Abstract: A polymer electrolyte fuel cell including a plurality of membrane electrode assemblies and a plurality of conductive separators, wherein the plurality of conductive separators include at least one separator comprising: a fuel gas inlet-side manifold aperture; a fuel gas outlet-side manifold aperture; a gas flow channel for fuel gas formed on an anode-side of the separator; an inlet-side through hole and an outlet-side through hole penetrating the separator which are formed at an inlet-side end and an outlet-side end of the gas flow channel for fuel gas; and an inlet-side connection groove and an outlet-side connection groove for connecting the inlet-side and outlet-side through holes with the fuel gas inlet-side manifold aperture and the fuel gas outlet-side manifold aperture, respectively, which are formed on a cathode-side of the separator.

Abstract: A high-performance semiconductor device using an SOI substrate in which a low-heat-resistance substrate is used as a base substrate. Further, a high-performance semiconductor device formed without using chemical polishing. Further, an electronic device using the semiconductor device. An insulating layer over an insulating substrate, a bonding layer over the insulating layer, and a single-crystal semiconductor layer over the bonding layer are included, and the arithmetic-mean roughness of roughness in an upper surface of the single-crystal semiconductor layer is greater than or equal to 1 nm and less than or equal to 7 nm. Alternatively, the root-mean-square roughness of the roughness may be greater than or equal to 1 nm and less than or equal to 10 nm. Alternatively, a maximum difference in height of the roughness may be greater than or equal to 5 nm and less than or equal to 250 nm.

Abstract: A motorcycle can include a frame having first and second side frame members. A swing-type motor unit can be mounted on the frame for up and down swinging movement. The frame can include cross members disposed on two sides of a pivot connecting the motor unit to the frame.

Abstract: The object of the present invention is to provide a laser irradiation apparatus being able to enlarge the beam spot to a large degree compared with that of the CW laser, to suppress the thermal damage to the glass substrate, and to form an aggregation of crystal grains including a single crystal extending long in a scanning direction by growing the crystal continuously in the scanning direction. The laser irradiation of the present invention comprises a pulsed laser oscillator, a non-linear optical element for converting the wavelength of the laser light emitted from the pulsed laser oscillator, and an optical system for condensing the laser light whose wavelength is converted on a semiconductor film, wherein the pulsed laser oscillator has a repetition rate in the range of 10 MHz to 100 GHz.

Abstract: An object of the present invention is to provide a method for manufacturing a semiconductor device having a semiconductor element capable of reducing a cost and improving a throughput with a minute structure, and further, a method for manufacturing a liquid crystal television and an EL television. According to one feature of the invention, a method for manufacturing a semiconductor device comprises the steps of: forming a light absorption layer over a substrate, forming a first region over the light absorption layer by using a solution, generating heat by irradiating the light absorption layer with laser light, and forming a first film pattern by heating the first region with the heat.

Abstract: Objects of the present invention is to reduce a number of scanning a linear laser, to shorten the amount of time for laser annealing, and to reduce a manufacturing process, a manufacturing time, and manufacturing cost of a semiconductor device. In this invention, a gas at high temperature is locally blown so as to overlap at an irradiation surface of linear laser light. The linear laser light can be obtained by injecting laser light radiated from a laser oscillator into a lens. The gas at high temperature can be obtained by heating a gas which is compressed using a gas compressor, by a nozzle type heater. The heated has is sprayed so as to overlap with the irradiation surface of the linear laser light.

Abstract: An organic semiconductor device with a vertical structure having both functions of an organic thin film transistor and light-emitting element, where the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled in the case of forming a gate electrode with an organic conductive film, and a manufacturing method thereof. The above organic semiconductor device has such a structure that organic semiconductor films are sandwiched between a pair of electrodes functioning as a source electrode and drain electrode of an organic thin film transistor and also functioning as an anode and cathode of a light-emitting element, a thin organic conductive film functioning as a gate electrode is sandwiched between the organic semiconductor films, and a part of the organic conductive film is electrically connected to an auxiliary electrode, thereby the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled.

