Abstract: A secondary battery includes an electrode assembly having a positive electrode provided with a positive electrode tab, a separator, and a negative electrode provided with a negative electrode tab, the positive electrode, the separator, and the negative electrode being wound, the electrode assembly having a core part at a center thereof; a can configured to receive the electrode assembly therein, the negative electrode tab being connected to the can; a cap assembly coupled to an opening of the can, the positive electrode tab being connected to the cap assembly; and a reinforcing member provided on an end of the separator exposed beyond the positive electrode or the negative electrode to prevent heat of the positive electrode tab or the negative electrode tab from being transferred to the separator.

Abstract: The present disclosure provides a magazine supporting equipment for supporting a magazine with multiple input ports. The magazine supporting equipment comprises a contact plate, a first sidewall plate, and a second sidewall plate. The contact plate is in contact with the magazine. The first sidewall plate extends vertically from one end of the contact plate. The second sidewall plate parallel is to the first sidewall plate and extends vertically from one end to the other end of the contact plate. The first sidewall plate extends along at least a part of a first sidewall of the magazine. The second sidewall plate extends along at least a part of a second sidewall of the magazine. The first sidewall plate and the second sidewall plate include control openings through which gas flows in and out.

Abstract: A display device includes: a display panel including a first non-folding region, a second non-folding region, and a folding region disposed between the first non-folding region and the second non-folding region; and a lower member disposed below the display panel. The lower member includes: a digitizer disposed below the display panel and including a base layer and a plurality of coils disposed on one surface of the base layer; and a functional layer disposed below the digitizer, where the functional layer contains MXene.

Abstract: A display device includes a display panel having a folding axis extending in a first direction; and a panel supporter disposed on a surface of the display panel. The panel supporter includes a first layer including a first base resin and first fiber yarns extending in the first direction and dispersed in the first base resin, a second layer disposed on the first layer, the second layer including a second base resin and second fiber yarns extending in a second direction intersecting the first direction and dispersed in the second base resin, and a third layer disposed on the second layer, the third layer including a third base resin and third fiber yarns extending in the first direction and dispersed in the third base resin.

Abstract: A semiconductor device including a substrate includes an active region. A bit line structure extends across the active region. A landing pad is disposed on an end portion of the active region. A first spacer is disposed between the bit line structure and the landing pad. A second spacer is disposed between the first spacer and the landing pad. An air spacer is disposed between the first spacer and the second spacer. A capping pattern is disposed between a sidewall of the landing pad and a sidewall of the bit line structure. The capping pattern defines a top surface of the air spacer and comprises a metallic material.

Abstract: A display device includes a display panel having a front surface where images are displayed; a rear-side layer disposed on a rear surface of the display panel, including a plurality of conductive patterns and having first surface unevenness on a front surface thereof; and a support plate disposed between the display panel and the rear-side layer and having a flat surface on a front surface thereof. The support plate includes glass or ceramic.

Abstract: Provided are a semiconductor memory device and a method of fabricating the same. The semiconductor memory device may include: a first impurity doped region and a second impurity doped region spaced apart from each other in a semiconductor substrate, a bit line electrically connected to the first impurity doped region and crossing over the semiconductor substrate, a storage node contact electrically connected to the second impurity doped region, a first spacer and a second spacer disposed between the bit line and the storage node contact, and an air gap region disposed between the first spacer and the second spacer. The first spacer may cover a sidewall of the bit line, and the second spacer may be adjacent to the storage node contact. A top end of the first spacer may have a height higher than a height of a top end of the second spacer.

Abstract: An electronic device includes a display layer and a support part disposed under the display layer. The support part includes a first support portion having first and second surfaces defined thereon, and a second support portion facing the second surface. The first support portion includes a first material, the first surface faces the display layer, and the first surface is closer to the display layer than the second surface is. The second support portion includes a second material different from the first material. The first material includes glass fiber reinforced plastic.

Abstract: A window coating jig includes: a base part and a stage which includes a support part, a first sidewall part surrounding the support part and defining an outer wall, and a second sidewall part disposed between the support part and the first sidewall part, and protrudes from the base part, wherein a blow groove is defined between the first sidewall part and the second sidewall part, a suction groove is defined between the second sidewall part and the support part, the base part has a blow hole and a suction hole passing through the base part, the blow hole and the suction hole being defined therein, the blow hole overlaps the blow groove, the suction hole overlaps the suction groove, and the first sidewall part has a vent opening passing therethrough in a direction crossing the direction in which the blow hole extends, the vent opening being defined therein.

