Abstract: An object is to obtain a rectifier having a small voltage drop and to reduce the fabrication cost of a converter circuit. A photoelectric transducer device including: a photoelectric transducer element; and a converter circuit stepping up or stepping down an output of the photoelectric transducer element and including a switching element and a rectifier, in which the switching element is a first oxide semiconductor transistor that is normally off and in which the rectifier is a second oxide semiconductor transistor that is diode-connected and normally on.

Abstract: The semiconductor device includes a first conductive layer over a substrate; an oxide semiconductor layer which covers the first conductive layer; a second conductive layer in a region which is not overlapped with the first conductive layer over the oxide semiconductor layer; an insulating layer which covers the oxide semiconductor layer and the second conductive layer; and a third conductive layer in a region including at least a region which is not overlapped with the first conductive layer or the second conductive layer over the insulating layer.

Abstract: A current generator circuit included in a triangle-wave generator circuit in a control circuit includes plural stages of current mirrors connected in parallel with each other. The plural stages of current mirrors are placed so that the sum of output currents output therefrom becomes an output current of the current generator circuit. A switching element that controls the on/off state of a current in accordance with the amount of load current of a DCDC converter is connected to each of the current mirrors.

Abstract: It is an object to reduce the region of a photoelectric conversion element which light does not reach, to suppress deterioration of power generation efficiency, and to suppress manufacturing cost of a voltage conversion element. The present invention relates to a transmissive photoelectric conversion device which includes a photoelectric conversion element including an n-type semiconductor layer, an intrinsic semiconductor layer, and a p-type semiconductor layer; a voltage conversion element which is overlapped with the photoelectric conversion element and which includes an oxide semiconductor film for a channel formation region; and a conductive element which electrically connects the photoelectric conversion element and the voltage conversion element. The photoelectric conversion element is a solar cell. The voltage conversion element includes a transistor having a channel formation region including an oxide semiconductor film. The voltage conversion element is a DC-DC converter.

Abstract: An object is to provide a pretreatment device of seawater capable of growing and maintaining a biofilm in a good state on each of a plurality of filters connected in series, by supplying nutrients appropriately to the filters. A pretreatment device of seawater is used in removing salt from the seawater to obtain freshwater, and includes: a supply duct (21) through which the seawater is to be supplied; a plurality of filters (16) including a particulate filtering material and a biofilm; connecting tubes (23) which connect the plurality of filters in series; a plurality of bypass tubes (24) each of which connects corresponding one of the plurality of filters to the supply duct; and a plurality of regulating valves (26) each of which is disposed in corresponding one of the plurality of bypass tubes to regulate a flow rate.

Abstract: A reverse osmosis membrane filtering device includes: a water-collecting member including at least one water collecting pipe, and having a plurality of sections each of which has a plurality of water collecting apertures: at least one filter assembly disposed around the plurality of sections, the at least one filter assembly including a filter member including a reverse osmosis membrane; at least one insertion tube disposed inside the water-collecting member and defining a plurality of permeate-water channels corresponding to the plurality of sections inside the water-collecting member in cooperation with at least one seal member; and a pressure adjusting device configured to increase a pressure of at least one of the plurality of permeate-water channels to a pressure higher than that of another one of the plurality of permeate-water channels.

Abstract: It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first conductive layer over a substrate, a first insulating layer which covers the first conductive layer, an oxide semiconductor layer over the first insulating layer that overlaps with part of the first conductive layer and has a crystal region in a surface part, second and third conductive layers formed in contact with the oxide semiconductor layer, an insulating layer which covers the oxide semiconductor layer and the second and third conductive layers, and a fourth conductive layer over the insulating layer that overlaps with part of the oxide semiconductor layer.

Abstract: On start of an engine, a difference ?Pm between a first intake pipe pressure Pm1 and a second intake pipe pressure Pm2 is computed. Reduction correction of wall surface deposition correction is prohibited until the state that the difference ?Pm is equal to or less than a reference value ?Pmref continues over a predetermined number of strokes nref of the engine. After the state that the difference ?Pm is equal to or less than the reference value ?Pmref continues over the predetermined number of strokes nref of the engine, permission is given for the reduction correction.

Abstract: A photoelectric conversion device includes at least two photoelectric conversion elements which have voltage-current characteristics different from each other. Further, one of the photoelectric conversion elements has photoelectric conversion efficiency higher than that of the other photoelectric conversion element under the environment in which room light can be obtained. Furthermore, the other photoelectric conversion element has photoelectric conversion efficiency higher than the one of the photoelectric conversion elements under the environment in which sunlight can be obtained. Moreover, each of the voltage of electric power generated in the at least two photoelectric conversion elements is adjusted by one of at least two DC-DC converters corresponding the photoelectric conversion element. In addition, part of the electric power generated in the one of the photoelectric conversion elements is used as drive electric power of the at least two DC-DC converter.

Abstract: A solid-state imaging device includes: a pixel array including a plurality of pixels disposed in a matrix, the pixels including a charge holding section configured to hold a signal charge transferred from a photoelectric conversion section, and to include a capacitor section having a first capacitance value and an additional capacitor section for increasing the first capacitance value to be a second capacitance value; and to part of a reset transistor configured to reset a charge held by the charge holding section, a test-voltage power source configured to apply a test voltage having a voltage different from a drive voltage of the reset transistor.

Abstract: A solid-state imaging unit includes: a pixel section including a plurality of pixels each including a photoelectric conversion section, a charge-voltage conversion section, and a transfer transistor transferring charge accumulated in the photoelectric conversion section to the charge-voltage conversion section; and a storage section storing information about an optimum value of an intermediate voltage to be applied to a gate of the transfer transistor at time of an intermediate transfer operation when a signal charge accumulated in the photoelectric conversion section is divided to be read in a predetermined times of the intermediate transfer operations and a complete transfer operation.

