Abstract: An embodiment of the present invention includes: a spiral type pressure vessel 15 in which a plurality of reverse osmosis membrane apparatuses 13-1 to 13-10 having spiral reverse osmosis membranes is connected through a permeated water pipe 14, and is housed in a connected state; a raw water supplying line that supplies raw water 11 into the pressure vessel 15; a concentrated water discharging line through which concentrated water 16 concentrated is discharged; a plug 17 that blocks the permeated water pipe 14 at the center of the reverse osmosis membrane apparatuses 13-1 to 13-10; a front-side permeated water line and a front-side permeated water line through which front-side permeated water 12-1 and rear-side permeated water 12-2 are discharged to the exterior, respectively, which are separated fore and aft, respectively, of the permeated water pipe 14 blocked by the plug 17; a pressure regulating valve 20 that is mounted in the raw water supplying line and regulates the supply pressure of the raw water 11;

Abstract: The semiconductor device includes a first conductive layer over a substrate; an oxide semiconductor layer which covers the first conductive layer; a second conductive layer in a region which is not overlapped with the first conductive layer over the oxide semiconductor layer; an insulating layer which covers the oxide semiconductor layer and the second conductive layer; and a third conductive layer in a region including at least a region which is not overlapped with the first conductive layer or the second conductive layer over the insulating layer.

Abstract: A reverse osmosis membrane apparatus has a plurality of high pressure vessels 12a and 12b in parallel with each other with respect to introducing passage 18 of clarified seawater obtained by subjecting raw seawater to sterilization and removal of relatively large foreign substances. The high pressure vessels 12a and 12b have first-stage reverse osmosis membrane elements 14a and 14b, respectively. Concentrated seawater subjected to membrane separation in the high pressure vessels 12a and 12b flows into a high pressure vessel 16. In the high pressure vessel 16, a plurality of reverse osmosis membrane elements 42 are arranged in series. When a detected value obtained by a differential pressure meter 56a or 56b provided for the high pressure vessel 12a or 12b exceeds a threshold value, introduction of the clarified seawater is stopped, and the reverse osmosis membrane element is washed or replaced.

Abstract: A DC-DC converter is driven by single high input voltage, and includes a voltage converter circuit and a control circuit. The increase of the occupied area of the DC-DC converter is suppressed. The DC-DC converter includes an input terminal to which input voltage is applied; a voltage converter circuit connected to the input terminal, and including a first transistor; a control circuit configured to control the voltage converter circuit, and including a second transistor including a silicon material in a channel formation region; and a third transistor provided between the input terminal and the control circuit, and configured to convert the input voltage into power supply voltage that is lower than the input voltage. The first transistor and the third transistor include an oxide semiconductor material in channel formation regions. The first transistor and the third transistor are stacked over the second transistor with an insulating film provided therebetween.

Abstract: A photoelectric conversion module in which an output voltage defect is suppressed is obtained by forming in parallel over a substrate n number (n is a natural number) of integrated photoelectric conversion devices each including a plurality of cells that are connected in series, and electrically connecting in parallel n?1 number or less of integrated photoelectric conversion devices with normal electrical characteristics and excluding an integrated photoelectric conversion device with a characteristic defect such as a short-circuit between top and bottom electrodes or a leak current due to a structural defect or the like formed in a semiconductor layer or the like.

Abstract: A medical treatment endoscope includes: an insertion portion which has a lumen formed along a longitudinal axis of the insertion portion and is configured to be inserted into a body cavity, a lateral opening portion which extends in a lateral surface of the insertion portion, from a distal end surface of the insertion portion to a proximal end side of the insertion portion, an elastic member which is provided in an inner wall of the lumen at a position separated from an edge of a proximal end of the insertion portion in a direction toward a distal end side of the insertion portion, and a tubular arm which includes a bendable bending part provided at a distal end side of the tubular arm.

Abstract: A control program generation device includes a control program reuse library for storing a plurality of control modules, and an architecture pattern library for storing a plurality of units of pattern information representing architecture patterns. In addition, the control program generation device correlates and displays architecture patterns selected from the architecture pattern library, program structure of control programs including the architecture patterns, execution times of the control modules, and time constraints. Moreover, in addition, the control program generation device connects control modules of the control program reuse library on the basis of the program structure.

Abstract: An object is to reduce degradation of circuit operation and to reduce the area of the entire circuit. A power source circuit is provided with a first terminal to which first voltage is input; a second terminal to which second voltage is input; a comparator being connected to the first terminal and the second terminal and comparing the first voltage and the second voltage; a digital circuit averaging, integrating, and digital pulse width modulating a first digital signal output from the comparator; a PWM output driver amplifying a second digital signal output from the digital circuit; and a smoothing circuit smoothing the amplified second digital signal.

Abstract: The semiconductor device includes a first conductive layer over a substrate; an oxide semiconductor layer which covers the first conductive layer; a second conductive layer in a region which is not overlapped with the first conductive layer over the oxide semiconductor layer; an insulating layer which covers the oxide semiconductor layer and the second conductive layer; and a third conductive layer in a region including at least a region which is not overlapped with the first conductive layer or the second conductive layer over the insulating layer.

