Abstract: By connecting a protection diode (71) wherein p-anode layers (21) and n-cathode layers (22) are alternately formed in a polysilicon layer, and p-n junctions (74) that are in a reverse blocking state when there is a forward bias are alternately short circuited with a metal film (53), to a power semiconductor element (IGBT (72)), it is possible to achieve a balance between a high breakdown capability and a smaller chip area, a rise of breakdown voltage is suppressed even when a clamping voltage is repeatedly applied, and furthermore, it is possible to prevent destruction caused by a negative surge voltage input into a gate terminal (G).

Abstract: A buffer circuit is provided between a gate terminal of a pull-down transistor and a threshold circuit receiving a gate signal as an input signal. A voltage applied to an output terminal of a power semiconductor element from an external battery power supply is supplied to the buffer circuit through a resistive element. The buffer circuit converts the level of an on-signal output from the threshold circuit into a voltage higher than the threshold of the pull-down transistor, so that the pull-down transistor operates surely to turn off the power semiconductor element even when the level of the gate signal is low. Thus, there is provided a semiconductor integrated circuit device having a power semiconductor element which can be turned off by sure operation of a pull-down semiconductor element.

Abstract: A buffer circuit is provided between a gate terminal of a pull-down transistor and a threshold circuit receiving a gate signal as an input signal. A voltage applied to an output terminal of a power semiconductor element from an external battery power supply is supplied to the buffer circuit through a resistive element. The buffer circuit converts the level of an on-signal output from the threshold circuit into a voltage higher than the threshold of the pull-down transistor, so that the pull-down transistor operates surely to turn off the power semiconductor element even when the level of the gate signal is low. Thus, there is provided a semiconductor integrated circuit device having a power semiconductor element which can be turned off by sure operation of a pull-down semiconductor element.

Abstract: There is disclosed a process for producing silanes by reducing polyhalosilane with a mixture of alkyl aluminum hydride and trialkyl aluminum, in which a treatment for reducing the content of trialkyl aluminum in the mixture is lowered to 10 mol. % or less of alkyl aluminum hydride prior to the reduction reaction.As to methods for reducing the content of trialkyl aluminum in the mixture, there are provided, for example, distillation, recrystallization, separation by complex formation, pyrolysis of trialkyl aluminum and decomposition by hydrogenation of trialkyl aluminum.

Abstract: Glyoxal may be produced with a high yield by bringing a gas, which has been formed by diluting ethylene glycol and molecular oxygen with an inert gas, into contact at a high temperature with a silver catalyst in the simultaneous presence of phosphorus or a phosphorus compound so as to effect the gas phase oxidation of the ethylene glycol.In the above process, it is possible to suppress the formation of glycolaldehyde, a reaction intermediate, and also to enhance the stability of the reaction by using silver powder having particle sizes of 1.times.10.sup.-3 mm or smaller as at least part of the silver catalyst.

Abstract: A method for regenerating a catalyst containing molybdenum as an active component comprising subjecting a catalyst, which has been deactivated through the use for a reaction, with or without a molybdenum source added thereto, to a heat treatment in a reducing gas atmosphere under specific temperature conditions and then subjecting same to a further heat treatment in a gaseous atmosphere containing molecular oxygen and at specific temperature conditions.

Abstract: Byproducts obtained in the preparation of phthalic anhydride are treated by heating the byproducts to a temperature sufficient to maintain the byproducts in a molten state and thereafter atomizing the molten byproducts with atomizing air having a temperature of at least 60.degree. C. for combustion. The byproducts may be low boiling point and/or high boiling point fractions obtained in the purification step by distillation of crude phthalic anhydride produced by the partial oxidation of ortho-xylene or naphthalene.

Abstract: A chemical reaction furnace system having a reaction furnace, a reaction gas exhaust flowpath, and a gas scrubbing device in the exhaust flowpath and having a capability of controlling the furnace top pressure is characterized by the provision of a turbine in the exhaust flowpath downstream from the scrubbing device and being operable to recover energy in the reaction gas, a gas bypass flowpath branched from the exhaust flowpath at a point thereof between the scrubbing device and the turbine and bypassing the turbine, turbine inlet pressure controlling means, and a septum bypass valve installed in the bypass flowpath and operating in response to control by the turbine inlet pressure controlling means to control the turbine inlet gas pressure.