Abstract: A solid-state imaging unit includes: a pixel section including a plurality of pixels each including a photoelectric conversion section, a charge-voltage conversion section, and a transfer transistor transferring charge accumulated in the photoelectric conversion section to the charge-voltage conversion section; and a storage section storing information about an optimum value of an intermediate voltage to be applied to a gate of the transfer transistor at time of an intermediate transfer operation when a signal charge accumulated in the photoelectric conversion section is divided to be read in a predetermined times of the intermediate transfer operations and a complete transfer operation.

Abstract: An apparatus state detector and its associates are provided to save time and effort for learning combinations of operation states of all apparatuses at home and commit fewer estimation errors even when an unknown apparatus starts operating. The apparatus state detector includes measuring means that measures a physical quantity of an environment in which an apparatus is placed, feature-quantity calculation means that calculates a feature quantity of the measured value measured by the measuring means, storage means that stores in advance the feature quantity of each apparatus and an apparatus state associated with the feature quantity in a reference-apparatus entry dictionary, and apparatus-state detection means that searches the reference-apparatus entry dictionary for a feature quantity by using a feature quantity calculated by the feature-quantity calculation means as a search key and detects an apparatus state based on the apparatus state associated with the retrieved feature quantity.

Abstract: A desalination apparatus includes a pretreatment device 13 having a pretreatment membrane 13a that filters suspended matters in raw water 11 with added chlorine-containing water 12, a reverse osmosis membrane device 17 having a reverse osmosis membrane 16 that removes a salt content from filtrate water 14 supplied from the pretreatment device 13 to produce permeated water 15, and a reducing-agent injection device 30 that neutralizes the added chlorine on an upstream side of the reverse osmosis membrane device 17. The reducing-agent injection device 30 extracts a part 14a of the filtrate water 14, adds metering SBS solution 18 to the part, obtains a maximum change point (equivalence point) of the oxidation-reduction potential of a reducing agent and chlorine, obtains reducing-agent additive concentration (Csm) corresponding to the equivalence point, and supplies the SBS solution 18 corresponding to the concentration to the filtrate water 14 to thereby neutralize the chlorine.

Abstract: A DC converter circuit having high reliability is provided. The DC converter circuit includes: an inductor configured to generate electromotive force in accordance with a change in flowing current; a transistor including a gate, a source, and a drain, which is configured to control generation of the electromotive force in the inductor by being on or off; a rectifier in a conducting state when the transistor is off; and a control circuit configured to control on and off of the transistor. The transistor includes an oxide semiconductor layer whose hydrogen concentration is less than or equal to 5×1019 atoms/cm3 as a channel formation layer.

Abstract: An air conditioning system diagnosis apparatus and an air conditioning system diagnosis result display apparatus capable of representing various kinds of failures with high visibility by generating a system structure diagram that illustrates an air conditioning system in a different form depending on a detected failure and illustrating the failure using this system structure diagram are obtainable. Diagnosis result superimposed diagram generating means for generating a system structure diagram that includes icons, such as an icon of an outdoor unit and an icon of an indoor unit, and a line that links them on the basis of system structure information derived by system structure analyzing means and for superimposing a refrigeration cycle diagnosis result derived by refrigeration cycle analyzing means in the vicinity of an icon of a concerned device in the system structure diagram is included.

Abstract: A medical treatment endoscope includes: an insertion portion which has a lumen formed along a longitudinal axis of the insertion portion and is configured to be inserted into a body cavity, a lateral opening portion which extends in a lateral surface of the insertion portion, from a distal end surface of the insertion portion to a proximal end side of the insertion portion, an elastic member which is provided in an inner wall of the lumen at a position separated from an edge of a proximal end of the insertion portion in a direction toward a distal end side of the insertion portion, and a tubular arm which includes a bendable bending part provided at a distal end side of the tubular arm.

