Abstract: A method of fabricating a semiconductor device including sequentially forming a polysilicon layer, a first insulating layer, and a photoresist layer over a gate oxide film positioned on a semiconductor substrate. A photoresist pattern with a first groove is formed by selectively patterning the photoresist layer to partially expose a surface of the first insulating layer. A second insulating layer is formed over the photoresist pattern with the first groove and over the exposed surface of the first insulating layer. A sacrificial spacer is formed on each inner wall of the first groove by etching back the second insulating layer and forming a second groove in the first insulating layer in communication with the first groove to expose a surface of the polysilicon layer at the bottom of the second groove. The photoresist pattern is removed, and an arbitrary layer pattern is formed over the polysilicon layer at the bottom of the second groove.

Abstract: After a silicidation blocking pattern is formed on a substrate including silicon, the silicidation blocking pattern is hardened by a thermal annealing process. The substrate is rinsed to remove a native oxide film formed on the substrate, and then a silicide film is formed on a portion of the substrate exposed by the silicidation blocking pattern. The silicide film can thus be formed in an exact portion of the substrate, and the substrate is not damaged during rinsing.

Abstract: A Local interconnection wiring structure method for forming the same reduces the likelihood of a short between a local interconnection layer of gate electrodes and an active region by forming a common aperture so as to have a determined aperture between the local interconnection layer and the active region on an insulation film of a semiconductor substrate. Methods of forming the local interconnection wire can include forming a first etching mask pattern that has a size longer than a length between inner ends of adjacent gate electrodes formed on a semiconductor substrate and covered with an insulation film. The etching mask simultaneously has a length the same as or shorter than the length between outer ends of the gate electrodes. The insulation film exposed in the first etching mask pattern is subsequently etched so that the insulation film remains higher than a highest height of the gate electrodes, so as to form a recess pattern.

Abstract: Etching compositions for selectively etching silicon germanium faster than other silicon containing compositions may be produced by controlling the ratios of de-ionized water used in the etching compositions with respect to the amounts of nitric acid, hydrofluoric acid, and/or acetic acid. Methods for selectively etching silicon germanium without damaging a silicon substrate or a silicon layer are possible using the etching compositions.

Abstract: A spin chuck for wafer processing includes: a rotary unit having a top surface adapted to receive and rotate a wafer; a plurality of wafer gripping units mounted on the rotary unit; a set of first gripping members; and a set of second gripping members. Each of the wafer gripping units has at least one of a first gripping member and a second gripping member that are configured to engage a wafer. The wafer gripping units are movable between first and second gripping positions, wherein in the first gripping position, the first gripping members are positioned to engage a wafer received on the rotary unit and the second gripping members are spaced apart from the wafer, and in the second gripping position, the second gripping members are positioned to engage the wafer, and the first gripping members are spaced apart from the wafer.

Abstract: An apparatus of drying semiconductor substrate using azeotrope effect and a drying method using the apparatus are provided. The apparatus includes a bath for storing a fluid, a chamber located above the bath and an apparatus for supplying an organic solvent onto the surface of the fluid in the bath for forming an azeotrope layer at the surface of the fluid and for forming an organic solvent layer over the azeotrope layer. The organic solvent layer and the atmosphere thereon are heated by a heater. The apparatus may further include a drying gas conduit for introducing a drying gas into the chamber.

Abstract: A method of cleaning damaged layers and polymer residue on semiconductor devices includes mixing HF and ozone water in a vessel to form a solution of HF and ozone water, and dipping a semiconductor device in the vessel containing the solution of HF and ozone water. Preferably, ozone water is subsequently introduced into the vessel to replace the solution of HF and ozone water in the vessel.

