Abstract: It is an object of the present invention to provide a method for manufacturing a semiconductor device, capable of keeping a peeling layer from being peeled from a substrate in the phase before the completion of a semiconductor element and peeling a semiconductor element rapidly. It is considered that a peeling layer tends to be peeled from a substrate because the stress is applied to a peeling layer due to the difference in thermal expansion coefficient between a substrate and a peeling layer, or because the volume of a peeling layer is reduced and thus the stress is applied thereto by crystallization of the peeling layer due to heat treatment. Therefore, according to one feature of the invention, the adhesion of a substrate and a peeling layer is enhanced by forming an insulating film (buffer film) for relieving the stress on the peeling layer between the substrate and the peeling layer before forming the peeling layer over the substrate.

Abstract: A rear light assembly for a straddle type vehicle is provided that enhances illumination of the rear side of the vehicle while also allowing the rider sufficient cargo space in the trunk of the vehicle. The rear light assembly can comprise a movable cover on the trunk space, a first light unit extending in a generally horizontal direction, and a second light unit extending in a generally vertical direction. The assembly can also include two vertical light units, one positioned on the left side of the movable cover and the other positioned on the right side of the movable cover, and one horizontal light positioned below the movable cover. Connectors and fastening mechanisms can be utilized to connect the light units and movable cover of the assembly. In addition, the first light unit and the second light unit can both be a light-emitting diode (LED) light source.

Abstract: The present invention provides a light emitting material having high electric conductivity, and further a light emitting element which can be driven at low voltage. Light emitting devices and electronic devices with reduced power consumption can also be provided. A light emitting element including a light emitting material is provided in which a first electrode 101, a first insulating layer 102, a light emitting layer 103, a second insulating layer 104 and a second electrode 105 are provided over a first electrode 101, the light emitting layer 103 includes an inorganic compound that is any of a sulfide, a nitride and an oxide as a base material; at least one element selected from the group consisting of copper, silver, aluminum, fluorine and chlorine, as a luminescent center material; manganese; and either gallium phosphide or gallium antimonide.

Abstract: It is an object of the present invention to provide a new light-emitting element and manufacturing method thereof in which actively diffusing a material into a film formation layer is utilized where an interface state and interdiffusion between a compound semiconductor substrate and a film formation layer formed thereover are not considered to be problematic. According to one feature of the present invention, unevenness is formed over the surface of a compound semiconductor substrate through chemical treatment, a compound semiconductor layer is formed over the surface of the compound semiconductor substrate having unevenness, atoms of the compound semiconductor substrate are diffused into the compound semiconductor layer through heat treatment, a first conductive layer is formed over the compound semiconductor substrate, and a second conductive layer is formed over the compound semiconductor layer.

Abstract: It is an object of the present invention to provide a light-emitting material with high light emission intensity. It is another object to provide a light-emitting element with high light emission efficiency. Moreover, it is another object to provide a light-emitting device and an electronic appliance with reduced power consumption. A light-emitting material contains at least a light-emitting substance, a base material, and an additive which is an element belonging to group 14 of the periodic table or a compound containing two or more kinds of elements belonging to group 14, or a compound containing at least two or more kinds of elements each belonging to a different group chosen from group 13, group 14, and group 15. Due to the light-emitting material, a light-emitting element and an electronic appliance which has high light emission efficiency and can be driven at a low voltage can be obtained.

Abstract: A light emitting element that can be driven at a low voltage is provided. Further, a light emitting device and an electronic device with reduced power consumption are provided. A light emitting element is provided that includes a substrate 100, and a first electrode 101, a first insulating layer 102, a light emitting layer 103, a second insulating layer 104, and a second electrode 105, which are over the substrate 100. The light emitting layer 103 includes a compound ABC2, referred to as a ‘chalcopyrite’ (wherein A is Cu or Ag, B is Al, Ga, or In, and C is S, Se, or Te). By employing such a structure, a light emitting element that can be driven at a low voltage can be provided.

