Abstract: An electronic component embedded substrate includes: an insulating material including a cavity formed in one surface thereof; a protective layer embedded in the insulating material and covering an entire bottom surface of the cavity; solders disposed on side surfaces of the cavity; and an electronic component disposed in the cavity and at least partially in contact with the solders, wherein the protective layer has a material different from that of the insulating material.

Abstract: The present disclosure relates to a method and an apparatus for federated learning of an artificial intelligence model. According to an exemplary embodiment of the present disclosure, a federated learning method of an artificial intelligence model includes: training a first local artificial intelligence model and a second local artificial intelligence model using data sets of a first client and a second client among the plurality of clients; calculating performance values for the first local artificial intelligence model and the second local artificial intelligence model by transmitting the first local artificial intelligence model to the second client and transmitting the second local artificial intelligence model to the first client; comparing the performance values to remove one of the first client and the second client; and training a global model using a client which is not removed.

Abstract: The present invention relates to an Agathobaculum sp. strain having prophylactic or therapeutic effects on autism spectrum disorders, and use thereof. When the intestinal microorganism Agathobaculum sp. strain of the present invention was orally administered to valproic acid (VPA)-induced autism model mice and BTBR autism model mice, the effects of remarkably improving autism spectrum disorders including repetitive behaviors, hyperactivity, social deficiency and cognitive/memory dysfunction of the mice were observed, as compared with a non-treated control. Accordingly, it may be usefully applied to foods, drugs, or feeds for preventing or treating autism spectrum disorders, and thus is very useful in the relevant industries.

Abstract: A collimator includes: a transmission pattern transmitting light; and a non-transmission layer disposed on at least one side surface of the transmission pattern. The non-transmission layer includes a low reflective metal material.

Abstract: A photopolymerizable resin composition includes a first layer and a second layer; and a barrier layer disposed between the first layer and the second layer, the barrier layer includes one or more of SiNx, SiOx, SiON, Mo, a Mo oxide, Cu, a Cu oxide, Al, an Al oxide, Ag, and a Ag oxide.

Abstract: A connection structure embedded substrate includes a printed circuit board including a first insulating body and a plurality of first wiring layers disposed on at least one of an external region or an internal region of the first insulating body; and a connection structure embedded in the first insulating body and including first and second substrates. The first and second substrates are disposed adjacent to each other.

Abstract: A semiconductor memory device includes a stack structure comprising a plurality of layers vertically stacked on a substrate, each layer including a semiconductor pattern, a gate electrode extending in a first direction on the semiconductor pattern, and a data storage element electrically connected to the semiconductor pattern, a plurality of vertical insulators penetrating the stack structure, the vertical insulators arranged in the first direction, and a bit line provided at a side of the stack structure and extending vertically. The bit line electrically connects the semiconductor patterns which are stacked. Each of the vertical insulators includes first and second vertical insulators adjacent to each other. The gate electrode includes a connection portion disposed between the first and second vertical insulators.

Abstract: Provided is a steel sheet having properties particularly suitable as a material of automotive external panels because bake hardenability and room-temperature aging resistance are excellent, and a method of manufacturing the steel sheet.

Abstract: A semiconductor memory device is disclosed. The device includes a peripheral circuit structure on a substrate, a semiconductor layer on the peripheral circuit structure, an electrode structure on the semiconductor layer, the electrode structure including electrodes stacked on the semiconductor layer, a vertical channel structure penetrating the electrode structure and being connected to the semiconductor layer, a separation structure penetrating the electrode structure, extending in a first direction, and horizontally dividing the electrode of the electrode structure into a pair of electrodes, an interlayered insulating layer covering the electrode structure, and a through contact penetrating the interlayered insulating layer and being electrically connected to the peripheral circuit structure.

Abstract: Provided are an Agathobaculum sp. strain having prophylactic or therapeutic effects on degenerative brain diseases, and use thereof. Since the intestinal microorganism Agathobaculum butyriciproducens SR79 strain of the present invention may have effects of inhibiting neuroinflammation and effects of improving movement regulation and cognitive and memory functions in animal models with degenerative brain diseases such as Parkinson's disease and Alzheimer's disease, the strain may be effectively used in foods, medicines, or feeds for preventing or treating brain diseases including Alzheimer's disease, Parkinson's disease, mild cognitive impairment, etc., and therefore, it is very useful in the relevant industries.

Abstract: An anhydrous fiber-dyeing apparatus using vacuum transfer, includes: a hollow drum in which a plurality of fine holes are formed to penetrate therethrough, and a fiber to be dyed are wound around an outer surface thereof; a transfer film covering the outer surface of the fiber wound around the drum and having an inner side surface coated with a dye; heating means heating the fiber wound around the drum; and a vacuum means suctioning air through an inner space of the drum to form a vacuum pressure through the fine holes of the drum.

