Patents by Inventor Yong Li

Yong Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180102363
    Abstract: A semiconductor structure and a fabrication method are provided. A fabrication method includes providing a plurality of fins on a substrate including an NMOS region and a PMOS region adjacent to the NMOS region; forming an N-type well in the PMOS region and a P-type well in the NMOS region of the substrate; forming a protective sidewall to cover an upper portion of a sidewall surface of each fin in each of the NMOS region and PMOS region and to expose a lower portion of the sidewall surface of each fin; removing a partial width of the lower portion of the fin using the protective sidewall as an etch mask; removing the protective sidewall; and forming an isolation structure at least by oxidizing the remaining lower portion of the fin and having a top surface lower than the neighboring upper portions of the fins.
    Type: Application
    Filed: October 6, 2017
    Publication date: April 12, 2018
    Inventor: Yong LI
  • Patent number: 9935993
    Abstract: Systems and methods to deliver streaming video over a hybrid network are provided herein. An adjusted bitrate to transmit video from a server to a client is determined in response to a fast-forward or rewind request. Frames from a video are selectively transmitted to accommodate for the adjusted bitrate based and a bitrate of a connection between the server and the client.
    Type: Grant
    Filed: June 9, 2015
    Date of Patent: April 3, 2018
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Yong Li, Xuemin Chen
  • Patent number: 9929267
    Abstract: The present disclosure provides N-type fin field-effect transistors and fabrication methods thereof. A method for fabricating an N-type fin field-effect transistor includes providing a semiconductor substrate; forming at least one fin having a first side surface and a second side surface over the semiconductor substrate; forming a gate structure crossing over the fin over the semiconductor substrate; performing an ion implantation process on one of the first side surface and the second side surface of the fin at two sides of the gate structure; performing a thermal annealing process to cause doping ions to diffuse to the other one of the first side surface and the second side surface of the fin; and forming a source region and a drain region on the fin at the two sides of the gate structure, respectively.
    Type: Grant
    Filed: April 13, 2016
    Date of Patent: March 27, 2018
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventor: Yong Li
  • Patent number: 9930388
    Abstract: Systems and methods to deliver streaming video over a hybrid network are provided herein. The system includes a plurality of queues, each associated with a type of video frames and a classifier to store a packet of a plurality of packets in a respective queue of the plurality of queues based on a field in the packet that indicates the type of video frame in the packet. The system also includes a scheduler configured to selectively transmit or drop the packet based on an available bitrate for transmission and the type of video frame associated with the queue.
    Type: Grant
    Filed: June 9, 2015
    Date of Patent: March 27, 2018
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Yong Li, Xuemin Chen
  • Publication number: 20180079711
    Abstract: Provided is a glaucocalyxin A derivative, or salt thereof, as represented by the formula (I), a method for preparation of said glaucocalyxin A derivative, and a use for said glaucocalyxin A derivative in preparing pharmaceuticals for fighting autoimmune diseases and tumors, e.g.
    Type: Application
    Filed: December 17, 2015
    Publication date: March 22, 2018
    Inventors: Haimei Feng, Rensen Zhou, Xiang Chen, Yunhui Yu, Qian Liu, Yong Li, Shiping Deng, Chuangliang Jiang
  • Publication number: 20180084577
    Abstract: A device for providing downlink channel access for non-operator devices includes at least one processor that is configured to establish a local connection with an operator device that is serviced by a network operator. The at least one processor is configured to provide, to the operator device over the local connection, a request to establish a connection to a network, the request comprising a destination address. The at least one processor is configured to receive, from the operator device over the local connection, control information for reception of a downlink channel provisioned by the network operator for the operator device. The at least one processor is configured to receive downlink data associated with the destination address on the downlink channel.
    Type: Application
    Filed: November 14, 2017
    Publication date: March 22, 2018
    Inventors: Yong LI, Xuemin CHEN
  • Patent number: 9924380
    Abstract: In switching a radio base station (SeNB) from a radio base station (SeNB#1) to a radio base station (SeNB#2) in an “Inter-node UP aggregation”, forwarding of new downlink data destined for a mobile station (UE) from a radio base station (MeNB) to the radio base station (SeNB#2) is quickly started. A mobile communication method according to the present invention includes: sending, by the mobile station UE, the radio base station (MeNB) a “New data delivery request” that requests forwarding of new downlink data destined for the mobile station (UE) to the radio base station (SeNB#2), in response to an “SeNB change command”; and forwarding, by the radio base station MeNB, the new downlink data destined for the mobile station (UE) to the radio base station (SeNB#2), in response to the “New data delivery request”.
    Type: Grant
    Filed: August 15, 2014
    Date of Patent: March 20, 2018
    Assignee: NTT DOCOMO, INC.