Abstract: It is an object of the present invention to provide a light-emitting device with high current efficiency and high display quality, in which a change in luminance with time is suppressed. The light-emitting device is provided with a plurality of light-emitting elements in each of which a plurality of light-emitting units each including at least one light-emitting layer are connected in series between a pair of electrodes. Between one of light-emitting units and the other light-emitting unit, an intermediate conductive layer is provided in the light-emitting unit. The light-emitting layer includes base material which is a compound containing an element belonging to group 2 and an element belonging to group 16 or a compound containing an element belonging to group 12 and an element belonging to group 16, and an impurity element which is an emission center. This structure makes it possible to increase light emission luminance without increasing current density.

Abstract: It is an object of the present invention to provide a light emitting element which can be driven at a low voltage. Other objects of the present invention are to provide a light emitting element with a high luminescent efficiency; a light emitting element with a high luminance; a light emitting element having long-life luminescence; a light emitting element and an electronic device having reduced power consumption; and a light emitting element and an electronic device which can be manufactured at low cost. The light emitting element has a light emitting layer and a barrier layer between a first electrode and a second electrode, the light emitting layer contains a base material and an impurity element, and the barrier layer is provided so as to be in contact with the first electrode. Light emission is obtained when a voltage is applied such that a potential of the second electrode becomes higher than a potential of the first electrode.

Abstract: It is an object to provide a light emitting element capable of low-voltage driving; with high luminous efficiency; with high emission luminance; and with long emission lifetime. It is another object to provide a light emitting device and an electronic appliance in which power consumption is reduced; and which can be manufactured at low cost. A light emitting element is provided, including a light emitting layer and a layer including a composite material between a first electrode and a second electrode, where the light emitting layer includes a base material and an impurity element, the layer including the composite material includes an organic compound and an inorganic compound, the layer including the composite material is provided to be in contact with the second electrode, and light emission is obtained by application of a voltage so that an electric potential of the second electrode is higher than that of the first electrode.

Abstract: A motorcycle can include a frame having first and second side frame members. A swing-type motor unit can be mounted on the frame for up and down swinging movement. Te frame can include cross members disposed on two sides of a pivot connecting the motor unit to the frame.

Abstract: An object of the present invention is to provide a film forming method for forming a film with reduced defect and to provide a film forming method for forming a film with a uniform quality. In addition, another object is to provide a manufacturing method of a light emitting element which can be driven with low voltage. Further, another object is to provide a manufacturing method of a light emitting element with high light emission efficiency. A film with reduced defect and a uniform quality can be formed by fixing a substrate to a substrate holding unit so that at least a part of a surface of the substrate is exposed, evaporating a vapor deposition material from an evaporation source filled with the vapor deposition material, irradiating the vapor deposition material which is evaporated with a laser beam, and depositing the vapor deposition material on the surface of the substrate.

Abstract: A light emitting element is provided, which comprises a pair of electrodes, a p-type semiconductor layer, and an n-type semiconductor layer. The p-type semiconductor layer and the n-type semiconductor layer are interposed between the pair of electrodes. The p-type semiconductor layer includes a first sulfide, and the n-type semiconductor layer includes a second sulfide. At least one of the p-type semiconductor layer and the n-type semiconductor layer includes a light emitting center.

Abstract: In conducting laser annealing using a CW laser or a quasi-CW laser, productivity is not high as compared with an excimer laser and thus, it is necessary to further enhance productivity. According to the present invention, a fundamental wave is used without putting laser light into a non linear optical element, and laser annealing is conducted by irradiating a semiconductor thin film with pulsed laser light having a high repetition rate. A laser oscillator having a high output power can be used for laser annealing, since a non linear optical element is not used and thus light is not converted to a harmonic. Therefore, the width of a region having large grain crystals that is formed by scanning once can be increased, and thus the productivity can be enhanced dramatically.