Abstract: It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first conductive layer over a substrate, a first insulating layer which covers the first conductive layer, an oxide semiconductor layer over the first insulating layer that overlaps with part of the first conductive layer and has a crystal region in a surface part, second and third conductive layers formed in contact with the oxide semiconductor layer, an insulating layer which covers the oxide semiconductor layer and the second and third conductive layers, and a fourth conductive layer over the insulating layer that overlaps with part of the oxide semiconductor layer.

Abstract: Generation of ripples and the decrease in the output voltage of a photoelectric conversion device are suppressed. The photoelectric conversion device includes a first photoelectric conversion element; a first voltage conversion element for converting the output voltage of the first photoelectric conversion element; a second photoelectric conversion element whose characteristic is different from the characteristic of the first photoelectric conversion element; a second voltage conversion element for converting the output voltage of the second photoelectric conversion element; and a control element for controlling timing of the first voltage conversion element and the second voltage conversion element.

Abstract: Device identification code is generated by combining model code as model information and a communication identification number that is allocated to a communication adapter. Therefore, as long as an electrical device has a model code, it is not necessary to separately store in advance an identification code for identifying the electrical device. Consequently, it is possible to reduce the capacity of the storage device that is used for the electrical device, and as a result, it is possible to simplify the construction of the electrical device. Moreover, devices that form a network can be identified by using device identification code.

Abstract: A test device simulator simulates the behavior of a test device to be tested on the basis of content indicating an input operation by a user, data transmitted from an air-conditioning system simulator, and device object data stored in a data storage. In the case in which the simulation generates data to transmit to the air-conditioning system simulator, the test device simulator transmits that data to the air-conditioning system simulator. The air-conditioning system simulator includes multiple simulation process sections. Each simulation process section, on the basis of content indicated by the input operation performed by the user on the device simulated by the simulation process section itself, data addressed to that device transmitted from the test device simulator, and the device object data stored in the data storage and corresponding to that device, simulates the behavior of that device.

Abstract: A DMA controller (40) comprises a reading start address register (402) storing a reading start address from which reading starts; a reading data size register (403) storing the size of data to be read in a single reading operation; an offset value register (404) storing an offset value for updating the reading start address after the reading operation ends; a repetition upper limit value register (405) storing the upper limit value of the number of times of repetition of the reading operation; and a repetition counter register (406) storing the number of times of repetition of the reading operation. The controller (401) of the DMA controller (40) outputs an interrupt signal indicating that the processing of the DMA controller (40) ends when the value stored in the repetition counter register (406) reaches the value stored in the repetition upper limit value register (405).

Abstract: A device identification code for identifying an electric device is generated based on electric device information predefined for each electric device. Accordingly, it becomes unnecessary for a communication adapter to be provided with a memory device storing the device identification code for identifying the electric device. A structure of the communication adapter can be therefore simplified, resulting in an avoidance of a network complication. Furthermore, precise identification of the electric device constituting the network can be accomplished using the device identification code.

Abstract: A DC converter circuit having high reliability is provided. The DC converter circuit includes: an inductor configured to generate electromotive force in accordance with a change in flowing current; a transistor including a gate, a source, and a drain, which is configured to control generation of the electromotive force in the inductor by being on or off; a rectifier in a conducting state when the transistor is off; and a control circuit configured to control on and off of the transistor. The transistor includes an oxide semiconductor layer whose hydrogen concentration is less than or equal to 5×1019 atoms/cm3 as a channel formation layer.

Abstract: It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first conductive layer over a substrate, a first insulating layer which covers the first conductive layer, an oxide semiconductor layer over the first insulating layer that overlaps with part of the first conductive layer and has a crystal region in a surface part, second and third conductive layers formed in contact with the oxide semiconductor layer, an insulating layer which covers the oxide semiconductor layer and the second and third conductive layers, and a fourth conductive layer over the insulating layer that overlaps with part of the oxide semiconductor layer.

Abstract: It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first conductive layer over a substrate, a first insulating layer which covers the first conductive layer, an oxide semiconductor layer over the first insulating layer that overlaps with part of the first conductive layer and has a crystal region in a surface part, second and third conductive layers formed in contact with the oxide semiconductor layer, an insulating layer which covers the oxide semiconductor layer and the second and third conductive layers, and a fourth conductive layer over the insulating layer that overlaps with part of the oxide semiconductor layer.

Abstract: A treatment endoscope includes that a body cavity insertion portion which includes a main body distal hard portion, and a main body curving portion provided to a proximal side of the main body distal hard portion, one or more treatment arm/arms projecting to a distal side from the main body distal hard portion, each of the treatment arm/arms including a curving mechanism, an operation portion provided to the proximal side of the body cavity insertion portion, and an observation section configured to image a field of view in a body cavity, the observation section including an imaging section provided within the main body distal hard portion. The treatment endoscope includes that an operation portion attaching/detaching mechanism configured to removably attach the operation portion to the body cavity insertion portion, and an observation section attaching/detaching mechanism configured to removably attach the observation section to the body cavity insertion portion.

Abstract: A data acquirer acquires data from another device and stores the data in a buffer. A communicator transmits the data stored in the buffer to a data collection server. A line state acquirer acquires information on a line (line state data) and accumulates and stores the acquired line state data in a line state storer. A transmission data amount determiner determines a data amount transmittable by one connection to the data collection server based on the line state data stored in the line state storer. A transmission schedule generator generates a transmission schedule for data based on a total amount of data stored in the buffer and the data amount transmittable by one connection. The communicator transmits data according to the transmission schedule.