Abstract: A semiconductor device includes a memory string coupled between a common source line and a bit line, the memory string including at least one first selection transistor, a plurality of memory cells, and a plurality of second selection transistors. The semiconductor device also includes selection lines respectively coupled to the second selection transistors. The semiconductor device further includes a control logic circuit configured to float a first group of selection lines from among the selection lines at a first time and configured to float a second group of selection lines from among the selection lines at a second time different from the first time.

Abstract: The present invention relates to a method of separating rare earth elements from rare earth polishing powder waste by a hydrometallurgical process, the method comprising the steps of: synthesizing sodium rare-earth double sulfates by adding sulfuric acid and sodium hydroxide to the rare earth polishing powder waste; converting the sodium rare-earth double sulfates into rare earth hydroxides; and separating cerium (Ce), lanthanum (La), praseodymium (Pr), and neodymium (Nd) from the rare earth hydroxides by adding hydrochloric acid and sulfuric acid. The present invention makes it possible to recover 99% or more of rare earth elements, including cerium (Ce), lanthanum (La), praseodymium (Pr), and neodymium (Nd) from rare earth polishing powder waste, and enables the recovered rare earth elements to be recycled, thereby achieving great industrial economic benefits.

Abstract: Disclosed is a refrigerator including: a second main body including a second camera configured to photograph a second storage chamber; and a first main body including a first display provided on at least one side of the first main body, a first camera configured to photograph a first storage chamber, and a first controller allowing an image captured by the first camera and an image captured by the second camera to be displayed on the first display. The refrigerator allows information about stored contents stored in a plurality of main bodies to be displayed on a single display, and thus a user may easily manage the stored contents in the plurality of main bodies.

Abstract: An apparatus estimating a state of charge (SOC)-open circuit voltage (OCV) profile, including: a storage unit storing: a beginning of life (BOL) positive electrode (PE) half-cell SOC-OCV profile and available range (AR), a BOL negative electrode (NE) half-cell SOC-OCV profile and AR, and a BOL full-cell SOC-OCV profile and total capacity (TC), and a control unit estimating a full-cell SOC-OCV profile at middle of life (MOL), including: an AR determination module for: calculating an MOL full-cell TC while a secondary battery is fully charged/discharged at MOL, and determining the MOL PE and NE ARs so a ratio of the MOL to the BOL full-cell TCs equals a ratio of the MOL to the BOL PE ARs and a ratio of the MOL to the BOL NE ARs, and a profile management module for: estimating, as an MOL full-cell SOC-OCV profile, a differential profile, and updating the BOL full-cell SOC-OCV profile.

Abstract: The present invention provides a battery cell including: an electrode assembly including an electrode tab protruding toward at least one external side; a battery case including a receiving portion on which the electrode assembly is received; and an electrode lead connected to the electrode tab to be connected to an external device, wherein the electrode lead may include: a tab connecting portion electrically connected to the electrode tab; and a protruding extension protruding outside of the battery case in a state of extending from the tab connecting portion to be electrically connected to the external device, and the tab connecting portion may be formed so that a length of a width direction perpendicular to a protruding direction of the electrode tab may be relatively larger than that of the electrode tab.

Abstract: A method of manufacturing a high loading electrode, which prevents the phenomenon of the binder being lifted, does not cause drying of the electrode slurry, and does not cause damage of the electrode layer and reduction of the electrode strength at the corners in the punching is provided. The method of manufacturing the high loading electrode includes applying an electrode slurry on a release film to thereby produce an electrode layer having the release film attached thereto, punching the electrode layer having the release film attached thereto to provide a plurality of punched electrode layers, each punched electrode layer having a size of a unit electrode, separating and removing the release film from the punched electrode layers, and stacking and rolling at least two punched electrode layers on a current collector.

