Abstract: Each unit pixel includes a photoelectric converter, an n-type impurity region forming an accumulation diode together with the semiconductor region, the accumulation diode accumulating a signal charge generated by the photoelectric converter, an amplifier transistor including a gate electrode electrically connected to the impurity region, and an isolation region formed around the amplifier transistor and implanted with p-type impurities. The amplifier transistor includes an n-type source/drain region formed between the gate electrode and the isolation region, and a channel region formed under the gate electrode. A gap in the isolation region is, in a gate width direction, wider at a portion including the channel region than at a portion including the source/drain region.

Abstract: An imaging device includes a semiconductor layer and a pixel cell. The pixel cell includes an impurity region of a first conductivity type, the impurity region located in the semiconductor layer, a photoelectric converter electrically connected to the impurity region and located above the semiconductor layer, a first transistor having a first gate, a first source and a first drain, one of the first source and the first drain electrically connected to the impurity region, a second transistor having a second gate of a second conductivity type different from the first conductivity type, a second source and a second drain, the second transistor including the impurity region as one of the second source and the second drain, the second gate electrically connected to the impurity region, and a third transistor having a third gate, a third source and a third drain, the third gate electrically connected to the photoelectric converter.

Abstract: An imaging device includes a unit pixel cell including: a photoelectric converter that generates a signal charge through photoelectric conversion of incident light, and a signal detection circuit that detects an electric signal according to an amount of the signal charge, wherein the signal detection circuit includes: a first transistor that amplifies the electric signal, a gate of the first transistor being connected to the photoelectric converter, a second transistor having a source and a drain, one of the source and the drain being connected to the photoelectric converter, and a first capacitor having a first end and a second end, the first end being connected to the other of the source and the drain of the second transistor, the second end being connected to a first voltage source.

Abstract: An image capture device includes pixels and a signal line that is arranged across two or more of the pixels. Each pixel includes: a semiconductor substrate, a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer; a first transistor including first and second impurity regions in the substrate; a wiring layer between the substrate and the second electrode; and a capacitor arranged between the wiring layer and the substrate in a normal direction of the substrate and including a third electrode, a fourth electrode between the third electrode and the substrate, and a dielectric layer. The first impurity region is electrically connected to the second electrode, the fourth electrode is electrically connected to one of the first and second impurity regions, and at least either the third or fourth electrodes covers the first impurity region when viewed along the normal direction.

Abstract: An imaging device includes first and second pixels, arranged in a first direction, each of which includes: a photoelectric converter converting incident light into signal charge; an impurity region, in a semiconductor substrate, coupled to the photoelectric converter; a first transistor having a first gate coupled to the impurity region, and first source and drain; and a second transistor having second gate, source and drain. One of the second source and the second drain is the impurity region, and another is coupled to the first source or the first drain. The imaging device further includes a signal line, coupled to the first source or the first drain, and extends along the first direction and overlaps with both of the first and second pixels. The signal line is located on an opposite side from the impurity region across a center line of the first pixel.

Abstract: An imaging device includes: a semiconductor substrate; a first insulating layer covering a surface of the semiconductor substrate, the first insulating layer including first and second portions, a thickness of the first portion being greater than a thickness of the second portion; and an imaging cell. The imaging cell includes: a first transistor including a first gate insulating layer and an impurity region in the semiconductor substrate as one of a source and a drain; a second transistor including a gate electrode and a second gate insulating layer; and a photoelectric converter electrically connected to the gate electrode and the impurity region. The first portion covers a portion of the impurity region, the portion being exposed to the surface of the semiconductor substrate. The first gate insulating layer is a part of the first portion. The second gate insulating layer is a part of the second portion.

Abstract: A circumferential coating material which is coated on a circumferential surface of a honeycomb structure monolithically formed by extrusion, to form a circumferential coating layer, the circumferential coating material containing fused silica in a range of 20 to 75 mass %, containing a color developing agent in a range of 5 to 50 mass %, containing colloidal silica in a range of 5 to 30 mass %, and further containing a silicon based water repellent agent in a range of 1 to 10 mass % to a total mass of the fused silica, the color developing agent, and the colloidal silica.