Abstract: A stage includes a bottom portion, a plurality of support portions extending in a first direction and spaced apart from each other in a second direction crossing the first direction, a plurality of blocks coupled with the support portions, respectively, and a plurality of porous films covering upper surfaces of the blocks, respectively.

Abstract: According to some embodiments, a semiconductor device may include gate structures on a substrate; first and second impurity regions formed in the substrate and at both sides of each of the gate structures; conductive line structures provided to cross the gate structures and connected to the first impurity regions; and contact plugs connected to the second impurity regions, respectively. For each of the conductive line structures, the semiconductor device may include a first air spacer provided on a sidewall of the conductive line structure; a first material spacer provided between the conductive line structure and the first air spacer; and an insulating pattern provided on the air spacer. The insulating pattern may include a first portion and a second portion, and the second portion may have a depth greater than that of the first portion and defines a top surface of the air spacer.

Abstract: Disclosed are an image processing method and an apparatus for performing the same. An image processing method according to one embodiment comprises the steps of: acquiring information about sensing a user; and displaying a back-projection image obtained by back-projecting at least one object that is visible through a transparent flat plate onto the transparent flat plate on the basis of the information.

Abstract: A method of fabricating a semiconductor device. A cell area and a core area is defined in a substrate. A bit line structure disposed in the cell area is provided. A gate structure disposed in the core area is provided, and a core capping film disposed on the gate structure is provided. A height of the core capping film is greater than a height of the bit line structure. A first contact film is formed on the bit line structure. A second contact film is formed on the core capping film. A mask is formed on the first contact film. An upper surface of the core capping film is exposed using the mask. The first contact film is etched until a height of the first contact film becomes less than a height of the bit line structure using an etching process. In the etching process, an etching rate for the first contact film is greater than etching rates for the bit line structure and the core capping film.

Abstract: Disclosed are an interfacing method and an apparatus for three-dimensional (3D) sketch. According to an example embodiment, the interfacing method for sketching in a virtual space of three dimensions includes determining a surface including an area in which a first user input is received in the virtual space to be a region of interest, controlling a position of the region of interest in the virtual space based on a second user input on the region of interest, and generating at least one sketch line belonging to the region of interest based on a third user input.

Abstract: A method of fabricating a semiconductor device. A cell area and a core area is defined in a substrate. A bit line structure disposed in the cell area is provided. A gate structure disposed in the core area is provided, and a core capping film disposed on the gate structure is provided. A height of the core capping film is greater than a height of the bit line structure. A first contact film is formed on the bit line structure. A second contact film is formed on the core capping film. A mask is formed on the first contact film. An upper surface of the core capping film is exposed using the mask. The first contact film is etched until a height of the first contact film becomes less than a height of the bit line structure using an etching process. In the etching process, an etching rate for the first contact film is greater than etching rates for the bit line structure and the core capping film.

Abstract: A display device includes a display panel having a front surface where images are displayed; a rear-side layer disposed on a rear surface of the display panel, including a plurality of conductive patterns and having first surface unevenness on a front surface thereof; and a support plate disposed between the display panel and the rear-side layer and having a flat surface on a front surface thereof. The support plate includes glass or ceramic.

Abstract: An electronic device includes a display module, and a support plate disposed under the display module and comprising reinforced fibers having long axes arranged in parallel to a direction. The electronic device is divided into a folding area foldable with respect to a folding axis extending in the direction, and a non-folding area adjacent to the folding area.

Abstract: A display device includes a display module and a support plate disposed on the display module and including a plurality of first fibers and a plurality of second fibers disposed on the first fibers and extending to cross the first fibers in a plan view. An opening is defined in the support plate and includes first sides parallel to an extension direction of the first fibers and facing each other and second sides parallel to an extension direction of the second fibers and facing each other.

Abstract: A foldable display device includes a display module including a first non-folding portion, a second non-folding portion, and a first folding portion between the first non-folding portion and the second non-folding portion, a first support member on a lower surface of the display module, the first support member including a first support portion supporting the first non-folding portion, a second support portion supporting the second non-folding portion, and a first opening pattern overlapping the first folding portion, and including a glass material, and a second support member under the first support member and supporting the display module.

Abstract: When a three-dimensional image of a specific subject is acquired by means of an infrared camera and an external light (for example, external light such as sunlight at the time of outdoor photography) having a relatively large intensity exists, it is difficult to acquire the image. To this end, the present invention proposes an electronic device for reducing a current peak by adaptively changing optical power and an exposure time of an infrared camera according to the intensity of external light.