Abstract: A seed substrate for epitaxial growth has a support substrate, a planarizing layer of 0.5 to 3 ?m provided on the top surface of the support substrate, and a seed crystal layer provided on the top surface of the planarizing layer. The support substrate includes a core of group III nitride polycrystalline ceramics and a 0.05 to 1.5 ?m encapsulating layer that encapsulates the core. The seed crystal layer is provided by thin-film transfer of 0.1 to 1.5 ?m of the surface layer of Si<111> single crystal with oxidation-induced stacking faults (OSF) of 10 defects/cm2 or less. High-quality, inexpensive seed substrates with few crystal defects for epitaxial growth of epitaxial substrates and solid substrates of group III nitrides such as AlN, AlxGa1-xN (0<X<1) and GaN are obtained.

Abstract: Provided is a method for producing a GaN layered substrate, comprising the steps of: subjecting a C-plane sapphire substrate 11 having an off-angle of 0.5° to 5° to a high-temperature nitriding treatment at 800° C. to 1,000° C. to carry out a surface treatment of the C-plane sapphire substrate; carrying out epitaxial growth of GaN on the surface of the surface-treated C-plane sapphire substrate 11 to produce a GaN film carrier having a surface of an N polar face; forming an ion implantation region 13ion by carrying out ion implantation on the GaN film 13; laminating and joining a support substrate 12 with the GaN film-side surface of the ion-implanted GaN film carrier; and separating at the ion-implanted region 13ion in the GaN film 13 to transfer a GaN thin film 13a onto the support substrate 12, to produce a GaN layered substrate 10 having, on the support substrate 12, a GaN thin film 13a having a surface of a Ga polar face.

Abstract: A nitride semiconductor substrate includes: a heat-resistant support substrate having a core including nitride ceramic enclosed in an encapsulating layer; a planarization layer provided on the heat-resistant support substrate; a silicon single crystal layer having a carbon concentration of 1×1017 atoms/cm3 or higher provided on the planarization layer; a carbonized layer containing silicon carbide as a main component and having a thickness of 4 to 2000 nm provided on the silicon single crystal layer; and a nitride semiconductor layer provided on the carbonized layer. This provides a high-quality nitride semiconductor substrate (a nitride semiconductor substrate particularly suitable for GaN-based high mobility transistors (HEMT) for high-frequency switches, power amplifiers, and power switching devices); and a method for producing the same.

Abstract: The present invention relates to a method for producing a group III compound substrate, including: a base substrate forming step for forming a group III nitride base substrate by a vapor phase synthesis method; a seed substrate forming step for forming a seed substrate on the base substrate; and a group III compound crystal forming step for forming a group III compound crystal on the seed substrate by a hydride vapor phase epitaxy method. The group III compound substrate of the present invention is produced by the method for producing a group III compound substrate of the present invention. According to the present invention, a large-sized and high-quality group III compound substrate can be obtained at a low cost while taking advantage of the high film formation rate characteristic of the hydride vapor phase epitaxy method.

Abstract: A highly thermal conductive substrate formed by bonding a device layer formed on a silicon on insulator (SOI) wafer and a buried oxide film to an insulator substrate having a thermal conductivity of 40 W/m·K or more via a low-stress adhesive, wherein a thickness of the buried oxide film is 50 to 500 nm and a thickness of the adhesive is 0.1 to 10 ?m.

Abstract: A substrate for group III nitride epitaxial growth and a method for producing the same. The substrate for group III nitride epitaxial growth includes: a supporting substrate having a structure in which a core consisting of nitride ceramics is wrapped in an encapsulating layer having a thickness of between 0.05 ?m and 1.5 ?m, inclusive; a planarizing layer provided on an upper surface of the supporting substrate, the planarizing layer having a thickness of between 0.5 ?m and 3.0 ?m, inclusive; and a seed crystal layer made of a single crystal of a group III nitride, the seed crystal layer being provided on an upper surface of the planarizing layer and having a thickness of between 0.1 ?m and 1.5 ?m, inclusive.

Abstract: An epitaxial wafer for an ultraviolet light emitting device, including, a heat-resistant first support substrate, a planarization layer with a thickness of 0.5 to 3 ?m on at least upper surface of the first support substrate, a group III nitride single crystal seed crystal layer with a thickness of 0.1 to 1.5 ?m, bonds to upper surface of the planarization layer by bonding, on the seed crystal layer, an epitaxial layer including at least a first conductivity type cladding layer containing AlxGa1-xN (0.5<x?1) as a main component, an AlGaN-based active layer, and a second conductivity type cladding layer containing AlyGa1-yN (0.5<y?1) as a main component being laminated and grown in order. Thus, an epitaxial wafer for an ultraviolet light emitting device enables high quality light emitting devices in the deep ultraviolet region (UVC: 200 to 250 nm) to be manufactured at a lower cost than before.

