Abstract: A method is provided for transmitting a Media Access Protocol (MAP) message in a wireless communication system. A base station transmits the MAP message including operation mode information indicating a data burst allocation scheme, to a mobile station. The mobile station identifies a data burst according to the operation mode information included in the MAP message received from the base station.

Abstract: Disclosed are a system and a method for optimizing a handover process in a mobile broadband wireless access system. The method performs handover in a mobile communication system including a mobile subscriber station, a serving base station currently providing service to the mobile subscriber station, and at least one neighbor base stations adjacent to the serving base station. The method includes the steps of receiving a handover request from the mobile subscriber station by the serving base station; instructing the mobile subscriber station to perform handover by the serving base station in response to the handover request from the mobile subscriber station and performing by the mobile subscriber station a network reentry process for fast handover in accordance with information included in a handover instruction from the serving base station.

Abstract: Multi-type air conditioner comprising an outdoor unit installed in an outdoor, comprising a compressor, a refrigerant flow controlling part connected to a discharge end of the compressor for guiding the refrigerant proper to operation conditions selectively, an outdoor heat exchanger connected to the refrigerant flow controlling part, a defrosting device at a side of the outdoor heat exchanger, and a piping system connected between the parts, a plurality of indoor units each installed in a room and having an indoor heat exchanger and an electronic expansion valve having one end connected to one end of the indoor heat exchanger, and a distributor between the outdoor unit and the indoor units for selectively guiding refrigerant from the outdoor unit to the plurality of indoor units proper to operation conditions, and guiding the refrigerant passed through the indoor units to the outdoor unit again.

Abstract: A phase change memory device includes a semiconductor substrate having an active region. An insulation layer is formed on the semiconductor substrate grooves and holes are defined in the insulation layer, with the holes being defined under the grooves to expose portions of the active region. Cell switching are elements formed in the holes and lower portions of the grooves and a phase change layer formed in upper portions of the grooves over the cell switching elements and on portions of the insulation layer adjacent to the grooves such that the phase change layer has a pore structure. Top electrodes are formed on the phase change layer.

Abstract: Disclosed are polysilazane, a method of synthesizing the polysilazane, a composition for manufacturing a semiconductor device, and a method of manufacturing a semiconductor device using the composition. The polysilazane is synthesized through a reaction, under a catalyst, between dichlorosilane, trichlorosilane, and ammonia added in a reaction solvent as a reactant. In this instance, a polystyrene conversion weight average molecular weight of the polysilazane is about 2,000 to 30,000.

Abstract: Provided is a method of controlling an electronic device by using a remote control device comprising a touch screen, the method including selecting one of a plurality of functions supported by the electronic device via the touch screen, sequentially displaying a plurality of user interfaces, usable for controlling the function selected with an input detected by the touch screen, one-by-one, and controlling the electronic device by using one of the plurality of user interfaces that are sequentially displayed.

Abstract: A phase change memory device includes a semiconductor substrate having bar-shaped active regions which extend in a first direction; base regions and emitter regions alternately formed in each active region; lower electrodes formed over the emitter regions to connect to the respective emitter regions; a phase change layer and an upper electrode stacked on each of the lower electrodes; sub bit lines formed over the upper electrodes to come into contact with the corresponding upper electrodes; word lines arranged over the sub bit lines to come into contact with the base regions; and a main bit line formed over the word line to come into contact with the sub bit lines. The phase change memory device is able to prevent a change in the composition of the phase change layer and additionally is able to widen the sensing margin of a bit line.

Abstract: A phase change memory device includes a semiconductor substrate having an impurity region and an interlayer dielectric applying a tensile stress formed on the semiconductor substrate and having contact holes exposing the impurity region. Switching elements are formed in the contact holes; and sidewall spacers interposed between the switching elements and the interlayer dielectric and formed as a dielectric layer applying a compressive stress.

Abstract: A phase change memory device includes a semiconductor substrate having a plurality of bar-type active areas. A plurality of word lines are arranged in a direction perpendicular to the active areas on the semiconductor substrate, and a first pair of the word lines connected to each other at each first end thereof is arranged alternately with a second pair of the word lines connected to each other at each second end thereof opposite to the first end. Source areas and drain areas are formed in the active areas. Common source areas are each connected to the source areas. A plurality of lower electrodes are connected to the respective drain areas. Phase change layers make contact with every two diagonally adjoining lower electrodes. Upper electrodes are formed on the phase change layers, and bit lines are arranged in a direction of the active areas and are connected to the upper electrodes.

Abstract: A method is provided for transmitting a MAP message in a wireless communication system. A base station transmits the MAP message including operation mode information indicating a data burst allocation scheme, to a mobile station. The mobile station identifies a data burst according to the operation mode information included in the MAP message received from the base station.