Abstract: It is an object of the present invention to provide a laser irradiation apparatus, a laser irradiation method, and a method for manufacturing a semiconductor device using the laser irradiation method that can suppress the energy distribution of the laser beam. The present invention provides a laser irradiation apparatus including a laser oscillator oscillating a pulsed laser beam, a lens assembly having a plurality of optical systems, position control means for controlling the position of the lens assembly to select at least two from the plurality of optical systems in synchronization with oscillations of a plurality of pulses of the pulsed laser beam, wherein the selected plurality of optical systems forms a plurality of pulses with spatial energy distribution inverted or rotated.

Abstract: An organic semiconductor device with a vertical structure having both functions of an organic thin film transistor and light-emitting element, where the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled in the case of forming a gate electrode with an organic conductive film, and a manufacturing method thereof. The above organic semiconductor device has such a structure that organic semiconductor films are sandwiched between a pair of electrodes functioning as a source electrode and drain electrode of an organic thin film transistor and also functioning as an anode and cathode of a light-emitting element, a thin organic conductive film functioning as a gate electrode is sandwiched between the organic semiconductor films, and a part of the organic conductive film is electrically connected to an auxiliary electrode, thereby the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled.

Abstract: The invention relates to a laser treatment apparatus including a laser oscillator, an interlock provided in the laser oscillator, a movable table which moves with a certain movement period, a timer, an interlock provided in the timer, a sensor which can detect movement of the movable table, and a computer, in which the timer starts measuring time when the sensor senses passage of the movable table, and when the movable table does not pass the sensor even after the movement period, conduction between contacts of the interlock provided in the timer is blocked to operate the interlock in the laser oscillator, thereby stopping laser output. The invention also relates to a laser treatment method using the laser treatment apparatus.

Abstract: There has been a problem in that kinds of conventional light-emitting materials are not sufficient; therefore, choices of materials and manufacturers of light emitting materials are limited, resulting in an expensive light-emitting device. The present invention provides a novel method for manufacturing a light-emitting material suitable for mass production that can be manufactured at a low cost, and a novel light-emitting material which can provide light emission with high intensity. A mixture in which CuAlS2 is added in a small amount into ZnS as a base material is put in a reaction container. Then, the reaction container is hermetically sealed and the mixture is baked. Note that the reaction container is preferably hermetically sealed in a state where a reduced pressure is held in the reaction container. Further, in a light-emitting element using a light-emitting material obtained, electroluminescence with high luminance can be obtained.

Abstract: The invention relates to a laser treatment apparatus including a laser oscillator, an interlock provided in the laser oscillator, a movable table which moves with a certain movement period, a timer, an interlock provided in the timer, a sensor which can detect movement of the movable table, and a computer, in which the timer starts measuring time when the sensor senses passage of the movable table, and when the movable table does not pass the sensor even after the movement period, conduction between contacts of the interlock provided in the timer is blocked to operate the interlock in the laser oscillator, thereby stopping laser output. The invention also relates to a laser treatment method using the laser treatment apparatus.

Abstract: When annealing of a semiconductor film is conducted using a plurality of lasers, each of the distances between laser irradiation regions is different. When a lithography step is conducted in accordance with a marker which is formed over a substrate in advance after the step, light-exposure is not correctly conducted to a portion crystallized by laser. By using a laser irradiation region obtained on a laser irradiation step as a marker, light-exposure is conducted by making a light-exposure position of a stepper coincide with a large grain size region in the laser irradiation region. A large grain size region and a poorly crystalline region are detected by utilizing a thing that scattering intensity of light is different between the large grain size region and the poorly crystalline region, thereby determining a light-exposure position.

