Patents by Inventor Yong Liang

Yong Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11615954
    Abstract: A method for processing a substrate includes positioning a silicon substrate in a deposition chamber. One or more intermediate layers are deposited on a surface of the silicon. The one or more intermediate layers can include strontium, which combines with the silicon to form strontium silicide. Alternatively, the one or more intermediate layers comprise germanium. A layer of amorphous strontium titanate is deposited on the one or more intermediate layers in a transient environment in which oxygen pressure is reduced while temperature is increased. The substrate is then exposed to an oxidizing and annealing atmosphere that oxidizes the one or more intermediate layers and converts the layer of amorphous strontium titanate to crystalline strontium titanate.
    Type: Grant
    Filed: February 14, 2020
    Date of Patent: March 28, 2023
    Assignee: PSIQUANTUM, CORP.
    Inventor: Yong Liang
  • Patent number: 11588069
    Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
    Type: Grant
    Filed: September 3, 2021
    Date of Patent: February 21, 2023
    Assignee: First Solar, Inc.
    Inventors: Kristian William Andreini, Holly Ann Blaydes, Jongwoo Choi, Adam Fraser Halverson, Eugene Thomas Hinners, William Hullinger Huber, Yong Liang, Joseph John Shiang
  • Publication number: 20230043970
    Abstract: Chemical entities that are kinase inhibitors, pharmaceutical compositions and methods of treatment of cancer are described.
    Type: Application
    Filed: October 20, 2021
    Publication date: February 9, 2023
    Inventors: Xiangping QIAN, Yong-Liang ZHU
  • Publication number: 20230045333
    Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
    Type: Application
    Filed: October 10, 2022
    Publication date: February 9, 2023
    Applicant: First Solar, Inc.
    Inventors: Kristian William Andreini, Holly Ann Blaydes, Jongwoo Choi, Adam Fraser Halverson, Eugene Thomas Hinners, William Hullinger Huber, Yong Liang, Joseph John Shiang
  • Patent number: 11561562
    Abstract: A device includes a voltage regulator circuit, a power switch circuit, and a control circuit. The voltage regulator circuit generates an output voltage at an output terminal. The power switch circuit is coupled to the voltage regulator circuit. The control circuit receives a first control signal and generates a second control signal that includes a first portion gradually declining between a first time and a second time later than the first time. When the voltage regulator circuit is turned off and a logic state of the first control signal changes at the first time, the power switch circuit is turned on at the second time, in response to the second control signal, to adjust the output voltage.
    Type: Grant
    Filed: March 5, 2021
    Date of Patent: January 24, 2023
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., TSMC CHINA COMPANY LIMITED
    Inventors: Yong-Liang Jin, Ya-Qi Ma, Wei Li, Di Fan
  • Publication number: 20230018940
    Abstract: In some embodiments method comprises depositing a ferroelectric layer on a top surface of a semiconductor wafer and forming one or more gaps in the ferroelectric layer. The one or more gaps can be formed on a repetitive spacing to relieve stresses between the ferroelectric layer and the semiconductor wafer. A first dielectric layer is deposited over the ferroelectric layer and the first dielectric layer is planarized to fill in the gaps. A second dielectric layer is formed between the ferroelectric layer and the semiconductor wafer. The second dielectric layer can be formed by annealing the wafer in an oxidizing atmosphere such that an upper portion of the semiconductor substrate forms an oxide layer between the semiconductor substrate and the ferroelectric layer.
    Type: Application
    Filed: July 15, 2021
    Publication date: January 19, 2023
    Applicant: Psiquantum, Corp.
    Inventors: Yong Liang, Vimal Kumar Kamineni, Chia-Ming Chang, James McMahon
  • Publication number: 20230009756
    Abstract: The present disclosure relates to an electronic device, a method, and a computer-readable medium for quickly switching channels. An electronic device is provided. The electronic device includes: a memory having instructions stored thereon; and a processor. The processor is configured to execute the instructions stored on the memory to cause the electronic device to execute the following operations: playing a first program of a first channel, wherein the first program is a live program; receiving user input when playing the first program; and in response to receiving the user input, switching from the first channel to a second channel and playing a second program of the second channel, wherein the second program is an OTT program.