Abstract: A phase change memory device is manufactured by forming a sacrificial layer and a hard mask layer on a lower electrode; performing a first etching these layers and forming on the lower electrode a first stack pattern having a first width less than a width of the lower electrode; performing a second etching the first stack pattern and forming a second stack pattern having a second width less than the first width; forming an insulation to cover the second stack pattern; CMPing the insulation layer to expose the sacrificial layer; removing the sacrificial layer to define a contact hole; forming a lower electrode contact in the contact hole; and forming a phase change layer and an upper electrode on the insulation layer including the lower electrode contact. By manufacturing the phase change memory device in this manner, the size of the contact hole can be decreased and uniformly defined.

Abstract: A method for providing an interactive data service between a base station and a mobile station in a mobile communication system including at least one mobile station, the base station communicating with the mobile station, and a server connected to the base station. The base station simultaneously transmits data transmitted from the server, to one or more mobile stations over a forward common channel. A particular mobile station receiving a service through the common channel transmits reverse transmission data over a dedicated channel.

Abstract: A phase change memory device is made by processes including forming a first interlayer dielectric on a semiconductor substrate that has junction regions. Then etching the first interlayer dielectric and thereby defining contact holes that expose the junction regions. A conductive layer is formed on the first interlayer dielectric to fill the contact holes. Forming a hard mask layer on the conductive layer and etching the hard mask layer and the conductive layer to form contact plugs in the contact holes. Finally, forming a conductive layer pattern that is located on the contact plug and portions of the first interlayer dielectric adjacent to the contact plug and having a hard mask thereon.

Abstract: A phase change memory device includes a silicon substrate having a cell region and a peripheral region. A first insulation layer is formed in the cell region and includes a plurality of holes. Cell switching elements are formed in the holes of the first insulation layer and heat sinks are formed on the cell switching elements. The heaters are formed on the center of the heat sinks and spacers are formed on the sidewalls. A gate is formed in the peripheral region of the silicon substrate formed of a gate insulation layer, a first conductive layer, a second conductive layer, and a hard mask layer. A second insulation layer covers the entire surface of the resultant silicon substrate and exposes the spacers and the heaters and the hard mask layer. Finally, a stack pattern of a phase change layer and a top electrode is formed on the heaters.

Abstract: A phase change memory device and a corresponding method of manufacturing the same is presented. The phase change memory device includes a silicon substrate, a first insulation layer, cell switching elements, heaters, a gate, a second insulation layer, a barrier layer, a phase change layer and top electrodes. The first insulation layer is in the cell region of the substrate and has a first holes. The cell switching elements are formed in the first holes. The heaters are formed on the cell switching elements. The gate is in the peripheral region of the substrate and is higher than the cell switching elements. The second insulation layer having second holes which expose the heaters, and is defined to expose a hard mask layer of the gate. The barrier layer is on sidewalls of the second holes and on the second insulation layer. The phase change layer is formed in and over the second holes in which the barrier layer is formed. The top electrodes are formed on the phase change layer.

Abstract: In response to a BCMCS service request from a mobile station, a base station separately informs the mobile station whether the requested BCMCS service is available. Thus, the base station can include only broadcast channel information necessary for actual broadcast in a broadcasting overhead message, and if the BCMCS service is stopped or unavailable, the base station can order the mobile station to interrupt the BCMCS service, thereby reducing the load on system resources.

Abstract: A phase-change memory device more precisely controls electrical current required to accomplish a phase change by using contact holes that extend between phase change layers that are sized differently from each other.

Abstract: Disclosed is a method and system for forming and transmitting to an MS a broadcast message for notifying information of neighbor BSs in a BWA communication system. The method includes scanning neighbor base stations adjacent to the serving base station, collecting information of the scanned neighbor base stations, comparing a size of the information of the scanned neighbor base stations with a size of a frame for carrying the information of the neighbor base stations constructing at least one broadcast message that includes the information of the neighbor base stations according to a result of the comparison, setting up fields of the constructed broadcast message according to information included in the constructed broadcast message and broadcasting the broadcast message including the setup fields.

Abstract: A control device includes a search unit which receives profiles from each of a plurality of apparatuses in a home network and searches for a plurality of apparatuses able to be controlled in the home network, a user interface unit which displays information regarding the plurality of apparatuses found as a result of searching, and a control unit which pairs the control device with an apparatus selected from among the plurality of apparatuses found. Therefore, it is possible to provide a user with information regarding the plurality of apparatuses in the home network, so that the user may easily perform pairing using the information.

Abstract: A phase change memory device includes a semiconductor substrate having active regions and an isolation structure; gate lines extending in a direction perpendicular to the active regions; a source region and a drain region formed in a surface of each active region; a dot type lower electrode including a first contact plug formed in the drain region; second contact plugs formed in the source region and the isolation structure forming a line parallel to the gate line; a lower electrode contact formed on the lower electrode; a phase change layer and an upper electrode formed on the lower electrode contact; an upper electrode contact formed on the upper electrode; contacts for ground lines, formed between the active regions to come into contact with the second contact plugs; a bit line formed in the active region; and ground lines formed between the active regions.