Abstract: Provided is a method for producing a zinc alloy capable of obtaining a Zn—Si alloy having a uniform composition. Metal Zn is melted in a crucible (2) provided in a heating furnace (1) to obtain a Zn molten metal (4). Floating of a metal Si powder (6) added to the Zn molten metal (4) is suppressed by a floating suppressing member (5). Heating is performed while a liquid surface of the Zn molten metal (4) is coated with a carbonaceous material (9), thereby melting the metal Si powder (6). The suppression of the floating of the metal Si powder (6) is released to allow the melted Si to be dispersed in the Zn molten metal (4), thereby obtaining a Zn—Si alloy molten metal (11). A copper casting mold (12) is filled with the Zn—Si alloy molten metal (11), and is rapidly cooled down to obtain a billet.

Abstract: A DCDC converter includes a control circuit, a transistor in which switching is controlled by being supplied voltage output from the control circuit to a gate electrode of the transistor, a voltage conversion portion in which supply of input voltage is controlled by the switching of the transistor and output power commensurate with duty ratio of the switching of the transistor, and a detection circuit detecting the output power. Further, the control circuit includes a control signal generation circuit generating a control signal with a pulse voltage waveform and a selection circuit applying voltage of the control signal to the gate electrode in the case where current detected by the detection circuit is the same as or exceeds the threshold value and applying voltage for turning on the transistor to the gate electrode in the case where the current detected by the detection circuit falls below the threshold value.

Abstract: A solid-state imaging unit includes: a pixel section including a plurality of pixels each including a photoelectric conversion section, a charge-voltage conversion section, and a transfer transistor transferring charge accumulated in the photoelectric conversion section to the charge-voltage conversion section; and a storage section storing information about an optimum value of an intermediate voltage to be applied to a gate of the transfer transistor at time of an intermediate transfer operation when a signal charge accumulated in the photoelectric conversion section is divided to be read in a predetermined times of the intermediate transfer operations and a complete transfer operation.

Abstract: It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first conductive layer over a substrate, a first insulating layer which covers the first conductive layer, an oxide semiconductor layer over the first insulating layer that overlaps with part of the first conductive layer and has a crystal region in a surface part, second and third conductive layers formed in contact with the oxide semiconductor layer, an insulating layer which covers the oxide semiconductor layer and the second and third conductive layers, and a fourth conductive layer over the insulating layer that overlaps with part of the oxide semiconductor layer.

Abstract: This water treatment system comprises: a reverse osmosis device (2); a biofilm treatment device (4) that has a media on the surface of which a biofilm is formed and that treats water to be treated (3) before passing through the reverse osmosis device (2); an oxidizing agent addition device (5) that adds an oxidizing agent to the water to be treated (3) at a stage before treatment with the biofilm treatment device (4) or adds an oxidizing agent to the water to be treated (3) at a later stage after treatment with the biofilm treatment device (4) and before treatment with the reverse osmosis device (2); and a reducing agent addition device (6) that neutralizes the oxidizing agent by adding a reducing agent to the early stage water to be treated (3) or the later stage water to be treated (3).

Abstract: This water treatment system is provided with: a reverse osmosis membrane device; a biofilm treatment device that has a carrier, on a surface of which is formed a biofilm, and that treats water to be treated before the water to be treated is transmitted through the reverse osmosis membrane device; and at least one of a water to be treated stoppage period circulation means and a water to be treated stoppage period supply means that are driven when the intake of new water to be treated is stopped. The water to be treated stoppage circulation means supplies and circulates water to be treated from a water to be treated discharge outlet side of the biofilm treatment device to a water to be treated supply port side. The water to be treated stoppage period supply means supplies new water to be treated to the biofilm treatment device.

Abstract: A light-emitting part for a vehicle having a light-emitting region is described. The light-emitting part includes an irradiation body which i) includes a dot-shaped light source and a planar plate-shaped light guide body that emits light from the dot-shaped light source, and ii) emits the light toward a front side of the light-emitting region. The light-emitting part includes a curved plate-shaped transmissive body disposed so that the light emitted from the irradiation body is transmitted through the curved plate-shaped transmissive body. The curved plate-shaped transmissive body includes portions which are separated from the planar plate-shaped light guide body by different gaps. Also included is a surface brightness adjusting portion which adjusts a brightness of an outer surface of the light-emitting region in response to a size of the gap and a distance from the dot-shaped light source.

Abstract: Provided is a method for producing a zinc alloy capable of obtaining a Zn—Si alloy having a uniform composition. Metal Zn is melted in a crucible (2) provided in a heating furnace (1) to obtain a Zn molten metal (4). Floating of a metal Si powder (6) added to the Zn molten metal (4) is suppressed by a floating suppressing member (5). Heating is performed while a liquid surface of the Zn molten metal (4) is coated with a carbonaceous material (9), thereby melting the metal Si powder (6). The suppression of the floating of the metal Si powder (6) is released to allow the melted Si to be dispersed in the Zn molten metal (4), thereby obtaining a Zn—Si alloy molten metal (11). A copper casting mold (12) is filled with the Zn—Si alloy molten metal (11), and is rapidly cooled down to obtain a billet.

Abstract: A DC converter circuit having high reliability is provided. The DC converter circuit includes: an inductor configured to generate electromotive force in accordance with a change in flowing current; a transistor including a gate, a source, and a drain, which is configured to control generation of the electromotive force in the inductor by being on or off; a rectifier in a conducting state when the transistor is off; and a control circuit configured to control on and off of the transistor. The transistor includes an oxide semiconductor layer whose hydrogen concentration is less than or equal to 5×1019 atoms/cm3 as a channel formation layer.