Patents by Inventor Yong Chang

Yong Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Air conditioning apparatus and method for determining the amount of refrigerant of air-conditioning apparatus
    Publication number: 20090211281
    Abstract: In a refrigerant amount determining method of an air-conditioning apparatus, when a refrigerant amount determining mode is requested to be performed, whether or not the amount of refrigerant in the air-conditioning apparatus can be automatically determined. Thus, a user can easily check whether or not the refrigerant charged in the air-conditioning apparatus is excessive or insufficient.
    Type: Application
    Filed: February 4, 2009
    Publication date: August 27, 2009
    Applicant: LG Electronics Inc.
    Inventors: Seung Yong Chang, Chi Woo Song, Sung Hwan Kim, Chang Min Choi
  • PHASE CHANGE MEMORY DEVICE PREVENTING CONTACT LOSS AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20090200537
    Abstract: A phase change memory device includes a silicon substrate having a phase change cell region. A plurality of phase change cell are formed in the phase change region of the silicon substrate. A contact comprising a first contact and a second contact is formed on each of the phase change cells. A plurality of bit lines are electrically connected to the contacts. A contact plug is formed on the silicon substrate in a region outside of the phase change cell region, and a word line is formed over the silicon substrate and is connected to the contact plug.
    Type: Application
    Filed: September 16, 2008
    Publication date: August 13, 2009
    Inventors: Heon Yong CHANG, Sang Heon KIM
  • System for handover in BWA communication system and method thereof
    Patent number: 7574210
    Abstract: Disclosed is a handover system in a BWA communication system. In the system, a serving BS broadcasts neighbor BS information including BS identifiers of a plurality of neighbor BSs and reference signal indices indicating reference signals used by the neighbor BSs, a MS receives the neighbor BS information and requests a scanning interval to the serving BS at a timing point at which the MS wants to perform a scanning, the serving BS allocates the scanning interval to the MS in response to a request for the scanning interval, and the MS scans reference signals received from the neighbor BSs during the scanning interval in response to the neighbor BS information.
    Type: Grant
    Filed: June 7, 2005
    Date of Patent: August 11, 2009
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Jung-Won Kim, Tae-Won Kim, Bo-Kyung Wang, Yong Chang, Hong-Sung Chang
  • Phase change memory device with reduced unit cell size and improved transistor current flow and method for manufacturing the same
    Patent number: 7570512
    Abstract: A phase change memory device includes: a semiconductor substrate having active areas; a pair of word lines formed over the active areas and connected with each other at each end thereof; source areas formed in the respective active areas at both sides of the pair of word lines; drain areas formed in the respective active areas between the word lines of the pair of word lines connected with each other at each end thereof; ground lines and cell selection lines formed so as to make contact with the respective source areas respectively; lower electrodes formed so as to make contact with the drain areas; phase change layers and upper electrodes stacked over the respective lower electrodes; and bit lines formed over upper portion of the active areas so as to make contact to the upper electrodes.
    Type: Grant
    Filed: July 16, 2007
    Date of Patent: August 4, 2009
    Assignee: Hynix Semiconductor Inc.
    Inventor: Heon Yong Chang
  • PHASE CHANGE MEMORY DEVICE HAVING PLUG-SHAPED PHASE CHANGE LAYERS AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20090184304
    Abstract: A phase change memory device having plug-shaped phase change layers and a process of manufacturing the same is provided. The device and process includes forming first electrodes on a substrate. An insulation layer is then formed to cover the first electrodes. Plug-shaped phase change layers are then formed in the insulation layer to contact the first electrodes. The plug-shaped phase change layers have a straight-line or an ‘L’ shape when viewed as a cross-section and a horseshoe or a semicircle shape when viewed from above. Finally, bit lines are formed on the insulation layer to contact the phase change layers and additionally serve as second electrodes. The device may further include heaters interposed between the first electrodes and the plug-shaped phase change layers.
