Abstract: A polishing endpoint detecting device of a polishing apparatus detects a polishing endpoint of a polishing process by measuring light reflected from a surface of a semiconductor substrate being polished. The apparatus also includes a polishing pad and a rotary plate each of a light-transmitting material. The light is directed onto the surface of the semiconductor substrate through the polishing pad and the rotary plate and is scanned across the surface of the semiconductor substrate along a horizontal line which passes through the centers of the polishing pad and the semiconductor substrate. A light-measuring instrument measures a characteristic of the light reflected from the surface of the semiconductor substrate, and a processor detects the polishing endpoint by analyzing signals produced by the light measuring instrument.

Abstract: A method of filling a contact hole of a semiconductor device preceded by dry cleaning for removing a damaged layer resulting from dry etching is provided. The method includes selectively exposing an underlying material layer by a dry etch and dry cleaning including passing plasma excited from a source gas over the exposed underlying material layer to remove the damaged layer formed from the dry etch. Subsequently, an electrically conductive layer with which to fill the contact hole is formed. The formation of the electrically conductive layer is performed in a separate chamber connected sequentially to a chamber for performing the dry cleaning to prevent the exposed underlying material layer inside the dry cleaned contact hole from being exposed to a source of contamination.

Abstract: A wafer guide for supporting at least one semiconductor wafer during a cleaning process, includes side panels having a plurality of side fixing grooves on an upper surface thereof for stabilizing the at least one semiconductor wafer and for maintaining a sufficient distance between a surface of the at least one semiconductor wafer and an adjacent surface; a center panel having a plurality of center fixing grooves on the upper surface thereof for supporting the at least one semiconductor wafer, each of the plurality of center fixing grooves having inner walls, wherein a contact line is formed on each of the inner walls of the center fixing grooves, and wherein the center panel is positioned between the pair of side panels; and a pair of fixing plates, one of the pair of fixing plates being fixedly attached at each end of the center panel and the pair of side panels.

Abstract: A method of cleaning damaged layers and polymer residue on semiconductor devices includes mixing HF and ozone water in a vessel to form a solution of HF and ozone water, and dipping a semiconductor device in the vessel containing the solution of HF and ozone water. Preferably, ozone water is subsequently introduced into the vessel to replace the solution of HF and ozone water in the vessel.

Abstract: Nonvolatile etch byproduct contaminants are generated during etching processes for forming electrodes of storage capacitors for very high density future memory cells, such as ferroelectric random access memory (FeRAM) cells. These contaminants include significant quantities of metals and metal compounds. In order to prevent undesirable metal etch byproduct particulates from adversely affecting subsequent etching processes performed in the chamber, the plasma metal etch chamber is seasoned by placing a substrate in the chamber, then exposing the substrate and interior surfaces of the chamber to a seasoning plasma generated from a source gas that includes at least one principal etchant gas used during an etch process which produced the nonvolatile etch byproducts. The method is performed at a substrate temperature that is equal to or greater than a substrate temperature at which the nonvolatile etch byproducts were produced.

Abstract: Contaminants are generated during etching processes for forming electrodes of storage capacitors for very high density future memory cells, such as ferroelectric random access memory (FeRAM) cells. These contaminants include significant quantities of noble metals, and in particular iridium and iridium compound particulates. In order to prevent undesirable iridium and iridium compound particulates from adversely affecting subsequent etching processes performed in the chamber, the plasma metal etch chamber is seasoned by exposing interior surfaces of the chamber to a seasoning plasma generated from a gas mixture comprising at least two gases selected from the group consisting of BCl3, HBr, and CF4. The chamber seasoning method of the invention is also applicable to etch processes involving other noble metals, such as platinum.

Abstract: A chemical supply system includes at least two supply pipes for supplying at least two different chemicals; a mixing unit connected to the supply pipes for mixing at least two different chemicals to form a chemical mixture, an exhausting unit for exhausing the chemical mixture externally; and a filtering unit provided between the mixing unit and the exhausting unit for filtering the chemical mixture to prevent chemical particles having more than a predetermined size from being exhausted.

Abstract: A cleaning solution for removing contaminants from the surface of an integrated circuit substrate includes a fluoride reducing agent, an organic acid containing a carboxyl group, an alkaline pH controller and water. The pH of the cleaning solution is 3.5-8.8. The cleaning solution is used at a low temperature, such as room temperature, which is lower than that for conventional cleaning solutions. Therefore, the cleaning solution does not evaporate. Furthermore, a cleaning method using the cleaning solution does not require a pre-ashing step to reinforce the cleaning agent, nor is an alcohol rinse step required. The cleaning solution is removed by rinsing with deionized water. Therefore, the cleaning method using the cleaning solution is quicker and less costly than conventional cleaning methods.

Abstract: Cleaning solutions for removing contaminants from semiconductor substrates are provided and include from about 0.08 to about 0.1 percent by weight of hydrogen fluoride; from about 0.5 to about 0.6 percent by weight of ammonium fluoride; from about 24.9 to about 49.7 percent by weight of hydrogen peroxide; and from about 49.6 to about 74.5 percent by weight of water.

