Abstract: A method includes: forming, on a first substrate, a first bonding layer including a first metal oxide material in an amorphous state; forming, on a second substrate, a second bonding layer including a second metal oxide material in an amorphous state; annealing the first and second bonding layers using a laser source, so as to convert the first and second metal oxide materials to a crystalline state; forming, on the first bonding layer, a third bonding layer including a third metal oxide material in an amorphous state; forming, on the second bonding layer, a fourth bonding layer including a fourth metal oxide material in an amorphous state; bonding the first and second substrates to each other through the first to fourth bonding layers; and annealing the third and fourth bonding layers using a heat source, so as to convert the third and fourth metal oxide materials to a crystalline state.

Abstract: Disclosed are a tetrazine compound capable of having rapid cycloaddition reaction with non-strained olefinic boronic acid and biomedical application thereof. The present disclosure synthesizes a novel tetrazine compound capable of having rapid bioorthogonal cycloaddition reaction with non-strained olefinic boronic acid. The tetrazine compound of the present disclosure exhibits good stability, addressing the common contradiction in the stability and reactivity of a bioorthogonal reagent of a bioorthogonal reaction. A bioorthogonal cycloaddition reaction between the tetrazine compound of the present disclosure and non-strained olefinic boronic acid is characterized by readily available raw material, good biocompatibility, and high stability, and has great potential for application in the biomedical field of disease treatment, such as labeling, antibody-drug conjugates, prodrug release, and protein-targeted degradation.

Abstract: A device includes a substrate, a dielectric layer on the substrate, a waveguide within the dielectric layer, and a photodetector optically coupled to the waveguide. The photodetector is disposed above the waveguide layer and is monolithically integrated with the substrate. The photodetector is configured to operate at low temperatures, such as below about 50 K or about 20 K. In some embodiments, the monolithic photonic device includes thermal isolation structures and optical isolation structures. Techniques for manufacturing the monolithic photonic device, including the thermal isolation structures and optical isolation structures, are also described.

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

Abstract: A composite structure includes: a substrate, and a printable layer, provide on at least a part of a surface of the substrate and having accommodated therein a colorful material.

Abstract: A communication frame for an OTFS transmission system includes at least one first-type and at least one second-type block. At least the first-type block includes data signals two-dimensionally arranged along the delay domain and the Doppler domain of which at least one has a superimposed pilot signal. The second-type block includes data signals two-dimensionally arranged along the delay domain and the Doppler domain which may or may not have superimposed pilot signals. At least one second-type block is preceded and followed, in the delay-domain, by first-type blocks, the first-type blocks preceding and following a second-type block having at least one identical data symbol and associated superimposed identical pilot symbol at an identical location in the two-dimensional arrangement. An OTFS transmitter generates and transmits the communication frame, and a receiver uses its properties for compensating oscillator frequency offset and channel estimation.

Abstract: A method for manufacturing a semiconductor structure includes: forming a first bonding layer on a device substrate, the first bonding layer including a first bonding sub-layer and a second bonding sub-layer, the first bonding sub-layer including a first metal oxide material in an amorphous state and a plurality of metal nanoparticles, the second bonding sub-layer including a second metal oxide material in an amorphous state; forming a second bonding layer on a carrier substrate, the second bonding layer including a third metal oxide material in an amorphous state; conducting a surface modification process on the first and second bonding layers; bonding the device and carrier substrates to each other through the first and second bonding layers; and annealing the first and second bonding layers to convert the first, second, and third metal oxide materials from the amorphous state to a crystalline state.

Abstract: A communication frame for an OTFS transmission system includes first-type and second-type blocks. The first-type block includes pilot signals, guard signals, and data signals, the second-type block exclusively includes data signals. The pilot symbols, guard signals, and data symbols of the first-type block, and the data symbols of the second-type block, are arranged along the points of a grid in the delay-Doppler domain. In the communication frame, a first-type block is followed by a second-type block, and a second-type block is followed by a first-type block. In the first-type block at least one pilot symbol is surrounded on at least three sides by one or more guard symbols. Points of the grid of the first-type blocks in the delay-Doppler domain that are not occupied by pilot symbols or guard symbols are used for data symbols. The communication frame permits determining oscillator frequency offset and channel coefficients in a receiver.