    Type: Application
    Filed: March 7, 2008
    Publication date: July 23, 2009
    Inventors: Heon Yong CHANG, Suk Kyoung HONG
  • Phase-change memory device and method of manufacturing the same
    Patent number: 7553692
    Abstract: Disclosed are a phase-change memory device and its manufacturing method, which can reduce a contact area between a bottom electrode and a phase-change layer, thereby reducing the quantity of current necessary for phase change. The phase-change memory device comprises: a bottom electrode formed on a contact plug; a phase-change layer formed on the bottom electrode and having a shape of a character ‘?’; and a top electrode formed on the phase-change layer.
    Type: Grant
    Filed: June 30, 2008
    Date of Patent: June 30, 2009
    Assignee: Hynix Semiconductor Inc.
    Inventor: Heon Yong Chang
  • Method of Manufacturing Ni-Based Superalloy Component For Gas Turbine Using One-Step Process Of Hot Isostatic Pressing And Heat Treatment And Component Manufactured Thereby
    Publication number: 20090148337
    Abstract: Disclosed herein are a method of manufacturing a Ni-based superalloy component for a gas turbine using a one-step process of hot isostatic pressing (HIP) and heat treatment, and a component manufactured by the method. In the method, an HIP process and a heat treatment process, which have been performed to manufacture or repair a Ni-based superalloy component for a gas turbine, are performed as a one-step process using an HIP apparatus. Thus, component defects, such as micropores and microcracks, which are generated when casting, welding, or brazing the Ni-based superalloy component for a gas turbine used for a combined cycle thermal power plant or airplane, can be cured using an HIP apparatus at high temperature and high pressure and, at the same time, the physical properties of the Ni-based superalloy component can be optimized using the heat treatment process.
    Type: Application
    Filed: October 31, 2007
    Publication date: June 11, 2009
    Applicant: Korea Electric Power Corporation
    Inventors: Min-Tae KIM, Sung-Yong Chang, Jong-Bum Won, Won-Young Oh
  • PHASE CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20090137080
    Abstract: A phase change memory device reduces the current necessary to cause a phase change of a phase change layer. The phase change memory device includes a first oxide layer formed on a semiconductor substrate; a lower electrode formed inside the first oxide layer; a second oxide layer formed on the first oxide layer including the lower electrode, the second oxide having a hole for exposing a part of the lower electrode; a phase change layer formed on a surface of the hole with a uniform thickness so as to make contact with the lower electrode; and an upper electrode formed in the hole and on a part of the second oxide layer, the part being adjacent to the hole.
    Type: Application
    Filed: January 26, 2009
    Publication date: May 28, 2009
    Inventors: Heon Yong CHANG, Suk Kyoung HONG, Hae Chan PARK
  • PHASE CHANGE RAM DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20090137081
    Abstract: A phase change RAM device includes a semiconductor substrate having a phase change cell area and a voltage application area; a first oxide layer, a nitride layer and a second oxide layer sequentially formed on the semiconductor substrate; a first plug formed in the first oxide layer, the nitride layer and the second oxide layer of the phase change cell area; a second plug formed in the first oxide layer and the nitride layer of the voltage application area; a conductive line formed in the second oxide layer; a third oxide layer formed on the second oxide layer; a lower electrode shaped like a plug, the lower electrode being formed so as to directly make contact with the first plug; and a phase change layer and an upper electrode sequentially formed on the lower electrode in a pattern form.
    Type: Application
    Filed: January 30, 2009
    Publication date: May 28, 2009
    Inventors: Heon Yong CHANG, Suk Kyoung HONG, Hae Chan PARK
  • Method and system for providing a broadcast/multicast service in a wireless communication system
    Patent number: 7536176
    Abstract: A broadcast service method and system for use in wireless communication system. The broadcast service method and system for a wireless communication system according to the present invention assigns individual unique BCMCS IDs to a plurality of BCMCS controllers, such that it can recognize a changed BCMCS controller within a cell in which an MS is located, BSPM (Broadcast Service Parameter Message) effectiveness, the BCMCS conversion, etc.