Abstract: Methods for manufacturing a semiconductor device, in which a chamfered metal silicide layer is formed by a 2-stage continuous wet etching process using different etchants, thereby resulting in a sufficient insulation margin between a lower conductive layer including the metal silicide layer and the contact plug self-aligned with the lower conductive layer are disclosed. In the manufacture of a semiconductor device, a mask pattern is formed on a metal silicide layer to expose a portion of the metal silicide layer. The exposed portion of the metal silicide layer is isotropically etched in a first etchant to form a metal silicide layer with a shallow groove, and defects due to the silicon remaining on the surface of the metal silicide layer with the shallow groove are removed using a second etchant, to form a metal silicide layer with a smooth surface. Microelectronic structures produced by methods of the present invention are also disclosed.

Abstract: A valve cleaning apparatus and method provide for cleaning of heat resistant, scratch resistant coated valves using deionized water and at least one chemical mixture. The cleaning method includes sampling and analysis of the chemical mixture for the presence of metal impurities to within 0.5 to 1.5 ppb. Valves cleaned using this method and apparatus can then be transferred for use in semiconductor device fabrication equipment without the danger of metal impurities from the valves entering and damaging the fabrication equipment and the semiconductor devices being fabricated. The apparatus uses a single pumping device and a single return line, which are provided with selection devices to alternatively supply to or return from the valves either the deionized water or the chemical mixture. A plurality of same-sized or different-sized valves can be cleaned simultaneously.

Abstract: A chemical refining and reuse method and apparatus efficiently remove water from a waste chemical used in a semiconductor device fabrication process. The method is superior to conventional refining methods, in that water is removed at the end of the refining process, followed only by particle removal, so that water is not reintroduced into the waste chemical during metallic impurity removal. Therefore, the refined waste chemical has a percentage of water therein which is equal to that of the chemical in an initial raw state. The method includes: a) removing ionic impurities contained in the waste chemical; b) removing metallic impurities contained in the waste chemical after removing the ionic impurities; c) removing water contained in the waste chemical after removing the metallic impurities; and d) removing particles contained in the waste chemical after removing the water.

Abstract: Solutions useful for etching semiconductor devices comprise ammonium fluoride, hydrofluoric acid, hydrogen peroxide, and water. Processes for forming the solutions comprise mixing first solutions which comprise ammonium fluoride, hydrofluoric acid, and water with second solutions which comprise hydrogen peroxide and water to form the solutions of the invention. Methods for etching semiconductor devices comprise contacting the devices which comprise a substrate and oxide layer thereon with the solutions of the invention to etch the devices. The oxide layer, for example a damaged silicon oxide layer on a silicon substrate, is selectively etched to the substrate.

Abstract: Methods for manufacturing microelectronic using chemical mechanical polishing (CMP) comprises providing wafers wetted with deionized water mixtures having first pHs, and performing CMP on the wetted wafers while applying polishing slurries having second pHs thereto. In accordance with the invention, the first pHs are substantially equal to the second pHs.

Abstract: An apparatus and method for carrying wafers through a multi-step process for producing a semiconductor, without using a cassette, where the apparatus senses whether a wafer is mis-loaded. The apparatus includes a plurality of optical sensors positioned above the wafers for sensing whether a wafer is mis-loaded by transmitting light past circumferential edges of the wafers.

Abstract: A pretreatment system for analyzing impurities contained in a flat sample contains a cylindrical lower case having a stepped portion on which the flat sample is seated. The stepped portion is formed in an circumferential inner surface of the cylindrical lower case. A cylindrical upper case is detachably attached to an upper surface of the lower case, and has a supply passage through which a predetermined amount of pretreatment solution can be supplied to the flat sample. A cover closes off the upper surface of the upper case.

Abstract: An apparatus for drying semiconductor wafers using IPA (Isopropyl Alcohol) vapor includes a first chamber for producing the IPA vapor, and a second chamber connected to the first chamber through an IPA supply line, for receiving the IPA vapor and drying semiconductor wafers using the IPA vapor. With the drying apparatus, the first and second chambers are separated from each other, which allows the process steps of producing the IPA vapor and the drying the wafers to be separately performed. The drying apparatus thus prevents particles from being generated in the second chamber during the drying process. The wafers can be dried without a variation in temperature in the second chamber. The IPA vapor is exhausted from the second chamber by introducing nitrogen into the second chamber. As a result, the IPA vapor in the second chamber is not liquified and thereby leaves no substance to adhere to a contact portion between a wafer carrier and each wafer.

Abstract: In a phase synchronizing loop apparatus for digital audio signals, a clock operation is controlled in accordance with a plurality of audio data formats, allowing a data transmission clock to be generated using a phase synchronizing loop. The apparatus includes an edge detector for detecting an edge of applied data, a clock generator for retaining the signal from the edge detector for a predetermined period of time to generate a clock signal, first and second phase synchronizing loops for detecting a phase difference between the clock signal and the oscillation output of a voltage controlled oscillator, a controller for generating a control signal in accordance with the audio data formats, and a display for discriminating a synchronization state and displaying an indication thereof.