Abstract: The present disclosure describes a method of forming low thermal budget dielectrics in semiconductor devices. The method includes forming, on a substrate, first and second fin structures with an opening in between, filling the opening with a flowable isolation material, treating the flowable isolation material with a plasma, and removing a portion of the plasma-treated flowable isolation material between the first and second fin structures.

Abstract: A ranging workflow to interpret the ultradeep harmonic anisotropic attenuation (UHAA) measurements and estimate the distance and orientation of the existing cased well from the well being drilled is presented herein. The ranging workflow applies to scenarios in which the wells are near parallel to each other and performs reasonably well in boreholes which are more or less perpendicular to the formation layers. The ranging workflow generally includes deploying a deep directional resistivity (DDR) tool into a new wellbore; collecting UHAA data via the DDR tool; determining resistivity values based at least in part on the UHAA data; and determining a distance of the DDR tool from a casing of an existing wellbore proximate the new wellbore based at least in part on the resistivity values and a UHAA response table for the DDR tool.

Abstract: Methods and Internet of things systems for generating early warning information in a risk region in a smart city are provided. The method includes: obtaining, from at least one monitoring device of at least one target region based on a sensing network sub-platform of a sensing network platform, a monitoring image of the at least one target region by a public security management platform; sending the monitoring image of the corresponding target region to a management sub-platform of the public security management platform; and based on the management sub-platform, processing the monitoring image to determine a suspicious index of at least one person in the monitoring image; determining, based on a sum of suspicious group indexes of suspicious groups in the target region, a risk index of the target region; generating early warning information in response to the risk index of the target region greater than a first threshold.

Abstract: A method and a smart gas Internet of Things system for maintenance scheduling and management based on gas safety are provided. The method may comprise the following operations. Gas-related features of at least one area may be obtained, alert vectors of the at least one area may be determined based on the gas-related features, the alert vectors including a leakage alert value, a count of on-call maintenance personnel in the at least one area based on the alert vectors may be determined, whether the count of on-call maintenance personnel meets a preset threshold may be determined, in response to a determination that there is at least one area where the count of on-call maintenance personnel meets the preset threshold, a real-time scheduling policy based on a scheduling capability value of the at least one area where the count of on-call maintenance personnel meets the preset threshold may be determined.

Abstract: Aspects concern a method for controlling vehicles to perform transport tasks comprising supplying information about vehicles and information about transport tasks to a graph neural network by associating each vehicle with a vehicle graph node and each transport task with a transport task graph node, processing the vehicle and the transport graph by the neural network, wherein the neural network determines a feature for each graph node, determining, for each pair of a transport graph node and vehicle graph node, a weight representing a similarity between the features determined for the transport graph node and the vehicle graph node, selecting an assignment between the transport graph nodes and the vehicle graph nodes from a set of possible assignments, wherein the selected assignment maximizes the sum of the weights of the pairs and controlling each vehicle according to the selected assignment.

Abstract: A wafer includes a silicon layer, a first dielectric layer on the silicon layer, and a ferroelectric layer on the first dielectric layer. The ferroelectric layer defines one or more gaps between portions of the ferroelectric layer. The wafer also includes a second dielectric layer on the ferroelectric layer and disposed within the one or more gaps.

Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

Abstract: A system for predicting a destination location may include one or more processors and a memory having instructions stored therein. The one or more processors may use at least one recurrent neural network to: process spatial data which may include a first set of information about origin locations and destination locations; process temporal data which may include a second set of information about times at the origin locations and the destination locations; determine hidden state data based on the spatial data and the temporal data, wherein the hidden state data may include data on origin-destination relationships; receive a current input data from a user, wherein the current input data may include an identity of the user and the current origin location of the user; and predict the destination location based on the hidden state data and the current input data.

Abstract: An electro-optic device includes a substrate and a waveguide on the substrate. The waveguide includes a layer stack including a plurality of electro-optic material layers interleaved with a plurality of interlayers and a waveguide core adjacent to the layer stack. The waveguide may include a pair of electrodes in electrical contact with the plurality of electro-optic material layers. The plurality of interlayers maintains a first lattice structure at room temperature and a cryogenic temperature. The plurality of electro-optic material layers maintains a second lattice structure and crystallographic phase at the room temperature and the cryogenic temperature.