Abstract: A substrate for group-III nitride epitaxial growth and a method for producing the same is capable of fabricating a high-quality group III nitride single crystal at low cost. The substrate for group-III nitride epitaxial growth includes: a supporting substrate having a structure in which a core consisting of nitride ceramics is wrapped in an encapsulating layer having a thickness of between 0.05 ?m and 1.5 ?m, inclusive; a planarizing layer provided on an upper surface of the supporting substrate, the planarizing layer having a thickness of between 0.5 ?m and 3.0 ?m, inclusive; and a seed crystal layer consisting of a single crystal with a thickness of between 0.1 ?m and 1.5 ?m, inclusive, provided on an upper surface planarizing layer and having an uneven pattern on the surface.

Abstract: A base substrate (1) for a group III-V compound crystal according to the present invention includes: a ceramic core layer (2); an impurity encapsulating layer (3) configured to encapsulate the ceramic core layer (2); a bonding layer (4) on the impurity encapsulating layer; and a processed layer (5) on the bonding layer. The impurity encapsulating layer (3) is a layer made of a composition represented by a composition formula SiOXNY (here, x=0 to 2, y=0 to 1.5, and x+y>0), the bonding layer (4) is a layer made of a composition represented by a composition formula SiOx?Ny? (here, x?=1 to 2, and y?=0 to 2, and the processed layer (5) is a seed crystal layer. According to the present invention, it is possible to provide the base substrate for a group III-V compound crystal and a method for producing the same for obtaining a group III-V compound crystal having a large diameter and high quality.

Abstract: The method for manufacturing a modified aluminosilicate includes a first step of treating an aluminosilicate with an acid, a second step of primarily calcining the treated material obtained in the first step at 550° C. to 850° C., and a third step of contacting the calcined material obtained in the second step with a liquid containing one or more Group 4 elements and/or Group 5 elements, and then drying and secondarily calcining the resultant. The modified aluminosilicate includes one or more Group 4 elements and/or Group 5 elements, and exhibits an absorbance at 300 nm in an ultraviolet visible spectrum of 1.0 or higher. The method for manufacturing aromatic dihydroxy compounds includes reacting a phenol with hydrogen peroxide in the presence of a specific modified aluminosilicate.

Abstract: A method for manufacturing a group III nitride substrate is described. The method involves forming group III nitride films having a group III element face on a surface thereof, on both surfaces of a substrate, so as to produce a group III nitride film carrier. The group III nitride film carrier is subjected to ion implantation and adhered to a base substrate containing polycrystals containing a group III nitride as a major component. The group III nitride film carrier is spaced from the base substrate to transfer the ion-implanted region to the base substrate, so as to form a group III nitride film having an N face on a surface thereof on the base substrate. A group III nitride film is formed on the group III nitride by a THVPE method, so as to produce a thick film of a group III nitride film.

Abstract: Provided are the following: an MWW type zeolite which has many Brønsted acid sites when in the form of a proton type and which is highly suitable as a cracking catalyst for cumene; a method for producing same; and an application of same. The present invention provides an MWW type zeolite in which the ratio (B/A) of the peak intensity (B) attributable to tetracoordinate aluminum relative to the peak intensity (A) attributable to hexacoordinate aluminum is 2 or more in 27Al MAS NMR, when measured as an ammonium type. The present invention also provides a method for producing an MWW type zeolite, the method having a step for carrying out a hydrothermal synthesis reaction in the presence of: a seed crystal of an MWW type zeolite containing no organic structure-directing agent; and a reaction mixture containing a silica source, an alumina source, an alkali source, an organic structure-directing agent, and water. The reaction mixture satisfies the following molar ratio: X/SiO2<0.

Abstract: The present invention includes: transferring a C-plane sapphire thin film 1t having an off-angle of 0.5-5° onto a handle substrate composed of a ceramic material having a coefficient of thermal expansion at 800 K that is greater than that of silicon and less than that of C-plane sapphire; performing high-temperature nitriding treatment on the GaN epitaxial growth substrate 11 and covering the surface of the C-plane sapphire thin film 1t with a surface treatment layer 11a made of AlN; having GaN grow epitaxially on the surface treatment layer 11a; ion-implanting a GaN film 13; pasting and bonding together the GaN film-side surface of the ion-implanted GaN film carrier and a support substrate 12; performing peeling at an ion implantation region 13ion in the GaN film 13 and transferring a GaN thin film 13a onto the support substrate 12; and obtaining a GaN laminate substrate 10.