    Inventors: Tooru Uchino, Yoshihisa Kishiyama, Lan Chen, Liu Liu, Lihui Wang, Yong Li, Wenbo Wang
  • Patent number: 9922980
    Abstract: A method of manufacturing a semiconductor device includes providing a semiconductor substrate, forming a diamond film on the substrate, etching the diamond film to form a first trench that extends to the substrate, epitaxially growing a first semiconductor material in the first trench to form a first semiconductor fin structure, and removing an upper portion of the diamond film to expose an upper portion of the first semiconductor fin structure.
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: March 20, 2018
    Assignees: Semiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation
    Inventor: Yong Li
  • Publication number: 20180065973
    Abstract: The present invention is directed to processes for preparing beta 3 agonists of Formula (I) and Formula (II) and their intermediates. The beta 3 agonists are useful in the treatment of certain disorders, including overactive bladder, urinary incontinence, and urinary urgency.
    Type: Application
    Filed: November 9, 2017
    Publication date: March 8, 2018
    Applicant: Merck Sharp & Dohme Corp.
    Inventors: John Y.L. CHUNG, Kevin CAMPOS, Edward CLEATOR, Robert F. DUNN, Andrew GIBSON, R. Scott HOERRNER, Stephen KEEN, Dave LIEBERMAN, Zhuqing LIU, Joseph LYNCH, Kevin M. MALONEY, Feng XU, Nobuyoshi YASUDA, Naoki YOSHIKAWA, Yong-Li ZHONG
  • Patent number: 9911832
    Abstract: A method for manufacturing a semiconductor device includes providing a substrate structure comprising a substrate, a plurality of fins on the substrate and a hardmask on the fins, forming an insulating layer on the substrate structure covering the fins and the hardmask, removing a portion of the insulating layer by etching to expose the hardmask, removing the hardmask, and performing a fluorine ion implantation into a top portion of the fins. The implanted fluorine ions passivate dangling bonds in the top portion of the fins, thereby improving the reliability of the semiconductor device.
    Type: Grant
    Filed: August 12, 2016
    Date of Patent: March 6, 2018
    Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
    Inventor: Yong Li
  • Publication number: 20180061824
    Abstract: An electrostatic discharge protection structure and a fabricating method thereof are provided. The electrostatic discharge protection structure comprises: a substrate; multiple fin portions arranged on the substrate; a gate structure on the substrate across the fin portions, and on a portion of top surfaces and sidewalls of the fin portions; a first groove in the substrate and overlapping with a first extension pattern of the fin portions; a first doped epitaxial layer filled within the first groove, and being used as a source; a second groove in the substrate and overlapping with a second extension pattern of the fin portions; and a second doped epitaxial layer filled within the second groove, and being used as a drain.
    Type: Application
    Filed: July 28, 2017
    Publication date: March 1, 2018
    Inventor: YONG LI
  • Patent number: 9907085
    Abstract: A method includes detecting, using a WiFi access point, channel use data indicating traffic on a plurality of channels of an unlicensed LTE band in a wireless network. The method further includes providing the channel use data to a Long Term Evolution (LTE) access point. The method further includes selecting, using the LTE access point, a channel for use in transmitting data by the LTE access point from among the plurality of channels based on the channel use data from the WiFi access point. The method further includes providing, from the LTE access point, an indication of an upcoming transmission configured to transmit data on the channel to the WiFi access point. The method further includes broadcasting one or more messages from the WiFi access point to one or more WiFi nodes, the one or more messages configured to prevent the WiFi nodes from transmitting on the channel.
    Type: Grant
    Filed: September 23, 2015
    Date of Patent: February 27, 2018
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Yong Li, Guy Drory, Yonatan Cohen, Baoguo Yang, Matthew Fischer, Sharon Levy, Sindhu Verma, Shubhodeep Adhikari
  • Patent number: 9898337
    Abstract: An approach for deploying workload in a multi-tenancy computing environment is provided. The approach generates, by one or more computer processors, a tenant ID and a plan ID for a tenant based, at least in part, on a tenant registration request. The approach stores, by one or more computer processors, the tenant ID and the plan ID into a shared system record. The approach receives, by one or more computer processors, a request to update a first tenant service plan. The approach determines, by one or more computer processors, one or more resource pools supporting a second tenant service plan based at least in part, on an association between the tenant ID and the plan ID. The approach deploys, by one or more computer processors, one or more resources from the one or more resource pools supporting the second tenant service plan.
    Type: Grant
    Filed: March 27, 2015
    Date of Patent: February 20, 2018
    Assignee: International Business Machines Corporation
    Inventors: Yong Li, Jean-Claude Mamou, David T. Meeks, Xiaoyan Pu
  • Publication number: 20180048387
    Abstract: Provided are a method and a device for processing signal, and a receiver. The method includes: receiving a signal to be recovered; determining a cutting position of the signal to be recovered; and recovering the signal to be recovered into a transmitted signal according to the determined clipping position.
