Abstract: Provided is a method for easily producing an oxidized carbon black aqueous dispersion that can highly remove multivalent metal ions and exhibit excellent dispersion stability. A method for producing an oxidized carbon black aqueous dispersion by successively performing on an aqueous slurry of oxidized carbon black having one or more anionic functional groups on a surface thereof a neutralization step of mixing an alkali metal hydroxide and performing heating/neutralization in the presence of one or more selected from a water-soluble chelating agent and a salt thereof or after mixing an alkali metal hydroxide and performing heating/neutralization, mixing one or more selected from a water-soluble chelating agent and a salt thereof and a separation and removal step of separating and removing a multivalent metal ion chelate complex from a mixed solution obtained at the neutralization step using a separation membrane.

Abstract: An imaging device includes a semiconductor layer including an impurity region of a first conductivity type, a photoelectric converter electrically connected to the impurity region, and a transistor having a gate of a second conductivity type different from the first conductivity type, a source and a drain, the transistor including the impurity region as one of the source and the drain, the gate being electrically connected to the impurity region.

Abstract: The semiconductor device includes: a transistor having a gate electrode formed on a semiconductor substrate and first and second source/drain regions formed in portions of the semiconductor substrate on both sides of the gate electrode; a gate interconnect formed at a position opposite to the gate electrode with respect to the first source/drain region; and a first silicon-germanium layer formed on the first source/drain region to protrude above the top surface of the semiconductor substrate. The gate interconnect and the first source/drain region are connected via a local interconnect structure that includes the first silicon-germanium layer.

Abstract: An imaging device including a semiconductor substrate; a first pixel including a first photoelectric converter configured to convert incident light into charge, and a first diffusion region in the semiconductor substrate, configured to electrically connected to the first photoelectric converter and a second pixel including a second photoelectric converter, configured to convert incident light into charge, and a second diffusion region in the semiconductor substrate, configured to electrically connected to the second photoelectric converter, wherein an area of the first photoelectric converter is greater than an area of the second photoelectric converter in a plan view, both the first diffusion region and the second diffusion region overlap with the first photoelectric converter in the plan view, and neither the first diffusion region nor the second diffusion region overlaps with the second photoelectric converter in the plan view.

Abstract: An imaging device according to the present disclosure includes: a photoelectric converter generating signal charge; a semiconductor substrate including a first semiconductor layer on a surface; a charge accumulation region of a first conductivity type in the first semiconductor layer; a first transistor including, as a source or a drain, a first impurity region of the first conductivity type in the first semiconductor layer; and a blocking structure between the charge accumulation region and the first transistor. The blocking structure includes a second impurity region of a second conductivity type in the first semiconductor layer, between the charge accumulation region and the first impurity region, and a first electrode above the first semiconductor layer, overlapping at least part of the second impurity region in plan view, the first electrode being configured to be applied with a constant voltage in a period when the charge accumulation region accumulates the signal charge.

Abstract: A hydraulic circuit includes a first shift valve and a second shift valve that are provided in series between a source oil path through which oil whose pressure has been regulated flows and a first clutch oil path and a second clutch oil path. The first shift valve is selectively switchable between a first switching state where a first communicating oil path and the first clutch oil path are communicated and a second switching state where a second communicating oil path and the second clutch oil path are communicated, and the second shift valve is selectively switchable between a third switching state where the source oil path and the first communicating oil path are communicated and a fourth switching state where the source oil path and the second communicating oil path are communicated.

Abstract: An imaging device including a semiconductor substrate; a photoelectric converter stacked on the semiconductor substrate, the photoelectric converter being configured to generate a signal through photoelectric conversion of incident light; a multilayer wiring structure located between the semiconductor substrate and the photoelectric converter; and circuitry located in the multilayer wiring structure and the semiconductor substrate, the circuitry being configured to detect the signal. The the circuitry includes a first capacitance element and a second capacitance element; and a first transistor including a first source and a first drain in the semiconductor substrate and a first gate.

