Abstract: An imaging device includes a pixel. The pixel includes a charge accumulator containing an impurity of a first conductivity type, a first transistor, a second transistor, a first well region containing an impurity of a second conductivity type, and a second well region containing an impurity of the first conductivity type. The charge accumulator accumulates charge generated through photoelectric conversion. The first transistor includes a first gate electrode and a first diffusion region containing an impurity of the first conductivity type. The second transistor includes a second gate electrode and a second diffusion region containing an impurity of the second conductivity type. The first transistor and the charge accumulator are located in the first well region, and the second transistor is located in the second well region. A distance between the charge accumulator and the second transistor is larger than a distance between the charge accumulator and the first transistor.

Abstract: A solid-state imaging device includes a semiconductor layer, an insulating layer, a plurality of photodetection elements, a transistor, and a metal member. The insulating layer is provided on the semiconductor layer. The photodetection elements are provided in the semiconductor layer, and arranged in a line. The photodetection elements generate charges at light incidence. The transistor is provided in an amplifier circuit. The amplifier circuit is provided in the semiconductor layer and the insulating layer, is isolated from the photodetection elements, and amplifies electrical signals due to the charges. The metal member is disposed between a photodetection area and the transistor in a plan view. The photodetection area is provided with the photodetection elements.

Abstract: An abnormality diagnosis method of a rolling bearing used in rotating machinery includes: a time acquisition step of acquiring, from an output signal detected by a sensor during the rotation of the rolling bearing, an entry time when a rolling element enters a flaking region of a bearing ring, and an escape time when the rolling element escapes from the flaking region of the bearing ring; and an estimation step of estimating a flaking size based on a flaking passage time, which is a time difference between the entry time and the escape time. When the bearing ring receives repeated load from the rolling element, the progress of the flaking occurring in the bearing ring can be quantitatively evaluated.

Abstract: An imaging device includes a first pixel. The first pixel has a photoelectric converting portion, a first capacitance element, and a first transistor. The photoelectric converting portion converts incident light into signal charge. The first capacitance element includes a first terminal and a second terminal, the first terminal being electrically connected to the photoelectric converting portion in at least a period of exposure. The first transistor includes a first source and a first drain, one of the first source and the first drain is electrically connected to the second terminal, and a direct-current potential is applied to the other of the first source and the first drain.

Abstract: An imaging device including a semiconductor substrate; a photoelectric converter stacked on the semiconductor substrate, the photoelectric converter being configured to generate a signal through photoelectric conversion of incident light; a multilayer wiring structure located between the semiconductor substrate and the photoelectric converter; and circuitry located in the multilayer wiring structure and the semiconductor substrate, the circuitry being configured to detect the signal. The circuitry includes a first capacitance element and a second capacitance element; and a first transistor including a first source and a first drain in the semiconductor substrate and a first gate.

Abstract: A bonding film for bonding a semiconductor element and a substrate. The bonding film has an electroconductive bonding layer formed by molding an electroconductive paste including metal fine particles (P) into a film form, and a tack layer having tackiness and laminated on the electroconductive bonding layer. The tack layer includes 0.1% to 1.0% by mass of metal fine particles (M) with respect to the metal fine particles (P) in the electroconductive bonding layer, and the metal fine particles (M) have a melting point of 250° C. or lower.

Abstract: An imaging device including: a semiconductor substrate; pixels arranged in a first direction; and a signal line that extends in the first direction. Each of the pixels includes: a photoelectric converter that generates signal charge by photoelectric conversion, a region into which the signal charge is input, a first transistor that outputs a signal to the signal line according to an amount of the signal charge input into the region, and a capacity circuit that is coupled to a gate of the first transistor and that includes a first capacitive element, the first capacitive element including a first electrode, a second electrode and a first insulating layer between the first electrode and the second electrode, at least one of the first electrode and the second electrode containing a metal. Further, the signal line is located closer to the semiconductor substrate than the first capacitive element is.

Abstract: A masking method for honeycomb formed body, including bonding a film on at least one bottom face of a honeycomb formed body in a quadrangular prism shape such that an adhesive surface is in contact with the bottom face. The step of bonding the film includes bonding of the film so as to have a bottom face covering portion that covers a whole surface of the bottom face and a pair of outer edge portions along one pair of opposite sides of a quadrangle defining an outer peripheral shape of the bottom face and a pair of protruding portions protruding from another pair of opposite sides of the quadrangle. At least a part of the adhesive surface of each of the pair of protruding portions is bonded so as to be in contact with a pair of opposing lateral faces of the honeycomb formed body.

Abstract: An imaging device, including a photoelectric converter that generates a signal charge by photoelectric conversion of light; and a semiconductor substrate. The semiconductor substrate includes: a charge accumulation region that is an impurity region of a first conductivity type, and configured to accumulate the signal charge; a first impurity region of the first conductivity type, the first impurity region being one of a source or a drain of a first transistor and adjacent to the charge accumulation region; and a blocking structure located between the charge accumulation region and the first impurity region. The blocking structure includes a second impurity region of a second conductivity type different from the first conductivity type, a part of the second impurity region located on a surface of the semiconductor substrate, and the second impurity region is not in contact with the first impurity region on the surface of the semiconductor substrate.

Abstract: An imaging device includes: a semiconductor layer including a first region of a first conductivity, a second region of a second conductivity opposite to the first conductivity, and a third region of the second conductivity; a photoelectric converter electrically connected to the first region and converting light into charge; a first transistor including a first source, a first drain, and a first gate above the second region, the first region corresponding to the first source or drain; and a second transistor including a second source, a second drain, and a second gate of the second conductivity above the third region, the first region corresponding to the second source or drain, and the second gate being electrically connected to the first region. The concentration of an impurity of the second conductivity in the third region is higher than that of an impurity of the second conductivity in the second region.

