Abstract: A red light emitting device, a fabricating method of the light emitting device, a light emitting device package and a lighting system are provided. The red light emitting device according to an embodiment may include a first conductive type first semiconductor layer 112; an active layer 114 on the first conductive type first semiconductor layer 112; a second conductive type third semiconductor layer 116 on the active layer 114; a second conductive type fourth semiconductor layer 124 on the second conductive type third semiconductor layer 116; and a second conductive type fifth semiconductor layer 125 on the second conductive type fourth semiconductor layer 124. The second conductive type fifth semiconductor layer 125 may include a superlattice structure of a GaP layer 125a/InxGa1-xP layer (0?x?1) 125b.

Abstract: The present invention provides a curing die for manufacturing a gel polymer electrolyte, and a method for manufacturing a gel polymer battery cell by using the same, the curing die comprising: a first die having a recessed part, which is formed inside a battery case and has a processing battery cell mounted therein and including an electrode assembly and a composition for forming the gel polymer electrolyte; and a second die coupled to the first die so as to seal the processing battery cell mounted in the recessed part.

Abstract: The present invention provides a battery cell including: an electrode assembly including an electrode tab protruding toward at least one external side; a battery case including a receiving portion on which the electrode assembly is received; and an electrode lead connected to the electrode tab to be connected to an external device, wherein the electrode lead may include: a tab connecting portion electrically connected to the electrode tab; and a protruding extension protruding outside of the battery case in a state of extending from the tab connecting portion to be electrically connected to the external device, and the tab connecting portion may be formed so that a length of a width direction perpendicular to a protruding direction of the electrode tab may be relatively larger than that of the electrode tab.

Abstract: Disclosed herein is a battery cell including: an electrode assembly including an electrode tab protruding toward at least one outer periphery; a battery case including an accommodation part in which the electrode assembly is mounted; and an electrode lead connected to the electrode tab for electrical connection with an external device, wherein the electrode lead includes: a tab connection part electrically connected to the electrode tab; and a protrusion extension part extended from the tab connection part and protruding outwardly of the battery case to thereby be electrically connected to the external device, the tab connection part being coated with a gas adsorbent.

Abstract: The present invention relates to a method of separating rare earth elements from rare earth polishing powder waste by a hydrometallurgical process, the method comprising the steps of: synthesizing sodium rare-earth double sulfates by adding sulfuric acid and sodium hydroxide to the rare earth polishing powder waste; converting the sodium rare-earth double sulfates into rare earth hydroxides; and separating cerium (Ce), lanthanum (La), praseodymium (Pr), and neodymium (Nd) from the rare earth hydroxides by adding hydrochloric acid and sulfuric acid. The present invention makes it possible to recover 99% or more of rare earth elements, including cerium (Ce), lanthanum (La), praseodymium (Pr), and neodymium (Nd) from rare earth polishing powder waste, and enables the recovered rare earth elements to be recycled, thereby achieving great industrial economic benefits.

Abstract: A red light emitting device, a fabricating method of the light emitting device, a light emitting device package and a lighting system are provided. The red light emitting device according to an embodiment may include a first conductive type first semiconductor layer 112; an active layer 114 on the first conductive type first semiconductor layer 112; a second conductive type third semiconductor layer 116 on the active layer 114; a second conductive type fourth semiconductor layer 124 on the second conductive type third semiconductor layer 116; and a second conductive type fifth semiconductor layer 125 on the second conductive type fourth semiconductor layer 124. The second conductive type fifth semiconductor layer 125 may include a superlattice structure of a GaP layer 125a/InxGa1-xP layer (0?x?1) 125b.

Abstract: Semiconductor devices are provided including a substrate defining a gate trench. A buried gate structure is provided in the gate trench and at least fills the gate trench. The buried gate structure includes a gate insulation layer pattern, a gate electrode and a capping layer pattern. First and second impurity regions are provided at portions of the substrate adjacent to the buried gate structure, respectively. At least a portion of each of the first and second impurity regions face a sidewall of the buried gate structure. First and second buried contact structures are provided on the first and second impurity regions, respectively. Each of the first and second buried contact structures includes a metal silicide pattern and a metal pattern, and at least a portion of each of the first and second buried contact structures face to a sidewall of the buried gate structure.

Abstract: A red light emitting device, a method of fabricating a light emitting device, a light emitting device package, and a lighting system are provided. The red light emitting device may include a first semiconductor layer having a first conductivity, an active layer provided on the first semiconductor layer and including a quantum well and a quantum barrier, a second semiconductor layer having a second conductivity and provided on the active layer, a third semiconductor layer having the second conductivity on the second semiconductor layer, a fourth semiconductor layer having the second conductivity on the third semiconductor layer, and a fifth semiconductor layer having the second conductivity on the fourth semiconductor layer. The third semiconductor layer and the fourth semiconductor layer may include an AlGaInP-based semiconductor layer, and an Al composition of the fourth semiconductor layer may be lower than an Al composition of the third semiconductor layer.

Abstract: Semiconductor devices are provided including a substrate defining a gate trench. A buried gate structure is provided in the gate trench and at least fills the gate trench. The buried gate structure includes a gate insulation layer pattern, a gate electrode and a capping layer pattern. First and second impurity regions are provided at portions of the substrate adjacent to the buried gate structure, respectively. At least a portion of each of the first and second impurity regions face a sidewall of the buried gate structure. First and second buried contact structures are provided on the first and second impurity regions, respectively. Each of the first and second buried contact structures includes a metal silicide pattern and a metal pattern, and at least a portion of each of the first and second buried contact structures face to a sidewall of the buried gate structure.