Abstract: The present invention provides an electrode assembly in which a plurality of unit cells are disposed, wherein one of the unit cells comprises: a first double-sided electrode in which a slurry is on opposite surfaces of a first collector; a separator adjacent to the first double-sided electrode; a second double-sided electrode adjacent to the separator and in which a slurry is on opposite surfaces of a second collector; and a single-sided electrode adjacent to the second double-sided electrode and in which the slurry is only on one surface of a third collector, the one surface facing the second double-sided electrode, the single-sided electrode having a coating layer on the slurry thereof, the coating layer preventing contact between the slurry of the single-sided electrode and the slurry on one of the surfaces of the second collector that faces the single-sided electrode, the coating layer allowing ions to pass therethrough.

Abstract: Disclosed herein is a battery cell including: an electrode assembly including an electrode tab protruding toward at least one outer periphery; a battery case including an accommodation part in which the electrode assembly is mounted; and an electrode lead connected to the electrode tab for electrical connection with an external device, wherein the electrode lead includes: a tab connection part electrically connected to the electrode tab; and a protrusion extension part extended from the tab connection part and protruding outwardly of the battery case to thereby be electrically connected to the external device, the tab connection part being coated with a gas adsorbent.

Abstract: A semiconductor device includes a memory string coupled between a common source line and a bit line, the memory string including at least one first selection transistor, a plurality of memory cells, and a plurality of second selection transistors. The semiconductor device also includes selection lines respectively coupled to the second selection transistors. The semiconductor device further includes a control logic circuit configured to float a first group of selection lines from among the selection lines at a first time and configured to float a second group of selection lines from among the selection lines at a second time different from the first time.

Abstract: Provided is a flexible heat sink for a flexible thermoelectric device including a first metal thin film; a phase change layer including a highly conductive foam formed on the first metal thin film and a phase change material filling pores of the highly conductive foam; and a second metal thin film formed on the phase change layer. The flexible heat sink for a flexible thermoelectric device has excellent flexibility, a high heat absorption rate, and a small size for heat sinking performance.

Abstract: A red light emitting device, a method of fabricating a light emitting device, a light emitting device package, and a lighting system are provided. The red light emitting device may include a first semiconductor layer having a first conductivity, an active layer provided on the first semiconductor layer and including a quantum well and a quantum barrier, a second semiconductor layer having a second conductivity and provided on the active layer, a third semiconductor layer having the second conductivity on the second semiconductor layer, a fourth semiconductor layer having the second conductivity on the third semiconductor layer, and a fifth semiconductor layer having the second conductivity on the fourth semiconductor layer. The third semiconductor layer and the fourth semiconductor layer may include an AlGaInP-based semiconductor layer, and an Al composition of the fourth semiconductor layer may be lower than an Al composition of the third semiconductor layer.

Abstract: A red light emitting device, a fabricating method of the light emitting device, a light emitting device package and a lighting system are provided. The red light emitting device according to an embodiment may include a first conductive type first semiconductor layer 112; an active layer 114 on the first conductive type first semiconductor layer 112; a second conductive type third semiconductor layer 116 on the active layer 114; a second conductive type fourth semiconductor layer 124 on the second conductive type third semiconductor layer 116; and a second conductive type fifth semiconductor layer 125 on the second conductive type fourth semiconductor layer 124. The second conductive type fifth semiconductor layer 125 may include a superlattice structure of a GaP layer 125a/InxGa1-xP layer (0?x?1) 125b.

Abstract: The present invention provides a battery cell including: an electrode assembly including an electrode tab protruding toward at least one external side; a battery case including a receiving portion on which the electrode assembly is received; and an electrode lead connected to the electrode tab to be connected to an external device, wherein the electrode lead may include: a tab connecting portion electrically connected to the electrode tab; and a protruding extension protruding outside of the battery case in a state of extending from the tab connecting portion to be electrically connected to the external device, and the tab connecting portion may be formed so that a length of a width direction perpendicular to a protruding direction of the electrode tab may be relatively larger than that of the electrode tab.

Abstract: The present invention provides a curing die for manufacturing a gel polymer electrolyte, and a method for manufacturing a gel polymer battery cell by using the same, the curing die comprising: a first die having a recessed part, which is formed inside a battery case and has a processing battery cell mounted therein and including an electrode assembly and a composition for forming the gel polymer electrolyte; and a second die coupled to the first die so as to seal the processing battery cell mounted in the recessed part.

