Abstract: A display may have a liquid crystal layer sandwiched between a thin-film transistor layer and a color filter layer. An upper polarizer may be placed on top of the thin-film transistor layer. A lower polarizer may be placed under the color filter layer. Components may be bonded to bond pads on the inner surface of the thin-film transistor layer using anisotropic conductive film. Bond quality may be assessed by probing probe pads that are coupled to the bond pads or by visually inspecting the bond pads through the thin-film transistor layer. Opaque masking material in the inactive area may be provided with openings to accommodate the bond pads. Additional opaque masking material may be placed on the underside of the upper polarizer and on the upper surface of the thin-film transistor layer to block the openings from view following visual inspection.

Abstract: A semiconductor device, and a method of fabricating the same, include a substrate including two-dimensionally arranged active portions, device isolation patterns extending along sidewalls of the active portions, each of the device isolation patterns including first and second device isolation patterns, gate patterns extending across the active portions and the device isolation patterns, each of the gate patterns including a gate insulating layer, a gate line and a gate capping pattern, and ohmic patterns on the active portions, respectively. Top surfaces of the first device isolation pattern and the gate insulating layer may be lower than those of the second device isolation pattern and the gate capping pattern, respectively, and the ohmic patterns may include an extending portion on the first insulating layer.

Abstract: The present inventive concepts provide methods for fabricating semiconductor devices. The method may comprise providing a substrate, stacking a conductive layer and a lower mask layer on the substrate, forming a plurality of hardmask layers each having an island shape on the lower mask layer, forming a plurality of upper mask patterns having island shapes arranged to expose portions of the lower mask layer, etching the exposed portions of the lower mask layer to expose portions of the conductive layer, and etching the exposed portions of the conductive layer to form a plurality of contact holes each exposing a portion of the substrate.

Abstract: Provided is a memory device. The memory device includes a substrate including a cell area and a peripheral area; gate line stacks and bit line stacks configured to vertically cross in the cell area; buried contacts disposed in areas, which are simultaneously shared by neighboring gate line stacks and neighboring bit line stacks; expanded landing pads including expanded portions connected to the buried contacts and expanded over adjacent bit line stacks, and disposed in a row; landing pads spaced apart from the expanded landing pads as a column, connected to the buried contacts, and having horizontal widths smaller than those of the expanded landing pads; and first storage nodes connected to the expanded portions of the expanded landing pads, and second storage nodes connected to the landing pads.

Abstract: A method for manufacturing a flexible display device includes: manufacturing a flexible substrate on a substrate by: forming a first organic layer on the substrate, removing foreign particles formed on the first organic layer and forming a recessed first repair groove in the first organic layer, forming a first inorganic layer on the first organic layer, forming a second organic layer on the first inorganic layer and forming a second inorganic layer on the second organic layer, forming a display for displaying an image on the flexible substrate and removing the substrate from the first organic layer.

Abstract: A semiconductor device, and a method of fabricating the same, include a substrate including two-dimensionally arranged active portions, device isolation patterns extending along sidewalls of the active portions, each of the device isolation patterns including first and second device isolation patterns, gate patterns extending across the active portions and the device isolation patterns, each of the gate patterns including a gate insulating layer, a gate line and a gate capping pattern, and ohmic patterns on the active portions, respectively. Top surfaces of the first device isolation pattern and the gate insulating layer may be lower than those of the second device isolation pattern and the gate capping pattern, respectively, and the ohmic patterns may include an extending portion on the first insulating layer.

Abstract: The present inventive concepts provide methods for fabricating semiconductor devices. The method may comprise providing a substrate, stacking a conductive layer and a lower mask layer on the substrate, forming a plurality of hardmask layers each having an island shape on the lower mask layer, forming a plurality of upper mask patterns having island shapes arranged to expose portions of the lower mask layer, etching the exposed portions of the lower mask layer to expose portions of the conductive layer, and etching the exposed portions of the conductive layer to form a plurality of contact holes each exposing a portion of the substrate.

Abstract: A liquid crystal display may have a thin-film transistor layer with an array of pixel electrode structures for applying electric fields to a liquid crystal layer. The liquid crystal display may also have a color filter layer with an array of color filter elements. The color filter elements may allow the display to display color images. The color filter layer may be interposed between the thin-film transistor layer and a backlight. The liquid crystal layer may be sandwiched between the thin-film transistor layer and the color filter layer. The color filter layer may have a transparent substrate on which the color filter elements are formed. Black masking structures may be formed on a transparent overcoat layer that covers the color filter elements. Black column spacers may be formed from the same layer of material that forms the black masking structures.

Abstract: A liquid crystal display having an outer layer such as a thin-film transistor layer and an inner layer such as a color filter layer may be mounted in a metal device housing. Transparent conductive coating material may be formed on display layers. The transparent conductive coating material may include a layer on the upper surface of the thin-film transistor layer, a layer on the lower surface of the color filter layer, and an edge coating that extends between the upper surface layer and lower surface layer. Electrostatic discharge protection structures for the display may include a conductive elastomeric gasket that couples the upper surface layer to an inner surface of the housing, a conductive tape that couples the lower surface layer to the inner surface, and a conductive material on the inner surface that contacts the edge coating.