Abstract: A three-dimensional out sole having a pattern having improved quality and durability has a dye permeated into the surface of the outsole. A depth to which the dye penetrating the micropores is 0.08 mm to 0.12 mm. The dye is permeated into the microspores through vacuum suction. The dye is digitally printed on a thermoplastic sheet. The thermoplastic sheet on which the dye is printed is heated to be softened with flexibility. The softened sheet having flexibility is closely attached to a surface of the shoe outsole having the three-dimensional shape through vacuum adsorption and then is permeated therein.

Abstract: A printed circuit board includes a first wiring structure including first insulating layers and first wiring layers; a second wiring structure disposed on the first wiring structure and including second insulating layers and second wiring layers; and a third wiring structure disposed on the second wiring structure and including a third insulating layer and a third wiring layer disposed on the third insulating layer. At least a portion of at least one of the second wiring layers has a fine pitch, relatively finer than those of the first wiring layers and the third wiring layer, wherein at least a portion of one of the first wiring layers is connected to at least a portion of the third wiring layer through a first wiring via, and wherein the first wiring via penetrates at least one of the first insulating layers, the second insulating layers, and the third insulating layer.

Abstract: A three-dimensional semiconductor device may include a substrate including a cell array region and a contact region, a stack structure including interlayer dielectric layers and gate electrodes, a source structure, and a mold structure between the substrate and the stack structure. First vertical channel structures are on the cell array region in vertical channel holes. Each of the first vertical channel structures may include a first barrier pattern, a data storage pattern, and a vertical semiconductor pattern, which are sequentially layered on an inner side surface of one of the vertical channel holes. The mold structure may include a first buffer insulating layer, a first semiconductor layer, a second buffer insulating layer, and a second semiconductor layer sequentially stacked on the substrate. The source structure may be in physical contact with a portion of a side surface of the vertical semiconductor pattern.

Abstract: A pouch type lithium secondary battery may include an electrode assembly to which an electrode tab is attached; a pouch which includes an aluminum layer and a sealant layer and which encases the electrode assembly so that a portion of the electrode tab is exposed therefrom; a protrusion formed by sealant on a side of the pouch where the electrode tab is not exposed, in melting and flowing toward the electrode assembly then congealing to form a swelling on the pouch; and folds formed by bending a side of the pouch where the electrode tab is not exposed, wherein at least one of the folds includes the protrusion.

Abstract: A semiconductor memory device includes a stack structure comprising a plurality of layers vertically stacked on a substrate, each layer including a semiconductor pattern, a gate electrode extending in a first direction on the semiconductor pattern, and a data storage element electrically connected to the semiconductor pattern, a plurality of vertical insulators penetrating the stack structure, the vertical insulators arranged in the first direction, and a bit line provided at a side of the stack structure and extending vertically. The bit line electrically connects the semiconductor patterns which are stacked. Each of the vertical insulators includes first and second vertical insulators adjacent to each other. The gate electrode includes a connection portion disposed between the first and second vertical insulators.

Abstract: The present disclosure relates to a printed circuit board. The printed circuit board includes: a plurality of insulating layers; a plurality of circuit layers disposed on at least one of an interior and an exterior of the plurality of insulating layers; and a reinforcing layer disposed on one surface of the plurality of insulating layers, and having a first opening having a first width and a second opening having a second width, different from the first width.

Abstract: An airbag control apparatus includes: an airbag, an airbag driver that deploys the airbag, and a processor that estimates a vehicle momentum and a crash progress degree based on a longitudinal acceleration and a vehicle speed upon a vehicle crash, determines deployment of the airbag based on the vehicle momentum and the crash progress degree and controls the airbag driver when the deployment of the airbag is determined.

Abstract: Discussed is a battery pack including a high voltage (HV) wire assembly and a method for manufacturing the battery pack. The battery pack and the method provides improvement in an efficiency of an assembly process of the battery pack, and improvement in a safety of the battery pack. The battery pack includes a battery pack including: a tray; a plurality of battery modules mounted on the tray; a battery pack cover configured to cover the plurality of battery modules; a high voltage (HV) wire assembly formed between the plurality of battery modules and the tray; and a low voltage (LV) wiring formed on an upper surface of the plurality of battery modules, wherein the HV wire assembly includes an insulating substrate, and a bus bar electrically connecting the plurality of battery modules.

Abstract: A semiconductor memory device is disclosed. The device includes a peripheral circuit structure on a substrate, a semiconductor layer on the peripheral circuit structure, an electrode structure on the semiconductor layer, the electrode structure including electrodes stacked on the semiconductor layer, a vertical channel structure penetrating the electrode structure and being connected to the semiconductor layer, a separation structure penetrating the electrode structure, extending in a first direction, and horizontally dividing the electrode of the electrode structure into a pair of electrodes, an interlayered insulating layer covering the electrode structure, and a through contact penetrating the interlayered insulating layer and being electrically connected to the peripheral circuit structure.