Abstract: An imaging device includes: a semiconductor substrate; a first pixel including: a first photoelectric converter above the semiconductor substrate, including first and second electrodes and a first photoelectric conversion layer between the first and second electrodes, configured to convert incident light into first charge; and a first charge accumulation region in the semiconductor substrate, electrically connected to the second electrode; and a second pixel including a second photoelectric converter above the semiconductor substrate, including third and fourth electrodes and a second photoelectric conversion layer between the third and fourth electrodes, configured to convert incident light into second charge; and a second charge accumulation region in the semiconductor substrate, electrically connected to the fourth electrode.

Abstract: The semiconductor device includes: a transistor having a gate electrode formed on a semiconductor substrate and first and second source/drain regions formed in portions of the semiconductor substrate on both sides of the gate electrode; a gate interconnect formed at a position opposite to the gate electrode with respect to the first source/drain region; and a first silicon-germanium layer formed on the first source/drain region to protrude above the top surface of the semiconductor substrate. The gate interconnect and the first source/drain region are connected via a local interconnect structure that includes the first silicon-germanium layer.

Abstract: An imaging device including a semiconductor substrate having a first surface, the semiconductor substrate including: a first layer containing an impurity of a first conductivity type; a second layer containing an impurity of a second conductivity type different from the first conductivity type, the second layer being closer to the first surface than the first layer is; and a pixel. The pixel includes a photoelectric converter configured to convert light into charge; and a first diffusion region containing an impurity of the first conductivity type, the first diffusion region facing the first layer via the second layer, configured to store at least a part of the charge. The first layer having a second surface adjacent to the second layer, the second surface including a convex portion toward the first surface, and the convex portion facing the first diffusion region.

Abstract: An imaging device includes a semiconductor substrate including a semiconductor region including an impurity of a first conductivity type, a first diffusion region that is in contact with the semiconductor region, that includes an impurity of a second conductivity type, and that converts incident light into charges, and a second diffusion region that includes an impurity of the second conductivity type and that accumulates at least a part of the charges flowing from the first diffusion region, a first transistor that includes a first gate electrode and that includes the second diffusion region as one of a source and a drain, a contact plug electrically connected to the second diffusion region, a capacitive element one end of which is electrically connected to the contact plug, and a second transistor that includes a second gate electrode, the second gate electrode being electrically connected to the one end of the capacitive element.

Abstract: An imaging device includes a photoelectric converter that includes a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, a first transistor that has a gate connected to the first electrode, and a first capacitor and a switching element that are connected, in series, between the first electrode and either a voltage source or a ground.

Abstract: An imaging device includes a semiconductor substrate having a surface, the semiconductor substrate including: a first layer of a first conductivity type; a second layer of a second conductivity type, the second layer being closer to the surface; and a pixel including: a photoelectric converter configured to convert light into charge; a first diffusion region of the first conductivity type, the first diffusion region facing the first layer via the second layer, configured to store at least a part of the charge; and a second diffusion region being a diffusion region closest to the first diffusion region among diffusion regions of the first conductivity type, the diffusion regions facing the first layer via the second layer. A distance between the second diffusion region and the first layer is equal to or less than 1.5 times a distance between the second diffusion region and the first diffusion region.

Abstract: An imaging device including a semiconductor substrate; pixels arranged on the semiconductor substrate in a first direction; and a signal line extending in the first direction. Each of the pixels includes a photoelectric converter generating signal charge by photoelectric conversion, a charge accumulation region that accumulates the signal charge output from the photoelectric converter, a first transistor that outputs a signal to the signal line according to an amount of the signal charge accumulated in the charge accumulation region, a capacity circuit that is coupled to a gate of the first transistor and that includes a first capacitive element, the first capacitive element including a first electrode, a second electrode and an insulating layer between the first electrode and the second electrode, at least one of the first electrode and the second electrode containing a metal. The first capacitive element is closer to the semiconductor substrate than the signal line.