Abstract: A semiconductor device, and a method of fabricating the same, include a substrate including two-dimensionally arranged active portions, device isolation patterns extending along sidewalls of the active portions, each of the device isolation patterns including first and second device isolation patterns, gate patterns extending across the active portions and the device isolation patterns, each of the gate patterns including a gate insulating layer, a gate line and a gate capping pattern, and ohmic patterns on the active portions, respectively. Top surfaces of the first device isolation pattern and the gate insulating layer may be lower than those of the second device isolation pattern and the gate capping pattern, respectively, and the ohmic patterns may include an extending portion on the first insulating layer.

Abstract: A projector includes a light source that emits a light beam, an illumination lens unit, a display device, a projection lens unit, a field lens, and a reflection member. The illumination lens unit shapes and focuses the light beam into an illumination light beam. The display device modulates the illumination light beam and forms an image. The projection lens unit projects the image on a screen. The field lens has a positive refractive power for focusing the illumination light beam on the display device, a first lens surface on which the illumination light beam is incident, and a second lens surface on which the image formed by the display device is incident. The reflection member changes an illumination light beam path into a direction of the field lens. The first lens surface reflects a portion of the illumination light beam into a path that avoids the projection lens unit.

Abstract: According to an example embodiment, a variable resistance memory device includes a lower electrode that includes a spacer-shaped first sub lower electrode and a second sub lower electrode covering a curved sidewall of the first sub lower electrode. The second sub lower electrode extends upward to protrude above the top of the first sub lower electrode. The lower electrode includes an upward-tapered shape.

Abstract: A magnetic memory device is provided. The magnetic memory device may include a plurality of word lines extending along a direction crossing a plurality of active regions and at least one source line connected to a plurality of first active regions arranged on a level that is lower than the upper surface of a substrate. A plurality of contact pads may be connected to a plurality of second active regions and a plurality of buried contact plugs may be connected to the plurality of second active regions via the plurality of contact pads. Said buried contact pads may further be arranged in a hexagonal array structure. A plurality of variable resistance structures may be connected to the plurality of second active regions and arranged in a hexagonal array structure.

Abstract: A method of manufacturing a substrate for a display device includes forming a first organic layer on a base substrate; forming an inorganic layer on the first organic layer; and forming a second organic layer on the inorganic layer, where the second organic layer includes transition metal particles.

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device includes active portions defined in a semiconductor substrate, a device isolation pattern in a trench formed between the active portions, a gate electrode in a gate recess region crossing the active portions and the device isolation pattern, a gate dielectric layer between the gate electrode and an inner surface of the gate recess region, and a first ohmic pattern and a second ohmic pattern on each of the active portions at both sides of the gate electrode, respectively. The first and second ohmic patterns include a metal-semiconductor compound, and a top surface of the device isolation pattern at both sides of the gate recess region is recessed to be lower than a level of a top surface of the semiconductor substrate.

Abstract: A magnetic memory device is provided. The magnetic memory device may include a plurality of word lines extending along a direction crossing a plurality of active regions and at least one source line connected to a plurality of first active regions arranged on a level that is lower than the upper surface of a substrate. A plurality of contact pads may be connected to a plurality of second active regions and a plurality of buried contact plugs may be connected to the plurality of second active regions via the plurality of contact pads. Said buried contact pads may further be arranged in a hexagonal array structure. A plurality of variable resistance structures may be connected to the plurality of second active regions and arranged in a hexagonal array structure.

Abstract: The invention relates to a red phosphorescent compound represented by the following Formula (1) and an organic electroluminescent (EL) device using the same: wherein

Abstract: Provided are a magnetic memory device and a method of fabricating the same. The device may include a cell selection device, a magnetic tunnel junction (MTJ), and a lower electrode connecting them. The lower electrode may include a vertical portion and a horizontal portion laterally extending from a side surface of the vertical portion. In the lower electrode, the vertical portion has a top surface higher than the horizontal portion and has a top surface including at least two parallel sides and other side at an angle thereto. The MTJ may be provided on the vertical portion of the lower electrode.

Abstract: A variable resistive memory device capable of reducing contact resistance by including a contact layer having low contact resistance, the variable resistive memory device including a substrate comprising an active region; a gate line on the substrate; a first contact layer electrically connected to the active region; a memory cell contact plug electrically connected to the first contact layer; and a variable resistive memory cell electrically connected to the memory cell contact plug, wherein the first contact layer has less contact resistance with respect to the active region than the memory cell contact plug.

Abstract: An organic light-emitting display apparatus includes a flexible substrate. The organic light-emitting display apparatus includes a first plastic layer. A first barrier layer is formed on the first plastic layer. A second plastic layer is formed on the first barrier layer. An organic light-emitting device layer is formed on the second plastic layer. A thin film encapsulating layer encapsulates the organic light-emitting device layer. The first barrier layer is patterned to correspond to an area where the organic light-emitting device layer is formed.