Abstract: A semiconductor package includes a semiconductor chip having at least one chip pad disposed on one surface thereof; a wiring pattern disposed on top of the semiconductor chip and having at least a portion thereof in contact with the chip pad to be electrically connected to the chip pad; and a solder bump disposed on outer surface of the wiring pattern to be electrically connected to the chip pad through the wiring pattern.

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a lower structure including a semiconductor chip having a chip terminal; an external connection terminal connecting the semiconductor chip to an external device, and an intermediate connection structure including an upper surface and a lower surface opposite to the upper surface, and positioned between the lower structure and the external connection terminal.

Abstract: The present invention relates to a novel p62 ligand compound, a stereoisomer, hydrate, solvate or prodrug thereof, and a pharmaceutical or food composition for preventing or treating misfolded protein diseases comprising the same as an active ingredient. The p62 ligand compound according to the present invention can be usefully used as a pharmaceutical composition for the prevention, amelioration or treatment of various proteinopathies by activating selective autophagy in cells and thus selectively eliminating in vivo proteins, organelles and aggregates.

Abstract: The present invention relates to a semiconductor package and a method of manufacturing the same. In a semiconductor package which electrically connects a semiconductor chip and a printed circuit board using a solder ball, the semiconductor package further includes a thermal buffer layer which is positioned on a semiconductor chip, absorbs and disperse heat generated by the semiconductor chip, increases a distance between the semiconductor chip and a printed circuit board to decrease a deviation of a heat conduction process, and has a thickness ranging from 7.5 to 50% of a diameter of a solder ball.

Abstract: The present invention provides a compound represented by the following Chemical Formula 1 or a pharmaceutically acceptable salt thereof which can be effectively used for preventing or treating obesity or metabolic syndrome, and a pharmaceutical composition comprising the same. in Chemical Formula 1, R1 and R2 are the same as defined in the specification.

Abstract: A technical concept of the present disclosure provides a method of producing a semiconductor package, the method including operations of: arranging a plurality of wafers on a tray, forming an interconnect structure on the tray and the plurality of wafers, and separating the plurality of wafers from the tray.

Abstract: A semiconductor package according to an embodiment includes a semiconductor chip having a first surface in which a chip pad is formed, a first insulating layer arranged on the first surface of the semiconductor chip and including a first filler, a first conductive via electrically connected to the chip pad and formed to penetrate the first insulating layer, a redistribution pattern electrically connected to the first conductive via and buried in the first insulating layer, a second insulating layer contacting the redistribution pattern on the first insulating layer and including a second filler, a second conductive via electrically connected to the redistribution pattern and formed to penetrate the second insulating layer, an under bump material (UBM) electrically connected to the second conductive via and buried in the second insulating layer, and an external connection terminal electrically connected to the UBM.

Abstract: The present invention relates to a semiconductor package and a method of manufacturing the same. In a semiconductor package which electrically connects a semiconductor chip and a printed circuit board using a solder ball, the semiconductor package further includes a thermal buffer layer which is positioned on a semiconductor chip, absorbs and disperse heat generated by the semiconductor chip, increases a distance between the semiconductor chip and a printed circuit board to decrease a deviation of a heat conduction process, and has a thickness ranging from 7.5 to 50% of a diameter of a solder ball.

Abstract: A technical concept of the present disclosure provides a method of producing a semiconductor package, the method including operations of: arranging a plurality of wafers on a tray, forming an interconnect structure on the tray and the plurality of wafers, and separating the plurality of wafers from the tray.

Abstract: The pharmacokinetics and key technologies of the present invention are summarized in FIG. 1. Particularly, malignant misfolded proteins such as mutant huntingtin and alpha-synuclein are coagulated and grow into oligomeric coagulum ({circle around (1)}, {circle around (2)}, fibrillar coagulum ({circle around (3)}) and eventually inclusion body ({circle around (4)}). Young neurons produce a large amount of Nt-Arg through N-terminal arginylation ({circle around (5)}) of vesicle chaperones such as BiP secreted into the cytoplasm, and then arginylated BiP (R-BiP) is secreted binds to the misfolded proteins ({circle around (6)}). As a ligand, the Nt-Arg of R-BiP binds to the p62 ZZ domain ({circle around (7)}), and the normally inactivated closed form of p62 is changed to an open form, leading to structural activation ({circle around (8)}). As a result, PB1 and LC3-binding domains are exposed.

Abstract: A semiconductor package comprising a fan-out structure and a manufacturing method therefor are disclosed. A semiconductor package according to an embodiment of the present invention comprises: a wiring unit comprising an insulation layer and a wiring layer; a semiconductor chip mounted on the wiring unit and coupled to the wiring layer by flip-chip bonding; a filling member for filling a gap between the semiconductor chip and the wiring unit; and a film member for performing coating so as to cover one surface of each of the semiconductor chip, the filling member, and the wiring unit.