Abstract: A task to be achieved by the present invention is to provide an aqueous pigment dispersion which can be used in the production of an ink having reduced coarse particles so that the ink exhibits excellent dispersibility of the pigment in the aqueous pigment dispersion and excellent storage stability on such a level that a change of the physical properties with time is unlikely to be caused. The present invention is directed to an aqueous pigment dispersion including: a pigment (A) including C.I. Pigment Orange 43(a) having a primary particle diameter of 150 nm or less; a pigment dispersing resin (B) including a radical polymerization polymer having an acid value of 80 to 150 mg KOH/g; and water (C).

Abstract: A vibration analyzer is configured to analyze vibration of a machine component and which is capable of performing an operation on a basis of a signal received from an information terminal and transmitting a signal obtained as a result of the operation to the information terminal. The vibration analyzer includes a vibration sensor configured to detect a vibration of the machine component, a filter processing unit configured to extract a predetermined frequency band from a waveform of a signal detected by the vibration sensor, and a calculation processing unit configured to analyze frequency of a waveform after filter processing obtained by the filter processing unit and to obtain spectrum data. Accordingly, it is possible to reduce a data amount to be transmitted between the analyzer and the information terminal, thereby shortening data transfer time.

Abstract: A resistive memory device includes at least one instance of a field effect transistor. The field effect transistor includes a semiconductor channel located between a source region and a drain region, and a gate stack. The gate stack includes a gate dielectric located on a surface of the semiconductor channel, a resistive memory material layer located on the gate dielectric, and a gate electrode containing a conductive material and located on the resistive memory material layer. The field effect transistors can be connected in a NAND configuration to provide three-dimensional and two-dimensional NAND resistive memory devices. Further, the field effect transistors can be connected as standalone devices to form a two-dimensional array of resistive memory devices.

Abstract: An imaging device including: a photoelectric converter that generates a signal charge by photoelectric conversion of light; a semiconductor substrate that includes a first semiconductor layer containing an impurity of a first conductivity type and an impurity of a second conductivity type different from the first conductivity type; and a first transistor that includes, as a source or a drain, a first impurity region of the second conductivity type in the first semiconductor layer. The first semiconductor layer includes: a charge accumulation region that is an impurity region of the second conductivity type, the charge accumulation region being configured to accumulate the signal charge; and a blocking structure that is located between the charge accumulation region and the first transistor, and the blocking structure includes a second impurity region of the second conductivity type.

Abstract: A problem to be solved by the present invention is to provide an aqueous pigment dispersion for adjustment of ink for ink jet recording in which the optical density OD of plain paper and the gloss value of photographic paper are compatible with each other at a high level. Another object of the present invention is to provide an ink for ink jet recording obtained by using the aqueous pigment dispersion. The present invention relates to an aqueous pigment dispersion including an aqueous medium, a dispersion (A), and a dispersion (B), wherein the dispersion (A) contains a pigment (a) and a pigment dispersant resin, and has a volume average particle diameter of 40 nm or more and less than 70 nm, and wherein the dispersion (B) contains a self-dispersing pigment (b), and has a volume average particle diameter of 70 nm or more and 210 nm or less.

Abstract: An imaging device includes: a semiconductor substrate; pixels arranged thereon; and a signal line through which a signal from a pixel is transferred. the pixel includes a photoelectric converter generating a charge, a region accumulating the charge, an amplification transistor having a gate electrically connected to the region, a first capacitor having a first terminal electrically connected to the region and a second terminal, a second capacitor having a third terminal electrically connected to the second terminal and a fourth terminal supplied with a voltage, a feedback transistor a source or a drain of which is electrically connected to the second terminal, and a feedback circuit forming a path through which an output from the amplification transistor is negatively fed back to the region. A part, which is from the feedback transistor to the first capacitor, of the path is closer to the semiconductor substrate than the signal line is.