Abstract: The semiconductor device includes a first conductive layer over a substrate; an oxide semiconductor layer which covers the first conductive layer; a second conductive layer in a region which is not overlapped with the first conductive layer over the oxide semiconductor layer; an insulating layer which covers the oxide semiconductor layer and the second conductive layer; and a third conductive layer in a region including at least a region which is not overlapped with the first conductive layer or the second conductive layer over the insulating layer.

Abstract: An object is to reduce power consumption of a semiconductor device including a DC-DC converter circuit. The semiconductor device includes a DC-DC converter circuit and a microprocessor. The DC-DC converter circuit includes a conversion circuit including an inductor and a transistor, and a control circuit including a comparison circuit and a logic circuit. A hysteresis comparator is used as the comparison circuit. In the control circuit, the comparison circuit compares an output signal of the conversion circuit with a first reference potential or a second reference potential, and the logic circuit performs arithmetic operation between an output signal of the comparison circuit and a clock signal of the microprocessor. In the conversion circuit, the transistor controls current flowing through the inductor in accordance with an output signal of the logic circuit, and the output signal of the conversion circuit is generated in accordance with the current flowing through the inductor.

Abstract: An embodiment of the present invention includes: a recycle line that brings a part of salt-enriched membrane separation concentrated water 26 back to the rear flow side of a pretreatment apparatus 12; a water discharge line that discharges the remained concentrated water into a sea area; and a control apparatus 31 that controls to adjust the ratio between the discharging amount of the discharging membrane separation concentrated water to be discharged into a sea area and the supplying amount of supplying seawater. A pH is set to be equal to or less than 7.3 by adding acid 21. The salt 18 is obtained from the dryer 19, and produced water (fresh water) 29 is obtained by combining evaporated water 28 supplied from the evaporator 16 with the permeated water 24 supplied from the reverse osmosis membrane apparatus 25.

Abstract: It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first conductive layer over a substrate, a first insulating layer which covers the first conductive layer, an oxide semiconductor layer over the first insulating layer that overlaps with part of the first conductive layer and has a crystal region in a surface part, second and third conductive layers formed in contact with the oxide semiconductor layer, an insulating layer which covers the oxide semiconductor layer and the second and third conductive layers, and a fourth conductive layer over the insulating layer that overlaps with part of the oxide semiconductor layer.

Abstract: A high-pressure pump P1 that increases the pressure of raw water, a high-pressure reverse osmosis device including a high-pressure reverse osmosis membrane for concentrating a salt content in high-pressure feed water, a first drain valve mounted on a permeated water line for supplying the permeated water downstream and temporarily draining permeated water of an initial start-up from a discharge line, a low-pressure pump that is mounted on a permeated water line provided downstream of the first drain valve and reduces the pressure of the permeated water, a low-pressure reverse osmosis device including a low-pressure reverse osmosis membrane for concentrating a salt content in low-pressure feed water, and a second drain valve mounted on a discharge line at the concentrated water side of the low-pressure reverse osmosis device that temporarily discharges the low-pressure feed water of the initial start-up supplied to the low-pressure reverse osmosis device.

Abstract: A solid-state imaging device includes: a pixel array including a plurality of pixels disposed in a matrix, the pixels including a charge holding section configured to hold a signal charge transferred from a photoelectric conversion section, and to include a capacitor section having a first capacitance value and an additional capacitor section for increasing the first capacitance value to be a second capacitance value; and to part of a reset transistor configured to reset a charge held by the charge holding section, a test-voltage power source configured to apply a test voltage having a voltage different from a drive voltage of the reset transistor.

Abstract: Provided is a medical treatment endoscope including: an endoscope main body which includes an elongated insertion portion having a lumen and an image capturing mechanism disposed in a distal end of the insertion portion; an arm which is able to be inserted into or extracted from the lumen and has a treatment tool lumen for allowing an endoscope treatment tool to be inserted therethrough; and a positioning mechanism which positions a part of the arm inserted through the lumen with respect to the endoscope main body.