Abstract: An information terminal is configured to extract a predetermined frequency band from a waveform of a signal of a machine component detected by a vibration sensor, to compare an analyzed frequency component and a damaging frequency resulting from a damage of the machine component, and to diagnose abnormality of the machine component. The information terminal includes a database in which the damaging frequency resulting from the damage of the machine component is preserved as a converted damaging frequency obtained by converting the damaging frequency on a basis of a predetermined rotating speed of the machine component. The damaging frequency is provided by calculating the converted damaging frequency in the database by using an actual rotating speed of the machine component. Accordingly, it is possible to keep specifications of a machine component confidential without preserving the specifications of the machine component.

Abstract: A vibration analyzer is configured to analyze vibration of a machine component and which is capable of performing an operation on a basis of a signal received from an information terminal and transmitting a signal obtained as a result of the operation to the information terminal. The vibration analyzer includes a vibration sensor configured to detect a vibration of the machine component, a filter processing unit configured to extract a predetermined frequency band from a waveform of a signal detected by the vibration sensor, and a calculation processing unit configured to analyze frequency of a waveform after filter processing obtained by the filter processing unit and to obtain spectrum data. Accordingly, it is possible to reduce a data amount to be transmitted between the analyzer and the information terminal, thereby shortening data transfer time.

Abstract: A manufacturing method of a honeycomb structure includes a forming step of forming a quadrangular pillar-shaped honeycomb formed body, a firing step of firing the honeycomb formed body and forming a quadrangular pillar-shaped honeycomb fired body, a coating step of coating at least a part of side surfaces of the honeycomb fired body with a paste-like bonding material, a honeycomb block body preparing step of bonding the plurality of honeycomb fired bodies while performing pressurizing, to prepare a honeycomb block body, and a circumference grinding step of grinding a circumferential surface of the honeycomb block body and obtaining the honeycomb structure, and in the honeycomb block body preparing step, the bonding is performed without interposing any member other than the bonding material between the honeycomb fired bodies, and the bonding material has a shear thinning property.

Abstract: A sales data processing apparatus includes a processor that functions as: a processing unit configured to perform accounting processing for a product having been subject to sales registration; and a control unit configured to cause a communication unit to transmit, when the accounting processing is performed by the processing unit, accounting data associated with the accounting processing while causing a printing unit to print the accounting data together with information indicating that the accounting data has been transmitted.

Abstract: An emergency reporting apparatus of the present invention includes: a determining unit that determines an emergency state based on an image photographed by a photographing unit while a cash drawer keeping cash therein is left open; and a reporting unit that transmits an emergency report to a predetermined report addressee based on a result of the determination made by the determining unit.

Abstract: An imaging device of the present disclosure includes: a unit pixel cell comprising a photoelectric converter converting incident light into signal charge, a semiconductor substrate, a charge storage region located in the semiconductor substrate and storing the signal charge, and a signal detection circuit detecting the signal charge; a feedback circuit negatively feeding back output of the signal detection circuit and comprising a signal line; and at least one wiring layer located between the semiconductor substrate and the photoelectric converter. The at least one wiring layer includes a portion of the signal line, the portion overlapping the unit pixel cell in a plan view. In the plan view, the portion is located on an opposite side from the charge storage region across a center line of the unit pixel cell, the center line being in parallel with a direction in which the signal line extends.

Abstract: An imaging device includes a semiconductor substrate having a surface, the semiconductor substrate including: a first layer of a first conductivity type; a second layer of a second conductivity type, the second layer being closer to the surface; and a pixel including: a photoelectric converter configured to convert light into charge; a first diffusion region of the first conductivity type, the first diffusion region facing the first layer via the second layer, configured to store at least a part of the charge; and a second diffusion region being a diffusion region closest to the first diffusion region among diffusion regions of the first conductivity type, the diffusion regions facing the first layer via the second layer. A distance between the second diffusion region and the first layer is equal to or less than 1.5 times a distance between the second diffusion region and the first diffusion region.