Abstract: An imaging device includes a semiconductor substrate and pixels. Each of the pixels includes a first capacitive element including a first electrode provided above the semiconductor substrate, a second electrode provided above the semiconductor substrate, and a dielectric layer located between the first electrode and the second electrode. At least one selected from the group consisting of the first electrode and the second electrode has a first electrical contact point electrically connected to a first electrical element and a second electrical contact point electrically connected to a second electrical element different from the first electrical element. The first capacitive element includes at least one trench portion having a trench shape.

Abstract: An imaging device includes a semiconductor substrate and pixels, which includes a first pixel and second pixels adjacent thereto. Each of the pixels includes a first photoelectric conversion layer, a first pixel electrode, a first plug that electrically connects the semiconductor substrate and the first pixel electrode, a second photoelectric conversion layer, a second pixel electrode, and a second plug that electrically connects the semiconductor substrate and the second pixel electrode. In the first pixel and the plurality of second pixels, a distance between the closest plugs of the first plugs and the second plugs is larger than or equal to one-half of a pixel pitch, when viewed in a normal direction of the semiconductor substrate.

Abstract: An imaging device includes first and second pixels, arranged in a first direction, each of which includes: a photoelectric converter converting incident light into signal charge; an impurity region, in a semiconductor substrate, coupled to the photoelectric converter; a first transistor having a first gate coupled to the impurity region, and first source and drain; and a second transistor having second gate, source and drain. One of the second source and the second drain is the impurity region, and another is coupled to the first source or the first drain. The imaging device further includes a signal line, coupled to the first source or the first drain, and extends along the first direction and overlaps with both of the first and second pixels. The signal line is located on an opposite side from the impurity region across a center line of the first pixel.

Abstract: An imaging device includes pixels. Each of the pixels includes a first photoelectric conversion layer that converts light into first electric charge, a first pixel electrode that collects the first electric charge, a second photoelectric conversion layer that is arranged above the first photoelectric conversion layer and that converts light into second electric charge, and a second pixel electrode that collects the second electric charge. The area of the first pixel electrode is smaller than the area of the second pixel electrode.

Abstract: An imaging device includes pixels. Each of the pixels includes a first photoelectric conversion layer, a first pixel electrode, a second photoelectric conversion layer, a second pixel electrode, a third photoelectric conversion layer, a third pixel electrode, a first counter electrode, and a second counter electrode. The first pixel electrode, the first photoelectric conversion layer, the first counter electrode, the second photoelectric conversion layer, the second pixel electrode, the second counter electrode, the third photoelectric conversion layer, and the third pixel electrode are arranged in this order.

Abstract: The problem to be solved by the present invention is to provide a method for producing an aqueous pigment dispersion that has certain dispersion stability with which the formation of coarse particles with time and the settling of a pigment and the like with time can be reduced and that can be used for producing an ink having excellent discharge stability. The present invention relates to a method for producing an aqueous pigment dispersion, the method including kneading a composition including a pigment including one or more materials selected from the group consisting of a violet pigment, a green pigment, and an orange pigment and a resin, the composition having a nonvolatile content of 50% by mass or more, under predetermined conditions and subsequently performing a centrifugation treatment.

Abstract: An imaging device including: a photoelectric converter that generates a signal charge by photoelectric conversion of light; a semiconductor substrate that includes a first semiconductor layer containing an impurity of a first conductivity type and an impurity of a second conductivity type different from the first conductivity type; and a first transistor that includes, as a source or a drain, a first impurity region of the second conductivity type in the first semiconductor layer. The first semiconductor layer includes: a charge accumulation region that is an impurity region of the second conductivity type, the charge accumulation region being configured to accumulate the signal charge; and a blocking structure that is located between the charge accumulation region and the first transistor, and the blocking structure includes a second impurity region of the second conductivity type.

Abstract: An imaging device including a semiconductor substrate; pixels arranged on the semiconductor substrate in a first direction; and a signal line extending in the first direction. Each of the pixels includes a photoelectric converter generating signal charge by photoelectric conversion, a charge accumulation region that accumulates the signal charge output from the photoelectric converter, a first transistor that outputs a signal to the signal line according to an amount of the signal charge accumulated in the charge accumulation region, a capacity circuit that is coupled to a gate of the first transistor and that includes a first capacitive element, the first capacitive element including a first electrode, a second electrode and an insulating layer between the first electrode and the second electrode, at least one of the first electrode and the second electrode containing a metal. The first capacitive element is closer to the semiconductor substrate than the signal line.

Abstract: A joining film having sufficient connection heat resistance and high reliability, for which a joining process of joining a semiconductor element and a substrate is simple and easy, a tape for wafer processing, a method for producing a joined body, and a joined body. A joining film for joining a semiconductor element and a substrate includes an electroconductive joining layer formed by molding an electroconductive paste containing metal fine particles (P) into a film form; and a tack layer having tackiness and being laminated with the electroconductive joining layer. The tack layer is thermally decomposed by heating at the time of joining, the metal fine particles (P) of the electroconductive joining layer 13a are sintered, and thereby the semiconductor element and the substrate are joined.

Abstract: An inspection method for a pillar-shaped honeycomb filter having a honeycomb-shaped first end face and a honeycomb-shaped second end face, including: allowing gas containing fine particles to flow into the first end face; imaging the entire second end face covered with the sheet-like light using a camera while the gas that has flowed into the first end face flows out of the second end face through the filter, and generating an image of the entire second end face covered with the sheet-like light; selecting an inspection area of the second end face and measuring information concerning a sum of luminance of each pixel in the inspection area; and determining quality of the filter based on at least the information concerning the concentration of the fine particles in the gas before the gas flows into the first end face and the information concerning the sum of luminance.