Patents by Inventor Yoshihiko Kanzawa
Yoshihiko Kanzawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20050092230Abstract: A method for fabricating a semiconductor crystal that has a first step for forming a semiconductor crystal layer (202) that contains carbon atoms and at least one kind of Group IV element other than carbon on a substrate (201), a second step for adding an impurity that is capable of reacting with oxygen to the semiconductor crystal layer (202), and a third step for removing the carbon atoms contained in the semiconductor crystal layer (202) by reacting the carbon with the impurity. This method makes it possible to fabricate a semiconductor crystal substrate in which the concentration of interstitial carbon atoms is satisfactorily reduced, thus resulting in excellent electrical properties when the substrate is applied to a semiconductor device.Type: ApplicationFiled: December 13, 2004Publication date: May 5, 2005Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Yoshihiko Kanzawa, Teruhito Ohnishi, Ken Idota, Tohru Saitoh, Akira Asai
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Patent number: 6858454Abstract: A method for measuring semiconductor constituent element content utilizes the steps of: obtaining a film thickness of an SiGeC layer formed on a semiconductor substrate by evaluation using spectroscopic ellipsometry; measuring infrared absorption spectrum of the SiGeC layer; and obtaining a C content of the SiGeC layer based on the film thickness and the infrared absorption spectrum of the SiGeC layer. The method: obtaining an apparent Ge content of the SiGeC layer by evaluation using spectroscopic ellipsometry; and obtaining an actual Ge content of the SiGeC layer based on the apparent Ge content and the C content. The constituent element content of the SiGeC layer can be easily and accurately measured according to the above-mentioned method.Type: GrantFiled: October 1, 2003Date of Patent: February 22, 2005Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Yoshihiko Kanzawa, Tohru Saitoh, Takeshi Takagi, Katsuya Nozawa
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Patent number: 6852602Abstract: A multi-layer film 10 is formed by stacking a Si1-x1-y1Gex1Cy1 layer (0?x1<1 and 0<y1<1) having a small Ge mole fraction, e.g., a Si0.785Ge0.2C0.015 layer 13, and a Si1-x2-y2Gex2Cy2 layer (0<x2?1 and 0?y2<1) (where x1<x2 and y1>y2) having a high Ge mole fraction, e.g., a Si0.2Ge0.8 layer 12. In this manner, the range in which the multi-layer film serves as a SiGeC layer with C atoms incorporated into lattice sites extends to high degrees in which a Ge mole fraction is high.Type: GrantFiled: January 30, 2002Date of Patent: February 8, 2005Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Yoshihiko Kanzawa, Tohru Saitoh, Katsuya Nozawa, Minoru Kubo, Yoshihiro Hara, Takeshi Takagi, Takahiro Kawashima
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Patent number: 6838395Abstract: A method for fabricating a semiconductor crystal that has a first step for forming a semiconductor crystal layer (202) that contains carbon atoms and at least one kind of Group IV element other than carbon on a substrate (201), a second step for adding an impurity that is capable of reacting with oxygen to the semiconductor crystal layer (202), and a third step for removing the carbon atoms contained in the semiconductor crystal layer (202) by reacting the carbon with the impurity. This method makes it possible to fabricate a semiconductor crystal substrate in which the concentration of interstitial carbon atoms is satisfactorily reduced, thus resulting in excellent electrical properties when the substrate is applied to a semiconductor device.Type: GrantFiled: December 30, 2002Date of Patent: January 4, 2005Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Yoshihiko Kanzawa, Teruhito Ohnishi, Ken Idota, Tohru Saitoh, Akira Asai
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Patent number: 6821870Abstract: A heterojunction bipolar transistor is fabricated by stacking a Si collector layer, a SiGeC base layer and a Si emitter layer in this order. By making the amount of a lattice strain in the SiGeC base layer on the Si collector layer 1.0% or less, the band gap can be narrower than the band gap of the conventional practical SiGe (the Ge content is about 10%), and good crystalline can be maintained after a heat treatment. As a result, a narrow band gap base with no practical inconvenience can be realized.Type: GrantFiled: August 21, 2002Date of Patent: November 23, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Takeshi Takagi, Koichiro Yuki, Kenji Toyoda, Yoshihiko Kanzawa
