Abstract: There is provided a method of receiving a transmitted signal over a time-varying channel. The method includes: obtaining a received symbol signal in frequency domain based on the transmitted signal; performing a first channel estimation based on the received symbol signal to obtain a plurality of first estimated BEM coefficients; performing a first equalization based on the received symbol signal and the plurality of first estimated BEM coefficients to obtain a plurality of first detected source symbols; and performing one or more rounds of a second channel estimation and a second equalization.

Abstract: Aspects concern a method for controlling vehicles to perform transport tasks comprising supplying information about vehicles and information about transport tasks to a graph neural network by associating each vehicle with a vehicle graph node and each transport task with a transport task graph node, processing the vehicle and the transport graph by the neural network, wherein the neural network determines a feature for each graph node, determining, for each pair of a transport graph node and vehicle graph node, a weight representing a similarity between the features determined for the transport graph node and the vehicle graph node, selecting an assignment between the transport graph nodes and the vehicle graph nodes from a set of possible assignments, wherein the selected assignment maximizes the sum of the weights of the pairs and controlling each vehicle according to the selected assignment.

Abstract: A wafer includes a silicon layer, a first dielectric layer on the silicon layer, and a ferroelectric layer on the first dielectric layer. The ferroelectric layer defines one or more gaps between portions of the ferroelectric layer. The wafer also includes a second dielectric layer on the ferroelectric layer and disposed within the one or more gaps.

Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

Abstract: A system for predicting a destination location may include one or more processors and a memory having instructions stored therein. The one or more processors may use at least one recurrent neural network to: process spatial data which may include a first set of information about origin locations and destination locations; process temporal data which may include a second set of information about times at the origin locations and the destination locations; determine hidden state data based on the spatial data and the temporal data, wherein the hidden state data may include data on origin-destination relationships; receive a current input data from a user, wherein the current input data may include an identity of the user and the current origin location of the user; and predict the destination location based on the hidden state data and the current input data.

Abstract: An electro-optic device includes a substrate and a waveguide on the substrate. The waveguide includes a layer stack including a plurality of electro-optic material layers interleaved with a plurality of interlayers and a waveguide core adjacent to the layer stack. The waveguide may include a pair of electrodes in electrical contact with the plurality of electro-optic material layers. The plurality of interlayers maintains a first lattice structure at room temperature and a cryogenic temperature. The plurality of electro-optic material layers maintains a second lattice structure and crystallographic phase at the room temperature and the cryogenic temperature.

Abstract: A method for manufacturing a semiconductor structure includes: forming a first bonding layer on a device substrate formed with a semiconductor device so as to cover the semiconductor device, wherein the first bonding layer includes a first metal oxide material in an amorphous state; forming a second bonding layer on a carrier substrate, wherein the second bonding layer includes a second metal oxide material in an amorphous state; conducting a surface modification process on the first bonding layer and the second bonding layer; bonding the device substrate and the carrier substrate to each other through the first and second bonding layers; and annealing the first and second bonding layers so as to convert the first and second metal oxide materials from the amorphous state to a crystalline state.

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

Abstract: Chemical entities that are kinase inhibitors, pharmaceutical compositions and methods of treatment of cancer are described.

Abstract: A system and method for generating an audio prompt in response to the actuation of a button on a remote-control button. This audio prompt provides aural feedback to a user that may impaired from discerning the functionality of buttons upon a remote control. This impairment may be environmental (poor lighting) or a consequence of the physical condition of the user (poor eyesight). A particular embodiment of the system and method enables audio feedback to be generated prior to the execution of any command associated with an actuated button, thereby permitting a user to take corrective action if the button was actuated inadvertently.

Abstract: In a method for connection between a first electronic device and a second electronic device using a Universal Serial Bus (USB) system of the first electronic device, the first electronic device enables a first connection mode. The first electronic device allocates Internet Protocol (IP) addresses to the first electronic device and the second electronic device and the first electronic device disables transmitting data received using the USB system to a mobile communications system of the first electronic device.

Abstract: In some embodiments method comprises depositing a ferroelectric layer on a top surface of a semiconductor wafer and forming one or more gaps in the ferroelectric layer. The one or more gaps can be formed on a repetitive spacing to relieve stresses between the ferroelectric layer and the semiconductor wafer. A first dielectric layer is deposited over the ferroelectric layer and the first dielectric layer is planarized to fill in the gaps. A second dielectric layer is formed between the ferroelectric layer and the semiconductor wafer. The second dielectric layer can be formed by annealing the wafer in an oxidizing atmosphere such that an upper portion of the semiconductor substrate forms an oxide layer between the semiconductor substrate and the ferroelectric layer.