Abstract: A decrease in voltage in a polymer electrolyte fuel cell comprising stack of unit cells caused by the temperature difference between the cells located at the ends and the other cells due to a differential in heat dissipation from end plates is prevented by controlling the cooling temperature of the cells closest to the end plates of the fuel cell without affecting the output voltage of the cells in the middle by not including a coolant flow channel in the conductive separator plate between at least one of the end plates and the unit cell located closest to the one of the end plates.

Abstract: A method of fabricating a semiconductor device prevents agglomeration of a seed metal layer in a recess. A recess is formed in a dielectric layer formed on or over a wafer. A seed metal layer (e.g., Cu or Cu alloy) is then formed on a bottom face and an inner side face of the recess. Subsequently, a surface of the seed metal layer is oxidized by exposing the surface of the seed metal layer to an oxygen-containing gas or the atmospheric air before agglomeration of the seed metal layer occurs, thereby forming an oxide layer in the surface of the seed metal layer. A filling metal (e.g., Cu or Cu alloy) is plated on the oxide layer of the seed metal layer while using the seed metal layer whose surface is oxidized as an electrode, thereby filling the recess with the metal.

Abstract: A method of producing a primary amine by the hydrogenation of a nitrile in the presence of a hydrogenation catalyst. The hydrogenation catalyst contains at least one metal selected from the group consisting of nickel, cobalt and iron. Before use in the hydrogenation of nitrile, the hydrogenation catalyst is pretreated with at least one treating agent selected from the group consisting of hydrocarbons, alcohols, ethers, esters and carbon monoxide at 150 to 500° C.

Abstract: It is an object of the present invention to provide a laser irradiation apparatus, a laser irradiation method, and a method for manufacturing a semiconductor device using the laser irradiation method that can suppress the energy distribution of the laser beam. The present invention provides a laser irradiation apparatus including a laser oscillator oscillating a pulsed laser beam, a lens assembly having a plurality of optical systems, position control means for controlling the position of the lens assembly to select at least two from the plurality of optical systems in synchronization with oscillations of a plurality of pulses of the pulsed laser beam, wherein the selected plurality of optical systems forms a plurality of pulses with spatial energy distribution inverted or rotated each other.

Abstract: A polymer electrolyte fuel cell of the present invention includes a hydrogen ion-conductive polymer electrolyte membrane, an anode and a cathode sandwiching the hydrogen ion-conductive polymer electrolyte membrane, an anode-side conductive separator plate having a gas flow channel for supplying a fuel gas to the anode, and a cathode-side conductive separator plate having a gas flow channel for supplying an oxidant gas to the cathode.

Abstract: It is an object of the present invention to provide a method for manufacturing a semiconductor device, capable of keeping a peeling layer from being peeled from a substrate in the phase before the completion of a semiconductor element and peeling a semiconductor element rapidly. It is considered that a peeling layer tends to be peeled from a substrate because the stress is applied to a peeling layer due to the difference in thermal expansion coefficient between a substrate and a peeling layer, or because the volume of a peeling layer is reduced and thus the stress is applied thereto by crystallization of the peeling layer due to heat treatment. Therefore, according to one feature of the invention, the adhesion of a substrate and a peeling layer is enhanced by forming an insulating film (buffer film) for relieving the stress on the peeling layer between the substrate and the peeling layer before forming the peeling layer over the substrate.

Abstract: The semiconductor device of the present invention includes a first interconnection, a via-plug that is connected to the first interconnection, and a second interconnection that is formed as a single unit with the via-plug. The cross-sectional shape of the via-plug is such that the plug sidewall angle, which indicates the angle of the via-plug sidewall with respect to the surface of the first interconnection, is a positive angle; and moreover, at least two points exist between the base and the top of the via-plug on at least one sidewall of the two sidewalls of the cross-sectional shape of the via-plug at which the plug sidewall angle attains a maximum value. Since shapes that would give rise to the occurrence of concentrations of stress are not formed in the via-plug sidewalls, metal is more effectively embedded in the via-hole, and the incidence of voids is prevented.