Abstract: A printed circuit board includes: a first board unit including a plurality of first insulating layers and a plurality of first wiring layers respectively disposed on or in the plurality of first insulating layers; a second board unit including one or more second insulating layers and one or more second wiring layers respectively disposed on or in the one or more second insulating layers; and a first passive device embedded in at least one of the first and second board units. The second board unit is disposed on the first board unit, and the first board unit has a second cavity passing through at least a portion of the plurality of first insulating layers on the first passive device based on a stacking direction of the plurality of first wiring layers.

Abstract: A method of manufacturing a micro-light emitting diode (LED)-based display, and a micro-LED-based display are provided. The method includes forming a micro-LED partitioned in the unit of a plurality of sub-pixels on a semiconductor substrate, planarizing the micro-LED by forming a planarization layer on at least a portion of the micro-LED, forming a via hole in the planarization layer, and integrating the micro-LED and a thin-film transistor (TFT) for an operation of the sub-pixels by arranging and depositing the TFT on the planarized micro-LED.

Abstract: A display device is disclosed that includes a substrate, a display portion, a conductive layer, an inorganic layer, and an amorphous silicon layer. The substrate includes a first area including a transmission area and a non-transmission area adjacent to the transmission area, and a second area adjacent to the first area. The display portion is disposed in the non-transmission area and the second area on the substrate. The conductive layer is disposed between the substrate and the display portion, and overlaps the non-transmission area and the second area. The inorganic layer is disposed on the substrate under the conductive layer, in contact with the conductive layer, and overlaps the conductive layer. The amorphous silicon layer is disposed on the substrate, under the inorganic layer, in contact with the inorganic layer, overlaps the conductive layer in the first area, and entirely overlaps the substrate in the second area.

Abstract: A printed circuit board including a first insulating layer; a plurality of first circuit patterns respectively disposed on the first insulating layer; and a plurality of second circuit patterns respectively disposed on the first insulating layer and respectively having a thickness, thinner than a thickness of each of the plurality of first circuit patterns. At least one of the plurality of first circuit patterns and at least one of the plurality of second circuit patterns are alternately and repeatedly arranged, and a method for manufacturing the printed circuit board, are provided.

Abstract: A chemical supply apparatus includes an evaporation unit disposed downstream of a chemical supply source to vaporize supplied chemical thereto, a filter unit disposed downstream of the evaporation unit, wherein the filter unit filters impurities in the vaporized chemical while the vaporized chemical passes through the filter unit, a liquefaction unit disposed downstream of the filter unit to liquefy the vaporized chemical, and a chemical storage tank disposed downstream of the liquefaction unit to store the liquefied chemical therein, wherein an electrode is disposed between the chemical supply source and the liquefaction unit, wherein the electrode electrically reacts with the chemical or particles in the chemical to change electrical properties of the chemical or the particles.

Abstract: An apparatus and method for processing a substrate can reduce the concentration of process by-products in a chemical solution.

Abstract: A printed circuit board and a method of manufacturing the same are provided. The printed circuit board includes a wiring substrate including a plurality of insulating layers, a plurality of wiring layers, and a plurality of via layers and having a cavity penetrating through a portion of the plurality of insulating layers, a passive component disposed in the cavity and including an external electrode electrically connected to at least one of the plurality of wiring layers, and a bridge disposed on the passive component in the cavity and including one or more circuit layers electrically connected to the external electrode.

Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory devices may include a plurality of layers sequentially stacked on a substrate in a vertical direction, each of the plurality of layers including a bit line extending in a first direction and a semiconductor pattern extending from the bit line in a second direction traversing the first direction, a gate electrode extending through the plurality of layers and including a vertical portion extending through the semiconductor patterns and a first horizontal portion extending from the vertical portion and facing a first surface of one of the semiconductor patterns, and a data storing element electrically connected to the one of the semiconductor patterns. The data storing element includes a first electrode electrically connected to the one of the semiconductor patterns, a second electrode on the first electrode, and a dielectric layer between the first and second electrodes.

Abstract: A manufacturing method of a window includes providing a window including a first non-folding portion, a second non-folding portion, and a folding portion disposed between the first and second non-folding portions and irradiating a laser beam to a front surface of the folding portion of the window to form a first groove in the front surface of the folding portion. The first and second non-folding portions and the folding portion are arranged in the window in a first direction, first processing areas extending in a second direction intersecting the first direction and arranged in the first direction are defined in the front surface of the folding portion, and the laser beam is irradiated at least once to each of the first processing areas in the second direction.

Abstract: An apparatus for estimating contact distribution to quickly estimate contact spot distribution from a contact surface image using a deep learning model based on a convolution neural network (CNN) and a method thereof are disclosed. A method for estimating contact distribution to estimate contact spot distribution between a first contact spot and a second contact spot includes inputting a contact surface image of at least one of the first contact surface and the second contact surface to a deep learning model based on a CNN and estimating contact spot distribution between the first contact surface and the second contact surface from an output of the deep learning model.

