogen-containing compound (X) having a conjugated acid with an acid dissociation constant of less than 10 (in the formula, *0 to *4 each represents a valence bond).

Abstract: A resist pattern formation method including formation of a resist film, exposure, development, and subsequent rinsing using a resist composition containing a high-molecular compound having a constituent unit represented by the formula (a0-1), a constituent unit containing an acid decomposable group whose polarity increases by the action of an acid, and a constituent unit containing a group represented by the formula (a2-r-1). R represents a hydrogen atom, an alkyl group, or a halogenated alkyl group; Ra01 represents a lactone-containing polycyclic group, an —SO2-containing polycyclic group, or a cyano group-containing polycyclic group; Ra?21 represents a hydrogen atom, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, —COOR?, —OC(?O)R?, a hydroxyalkyl group, or a cyano group; R? represents a hydrogen atom or an alkyl group; and n? represents an integer of from 0 to 2.

Abstract: A liquid crystal display device includes an array substrate and an opposing substrate that are disposed face to face at a prescribed interval. The array substrate includes a scan line, signal lines, switching devices disposed at intersections between the scan line and the signal lines, pixel electrodes disposed in a matrix manner and driven by the switching devices and auxiliary capacitance lines for retaining applied voltage for the pixel electrodes. The pixel electrodes have side edges superposed on the signal lines or black matrices formed on the opposing substrate to achieve shielding of light, and the side edges have parts superposed on shield electrodes disposed on the auxiliary capacitance lines to make an amount of superposition between the pixel electrodes and the signal lines or the black matrices in a region corresponding to positions where the shield electrodes are disposed smaller than that in other regions.

Abstract: A vehicle navigation system (e.g., GPS) with multi-use display generator that provides for the switching of a displayed image from a navigational based image to a non-navigational image such as a favorite photo. This versatility allows for the user of a vehicle navigation to avoid having to look at a boring display of map images and instead view more desirable non-navigation images such as full 100% displays of a favorite photo shot. Also if the system is in a map image mode and the user does not utilize any portion of the vehicle navigation system for a predetermined period of time an automated switchover system is provided to cause a predetermined or randomly chosen favorite photo to appear on the display.

Abstract: A vehicle navigation system (e.g., GPS) with multi-use display generator that provides for the switching of a displayed image from a navigational based image to a non-navigational image such as a favorite photo. This versatility allows for the user of a vehicle navigation to avoid having to look at a boring display of map images and instead view more desirable non-navigation images such as full 100% displays of a favorite photo shot. Also if the system is in a map image mode and the user does not utilize any portion of the vehicle navigation system for a predetermined period of time an automated switchover system is provided to cause a predetermined or randomly chosen favorite photo to appear on the display.