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Publication number: 20040092085Abstract: A multi-layer film 10 is formed by stacking a Si1-x1-y1Gex1Cy1 layer (0≦x1<1 and O<yl<1) having a small Ge mole fraction, e.g., a Si0.785Ge0.2C0.015 layer 13, and a Si1x-2-y2Gex2Cy2 layer (0<x2≦1 and 0≦y2<1) (where x1<x2 and y1>y2) having a high Ge mole fraction, e.g., a Si0.2Ge0.8 layer 12. In this manner, the range in which the multi-layer film serves as a SiGeC layer with C atoms incorporated into lattice sites extends to high degrees in which a Ge mole fraction is high.Type: ApplicationFiled: December 12, 2002Publication date: May 13, 2004Inventors: Yoshihiko Kanzawa, Tohru Saitoh, Katsuya Nozawa, Minoru Kubo, Yoshihiro Hara, Takeshi Takagi, Takahiro Kawashima
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Patent number: 6720587Abstract: An initial estimated value of a process condition is set, and a structure of an element of a semiconductor device is estimated by a process simulator, after which an estimated value of a physical amount measurement value is calculated. Then, an actual measurement value of a physical amount of the element of the semiconductor device, which is obtained by an optical evaluation method, and a theoretical calculated value thereof are compared with each other, so as to obtain a probable structure of the measured semiconductor device element by using, for example, a simulated annealing, or the like. A process condition in a process for other semiconductor device elements can be corrected by using the results.Type: GrantFiled: February 4, 2002Date of Patent: April 13, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Katsuya Nozawa, Tohru Saitoh, Minoru Kubo, Yoshihiko Kanzawa
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Patent number: 6713790Abstract: In the method for fabricating a semiconductor device of the present invention, a collector layer of a first conductivity type is formed in a region of a semiconductor substrate sandwiched by device isolation. A collector opening is formed through a first insulating layer deposited on the semiconductor substrate so that the range of the collector opening covers the collector layer and part of the device isolation. A semiconductor layer of a second conductivity type as an external base is formed on a portion of the semiconductor substrate located inside the collector opening, while junction leak prevention layers of the same conductivity type as the external base are formed in the semiconductor substrate. Thus, the active region is narrower than the collector opening reducing the transistor area, while minimizing junction leak.Type: GrantFiled: August 7, 2002Date of Patent: March 30, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Akira Asai, Teruhito Oonishi, Takeshi Takagi, Tohru Saitoh, Yoshihiro Hara, Koichiro Yuki, Katsuya Nozawa, Yoshihiko Kanzawa, Koji Katayama, Yo Ichikawa
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Patent number: 6674150Abstract: A heterojunction bipolar transistor is fabricated by stacking a Si collector layer, a SiGeC base layer and a Si emitter layer in this order. By making the amount of a lattice strain in the SiGeC base layer on the Si collector layer 1.0% or less, the band gap can be narrower than the band gap of the conventional practical SiGe (the Ge content is about 10%), and good crystalline can be maintained after a heat treatment. As a result, a narrow band gap base with no practical inconvenience can be realized.Type: GrantFiled: April 23, 2002Date of Patent: January 6, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Takeshi Takagi, Koichiro Yuki, Kenji Toyoda, Yoshihiko Kanzawa
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Patent number: 6660393Abstract: A B-doped Si1−x−yGexCy layer 102 (where 0<x<1, 0.01≦y<1) is epitaxially grown on a Si substrate 101 using a UHV-CVD process. In the meantime, in-situ doping is performed using B2H6 as a source gas of boron (B) which is an impurity (dopant). Next, the Si1−x−yGexCy layer 102 is annealed to form a B-doped Si1−x−yGexCy crystalline layer 103. In this case, the annealing temperature is set preferably at between 700° C. and 1200° C., both inclusive, and more preferably at between 900° C. and 1000° C., both inclusive.Type: GrantFiled: March 10, 2003Date of Patent: December 9, 2003Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Tohru Saitoh, Yoshihiko Kanzawa, Katsuya Nozawa, Minoru Kubo