Abstract: A method for manufacturing a semiconductor structure includes: forming a first bonding layer on a device substrate formed with a semiconductor device so as to cover the semiconductor device, wherein the first bonding layer includes a first metal oxide material in an amorphous state; forming a second bonding layer on a carrier substrate, wherein the second bonding layer includes a second metal oxide material in an amorphous state; conducting a surface modification process on the first bonding layer and the second bonding layer; bonding the device substrate and the carrier substrate to each other through the first and second bonding layers; and annealing the first and second bonding layers so as to convert the first and second metal oxide materials from the amorphous state to a crystalline state.

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

Abstract: Chemical entities that are kinase inhibitors, pharmaceutical compositions and methods of treatment of cancer are described.

Abstract: A system and method for generating an audio prompt in response to the actuation of a button on a remote-control button. This audio prompt provides aural feedback to a user that may impaired from discerning the functionality of buttons upon a remote control. This impairment may be environmental (poor lighting) or a consequence of the physical condition of the user (poor eyesight). A particular embodiment of the system and method enables audio feedback to be generated prior to the execution of any command associated with an actuated button, thereby permitting a user to take corrective action if the button was actuated inadvertently.

Abstract: In a method for connection between a first electronic device and a second electronic device using a Universal Serial Bus (USB) system of the first electronic device, the first electronic device enables a first connection mode. The first electronic device allocates Internet Protocol (IP) addresses to the first electronic device and the second electronic device and the first electronic device disables transmitting data received using the USB system to a mobile communications system of the first electronic device.

Abstract: In some embodiments method comprises depositing a ferroelectric layer on a top surface of a semiconductor wafer and forming one or more gaps in the ferroelectric layer. The one or more gaps can be formed on a repetitive spacing to relieve stresses between the ferroelectric layer and the semiconductor wafer. A first dielectric layer is deposited over the ferroelectric layer and the first dielectric layer is planarized to fill in the gaps. A second dielectric layer is formed between the ferroelectric layer and the semiconductor wafer. The second dielectric layer can be formed by annealing the wafer in an oxidizing atmosphere such that an upper portion of the semiconductor substrate forms an oxide layer between the semiconductor substrate and the ferroelectric layer.

Abstract: A method of forming a film comprises growing, using a deposition system, at least a portion of the film and analyzing, using a RHEED instrument, the at least a portion of the film. Using a computer, data is acquired from the RHEED instrument that is indicative of a stoichiometry of the at least a portion of the film. Using the computer, adjustments to one or more process parameters of the deposition system are calculated to control stoichiometry of the film during subsequent deposition. Using the computer, instructions are transmitted to the deposition system to execute the adjustments of the one or more process parameters. Using the deposition system, the one or more process parameters are adjusted.

Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

Abstract: A carrying structure including a carrying main body, two engaging components, two driven linkages, and a driving linkage is provided. The carrying main body is adapted to carry an expansion card. The two engaging components are disposed on opposite ends of the carrying main body, each of the engaging components is adapted to be actuated to an engaging state for being engaged to a server main body, and each of the engaging components is adapted to be actuated to a releasing state for being separated from the server main body. The two driven linkages are respectively connected to the two engaging components. The driving linkage is connected between the two driven linkages and adapted to drive the two engaging components to be simultaneously actuated between the engaging state and the releasing state by the two driven linkages. In addition, a server having the carrying structure is also provided.

Abstract: A method for processing a substrate includes positioning a silicon substrate in a deposition chamber. One or more intermediate layers are deposited on a surface of the silicon. The one or more intermediate layers can include strontium, which combines with the silicon to form strontium silicide. Alternatively, the one or more intermediate layers comprise germanium. A layer of amorphous strontium titanate is deposited on the one or more intermediate layers in a transient environment in which oxygen pressure is reduced while temperature is increased. The substrate is then exposed to an oxidizing and annealing atmosphere that oxidizes the one or more intermediate layers and converts the layer of amorphous strontium titanate to crystalline strontium titanate.

Abstract: A method of forming a film comprises growing, using a deposition system, at least a portion of the film and analyzing, using a RHEED instrument, the at least a portion of the film. Using a computer, data is acquired from the RHEED instrument that is indicative of a stoichiometry of the at least a portion of the film. Using the computer, adjustments to one or more process parameters of the deposition system are calculated to control stoichiometry of the film during subsequent deposition. Using the computer, instructions are transmitted to the deposition system to execute the adjustments of the one or more process parameters. Using the deposition system, the one or more process parameters are adjusted.