Abstract: An apparatus for collecting impurities on a semiconductor wafer includes an airtight process chamber, a rotary chuck disposed in the process chamber for rotating and horizontally supporting the semiconductor wafer, a first scanning unit for forming a droplet of a first scanning solution and for scanning an upper surface of the semiconductor wafer rotated by the rotary chuck with the droplet to collect first impurities, a driving unit for tilting the rotary chuck and the semiconductor wafer supported on the rotary chuck, and a second scanning unit for receiving a second scanning solution for collecting second impurities from an edge portion of the semiconductor wafer, the second scanning solution being in contact with the edge portion of the semiconductor wafer tilted by the driving unit and rotated by the rotary chuck so that the second scanning solution scans the edge portion of the semiconductor wafer.

Abstract: Contaminants are generated during etching processes for forming electrodes of storage capacitors for very high density future memory cells, such as ferroelectric random access memory (FeRAM) cells. These contaminants include significant quantities of noble metals, and in particular iridium and iridium compound particulates. In order to prevent undesirable iridium and iridium compound particulates from adversely affecting subsequent etching processes performed in the chamber, the plasma metal etch chamber is seasoned by exposing interior surfaces of the chamber to a seasoning plasma generated from a gas mixture comprising at least two gases selected from the group consisting of BCl3, HBr, and CF4. The chamber seasoning method of the invention is also applicable to etch processes involving other noble metals, such as platinum.

Abstract: A method of forming a contact hole of a semiconductor device that is able to prevent excessive etching of an interlayer dielectric pattern includes forming a gate pattern including a first insulation layer pattern, a conductive layer pattern, a capping insulation layer pattern, and a second insulation layer pattern on a substrate; forming a spacer using an insulating material on a sidewall of the gate pattern; forming an interlayer dielectric on the substrate on which the gate pattern and the spacer are formed; forming a contact hole and an interlayer dielectric pattern for exposing the substrate by etching the interlayer dielectric; forming a liner spacer on a sidewall of the spacer and the interlayer dielectric pattern; and cleaning the resultant structure using a cleaning solution. The cleaning solution preferably includes includes ozone water and hydrogen fluoride (HF).

Abstract: In a cleaning solution and a method of cleaning a semiconductor substrate, the cleaning solution includes about 1 to about 10 percent by weight of sulfuric acid, about 0.5 to about 5 percent by weight of aqueous hydrogen peroxide solution, and about 85 to about 98.5 percent by weight of hydrogen fluoric acid solution. Various polymers attached to a metal wiring formed on a substrate are removed by immersing the substrate into the cleaning solution. The substrate is rinsed to remove the cleaning solution remaining on the substrate. Thus, the polymers can be completely removed without damage to the metal wiring and an underlying oxide film.

Abstract: Cleaning solutions for integrated circuit devices and methods of cleaning integrated circuit devices using the same are disclosed. The cleaning solution includes about 30% aqueous ammonia solution, acetic acid by a volume percent higher then a volume percent of the aqueous ammonia solution, and deionized water by a volume percent higher then the volume percent of the acetic acid. Additionally, disclosed are methods wherein the cleaning solution is formed on integrated circuit substrates having an exposed metal pattern formed thereon, and further providing mega-sonic energy to the film of the cleaning solution.

Abstract: A wafer guide used in cleaning and/or drying processes of semiconductor wafers is provided. The wafer guide includes a horizontal support panel and at least three vertical panels attached on one surface of the support panel. Each of the vertical panels has a vertical body panel and a plurality of protrusions upwardly extended from a top surface of the vertical body panel. Gap regions between the protrusions act as slots for holding wafers. Sidewalls of the slots have a convex shaped profile when viewed from a top view, and bottom surfaces of the slots also have a convex shaped profile when viewed from a cross sectional view that crosses the vertical panels. Accordingly, contact areas between the wafers and the wafer guide are reduced to improve a drying efficiency of the wafers.

Abstract: An apparatus for drying a substrate using an isopropyl alcohol vapor includes a container for receiving an isopropyl alcohol vapor to dry a plurality of substrates wherein an opening is vertically formed through an upper portion of the container to permit the loading and unloading of the substrates; a supporting member for supporting the plurality of substrates in the container in a vertical direction and for supporting the substrates side by side in a horizontal direction, wherein the supporting member extends through the container and through the opening; and a cover for obstructing a flow of clean air from flowing directly from an air cleaner disposed over the container into the container through the opening. In addition, the apparatus may include an inert gas supplying member to supply an inert gas onto the substrates to prevent native oxide films from forming on the substrates.