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Patent number: 6649496Abstract: After the surface of a Si substrate (1) has been pretreated, an SiGeC layer (2) is formed on the Si substrate (1) using an ultrahigh vacuum chemical vapor deposition (UHV-CVD) apparatus. During this process step, the growth temperature of the SiGeC layer (2) is set at 490° C. or less and Si2H6, GeH4 and SiH3CH3 are used as Si, Ge and C sources, respectively, whereby the SiGeC layer (2) with good crystallinity can be formed.Type: GrantFiled: November 21, 2001Date of Patent: November 18, 2003Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Yoshihiko Kanzawa, Katsuya Nozawa, Tohru Saitoh, Minoru Kubo
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Patent number: 6645836Abstract: A Si substrate 1 with a SiGeC crystal layer 8 deposited thereon is annealed to form an annealed SiGeC crystal layer 10 on the Si substrate 1. The annealed SiGeC crystal layer includes a matrix SiGeC crystal layer 7, which is lattice-relieved and hardly has dislocations, and Sic microcrystals 6 dispersed in the matrix SiGeC crystal layer 7. A Si crystal layer is then deposited on the annealed SiGeC crystal layer 10, to form a strained Si crystal layer 4 hardly having dislocations.Type: GrantFiled: November 21, 2001Date of Patent: November 11, 2003Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Yoshihiko Kanzawa, Katsuya Nozawa, Tohru Saitoh, Minoru Kubo
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Publication number: 20030203599Abstract: A Si substrate 1 with a SiGeC crystal layer 8 deposited thereon is annealed to form an annealed SiGeC crystal layer 10 on the Si substrate 1. The annealed SiGeC crystal layer includes a matrix SiGeC crystal layer 7, which is lattice-relieved and hardly has dislocations, and SiC microcrystals 6 dispersed in the matrix SiGeC crystal layer 7. A Si crystal layer is then deposited on the annealed SiGeC crystal layer 10, to form a strained Si crystal layer 4 hardly having dislocations.Type: ApplicationFiled: April 16, 2003Publication date: October 30, 2003Applicant: Matsushita Electric Industrial Co. , Ltd.Inventors: Yoshihiko Kanzawa, Katsuya Nozawa, Tohru Saitoh, Minoru Kubo
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Publication number: 20030165697Abstract: A B-doped Si1-x-yGexCy layer 102 (where 0<x<1, 0.01≦y<1) is epitaxially grown on a Si substrate 101 using a UHV-CVD process. In the meantime, in-situ doping is performed using B2H6 as a source gas of boron (B) which is an impurity (dopant). Next, the Si1-x-yGexCy layer 102 is annealed to form a B-doped Si1-x-yGexCy crystalline layer 103. In this case, the annealing temperature is set preferably at between 700° C. and 1200° C., both inclusive, and more preferably at between 900° C. and 1000° C., both inclusive.Type: ApplicationFiled: March 10, 2003Publication date: September 4, 2003Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Tohru Saitoh, Yoshihiko Kanzawa, Katsuya Nozawa, Minoru Kubo
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Patent number: 6537369Abstract: A B-doped Si1−x−yGexCy layer 102 (where 0<x<1, 0.01≦y<1) is epitaxially grown on a Si substrate 101 using a UHV-CVD process. In the meantime, in-situ doping is performed using B2H6 as a source gas of boron (B) which is an impurity (dopant). Next, the Si1−x−yGexCy layer 102 is annealed to form a B-doped Si1−x−yGexCy crystalline layer 103. In this case, the annealing temperature is set preferably at between 700° C. and 1200° C., both inclusive, and more preferably at between 900° C. and 1000° C., both inclusive.Type: GrantFiled: November 27, 2001Date of Patent: March 25, 2003Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Tohru Saitoh, Yoshihiko Kanzawa, Katsuya Nozawa, Minoru Kubo