Abstract: The present disclosure describes a method to form a bonded semiconductor structure. The method includes forming a first bonding layer on a first wafer, forming a debonding structure on a second wafer, forming a second bonding layer on the debonding structure, bonding the first and second wafers with the first and second bonding layers, and debonding the second wafer from the first wafer via the debonding structure. The debonding structure includes a first barrier layer, a second barrier layer, and a water-containing dielectric layer between the first and second barrier layers.

Abstract: Embodiments herein relate generally to fabricating electro-optic devices such as phase shifters and switches. An electro-optic device includes an interlayer and a ferroelectric electro-optic layer. The interlayer generates a strain in the ferroelectric electro-optic layer such that an in-plane lattice constant of the ferroelectric electro-optic layer is longer than an out-of-plane lattice constant of the ferroelectric electro-optic layer. In some embodiments, a device includes a first cladding layer, a first electrode, a second electrode, a waveguide structure comprising a first material, and a second cladding layer.

Abstract: A medical walking boot, having a boot body and a toes shield; the toes shield is removably connected with the boot body, so that a position of the toes shield relative to the boot body can be adjusted according to the needs of different users to suit different users.

Abstract: A system includes a classical computing system and one or more quantum computing chips coupled to the classical computing system. The one or more quantum computing chips includes one or more electro-optic devices. Each electro-optic device includes a substrate, a waveguide disposed on top of the substrate, and a layer stack disposed on top of the waveguide and including a plurality of electro-optic material layers interleaved with a plurality of interlayers. Each electro-optic device further comprising a waveguide core disposed on top of a portion of the layer stack. The plurality of interlayers are characterized by a first lattice structure and the plurality of electro-optic material layers are under tensile stress and are characterized by a second lattice structure and crystallographic phase.

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

Abstract: A semiconductor device structure and methods of forming the same are described. The structure includes a gate dielectric layer disposed over a substrate, a gate electrode layer disposed over the gate dielectric layer, and a first gate spacer disposed adjacent the gate dielectric layer. The first gate spacer includes an inner surface facing the gate dielectric layer and an outer surface opposite the inner surface, and the first gate spacer includes a fluorine concentration that decreases from the inner surface and the outer surface towards a center of the first gate spacer. The structure further includes a second gate spacer disposed on the outer surface of the first gate spacer, and the second gate spacer includes a fluorine concentration that decreases from an outer surface towards an inner surface.

Abstract: In a method for connection between a first electronic device and a second electronic device using a Universal Serial Bus (USB) system of the first electronic device, the first electronic device enables a first connection mode. The first electronic device allocates Internet Protocol (IP) addresses to the first electronic device and the second electronic device and the first electronic device disables transmitting data received using the USB system to a mobile communications system of the first electronic device.

Abstract: A device includes a substrate and a dielectric layer on the substrate. The device also includes a light sensitive component in the dielectric layer and a trench having a first portion disposed in the substrate and a second portion disposed in the dielectric layer. The trench is adjacent the light sensitive component and includes an adhesion layer in the first portion and the second portion, an optical isolation layer on the adhesion layer, and a first fill material in the first portion and a second fill material in the second portion. The first fill material is characterized by a first coefficient of thermal expansion (CTE) that matches a CTE of the substrate and the second fill material is characterized by a second CTE that matches a CTE of the dielectric layer.

Abstract: An electro-optical device is fabricated on a semiconductor-on-insulator (SOI) substrate. The electro-optical device comprises a silicon dioxide layer, and an active layer having ferroelectric properties on the silicon dioxide layer. The silicon dioxide layer includes a first silicon dioxide layer of the SOI substrate and a second silicon dioxide layer converted from a silicon layer of the SOI substrate. The active layer includes a buffer layer epitaxially grown on the silicon layer of the SOI substrate and a ferroelectric layer epitaxially grown on the buffer layer. The electro-optical device further comprises one or more additional layers over the active layer, and first and second contacts to the active layer through at least one of the one or more additional layers. Methods of fabricating the electro-optical device are also described herein.