Abstract: The semiconductor device includes a first conductive layer over a substrate; an oxide semiconductor layer which covers the first conductive layer; a second conductive layer in a region which is not overlapped with the first conductive layer over the oxide semiconductor layer; an insulating layer which covers the oxide semiconductor layer and the second conductive layer; and a third conductive layer in a region including at least a region which is not overlapped with the first conductive layer or the second conductive layer over the insulating layer.

Abstract: It is an object to obtain a detection circuit for detecting feedback voltage without variation in output voltage/current or in output voltage by the operation temperature, and a power supply circuit including thereof. A power supply circuit includes a detection circuit, an amplifier circuit outputting an output voltage, a control circuit, and a divider circuit. The detection circuit includes first and second reference voltage generation circuits and an input signal adjustment circuit. The control circuit is electrically connected to the amplifier circuit and includes the detection circuit, an error amplifier circuit, a pulse width modulation driver, a triangle-wave generation circuit, and a capacitor. The divider circuit is electrically connected to the amplifier circuit and the control circuit and inputs a voltage obtained by dividing the output voltage to the second reference voltage generation circuit.

Abstract: An object is to reduce the number of manufacturing steps of a semiconductor device, to improve yield of a semiconductor device, or to reduce manufacturing cost of a semiconductor device. One embodiment of the present invention relates to a semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes, over a substrate, a first transistor having a single crystal semiconductor layer in a channel formation region, a second transistor that is isolated from the first transistor with an insulating layer positioned therebetween and has an oxide semiconductor layer in a channel formation region, and a diode having a single crystal semiconductor layer and a oxide semiconductor layer.

Abstract: The present invention provides a patch preparation containing a support and an adhesive layer on at least one surface of the support, wherein the adhesive layer contains a drug, amine oxide, a low-polar liquid component based on an organic compound having an angle of 0-19° as calculated by the formula (I): angle(°)=arctan(inorganic value/organic value)×(180/?) and using an inorganic value and an organic value on an organic conceptual diagram, and an adhesive base, and the adhesive layer has an amine oxide content of 0.1-5 wt % and a low-polar liquid component content of 30-50 wt %.

Abstract: A high-pressure pump P1 that increases the pressure of raw water, a high-pressure reverse osmosis device including a high-pressure reverse osmosis membrane for concentrating a salt content in high-pressure feed water, a first drain valve mounted on a permeated water line for supplying the permeated water downstream and temporarily draining permeated water of an initial start-up from a discharge line, a low-pressure pump that is mounted on a permeated water line provided downstream of the first drain valve and reduces the pressure of the permeated water, a low-pressure reverse osmosis device including a low-pressure reverse osmosis membrane for concentrating a salt content in low-pressure feed water, and a second drain valve mounted on a discharge line at the concentrated water side of the low-pressure reverse osmosis device that temporarily discharges the low-pressure feed water of the initial start-up supplied to the low-pressure reverse osmosis device.

Abstract: It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first conductive layer over a substrate, a first insulating layer which covers the first conductive layer, an oxide semiconductor layer over the first insulating layer that overlaps with part of the first conductive layer and has a crystal region in a surface part, second and third conductive layers formed in contact with the oxide semiconductor layer, an insulating layer which covers the oxide semiconductor layer and the second and third conductive layers, and a fourth conductive layer over the insulating layer that overlaps with part of the oxide semiconductor layer.

Abstract: A buffer circuit having high slew rate is provided. The buffer circuit is provided, which includes a plurality of transistors having the same conductivity type and a capacitor and whose gain is determined depending on the gain of all the plurality of transistors. A buffer circuit having high driving capability and high gain of a high-frequency component can be provided. Such a buffer circuit has also high slew rate. The plurality of transistors having the same conductivity type in the buffer circuit may be either p-channel transistors or n-channel transistors.