Abstract: Embodiments describe the selective electroless plating of dielectric layers. According to an embodiment, a dielectric layer is patterned to form one or more patterned surfaces. A seed layer is then selectively formed along the patterned surfaces of the dielectric layer. An electroless plating process is used to deposit metal only on the patterned surfaces of the dielectric layer. According to an embodiment, the dielectric layer is doped with an activator precursor. Laser assisted local activation is performed on the patterned surfaces of the dielectric layer in order to selectively form a seed layer only on the patterned surfaces of the dielectric layer by reducing the activator precursor to an oxidation state of zero. According to an additional embodiment, a seed layer is selectively formed on the patterned surfaces of the dielectric layer with a colloidal or ionic seeding solution.

Abstract: A method for manufacturing a semiconductor device includes providing a semiconductor structure having a substrate structure, multiple fins having a germanium layer, a dummy gate structure including sequentially a hardmask, a dummy gate, a dummy gate insulating material on the germanium layer, and spacers on opposite sides of the dummy gate structure and on a portion of the germanium layer. The method also includes forming an interlayer dielectric layer on the substrate structure covering the dummy gate structure, planarizing the interlayer dielectric layer to expose a surface of the dummy gate, removing the dummy gate and the dummy gate insulating material to expose a surface of the germanium layer, performing a silane impregnation process on the exposed surface of the germanium layer to introduce silicon to the germanium layer, and performing an oxidation process on the germanium layer to form an oxide layer comprising silicon and germanium.

Abstract: The present invention relates to a leak detection method for GIS based on vibration signals and belongs to the technical field of apparatus for detecting or reacting mechanical or electrical troubles. The method is carried out by the following steps: 1) Installing a vibration sensor on each connecting flange of each gas-tight chamber of the GIS; 2) Starting the GIS; 3) Acquiring the vibration signals of sensors when the GIS operation is stable after starting; 4) Doing de-noise processing on the collected vibration signal; 5) Doing 4-layer wavelet packet decomposition of the vibration signal after noise reduction to obtain the energy proportion of the vibration signal in each frequency band; 6) Analyzing the energy proportion of the vibration signal in each frequency band in step 5), Then alarm to notify the relevant personnel. Return to step 3) until the fault has been solved.

Abstract: An SRAM includes a substrate containing a plurality of first substrate regions and a plurality of second substrate regions, a plurality of pull-down transistors formed in the first substrate regions with each pull-down transistor including a first gate structure, and a plurality of pass-gate transistors formed in the second substrate regions with each pass-gate transistor including a second gate structure. A portion of the first substrate region under each first gate structure is doped with first doping ions and a portion of the second substrate region under each second gate structure is doped with second doping ions. Moreover, the concentration of the first doping ions is less than the concentration of the second doping ions, and the work function of the first work function layer in the first gate structures is greater than the work function of the second work function layer in the second gate structures.

Abstract: An electrical submersible pump assembly has modules, including a pump, a seal section and a motor. A rotatable first drive shaft in a first one of the modules has a splined end that mates with a splined end of a rotatable second drive shaft in a second one of the modules. An external set of splines is on mating ends of the first drive shaft and the second drive shaft. A coupling has an internal set of splines that mesh with the external set to rotationally couple the first and second drive shafts to each other. A polymer coating is selectively bonded on one of the sets and in sliding engagement with the other set. The coating is a solid polymer material having a lower coefficient of friction than steel alloys of the internal set and the external set.

Abstract: A method includes providing a semiconductor structure comprising multiple fins and a gate structure on the fins. The method also includes removing a portion of the fins not covered by the gate structure to form a remaining portion of the fins, performing a first epitaxially growth process to form first epitaxially grown regions on the remaining portion of the fins, performing a first annealing process so that an upper portion of the first epitaxially grown regions is greater than a lower portion, performing a second epitaxially growth process on the annealed first epitaxially grown regions to form second epitaxially grown regions, and performing a second annealing process on the second epitaxially grown regions, so that an upper portion of the second epitaxially grown regions is greater than a lower portion. The second epitaxially grown regions are separated from each other before and after the second annealing process.

Abstract: A switching power converter is provided that cycles a power switch during a group pulse mode of operation to produce a train of pulses within a group period responsive to a control voltage being within a group mode control voltage range.

Abstract: A switching power converter provides regulated voltage to a load. The switching power converter comprises a transformer including a primary winding coupled to an input voltage and a secondary winding coupled to an output of the switching power converter. The switching power converter further comprises a power switch coupled to the primary winding and a rectifier coupled to the secondary winding. Current is generated in the primary winding responsive to the power switch being turned on and not generated responsive to the power switch being turned off. A detection circuit measures a voltage across the rectifier. If the detection circuit detects a decrease in the voltage across the rectifier outside of a blanking period, the detection circuit generates a current pulse in the secondary winding of the transformer.

Abstract: The present disclosure provides a method for fabricating a fin field-effect transistor (fin-FET), including: providing a substrate having a plurality of discrete fin structures thereon; forming a chemical oxide layer on at least a sidewall of a fin structure; forming a doped layer containing doping ions on the chemical oxide layer; and annealing the doped layer such that the doping ions diffuse into the fin structure to form a doped region.

Abstract: A method for manufacturing a semiconductor device includes providing a substrate structure comprising a substrate, a plurality of fins on the substrate and a hardmask on the fins, forming an insulating layer on the substrate structure covering the fins and the hardmask, removing a portion of the insulating layer by etching to expose the hardmask, removing the hardmask, and performing a fluorine ion implantation into a top portion of the fins. The implanted fluorine ions passivate dangling bonds in the top portion of the fins, thereby improving the reliability of the semiconductor device.