    Type: Grant
    Filed: April 12, 2004
    Date of Patent: May 19, 2009
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Beom-Sik Bae, Dae-Gyun Kim, Jung-Soo Jung, Jun-Hyuk Song, Yong Chang, Nae-Hyun Lim
  • PHASE CHANGE MEMORY DEVICE CAPABLE OF INCREASING SENSING MARGIN AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20090114897
    Abstract: A phase change memory device capable of increasing a sensing margin and a method for manufacturing the same. The phase change memory device includes a semiconductor substrate formed with a device isolation structure which defines active regions; first conductivity type impurity regions formed in surfaces of the active regions and having the shape of a line; a second conductivity type well formed in the semiconductor substrate at a position lower than the device isolation structure; a second conductivity type ion-implantation layer formed in the semiconductor substrate at a boundary between a lower end of the device isolation structure and the semiconductor substrate; a plurality of vertical PN diodes formed on the first conductivity type impurity regions; and phase change memory cells formed on the vertical PN diodes.
    Type: Application
    Filed: March 10, 2008
    Publication date: May 7, 2009
    Inventor: Heon Yong CHANG
  • METHOD FOR NEGOTIATING SECURITY-RELATED FUNCTIONS OF SUBSCRIBER STATION IN WIRELESS PORTABLE INTERNET SYSTEM
    Publication number: 20090119509
    Abstract: The present invention relates to a subscriber station security-related parameter negotiation method in a wireless portable Internet system. The subscriber station security-related parameter negotiation method includes security-related parameters in transmitting/receiving basic capability negotiation request messages and basic capability negotiation response messages such that the subscriber station and the base station negotiate the subscriber station security-related parameters. The security-related parameters include an authorization policy support subfield used to negotiate an authorization policy between the subscriber station and the base station, and message authentication code mode subfields used to negotiate a message authentication code mode.
    Type: Application
    Filed: February 14, 2006
    Publication date: May 7, 2009
    Inventors: Seok-Heon Cho, Tae-Yong Lee, Sun-Hwa Lim, Chul-Sik Yoon, Jun-Hyuk Song, Ji-Cheol Lee, Yong Chang
  • METHOD AND APPARATUS FOR DISPLAYING ITEMS RELATED TO CONTENTS
    Publication number: 20090106675
    Abstract: Provided are a method and apparatus for displaying contents-related items. The method includes using a correlation between a first attribute and a second attribute to determine values of the second attribute, wherein the first attribute is one of a plurality of attributes of the contents-related items, the second attribute is one of a plurality of attributes of a plurality of blocks which is a part or a region of a screen, and each one of the plurality of blocks corresponds to each one contents-related item; and displaying the one or more contents-related items by displaying each corresponding block having the determined value of the second attribute on the screen, wherein the first attribute and the second attribute can be quantitatively represented.
    Type: Application
    Filed: April 29, 2008
    Publication date: April 23, 2009
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ji-bum MOON, Jung-won LEE, Yoo-jin CHOI, Min-jung PARK, Woo-yong CHANG, Chang-seog KO
  • ONE-TRANSISTOR TYPE DRAM
    Publication number: 20090101981
    Abstract: A one-transistor type DRAM simplifies a manufacturing process and reduces the height of a chip. In the one-transistor type DRAM, an active region is defined by a device isolating film. A first word line and a second word line extend across the active region and the device isolating film. A common source region is formed in the portion of the active region between the first and second word lines. Drain regions are formed in the portions of the active region outside of the first and second word lines. A first metal line and a second metal line are connected to the common source region and the drain region, respectively, and a bit line is connected to the second metal line.
    Type: Application
    Filed: June 30, 2008
    Publication date: April 23, 2009
    Inventor: Heon Yong CHANG
  • PHASE CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20090045389
    Abstract: A phase change memory device and a method for manufacturing the same. The method includes the steps of defining bottom electrode contact holes by removing portions of an insulation layer, to expose bottom electrodes, on a semiconductor substrate on which the bottom electrodes and the insulation layer are sequentially formed; forming amorphous silicon spacers on inner sidewalls of the bottom electrode contact holes; and forming bottom electrode contacts in the bottom electrode contact holes.
    Type: Application
    Filed: July 8, 2008
    Publication date: February 19, 2009
    Applicant: HYNIX SEMICONDUCTOR, INC.