    Type: Application
    Filed: April 13, 2022
    Publication date: January 12, 2023
    Applicant: ARRIS Enterprises LLC
    Inventors: Yong LIANG, Qi WANG, Ye-Yi CUI, Xue-Wei ZHAO
  • Publication number: 20220415696
    Abstract: The present disclosure describes a method to form a bonded semiconductor structure. The method includes forming a first bonding layer on a first wafer, forming a debonding structure on a second wafer, forming a second bonding layer on the debonding structure, bonding the first and second wafers with the first and second bonding layers, and debonding the second wafer from the first wafer via the debonding structure. The debonding structure includes a first barrier layer, a second barrier layer, and a water-containing dielectric layer between the first and second barrier layers.
    Type: Application
    Filed: March 23, 2022
    Publication date: December 29, 2022
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wei-Ting YEH, Zheng Yong Liang, De-Yang Chiou, Yu-Yun Peng, Keng-Chu Lin
  • Publication number: 20220368569
    Abstract: There is provided a method of receiving a transmitted signal over a time-varying channel. The method includes: obtaining a received symbol signal in frequency domain based on the transmitted signal; performing a first channel estimation based on the received symbol signal to obtain a plurality of first estimated BEM coefficients; performing a first equalization based on the received symbol signal and the plurality of first estimated BEM coefficients to obtain a plurality of first detected source symbols; and performing one or more rounds of a second channel estimation and a second equalization.
    Type: Application
    Filed: October 22, 2020
    Publication date: November 17, 2022
    Inventors: Xiaobei LIU, Kushal ANAND, Yong Liang GUAN, Pingzhi FAN
  • Publication number: 20220354864
    Abstract: Chemical entities that are kinase inhibitors, pharmaceutical compositions and methods of treatment of cancer are described.
    Type: Application
    Filed: February 25, 2022
    Publication date: November 10, 2022
    Inventors: Xiangping QIAN, Yong-Liang ZHU
  • Publication number: 20220332732
    Abstract: The application provides a continuous preparation method for benzylzinc halide and a derivative thereof.
    Type: Application
    Filed: September 24, 2019
    Publication date: October 20, 2022
    Inventors: Hao HONG, Jiangping LU, Xichun FENG, Xingfang SUN, Yong LIANG
  • Publication number: 20220293458
    Abstract: The present disclosure describes a method of forming low thermal budget dielectrics in semiconductor devices.
    Type: Application
    Filed: March 12, 2021
    Publication date: September 15, 2022
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Mrunal Abhijith Khaderbad, Ko-Feng Chen, Zheng Yong Liang, Chen-Han Wang, De-Yang Chiou, Yu-Yun Peng, Keng-Chu Lin
  • Publication number: 20220270874
    Abstract: A method for removing a native oxide film from a semiconductor substrate includes repetitively depositing layers of germanium on the native oxide and heating the substrate causing the layer of germanium to form germanium oxide, desorbing a portion of the native oxide film. The process is repeated until the oxide film is removed. A subsequent layer of strontium titanate can be deposited on the semiconductor substrate, over either residual germanium or a deposited germanium layer. The germanium can be converted to silicon germanium oxide by exposing the strontium titanate to oxygen.
    Type: Application
    Filed: March 11, 2022
    Publication date: August 25, 2022
    Applicant: Psiquantum, Corp.
    Inventors: Yong Liang, Vimal Kumar Kamineni
  • Patent number: 11417785
    Abstract: A photovoltaic device is presented. The photovoltaic device includes a buffer layer disposed on a transparent conductive oxide layer; a window layer disposed on the buffer layer; and an interlayer interposed between the transparent conductive oxide layer and the window layer. The interlayer includes a metal species, wherein the metal species includes gadolinium, beryllium, calcium, barium, strontium, scandium, yttrium, hafnium, cerium, lutetium, lanthanum, or combinations thereof. A method of making a photovoltaic device is also presented.
    Type: Grant
    Filed: May 4, 2017
    Date of Patent: August 16, 2022
    Assignee: First Solar, Inc.
    Inventors: Yong Liang, Jinbo Cao, William Hullinger Huber
  • Publication number: 20220251049
    Abstract: Chemical entities based on quinoxaline that are kinase inhibitors are described. Specifically, quinoxaline derivatives of Formula I, containing a diarylamide or diarylurea substructure that inhibit Braf mutant kinase activity, pharmaceutical compositions containing the inhibitor compounds and methods of treatment of cancer comprising administering an effective amount of the Braf inhibitor compound are described.