Abstract: A display device includes a substrate, a butter layer and light emitting diodes. The substrate defines a first display area including a first pixel area and a transmission area and a second display area including a second pixel area and surrounding at least a portion of the first display area, and the substrate includes an adhesive layer through which a first opening overlapping the transmission area is defined. The buffer layer is disposed on the substrate, and a second opening overlapping the transmission area is defined through the buffer layer. The light emitting diodes are disposed on the buffer layer and overlap the first and second pixel areas.

Abstract: A display driver integrated circuit (IC) includes a data line driver that drives a first data line connected with a first pixel of a display in response to output image data, and a dithering circuit that receives a brightness value of the display, calculates a first reference grayscale value corresponding to the brightness value using a first group of threshold grayscale values, receives input image data with a first grayscale value, which corresponds to the first pixel, compares the first grayscale value and the first reference grayscale value, and generates the output image data having not the first grayscale value but an output grayscale value when the first grayscale value is smaller than the first reference grayscale value.

Abstract: Disclosed are a positive electrode additive material for a lithium secondary battery having an enhancement in atmospheric stability, a method for preparing the same, and a positive electrode for a lithium secondary battery including the same. The positive electrode material includes an core including a lithium component, and a coating layer formed on a surface of the core and including a compound having a formula of LiM?O3 wherein M? is Ta or Nb.

Abstract: There is provided a method of processing uplink Ethernet packets of an aggregation node included in a distributed antenna system, the method includes: receiving a plurality of uplink Ethernet packets; summing the plurality of received uplink Ethernet packets; and transmitting the summed uplink Ethernet packets in an uplink direction.

Abstract: Provided is a plated, ultra-low carbon steel sheet which has excellent strength, formability, and surface properties to allow for the weight lightness of automobiles and a manufacturing method therefor and, more specifically, to a galvanized steel sheet and a manufacturing method therefor, wherein the galvanized steel sheet has high strength and high formability and as such, can be suitably used as a material for an automobile outer body.

Abstract: Disclosed are a thin-film transistor and a method for manufacturing the same. The thin-film transistor includes: a substrate serving as a gate electrode; a gate insulating film formed on the substrate; a metal layer formed on the gate insulating film; a metal oxide layer formed on the metal layer and covering an entirety of a surface of the metal layer; a metal oxide semiconductor layer formed so as to cover an entirety of a surface of the metal oxide layer; and a source/drain electrode formed on the metal oxide semiconductor layer, wherein the thin-film transistor further comprises an oxygen depletion layer disposed in an area of the metal oxide semiconductor layer adjacent to the metal oxide layer, wherein the metal oxide semiconductor layer is obtained by crystallizing an amorphous metal oxide semiconductor layer under heat-treatment.

Abstract: A multilayer electronic component may include a first internal electrode layer including a first dielectric layer and first to fourth internal electrodes disposed to be spaced apart from each other on the first dielectric layer, a second internal electrode layer including a second dielectric layer and a fifth internal electrode disposed on the second dielectric layer, a body including a capacitance forming portion in which the first internal electrode layer and the second internal electrode layer are alternately disposed, a connection electrode penetrating through the first and second internal electrode layers, spaced apart from the first to fourth internal electrodes, and connected to the fifth internal electrode, first to fourth external electrodes disposed to be connected to the first to fourth internal electrodes, respectively, on the body, and a fifth external electrode disposed to be connected to the connection electrode on the body.

Abstract: A display device includes a display panel including a display area and a non-display area surrounding the display area, and a metal wiring layer disposed on at least a portion of the non-display area, an encapsulation substrate disposed on the display panel, a sealing member which is disposed between the display panel and the encapsulation substrate and bonds the display panel to the encapsulation substrate and a first fusion region provided in at least a partial region between the sealing member and the encapsulation substrate, where the first fusion region has no physical boundary, and where at least a portion of the sealing member is disposed on the metal wiring layer in the non-display area, and the first fusion region is separated from the metal wiring layer while overlapping the metal wiring layer in a thickness direction.

Abstract: An apparatus for measuring characteristics of a capacitor component includes a measurement terminal connected to a capacitor component, an inductor connected to the measurement terminal, and a controller generating characteristic information of the capacitor component based on LC resonance of the capacitor component and the inductor. The controller generates capacitance information of the capacitor component based on inductance, based on at least one of a resonant frequency and an amplitude of the LC resonance and the resonant frequency.

Abstract: A photonic integrated circuit embedded substrate may include: an embedded insulating layer on which a photonic integrated circuit is disposed, and at least one first insulating layer stacked on one surface of the embedded insulating layer. The at least one first insulating layer may have an optical path extending in a stacking direction of the at least one first insulating layer.