Abstract: Disclosed is an organic stripping composition and a method of etching a semiconductor device in which the generation of an Si pitting phenomenon can be prevented. The composition includes a compound including a hydroxyl ion (OH−), a compound including a fluorine ion (F−) and a sufficient amount of an oxidizing agent to control the pH of the composition within the range of from about 6.5 to about 8.0. The method includes dry ethcing an oxide by a dry etching using a plasma, and then ashing the etched oxide using an ashing process to remove an organic material. The method further includes supplying the organic stripping composition to remove residues including any residual organic material, a metal polymer, and an oxide type polymer. The stripping composition is stable onto various metals and does not induce the Si pitting phenomenon.

Abstract: After a silicidation blocking pattern is formed on a substrate including silicon, the silicidation blocking pattern is hardened by a thermal annealing process. The substrate is rinsed to remove a native oxide film formed on the substrate, and then a silicide film is formed on a portion of the substrate exposed by the silicidation blocking pattern. The silicide film can thus be formed in an exact portion of the substrate, and the substrate is not damaged during rinsing.

Abstract: An apparatus for cleaning a semiconductor substrate has a chuck for rotatably supporting the semiconductor substrate, and a horizontally movable probe for applying ultrasonic vibrations uniformly to cleaning solution supplied onto an upper surface of the semiconductor substrate. The probe makes contact with the cleaning solution supplied and extends vertically from the upper surface of the substrate. The cross-sectional area of the probe gradually increases in a direction towards the semiconductor substrate so that the ultrasonic vibrations are widely distributed to the cleaning solution. The lower surface of the probe has surface features that act to disperse a reflected wavefront of the vibrational energy. Thus, patterns formed on the semiconductor substrate will not be damaged by the ultrasonic vibrations.

Abstract: An apparatus includes a chamber for containing a fluid, a guide seated in the chamber, and a transfer robot for loading and/or unloading a plurality of wafers to and/or from the guide. The wafers are located on the guide. The guide has a supporting member for supporting a wafer and a stopper member for preventing the wafer from being inclined over a predetermined range. The stopper member is in contact with a wafer edge disposed at a higher position than a wafer edge supported by the supporting member. A wafer guide has a stopper member to prevent adjacent wafers from being inclined and coming in contact with each other. Therefore, it is possible to suppress a poor drying such as water spots (or watermarks) produced when wafers are adhered to each other in a drying process.

Abstract: An apparatus of drying semiconductor substrate using azeotrope effect and a drying method using the apparatus are provided. The apparatus includes a bath for storing a fluid, a chamber located above the bath and an apparatus for supplying an organic solvent onto the surface of the fluid in the bath for forming an azeotrope layer at the surface of the fluid and for forming an organic solvent layer over the azeotrope layer. The organic solvent layer and the atmosphere thereon are heated by a heater. The apparatus may further include a drying gas conduit for introducing a drying gas into the chamber.

Abstract: An instantaneous pressure reducing heating and drying apparatus for an object, such as a wafer, includes a pressure reducing chamber; a vacuum pump for reducing a pressure in the pressure reducing chamber to below atmospheric pressure; a drying chamber installed within the pressure reducing chamber for drying the object that is loaded in the drying chamber; a pressure regulating valve installed in a wall of the drying chamber, wherein when the pressure regulating valve is opened a pressure in the drying chamber is instantaneously reduced to the pressure of the pressure reducing chamber; and a heating means for heating the drying chamber. In operation, the vacuum pump reduces a pressure of the pressure reducing chamber to below atmospheric pressure, and the pressure regulating valve installed in a wall of the drying chamber opens thereby instantaneously reducing the pressure the drying chamber to the reduced pressure of the pressure reducing chamber.