Abstract: An imaging device includes: a semiconductor substrate; a first pixel including: a first photoelectric converter above the semiconductor substrate, including first and second electrodes and a first photoelectric conversion layer between the first and second electrodes, configured to convert incident light into first charge; and a first charge accumulation region in the semiconductor substrate, electrically connected to the second electrode; and a second pixel including a second photoelectric converter above the semiconductor substrate, including third and fourth electrodes and a second photoelectric conversion layer between the third and fourth electrodes, configured to convert incident light into second charge; and a second charge accumulation region in the semiconductor substrate, electrically connected to the fourth electrode.

Abstract: An imaging device includes: a pixel that includes a semiconductor substrate including a first diffusion region containing a first impurity of a first conductivity type, and a second diffusion region containing a second impurity of the first conductivity type, a concentration of the first impurity in the first diffusion region being less than a concentration of the second impurity in the second diffusion region, an area of the first diffusion region being less than an area of the second diffusion region in a plan view, a photoelectric converter configured to convert light into charges, and a first transistor including a source and a drain, the first diffusion region functioning as one of the source and the drain, the second diffusion region functioning as the other of the source and the drain, the first diffusion region being configured to store at least a part of the charges.

Abstract: An imaging device including a semiconductor substrate having a surface, the semiconductor substrate including a first region of a first conductivity type and a pixel. The pixel includes a photoelectric converter; a first transistor including a second region of a second conductivity type different from the first conductivity type as a source or a drain and a first electrode as a gate, the second region being located in the semiconductor substrate and being adjacent to the first region, the first electrode being located above the surface; a contact plug coupled to the second region; and a second electrode located above the surface; wherein when seen in a direction perpendicular to the surface, a contact point between the contact plug and the second region is located between the first electrode and the second electrode.

Abstract: An imaging device includes: a semiconductor substrate; pixels arranged thereon; and a signal line through which a signal from a pixel is transferred. the pixel includes a photoelectric converter generating a charge, a region accumulating the charge, an amplification transistor having a gate electrically connected to the region, a first capacitor having a first terminal electrically connected to the region and a second terminal, a second capacitor having a third terminal electrically connected to the second terminal and a fourth terminal supplied with a voltage, a feedback transistor a source or a drain of which is electrically connected to the second terminal, and a feedback circuit forming a path through which an output from the amplification transistor is negatively fed back to the region. A part, which is from the feedback transistor to the first capacitor, of the path is closer to the semiconductor substrate than the signal line is.

Abstract: A method for manufacturing an aqueous black pigment dispersion, including the steps of subjecting a mixture containing carbon black and an aqueous medium to media-less dispersion and adding a resin having anionic groups and a basic compound after the dispersion, wherein the carbon black has a carboxylic acid group on the surface such that the value produced by dividing the amount of carboxylic acid group present on the surface by BET value is 0.8 to 5.5 (?mol/m2) and the resin having anionic groups is an urethane resin that satisfies (weight average molecular weight/acid value)<1,400 or a styrene acrylic resin that satisfies (weight average molecular weight/acid value)<120.

Abstract: A resistive memory device includes an alternating stack of insulating layers and electrically conductive layers. Sidewalls of the electrically conductive layers are laterally recessed relative to sidewalls of the insulating layers to define laterally recessed regions. Discrete clam-shaped barrier material portions are located within the laterally recessed regions. Middle electrodes include a protrusion portion embedded within a respective one of the discrete clam shaped barrier material portions and a vertically-extending portion located outside the laterally recessed regions and having a greater vertical extent than the embedded portion. A resistive memory material layer contacts the vertically-extending portion of each of the middle electrodes. A vertical conductive line contacts the resistive memory material layer.