    Inventors: Yong Seok Eun, Su Jin Chae, Keum Bum Lee, Heon Yong Chang, Min Yong Lee
  • PHASE CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20090039333
    Abstract: A phase change memory device includes a silicon substrate having a bar-type active region and an N-type impurity region formed in a surface of the active region. A first insulation layer is formed on the silicon substrate, and the first insulation layer includes a plurality of first contact holes and second contact holes. PN diodes are formed in the first contact holes. Heat sinks are formed in the first contact holes on the PN diodes, and contact plugs fill the second contact holes. A second insulation layer having third contact holes is formed on the first insulation layer. Heaters fill the third contact holes. A stack pattern of a phase change layer and a top electrode is formed to contact the heaters. The heat sink quickly cools heat transferred from the heater to the phase change layer.
    Type: Application
    Filed: April 10, 2008
    Publication date: February 12, 2009
    Inventors: Heon Yong CHANG, Myoung Sub KIM, Gap Sok DO
  • Apparatus and method for allocating connection identifier in communication system
    Publication number: 20090017834
    Abstract: An apparatus and a method are disclosed for allocating a connection identifier by a base station in a communication system. The method includes: checking if a mobile station can use a private connection identifier; allocating at least one private connection identifier to the mobile station when the mobile station can use the private connection identifier, wherein the private connection identifier can be allocated to multiple mobile stations controlled by the base station, and at least two private connection identifiers allocated to each mobile station are not different from each other.
    Type: Application
    Filed: June 2, 2008
    Publication date: January 15, 2009
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Geun-Hwi Lim, Won-Il Roh, Yong Chang
  • Phase change RAM device with increased contact area between word line and active area
    Patent number: 7470924
    Abstract: A phase change RAM device, has a first metal wiring for a bit line that is separated from a second metal wiring for applying a supply voltage. A method for fabricating the phase change RAM device includes the steps of forming an isolation layer formed so as to define a T-shaped active area in the semiconductor substrate, forming a word line formed on the active area of the semiconductor substrate including the isolation layer, forming source/drain areas formed at both sides of the word line in the active area, forming an insulating interlayer on entire surface of the semiconductor substrate so as to cover the word line, and forming a first tungsten plug in a portion of the insulating interlayer on the source area and a second tungsten plug in a portion of the insulating interlayer on the drain area.
    Type: Grant
    Filed: May 23, 2006
    Date of Patent: December 30, 2008
    Assignee: Hynix Semiconductor Inc.
    Inventors: Heon Yong Chang, Byoung Ok Song
  • SYSTEM AND METHOD FOR PERFORMING HANDOVER IN A WIRELESS COMMUNICATION SYSTEM
    Publication number: 20080311915
    Abstract: A system and method for performing a handover in a wireless communication system are provided. In the system and method an MS receives a mobile neighbor advertisement message including PDR information about a serving BS and neighbor BSs from the serving BS, selects candidate BSs based on a location of the MS and the PDR information, determines communication states of the candidate BSs, determines a target BS for the handover according to the determined communication states, and performs the handover to the target BS.
    Type: Application
    Filed: June 13, 2008
    Publication date: December 18, 2008
    Applicant: Samsung Electronics Co. Ltd.
    Inventors: Geun-Hwi LIM, Won-Il ROH, Yong CHANG
  • METHOD FOR MANUFACTURING PHASE CHANGE MEMORY DEVICE USING A PATTERNING PROCESS
    Publication number: 20080280411
    Abstract: A phase change memory device is made by processes including forming a first interlayer dielectric on a semiconductor substrate that has junction regions. Then etching the first interlayer dielectric and thereby defining contact holes that expose the junction regions. A conductive layer is formed on the first interlayer dielectric to fill the contact holes. Forming a hard mask layer on the conductive layer and etching the hard mask layer and the conductive layer to form contact plugs in the contact holes. Finally, forming a conductive layer pattern that is located on the contact plug and portions of the first interlayer dielectric adjacent to the contact plug and having a hard mask thereon.
    Type: Application
    Filed: October 12, 2007
    Publication date: November 13, 2008
    Inventor: Heon Yong CHANG