    Type: Application
    Filed: February 15, 2016
    Publication date: February 15, 2018
    Applicant: ZTE CORPORATION
    Inventors: Baiqing ZONG, Yong LI
  • Publication number: 20180045219
    Abstract: A blower includes a mounting base, a motor, an impeller, and an electronic control unit. The motor is mounted to the mounting base from one direction. The impeller is mounted on the motor. The electronic control unit is mounted on the mounting base from an opposite direction. The mounting base defines a through hole. The through hole is axially aligned with a motor shaft to expose an axial end of the motor shaft opposite from the impeller. The electronic control unit comprises a printed circuit board disposed offset from the through hole.
    Type: Application
    Filed: August 11, 2017
    Publication date: February 15, 2018
    Inventors: Yue Li, Mao Xiong JIANG, Jian ZHAO, Yong Wang, Yong Li, Bei Bei HE
  • Patent number: 9894125
    Abstract: A system includes one or more network media service devices, with each network media node operably connected upstream to one or more gateway devices. At least one of the network media service devices is configured to intercept an ABR-related request to receive digital media content for a media channel sent from a client set top box to a remote ABR server located upstream from the at least one network media device, identify a second gateway device that is storing the digital media content, the second gateway device having previously received the digital media content from the remote ABR server, and return a network address of the second gateway device to the client set top box for use by the client set top box to receive the digital media content from the second gateway device. In various implementations, the network address is returned in connection with an HTTP response indicating a redirection to the network address.
    Type: Grant
    Filed: August 6, 2013
    Date of Patent: February 13, 2018
    Assignee: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
    Inventors: Yong Li, Xuemin Chen
  • Patent number: 9893182
    Abstract: The present disclosure provides a method for forming a field-effect fin transistor (FinFET) structure. The method includes providing a substrate with fin structures; forming a gate structures across the fin structures; and forming ion implantation regions in the fin structures at both sides of the gate structure. The method also includes removing top portions of the fin structures at both sides of the gate structure to form remaining portions of the fin structures; forming a first semiconductor material layer on the remaining portions of the fin structures; and forming a second semiconductor material layer on the first semiconductor material layer, the second semiconductor material being doped with barrier-lowering ions. The method further includes forming a metal layer on the second semiconductor material layer, and performing an annealing process on the metal layer to form a contact-resistance-reducing layer.
    Type: Grant
    Filed: January 6, 2016
    Date of Patent: February 13, 2018
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventor: Yong Li
  • Publication number: 20180029981
    Abstract: The present invention is directed to a process for preparing a compound of formula I-11 through multiple-step reactions:
    Type: Application
    Filed: September 26, 2017
    Publication date: February 1, 2018
    Inventors: John Y.L. CHUNG, Kevin CAMPOS, Edward CLEATOR, Robert F. DUNN, Andrew GIBSON, R. Scott HOERRNER, Stephen KEEN, Dave LIEBERMAN, Zhuqing LIU, Joseph LYNCH, Kevin M. MALONEY, Feng XU, Nobuyoshi YASUDA, Naoki YOSHIKAWA, Yong-Li ZHONG
  • Publication number: 20180033790
    Abstract: A method of manufacturing a semiconductor device includes providing a substrate having first and second semiconductor fins, forming an insulating layer on the substrate having first and second recesses exposing a portion of the respective first and second semiconductor fins, forming a gate dielectric layer on the first and second recesses and the exposed portions of the first and second semiconductor fins, forming a first work function adjustment layer on the gate dielectric layer, forming a functional layer on the first function adjustment layer, and forming first and second gates on portions of the functional layer of the respective first and second semiconductor fins. The opening area of the first recess is larger than the opening area of the second recess. The thickness of the functional layer on the first semiconductor fin is greater than the thickness of the functional layer on the second semiconductor fin.
    Type: Application
    Filed: March 29, 2017
    Publication date: February 1, 2018
    Inventors: YONG LI, JIAN HUA XU
  • Patent number: 9882370
    Abstract: A multi-faults service restoration method for a power distribution network overcomes the defect that a traditional service restoration method for the power distribution network cannot solve multi-faults. The method includes the steps of performing multi-faults judgment on multi-faults with processing unfinished, to form many multi-faults and many single-faults; then performing unaided fault recovery area division on the multi-faults, and performing power restoration on unaided fault recovery areas one by one; and after the multi-faults are processed, performing power restoration on each single-fault.
    Type: Grant
    Filed: June 19, 2014
    Date of Patent: January 30, 2018
    Assignees: STATE GRID CORPORATION OF CHINA, LIAWU POWER SUPPLY COMPANY OF STATE GRID SHANDONG ELECTRIC POWER COMPANY
    Inventors: Guofang Zhu, Hongmei Li, Jincang Niu, Baoguang Zhao, Shangzhen Li, Xin Shi, Yong Li, Xujie Liu, Guanbin Wu, Naiyuan Xu, Sun Li, Yuanbin Liang