Abstract: The pharmacokinetics and key technologies of the present invention are summarized in FIG. 1. Particularly, malignant misfolded proteins such as mutant huntingtin and alpha-synuclein are coagulated and grow into oligomeric coagulum ({circle around (1)}, {circle around (2)}, fibrillar coagulum ({circle around (3)}) and eventually inclusion body ({circle around (4)}). Young neurons produce a large amount of Nt-Arg through N-terminal arginylation ({circle around (5)}) of vesicle chaperones such as BiP secreted into the cytoplasm, and then arginylated BiP (R-BiP) is secreted binds to the misfolded proteins ({circle around (6)}). As a ligand, the Nt-Arg of R-BiP binds to the p62 ZZ domain ({circle around (7)}), and the normally inactivated closed form of p62 is changed to an open form, leading to structural activation ({circle around (8)}). As a result, PB1 and LC3-binding domains are exposed.

Abstract: Disclosed herein is a semiconductor package in which a semiconductor chip and a mounting device are packaged together. The semiconductor package includes a semiconductor chip, a mounting block on which a first mounting device is mounted on a substrate that includes a circuit formed thereon, and an interconnection part configured to electrically connect the semiconductor chip to the mounting block.

Abstract: Disclosed herein is a stacked semiconductor package in which semiconductor chips having various sizes are stacked. In accordance with one aspect of the present disclosure, a stacked semiconductor package includes a first semiconductor chip structure provided with a first semiconductor chip, a first mold layer surrounding the first semiconductor chip, and a first penetration electrode passing through the first mold layer and electrically connected to the first semiconductor chip, and a second semiconductor chip structure vertically stacked on the first semiconductor chip structure and provided with a second semiconductor chip and a second penetration electrode electrically connected to the first penetration electrode, wherein the first semiconductor chip structure may have the same size as the second semiconductor chip structure.

Abstract: Disclosed herein are a semiconductor package and a method of manufacturing the same, which allows a conductive path to be provided to connect upper and lower portions of the semiconductor package. A semiconductor package according to the present invention includes a semiconductor chip, a substrate including an accommodating portion to accommodate the semiconductor chip, a sealing material configured to mold the semiconductor chip and the substrate to be integrated, a through wiring configured to vertically pass through the substrate, a wiring portion configured to electrically connect the semiconductor chip and one side of the through wiring, and an external connection portion to electrically connected to the other side of the through wiring and configured to be able to be electrically connected to an outside, wherein a wiring layer of the wiring portion is provided to be connected to the through wiring.

Abstract: Disclosed herein is a wire-bonding type semiconductor package in which a fan out metal pattern is formed and a method of manufacturing the same. The semiconductor package includes a frame configured to transfer an electrical signal between upper and lower parts and having a through part formed therein, a first semiconductor chip accommodated in the through part, a first encapsulant with which the frame and the first semiconductor chip are integrally molded, a second semiconductor chip stacked on the first semiconductor chip, a wire configured to electrically connect the second semiconductor chip to a signal unit of the frame, a second encapsulant with which the second semiconductor chip and the wire are integrally molded, and a wiring unit provided below the frame and the first semiconductor chip and electrically connected to the frame and the first semiconductor chip.

Abstract: Provided is a method of manufacturing a semiconductor package including a through wiring having precision and a low process defect. The semiconductor package includes an insulating substrate including a first through portion and a second through portion; a through wiring which fills the first through portion, and is located to penetrate the insulating substrate; a semiconductor chip which is located in the second through portion, and is electrically connected to the through wiring; a molding member molding the semiconductor chip and the insulating substrate; and a re-wiring pattern layer which is located at a lower side of the insulating substrate, and electrically connects the through wiring and the semiconductor chip.

Abstract: Disclosed herein is a system in package and a method of manufacturing the same. The system in package includes a first semiconductor die including a plurality of bond pads, a lead frame disposed around the first semiconductor die and provided with a plurality of signal leads, a second semiconductor die disposed in an upper side of the first semiconductor die and connected to the lead frame by wire bonding, and a fan out metal pattern disposed in a lower side of the first semiconductor die and the lead frame to connect the bond pads and the signal leads electrically and provided with a plurality of metal pads.

Abstract: Disclosed herein is a semiconductor package in which a semiconductor chip and a mounting device are packaged together. The semiconductor package includes a semiconductor chip, a mounting block on which a first mounting device is mounted on a substrate that includes a circuit formed thereon, and an interconnection part configured to electrically connect the semiconductor chip to the mounting block.

Abstract: Disclosed herein are a semiconductor package and a method of manufacturing the same, which allows a conductive path to be provided to connect upper and lower portions of the semiconductor package. A semiconductor package according to the present invention includes a semiconductor chip, a substrate including an accommodating portion to accommodate the semiconductor chip, a sealing material configured to mold the semiconductor chip and the substrate to be integrated, a through wiring configured to vertically pass through the substrate, a wiring portion configured to electrically connect the semiconductor chip and one side of the through wiring, and an external connection portion to electrically connected to the other side of the through wiring and configured to be able to be electrically connected to an outside, wherein a wiring layer of the wiring portion is provided to be connected to the through wiring.