    Type: Application
    Filed: December 10, 2021
    Publication date: August 11, 2022
    Inventors: Xiangping QIAN, Yong-Liang ZHU
  • Publication number: 20220244583
    Abstract: An electro-optical device is fabricated on a semiconductor-on-insulator (SOI) substrate. The electro-optical device comprises a silicon dioxide layer, and an active layer having ferroelectric properties on the silicon dioxide layer. The silicon dioxide layer includes a first silicon dioxide layer of the SOI substrate and a second silicon dioxide layer converted from a silicon layer of the SOI substrate. The active layer includes a buffer layer epitaxially grown on the silicon layer of the SOI substrate and a ferroelectric layer epitaxially grown on the buffer layer. The electro-optical device further comprises one or more additional layers over the active layer, and first and second contacts to the active layer through at least one of the one or more additional layers. Methods of fabricating the electro-optical device are also described herein.
    Type: Application
    Filed: April 18, 2022
    Publication date: August 4, 2022
    Inventors: Yong LIANG, Nikhil KUMAR
  • Publication number: 20220216787
    Abstract: A device includes a voltage regulator circuit, a power switch circuit, and a control circuit. The voltage regulator circuit generates an output voltage at an output terminal. The power switch circuit is coupled to the voltage regulator circuit. The control circuit receives a first control signal and generates a second signal that includes a first portion gradually declining between a first time and a second time later than the first time. When the voltage regulator circuit is turned off and a logic state of the first control signal changes at the first time, the power switch circuit is turned on at the second time, in response to the second control signal, to adjust the output voltage.
    Type: Application
    Filed: March 5, 2021
    Publication date: July 7, 2022
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., TSMC CHINA COMPANY LIMITED
    Inventors: Yong-Liang JIN, Ya-Qi MA, Wei Li, Di FAN
  • Publication number: 20220168683
    Abstract: The disclosure discloses an energy-saving system for purifying and recycling oxygen from high-temperature oxygen-enriched flue gas, including a water washing mechanism for introducing high-temperature oxygen-enriched flue gas, a compressor set connected with the water washing system through a pipeline, a compressor outlet heat exchanger connected with the compressor set through a pipeline, a gas-liquid separation tank connected with the compressor outlet heat exchanger through a pipeline, a temperature swing adsorption isobaric drying mechanism and a pressure swing adsorption purification mechanism connected with the gas-liquid separation tank through pipelines, a dedusting and filtering mechanism for introducing gas treated by the temperature swing adsorption isobaric drying mechanism and the pressure swing adsorption purification mechanism, and a cooling mechanism for cooling the water washing mechanism and the compressor outlet heat exchanger.
    Type: Application
    Filed: February 22, 2021
    Publication date: June 2, 2022
    Inventors: Ke ZENG, Jiongliang YANG, Zhendong LI, Wei LI, Xuekui HU, Hao YU, Dong LIANG, Yong LIANG, Yi WANG, Kang ZOU
  • Publication number: 20220174834
    Abstract: A chassis includes a cage. The cage includes a body, a clamping member, and a buckling member. The body includes a first sliding portion, a fastening portion, and an accommodating area. The accommodating area includes a guide rail portion. The guide rail portion and the first sliding portion are disposed on two sides of the accommodating area, respectively. The fastening portion is disposed on one side of the accommodating area away from the guide rail portion. The clamping member is slidably disposed on the first sliding portion. The buckling member is disposed on the clamping member. The buckling member is adapted to be in contact with the fastening portion.
    Type: Application
    Filed: January 25, 2021
    Publication date: June 2, 2022
    Inventors: Ying Li, Yong-Liang Zheng
  • Publication number: 20220119397
    Abstract: The present disclosure discloses a method for synthesizing a diaza-bridged compound and a diaza-bridged compound, belonging to the field of organic synthesis. The present disclosure includes the following reaction: in the formula, R is aryl, substituted aryl, alkyl or haloalkyl, Ra is any one of H, 2-nitrobenzenesulfonyl, 4-nitrobenzenesulfonyl or 2,4-dinitrobenzenesulfonyl, n=1 or 2. Since compound 2 and NH3 are used as raw materials, the present disclosure can not only effectively shorten the process flow and save process costs, but also improve the reaction yield to a certain extent. The present disclosure also provides a diaza-bridged compound, where the structural formula thereof is in the formula, Ra is any one of 2-nitrobenzenesulfonyl, 4-nitrobenzenesulfonyl or 2,4-dinitrobenzenesulfonyl.
    Type: Application
    Filed: December 29, 2021
    Publication date: April 21, 2022
    Inventors: Xi LU, Shuai LIU, Yong LIANG, Jiaming CAI, Quan TANG, Yuan ZENG