Abstract: Disclosed is an apparatus for controlling an AV device, comprising a web browser receiving a structured document to contain a script from the AV device, and providing the same to a user, and a first program module including a function called by the script and transmitting information on a device control command to the AV device through a protocol previously defined by use of the function, wherein the AV device comprises a web server module transmitting the structured document and a second program module receiving the device control command information from the first program module through the protocol and controlling the AV device in response to the command information.

Abstract: Disclosed is a pump safety device for various containers which makes it possible to freely adjust a discharge amount of contents from a container and to securely fix a pump in such as way to install an adjusting member and a safety pin at a pump for various containers which are used to contain cosmetics, shampoo and kitchen rinses. The pump safety device for various containers comprises a female screw part which is provided at an inner side of the cap; and an adjusting member which is engaged to the female screw part of the cap and is installed at the top of the cap and is capable of adjusting upward or downward.

Abstract: Provided is a radio frequency identification (RFID) tag including: a pattern layer which includes a first conductor having a pattern and an RFID chip electrically connected to the first conductor; an insulating layer which insulates the pattern layer from the radiation layer; a radiation layer which is attached to the insulating layer, and includes a second conductor having a radiation pattern inductively coupled to the first conductor; a lower protection layer disposed below a combination of the pattern layer, the insulating layer and the radiation layer; and an upper protection layer disposed above the combination of the pattern layer, the insulating layer and the radiation layer.

Abstract: Provided are an authentication method that includes connecting an optical disc drive (ODD) for driving a medium and a host device for reproducing contents stored in the medium using an interface. An authentication for reproducing the contents is performed by mutually exchanging data between the host device and the ODD via the authentication area of the ODD for storing the data. Accordingly, the ODD may convert a file from the optical disc, which is in an intrinsic format, into a format that is recognizable by a host device.

Abstract: A semiconductor device includes a first semiconductor layer extending in a first direction on a substrate, a plurality of second semiconductor layers spaced apart in the first direction on the first semiconductor layer, and an insulation layer structure surrounding side walls of the first semiconductor layer and the plurality of second semiconductor layers. The first semiconductor layer may have a first conductivity type, and the plurality of second semiconductor layers may have a second conductivity type.

Abstract: A method of manufacturing a semiconductor device, including forming a molding layer; forming a damascene mask layer and mask layer on the molding layer; forming a mask layer pattern by etching the mask layer; forming a damascene pattern by partially etching the damascene mask layer; forming a damascene mask layer on the mask layer pattern to bury the damascene pattern; forming a damascene pattern partially overlapping the damascene pattern by etching the damascene mask layer and the mask layer pattern; connecting the damascene pattern and the damascene pattern by removing a portion of the mask layer pattern exposed by the damascene pattern; forming a damascene mask layer on the damascene mask layer to bury the damascene pattern; and forming a trench under the damascene patterns by etching the damascene mask layers and the molding layer using remaining portions of the mask layer pattern.

Abstract: A mobile terminal is provided that includes a first camera to obtain a first image of an object, and a second camera to obtain a second image of an object, the second camera being separated from the first camera by a distance d. The mobile terminal also includes a controller to determine the distance d between the first camera and the second camera when the first camera obtains the first image of the object at a same time that the second camera obtains the second image. Still further, the mobile terminal includes a varying device to allow the distance d between the first camera and the second camera to vary, and a display to display a combination of the first image and the second image to allow a perceived three-dimensional (3D) image of the object.

Abstract: A method of manufacturing a semiconductor device, including forming a molding layer; forming a damascene mask layer and mask layer on the molding layer; forming a mask layer pattern by etching the mask layer; forming a damascene pattern by partially etching the damascene mask layer; forming a damascene mask layer on the mask layer pattern to bury the damascene pattern; forming a damascene pattern partially overlapping the damascene pattern by etching the damascene mask layer and the mask layer pattern; connecting the damascene pattern and the damascene pattern by removing a portion of the mask layer pattern exposed by the damascene pattern; forming a damascene mask layer on the damascene mask layer to bury the damascene pattern; and forming a trench under the damascene patterns by etching the damascene mask layers and the molding layer using remaining portions of the mask layer pattern.

Abstract: Disclosed are a radio frequency identification (RFID) tag and an RFID tag antenna thereof. The RFID tag antenna includes an antenna pattern which includes: a chip matching pattern which is disposed at a middle portion of the tag antenna, forms a closed loop, and is electrically connected to a chip; a first ejector pattern which is connected to a first side of the chip matching pattern; and a second ejector pattern which is connected to a second side of the chip matching pattern, wherein the first and second ejector patterns are symmetric with respect to the chip matching pattern, and the chip matching pattern includes a gap in the closed loop.

Abstract: Provided are a method of forming a contact and a method of manufacturing a phase change memory device using the same. The method of forming a contact includes forming on a substrate an insulating layer pattern having first sidewalls extending in a first direction and second sidewalls extending in a second direction perpendicular to the first direction and which together delimit contact holes, forming semiconductor patterns in lower parts of the contact holes, forming isolation spacers on the semiconductor pattern and side surfaces of the first sidewalls to expose portions of the semiconductor patterns, and etching the exposed portions of the semiconductor patterns using the isolation spacers as a mask to divide the semiconductor patterns into a plurality of finer semiconductor patterns.

Abstract: Provided are an authentication method that includes connecting an optical disc drive (ODD) for driving a medium and a host device for reproducing contents stored in the medium using an interface. An authentication for reproducing the contents is performed by mutually exchanging data between the host device and the ODD via the authentication area of the ODD for storing the data. Accordingly, the ODD may convert a file from the optical disc, which is in an intrinsic format, into a format that is recognizable by a host device.