Abstract: An object is to provide a novel light emitting material. Another object is to provide a light emitting device and an electronic device with reduced power consumption. Still another object is to provide a light emitting device and an electronic device which can be manufactured at low cost. Provided is a light emitting element including a base material, a first impurity element, a second impurity element, and a third impurity element. The base material is one of ZnS, CdS, CaS, Y2S3, Ga2S3, SrS, BaS, ZnO, Y2O3, AlN, GaN, InN, ZnSe, ZnTe, and SrGa2S4; the first impurity element is any of Cu, Ag, Au, Pt, and Si; the second impurity element is any of F, Cl, Br, I, B, Al, Ga, In, and Tl; and the third impurity element is any of Li, Na, K, Rb, Cs, N, P, As, Sb, and Bi.

Abstract: The present invention is to provide a technique that can increase productivity with high output power by combining a plurality of laser beams on an irradiation surface without any difficulties in optical alignment According to this technique, laser beams having different wavelengths are combined using a plurality of laser oscillators and a dichroic mirror, or additionally a polarizer. For example, a first laser beam emitted from a first laser oscillator is combined with a second laser beam emitted from a second laser oscillator having different wavelength from the first laser beam in such a way that the first laser beam passes through a dichroic mirror and the second laser beam is reflected on the dichroic mirror, and the combined laser beam is projected to an irradiation surface.

Abstract: It is an object of the present invention to provide a laser irradiation apparatus and a laser irradiation method for conducting a laser process homogeneously to the whole surface of a semiconductor film. A first laser beam emitted from a first laser oscillator passes through a slit and a condensing lens and then enters an irradiation surface. At the same time, a second laser beam emitted from a second laser oscillator is delivered so as to overlap the first laser beam on the irradiation surface. Further, the laser beams are scanned relative to the irradiation surface to anneal the irradiation surface homogeneously.

Abstract: A laser irradiation apparatus is provided with a laser oscillator, an articulated beam propagator in which a plurality of pipes are connected to each other in an articulated portion, and a course change means of a laser beam in the articulated portion. At least one pipe of the plurality of pipes includes a transfer lens for suppressing stagger of a laser beam in a traveling direction, in each pipe. The articulated portion produces degree of freedom in disposition of a laser oscillator, and the transfer lens enables suppression of change in beam profile.

Abstract: It is an object of the present invention to provide a laser irradiation apparatus which can manufacture a homogenously crystallized film by varying the energy intensity of an irradiation beam in forward and backward directions of the irradiation. A laser irradiation apparatus of the present invention comprises a laser oscillator and means for varying beam intensity wherein a laser beam is obliquely incident into the irradiation surface, the laser beam is scanned relative to the irradiation surface, and the beam intensity is varied in accordance with the scanning direction. Further, the laser oscillator is a continuous wave solid-state laser, gas laser, or metal laser. A pulsed laser having a repetition frequency of 10 MHz or more can also be used.

Abstract: The present invention provides a laser irradiation apparatus and a laser irradiation method which can conduct irradiation of a laser beam accurately by correcting misalignment of an irradiation position of the laser beam from the predetermined position due to temperature change. A laser irradiation apparatus includes a laser oscillator emitting a laser beam; an XY stage provided with an irradiation object; an optical system which shapes the laser beam into a linear beam on a surface of the irradiation object provided on the XY stage; an illumination which emits light to the surface of the irradiation object; and a camera for imaging reflected light of the light on the surface of the irradiation object, in which misalignment of an irradiation position of the linear beam detected from the reflected light imaged by the camera is corrected.

Abstract: In a method of manufacturing a semiconductor device, a first wiring line composed of a copper containing metal film is formed on or above a semiconductor substrate. A first interlayer insulating film is formed on a whole surface of the semiconductor substrate to cover the first wiring line. The first interlayer insulating film is selectively removed to form a connection hole reaching the first wiring line. A barrier metal film is formed to cover an inner surface of the connection hole and then a copper containing metal film is formed to fill the connection hole. The copper containing metal film formed outside the connection hole is removed. A second interlayer insulating film is formed on a whole surface of the semiconductor substrate to cover the copper containing metal film formed in the connection hole. The second interlayer insulating film is selectively removed to form a wiring line groove such that the copper containing metal film formed in the connection hole is exposed at a bottom.