Abstract: Provided are the following: an MWW type zeolite which has many Brønsted acid sites when in the form of a proton type and which is highly suitable as a cracking catalyst for cumene; a method for producing same; and an application of same. The present invention provides an MWW type zeolite in which the ratio (B/A) of the peak intensity (B) attributable to tetracoordinate aluminum relative to the peak intensity (A) attributable to hexacoordinate aluminum is 2 or more in 27Al MAS NMR, when measured as an ammonium type. The present invention also provides a method for producing an MWW type zeolite, the method having a step for carrying out a hydrothermal synthesis reaction in the presence of: a seed crystal of an MWW type zeolite containing no organic structure-directing agent; and a reaction mixture containing a silica source, an alumina source, an alkali source, an organic structure-directing agent, and water. The reaction mixture satisfies the following molar ratio: X/SiO2<0.

Abstract: A semiconductor memory device according to an embodiment includes a substrate, a source line, a plurality of word lines, a pillar, and a first contact portion. The word lines are spaced apart from each other in a first direction. A bottom portion of the pillar reaches the source line. The first contact portion is provided on the substrate. The first contact portion is connected between the source line and the substrate. An inside of the first contact portion, or a portion in which a conductive layer included in the source line is in contact with the first contact portion, includes a portion functioning as a diode. The portion functioning as the diode is electrically connected in a reverse direction from the source line toward the substrate.

Abstract: The present invention relates to a method for producing a group III compound substrate, including: a base substrate forming step for forming a group III nitride base substrate by a vapor phase synthesis method; a seed substrate forming step for forming a seed substrate on the base substrate; and a group III compound crystal forming step for forming a group III compound crystal on the seed substrate by a hydride vapor phase epitaxy method. The group III compound substrate of the present invention is produced by the method for producing a group III compound substrate of the present invention. According to the present invention, a large-sized and high-quality group III compound substrate can be obtained at a low cost while taking advantage of the high film formation rate characteristic of the hydride vapor phase epitaxy method.

Abstract: The group III compound substrate manufacturing method of the present invention is a method for manufacturing a group III compound substrate by growing a group III compound crystal (1) by vapor phase epitaxy on a seed crystal (3) placed and fixed on a susceptor (2), the method comprising using a cleavable and separable material for at least one of the susceptor (2) and the seed crystal (3). A group III compound substrate manufactured by the group III compound substrate manufacturing method of the present invention is also provided. The present invention can provide the group III compound substrate manufacturing method which can manufacture a large-sized GaN crystal substrate of higher quality at a low cost while taking advantage of the high film forming rate of the vapor phase epitaxy method, and can provide a substrate manufactured by the method.

Abstract: A group III nitride substrate manufacturing apparatus including a rotating susceptor for holding and rotating a seed crystal in a reaction container, a heating means for heating the seed crystal, a revolving susceptor for placing thereon and revolving the rotating susceptor, a first gas ejection port for ejecting a gas of a chloride of a group III element at a predetermined angle with respect to the direction of the axis of rotation of the revolving susceptor, a second gas ejection port for ejecting a nitrogen-containing gas at the predetermined angle with respect to the direction of the axis of rotation of the revolving susceptor, a third gas ejection port for ejecting an inert gas from between the first gas ejection port and the second gas ejection port and at the predetermined angle with respect to the direction of the axis of rotation of the revolving susceptor, and an exhaust means for exhausting gas; and a group III nitride substrate manufacturing method performed by using the same.

Abstract: Provided are a device substrate with high thermal conductivity, with high heat dissipation, and with a small loss at high frequencies, and a method of manufacturing the device substrate. A device substrate 1 of the present invention can be manufactured by: provisionally bonding a Si device layer side of an SOI device substrate 10 to a support substrate 20 using a provisional bonding adhesive 31, the SOI device substrate including a Si base substrate 11, a buried layer 12 formed on the Si base substrate, having high thermal conductivity, and being an electrical insulator, and a Si device layer 13 formed on the buried layer; removing the Si base substrate 11 of the provisionally bonded SOI device substrate until the buried layer is exposed, thereby obtaining a thinned device wafer 10a; transfer-bonding the buried layer side of the thinned device wafer and a transfer substrate 40 to each other using a transfer adhesive 32 having a heat-resistant temperature of at least 150° C.

Abstract: A silicon carbide substrate production method includes: the step of providing covering layers 1b, 1b, each containing silicon oxide, silicon nitride, silicon carbonitride, or silicide, respectively on both surfaces of a base material substrate 1a carbon, silicon or silicon carbide, and turning the surface of each of the covering layers 1b, 1b into a smooth surface to prepare a support substrate 1; a step of forming a polycrystalline silicon carbide film 10 on both surfaces of the support substrate 1 by a gas phase growth method or a liquid phase growth method; and a step of separating the polycrystalline silicon carbide films from the support substrate while preserving, on the surface thereof, the smoothness of the covering layer surfaces 1b, 1b by chemically removing at least the covering layers 1b, 1b, from the support substrate 1. The silicon carbide substrate has a smooth surface and reduced internal stress.