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Publication number: 20020197809Abstract: In the method for fabricating a semiconductor device of the present invention, a collector layer of a first conductivity type is formed in a region of a semiconductor substrate sandwiched by device isolation. A collector opening is formed through a first insulating layer deposited on the semiconductor substrate so that the range of the collector opening covers the collector layer and part of the device isolation. A semiconductor layer of a second conductivity type as an external base is formed on a portion of the semiconductor substrate located inside the collector opening, while junction leak prevention layers of the same conductivity type as the external base are formed in the semiconductor substrate. Thus, the active region is narrower than the collector opening reducing the transistor area, while minimizing junction leak.Type: ApplicationFiled: August 7, 2002Publication date: December 26, 2002Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Akira Asai, Teruhito Oonishi, Takeshi Takagi, Tohru Saitoh, Yoshihiro Hara, Koichiro Yuki, Katsuya Nozawa, Yoshihiko Kanzawa, Koji Katayama, Yo Ichikawa
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Publication number: 20020192918Abstract: A heterojunction bipolar transistor is fabricated by stacking a Si collector layer, a SiGeC base layer and a Si emitter layer in this order. By making the amount of a lattice strain in the SiGeC base layer on the Si collector layer 1.0% or less, the band gap can be narrower than the band gap of the conventional practical SiGe (the Gecontent is about 10%), and good crystalline can be maintained after a heat treatment. As a result, a narrow band gap base with no practical inconvenience can be realized.Type: ApplicationFiled: August 21, 2002Publication date: December 19, 2002Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Takeshi Takagi, Koichiro Yuki, Kenji Toyoda, Yoshihiko Kanzawa
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Publication number: 20020189535Abstract: Source gases and atomic hydrogen are alternately supplied onto a substrate on which a crystal is to be grown. By exposing a surface of the substrate to the atomic hydrogen, the ratio of Ge atoms attached to H atoms to all Ge atoms present on the outermost surface where growth is proceeding is increased compared with that prior to the exposure to the atomic hydrogen. If H atoms are attached to Ge atoms on the outermost surface, the phenomenon occurs in which the Ge atoms are interchanged with Si atoms present in the underlying layer. As a result, a higher proportion of Ge atoms are interchanged with Si atoms than in a conventional manufacturing method which does not involve the exposure to the atomic hydrogen. This reduces the ratio of Ge atoms to all atoms on the outermost surface where growth is proceeding and renders C atoms having low affinity with Ge atoms more likely to occupy lattice positions in the crystal.Type: ApplicationFiled: June 12, 2002Publication date: December 19, 2002Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Yoshihiko Kanzawa, Katsuya Nozawa, Tohru Saitoh, Minoru Kubo
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Patent number: 6492711Abstract: A heterojunction bipolar transistor is fabricated by stacking a Si collector layer, a SiGeC base layer and a Si emitter layer in this order. By making the amount of a lattice strain in the SiGeC base layer on the Si collector layer 1.0% or less, the band gap can be narrower than the band gap of the conventional practical SiGe (the Ge content is about 10%), and good crystalline can be maintained after a heat treatment. As a result, a narrow band gap base with no practical inconvenience can be realized.Type: GrantFiled: June 21, 2000Date of Patent: December 10, 2002Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Takeshi Takagi, Koichiro Yuki, Kenji Toyoda, Yoshihiko Kanzawa
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Publication number: 20020160584Abstract: A Si substrate 1 with a SiGeC crystal layer 8 deposited thereon is annealed to form an annealed SiGeC crystal layer 10 on the Si substrate 1. The annealed SiGeC crystal layer includes a matrix SiGeC crystal layer 7, which is lattice-relieved and hardly has dislocations, and Sic microcrystals 6 dispersed in the matrix SiGeC crystal layer 7. A Si crystal layer is then deposited on the annealed SiGeC crystal layer 10, to form a strained Si crystal layer 4 hardly having dislocations.Type: ApplicationFiled: November 21, 2001Publication date: October 31, 2002Inventors: Yoshihiko Kanzawa, Katsuya Nozawa, Tohru Saitoh, Minoru Kubo