Abstract: Embodiments of the present application disclose a clear channel assessment (CCA) method, an information receiving method, and apparatuses thereof. The CCA method comprises: sending downlink information on a first carrier, wherein the downlink information comprises first indication information, and the first indication information is used to indicate that at least one part of at least one symbol of at least one subframe is idle; and performing CCA on at least one neighboring carrier of the first carrier in at least a time of the at least one part that is idle. According to the methods and the apparatuses in the embodiments of the present application, a part of channel resources can be reserved when downlink information is transmitted on a carrier, so as to prevent interference caused by local leakage of the carrier to CCA on a neighboring carrier, thereby preventing CCA blocking between carriers.

Abstract: A method for fabricating a Fin-FET device includes forming fin structures with each having a gate structure on the top in both P-type regions and N-type regions, forming a first epitaxial layer on each fin structure on both sides of the gate structure in the P-type regions, forming a P-type doped first covering layer on each first epitaxial layer, forming a second epitaxial layer on each fin structure on both sides of the gate structure in the N-type regions, forming an N-type doped second covering layer on each second epitaxial layer, and forming a titanium-containing silicification layer on the first covering layer and the second covering layer. The method further includes performing a first annealing process to let titanium ions in the silicification layer diffuse into the first covering layer to form a first metal silicide layer and into the second covering layer to form a second metal silicide layer.

Abstract: A single phase permanent magnet motor includes a stator and a rotor. The stator includes a stator core with windings. The stator core includes a yoke and claw-poles. Each claw-pole forms an arc pole face which is an involute curved face. All arc pole faces cooperatively define a space for receiving the rotor. A gradually changing uneven air gap is defined between the arc pole faces and the rotor. When the motor powers off and stops, the pole axis of the rotor is offset from the central axis of the claw-poles by a certain angle to avoid the rotor to stop at a dead point position, thus facilitating next startup of the motor.

Abstract: The present disclosure pertains to the field of computer technologies, and discloses an advertisement click-through rate correction method and an advertisement push server. The method includes: predicting click-through rates of training samples by using a logistic regression model, to obtain predicted values associated with the click-through rates of the training samples; querying observation values of the training samples according to stored log data; and calculating correction values of the predicted values of the training samples according to the observation values of the training samples, so that in two neighboring predicted values, a correction value of the former predicted value is less than or equal to a correction value of the latter predicted value.

Abstract: A data system can include a JavaScript Object Notation (JSON) data source, a cluster computing system, and a hierarchical JSON handler. The schema of the JSON data source can include a hierarchically-structured element having a nested array. The cluster computing system can store datasets across multiple nodes for parallel manipulation. The datasets can have a flat structure and can be queried using a Structured Query Language (SQL). The cluster computing system can lack the ability to directly import the hierarchically-structured element of the JSON data source into a dataset. The hierarchical JSON handler can be configured to extract and flatten the hierarchically-structured element of the JSON data source and import the extracted and flattened JSON data into one or more target datasets of the cluster computing system. The cluster computing system can then able to perform operations upon the target datasets.

Abstract: A method and device for detecting control signaling and a method and device for implementing control signaling detection are provided, wherein blind detection times or the amount of enhanced Physical Downlink Control Channels (ePDCCH) allocated by each ePDCCH resource set is determined, so that the ePDCCH needed to be detected in each ePDCCH resource set can be determined.

Abstract: A method of manufacturing a semiconductor device includes providing a semiconductor substrate, forming a diamond film on the substrate, etching the diamond film to form a first trench that extends to the substrate, epitaxially growing a first semiconductor material in the first trench to form a first semiconductor fin structure, and removing an upper portion of the diamond film to expose an upper portion of the first semiconductor fin structure.

Abstract: A motor includes a stator, a rotor rotatable relative to the stator, a support member, and a circuit assembly. The circuit assembly includes a plurality of electronic components. The rotor is rotatably mounted to the support member. The stator is received in the rotor. The stator is fixed to the support member, and the support member is at least partially received in an inner side of the stator. A portion of the support member received in the inner side of the stator defines a receiving space, and at least part of the electronic components of the circuit assembly is received in the receiving space of the support member. The support member is partially received in the inner side of the stator, and the circuit assembly is at least partially received in the support member, which makes the motor have a relatively smaller axial size.

Abstract: A mobile radio has selectable transmit and receive channels, and is in a talkgroup that has a primary channel and multiple auxiliary channels. The mobile radio receives a broadcast-start command, and responsively selects its transmit channel to be the primary channel (if available) or an inactive auxiliary channel (if the primary channel is not available). The mobile radio receives user media via its user interface, and transmits that received user media on its selected transmit channel. The mobile radio scans for an auxiliary channel transitioning from inactive to active. Responsive to detecting such a transition, the mobile radio selects that auxiliary channel as its receive channel. The mobile radio mixes inbound media received on its selected receive channel with user media received via its user interface, and transmits the mixed media on its selected transmit channel.

Abstract: The present invention discloses a lamp, mounted on a socket when in use, comprising a cap, a housing, and a light source, wherein the cap is adapted to connect to the socket, one of the cap and the housing comprises a tubular body, and the other comprises a cylindrical cavity for accommodating the tubular body, and the tubular body rotates in the cylindrical cavity around an axis of the cap and moves along the axial direction of the cap to effect relative rotation and relative telescopic motion between the cap and the housing. The lamp of the present invention allows both relative rotation and relative telescopic motion between the cap and the housing, therefore facilitating adjustment of the illumination direction, and is adaptable to different types of fittings.