Abstract: Disclosed herein is a battery cell including: an electrode assembly including an electrode tab protruding toward at least one outer periphery; a battery case including an accommodation part in which the electrode assembly is mounted; and an electrode lead connected to the electrode tab for electrical connection with an external device, wherein the electrode lead includes: a tab connection part electrically connected to the electrode tab; and a protrusion extension part extended from the tab connection part and protruding outwardly of the battery case to thereby be electrically connected to the external device, the tab connection part being coated with a gas adsorbent.

Abstract: The present invention relates to a method of separating rare earth elements from rare earth polishing powder waste by a hydrometallurgical process, the method comprising the steps of: synthesizing sodium rare-earth double sulfates by adding sulfuric acid and sodium hydroxide to the rare earth polishing powder waste; converting the sodium rare-earth double sulfates into rare earth hydroxides; and separating cerium (Ce), lanthanum (La), praseodymium (Pr), and neodymium (Nd) from the rare earth hydroxides by adding hydrochloric acid and sulfuric acid. The present invention makes it possible to recover 99% or more of rare earth elements, including cerium (Ce), lanthanum (La), praseodymium (Pr), and neodymium (Nd) from rare earth polishing powder waste, and enables the recovered rare earth elements to be recycled, thereby achieving great industrial economic benefits.

Abstract: A red light emitting device, a fabricating method of the light emitting device, a light emitting device package and a lighting system are provided. The red light emitting device according to an embodiment may include a first conductive type first semiconductor layer 112; an active layer 114 on the first conductive type first semiconductor layer 112; a second conductive type third semiconductor layer 116 on the active layer 114; a second conductive type fourth semiconductor layer 124 on the second conductive type third semiconductor layer 116; and a second conductive type fifth semiconductor layer 125 on the second conductive type fourth semiconductor layer 124. The second conductive type fifth semiconductor layer 125 may include a superlattice structure of a GaP layer 125a/InxGa1-xP layer (0?x?1) 125b.

Abstract: Semiconductor devices are provided including a substrate defining a gate trench. A buried gate structure is provided in the gate trench and at least fills the gate trench. The buried gate structure includes a gate insulation layer pattern, a gate electrode and a capping layer pattern. First and second impurity regions are provided at portions of the substrate adjacent to the buried gate structure, respectively. At least a portion of each of the first and second impurity regions face a sidewall of the buried gate structure. First and second buried contact structures are provided on the first and second impurity regions, respectively. Each of the first and second buried contact structures includes a metal silicide pattern and a metal pattern, and at least a portion of each of the first and second buried contact structures face to a sidewall of the buried gate structure.

Abstract: A red light emitting device, a method of fabricating a light emitting device, a light emitting device package, and a lighting system are provided. The red light emitting device may include a first semiconductor layer having a first conductivity, an active layer provided on the first semiconductor layer and including a quantum well and a quantum barrier, a second semiconductor layer having a second conductivity and provided on the active layer, a third semiconductor layer having the second conductivity on the second semiconductor layer, a fourth semiconductor layer having the second conductivity on the third semiconductor layer, and a fifth semiconductor layer having the second conductivity on the fourth semiconductor layer. The third semiconductor layer and the fourth semiconductor layer may include an AlGaInP-based semiconductor layer, and an Al composition of the fourth semiconductor layer may be lower than an Al composition of the third semiconductor layer.

Abstract: Semiconductor devices are provided including a substrate defining a gate trench. A buried gate structure is provided in the gate trench and at least fills the gate trench. The buried gate structure includes a gate insulation layer pattern, a gate electrode and a capping layer pattern. First and second impurity regions are provided at portions of the substrate adjacent to the buried gate structure, respectively. At least a portion of each of the first and second impurity regions face a sidewall of the buried gate structure. First and second buried contact structures are provided on the first and second impurity regions, respectively. Each of the first and second buried contact structures includes a metal silicide pattern and a metal pattern, and at least a portion of each of the first and second buried contact structures face to a sidewall of the buried gate structure.