Abstract: A method of forming a film comprises growing, using a deposition system, at least a portion of the film and analyzing, using a RHEED instrument, the at least a portion of the film. Using a computer, data is acquired from the RHEED instrument that is indicative of a stoichiometry of the at least a portion of the film. Using the computer, adjustments to one or more process parameters of the deposition system are calculated to control stoichiometry of the film during subsequent deposition. Using the computer, instructions are transmitted to the deposition system to execute the adjustments of the one or more process parameters. Using the deposition system, the one or more process parameters are adjusted.

Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

Abstract: A carrying structure including a carrying main body, two engaging components, two driven linkages, and a driving linkage is provided. The carrying main body is adapted to carry an expansion card. The two engaging components are disposed on opposite ends of the carrying main body, each of the engaging components is adapted to be actuated to an engaging state for being engaged to a server main body, and each of the engaging components is adapted to be actuated to a releasing state for being separated from the server main body. The two driven linkages are respectively connected to the two engaging components. The driving linkage is connected between the two driven linkages and adapted to drive the two engaging components to be simultaneously actuated between the engaging state and the releasing state by the two driven linkages. In addition, a server having the carrying structure is also provided.

Abstract: A method for processing a substrate includes positioning a silicon substrate in a deposition chamber. One or more intermediate layers are deposited on a surface of the silicon. The one or more intermediate layers can include strontium, which combines with the silicon to form strontium silicide. Alternatively, the one or more intermediate layers comprise germanium. A layer of amorphous strontium titanate is deposited on the one or more intermediate layers in a transient environment in which oxygen pressure is reduced while temperature is increased. The substrate is then exposed to an oxidizing and annealing atmosphere that oxidizes the one or more intermediate layers and converts the layer of amorphous strontium titanate to crystalline strontium titanate.

Abstract: A method of forming a film comprises growing, using a deposition system, at least a portion of the film and analyzing, using a RHEED instrument, the at least a portion of the film. Using a computer, data is acquired from the RHEED instrument that is indicative of a stoichiometry of the at least a portion of the film. Using the computer, adjustments to one or more process parameters of the deposition system are calculated to control stoichiometry of the film during subsequent deposition. Using the computer, instructions are transmitted to the deposition system to execute the adjustments of the one or more process parameters. Using the deposition system, the one or more process parameters are adjusted.

Abstract: A method of extracting oil from biological raw material includes creating a slurry of biological raw material, raising or lowering a pH of the slurry to separate lipid and protein components in the slurry, further separating the lipid and protein components into a first lipid rich phase and a protein rich phase, adjusting a pH of the first lipid rich phase to a point at which additional proteins in the first lipid rich phase coagulate, and recovering a second lipid rich phase from the additional coagulated proteins.

Abstract: A method for removing a native oxide film from a semiconductor substrate includes repetitively depositing layers of germanium on the native oxide and heating the substrate causing the layer of germanium to form germanium oxide, desorbing a portion of the native oxide film. The process is repeated until the oxide film is removed. A subsequent layer of strontium titanate can be deposited on the semiconductor substrate, over either residual germanium or a deposited germanium layer. The germanium can be converted to silicon germanium oxide by exposing the strontium titanate to oxygen.

Abstract: The present disclosure discloses a method for synthesizing a diaza-bridged compound and a diaza-bridged compound, belonging to the field of organic synthesis. The present disclosure includes the following reaction: in the formula, R is aryl, substituted aryl, alkyl or haloalkyl, Ra is any one of H, 2-nitrobenzenesulfonyl, 4-nitrobenzenesulfonyl or 2,4-dinitrobenzenesulfonyl, n=1 or 2. Since compound 2 and NH3 are used as raw materials, the present disclosure can not only effectively shorten the process flow and save process costs, but also improve the reaction yield to a certain extent. The present disclosure also provides a diaza-bridged compound, where the structural formula thereof is in the formula, Ra is any one of 2-nitrobenzenesulfonyl, 4-nitrobenzenesulfonyl or 2,4-dinitrobenzenesulfonyl.