Abstract: Provided is a method for manufacturing a high-strength galvanized steel sheet. Heating in a first half of oxidizing treatment is performed at a temperature of 400° C. to 750° C. in an atmosphere having a particular O2 concentration and a particular H2O concentration, and heating in a second half of the oxidizing treatment is performed at a temperature of 600° C. to 850° C. in an atmosphere having a particular O2 concentration and a particular H2O concentration. Subsequently, heating in a heating zone for reduction annealing is performed to a temperature of 650° C. to 900° C. at a particular heating rate in an atmosphere having a particular H2 concentration and a particular H2O concentration with the balance being N2 and inevitable impurities, and soaking in a soaking zone for the reduction annealing is performed in an atmosphere having a particular H2 concentration and a particular H2O concentration with the balance being N2 and inevitable impurities.

Abstract: Provided are a steel sheet having a tensile strength of 950 MPa or more and good toughness and a method for manufacturing the same. The steel sheet has a specific composition and a metallographic structure containing: a ferrite area fraction of 30% or less (including 0%), a tempered martensite area fraction of 70% or more (including 100%), and a retained austenite area fraction of 4.5% or less (including 0%), wherein the average aspect ratio of an iron based carbide, precipitated in tempered martensite grains, having a grain size in the largest 10% is 3.5 or more.

Abstract: A process for the preparation of a class of molecules, namely bicyclo[1.1.1]pentanes and derivatives thereof by reaction of [1.1.1]propellane with a variety of reagents under irradiation and/or in the presence of radical initiators to obtain bicyclo[1.1.1]pentanes asymmetrically substituted at position 1 and 3, which are useful as intermediates for the preparation of asymmetrically 1,3-disubstituted bicyclo[1.1.1]pentane derivatives and various physiologically active substances or materials containing these structures.

Abstract: A high-strength galvanized steel sheet having improved post-work impact resistance, a method for producing the high-strength galvanized steel sheet, and a high-strength member produced using the steel sheet. The high-strength galvanized steel sheet includes a steel sheet having a microstructure including ferrite and carbide-free bainite, martensite and carbide-containing bainite, and retained austenite, the total area fraction of ferrite and carbide-free bainite being 0% to 55%, the total area fraction of martensite and carbide-containing bainite being 45% to 100%, and the area fraction of retained austenite being 0% to 5%. Additionally, a galvanizing layer is disposed on the steel sheet. The density of gaps that cut across the entire thickness of the galvanizing layer in a cross section of the galvanizing layer, which is taken in the thickness direction so as to be perpendicular to the rolling direction, is 10 gaps/mm or more.

Abstract: High strength steel sheets that have excellent ductility and low-temperature toughness and methods for producing such high strength steel sheets. A high strength steel sheet includes a composition containing, on a mass % basis, C: 0.05% to 0.30%, Si: 0.5% to 2.5%, Mn: 0.5% to 3.5%, P: 0.003% to 0.100%, S: 0.02% or less, Al: 0.010% to 1.5%, and N: 0.01% or less, the balance being Fe and unavoidable impurities, and a steel microstructure including a ferrite phase with an area fraction of 10% to 70%, a hard second phase with an area fraction of 30% to 90%, and a carbide that is at an interface between a ferrite phase and a hard second phase and that has an average equivalent-circle diameter of 200 nm or less.

Abstract: A high-strength steel sheet having a composition containing C: 0.09% to 0.17%, Si: 0.6% to 1.7%, Mn: 3.5% or less, P: 0.03% or less, S: 0.005% or less, Al: 0.08% or less, N: 0.006% or less, Ti: 0.05% or less, and B: 0.0002% to 0.0030% on a mass basis, the remainder being Fe and inevitable impurities. The steel sheet also has a microstructure containing less than 20% (including 0%) of a ferrite phase, 75% or more (including 100%) of a tempered martensite phase, 10% or less (including 0%) of an untempered martensite phase, and less than 5% (including 0%) of a retained austenite phase in terms of area fraction. The tempered martensite phase has a Vickers hardness of 280 to 340 and a tensile strength of 950 MPa to 1,120 MPa.

Abstract: A method includes: annealing a steel strip by conveying the steel strip through a heating zone, a soaking zone, and a cooling zone in this order inside an annealing furnace; and applying a hot-dip galvanized coating onto the steel strip discharged from the cooling zone. Reducing gas or non-oxidizing gas supplied into the soaking zone includes humidified gas and dry gas. While a width and a sheet passing speed of the steel strip passing through the soaking zone are constant, a variation of pressure in the annealing furnace is suppressed by adjusting a flow rate of the dry gas, and a variation range of an amount of moisture supplied into the soaking zone by the humidified gas is limited to 20% or less.

Abstract: A communication connection apparatus controls connection of a communication line between a first and second communication devices comprising: a first connection port for the first communication device, including a first transmission unit through which a signal from the first communication device passes and a first reception unit through which a signal for the first communication device passes; a second connection port for the second communication device, including a second transmission unit through which a signal from the second communication device passes and a second reception unit through which a signal for the second communication device passes; a first connection line connecting the first transmission unit and the second reception unit; and a simulated-signal input unit that inputs a first signal to the first reception unit. On the first signal being input to the first reception unit, the first reception unit and the second transmission unit are physically disconnected.

Abstract: The present invention relates to the preparation of ?-substituted ?-amino carboxylic acids, preferably in enantiomerically enriched or even enantiomerically pure form, by a one-pot conversion of a ?-substituted ?-nitro dicarboxylic acid ester or of a ?-substituted ?-nitro dicarboxylate of general formula to a ?-substituted ?-nitro carboxylic acid and a subsequent reduction of the ?-nitro group to an amine group. In particular, the present invention relates to the preparation of (S)-pregabalin. In addition, the formation of enantiomerically enriched ?-substituted ?-amino carboxylic acids and ?-substituted ?-nitronate carboxylic acid salts are also described.

Abstract: A semiconductor device includes a first nitride semiconductor layer, a source electrode on the first nitride semiconductor layer, a drain electrode on the first nitride semiconductor layer, a gate electrode on the first nitride semiconductor layer and between the source electrode and the drain electrode, a gate field plate electrode that is separated from the first nitride semiconductor layer, and includes one end in direct contact with the gate electrode, and the other end positioned between the gate electrode and the drain electrode, a first interlayer insulating film that is separated from the gate electrode and is between the gate field plate electrode and the first nitride semiconductor layer, and a second interlayer insulating film that is between the gate electrode and the first interlayer insulating film and has a dielectric constant higher than a dielectric constant of the first interlayer insulating film.

Abstract: A semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer on the first nitride semiconductor layer and having a larger band gap than that of the first nitride semiconductor layer, a gate electrode on the second nitride semiconductor layer, drain and source electrodes on the second nitride semiconductor layer with the gate electrode interposed therebetween, interlayer insulating films on the second nitride semiconductor layer in a layer shape, and field plates including a first field plate at a greater distance from the second nitride semiconductor layer than the gate electrode and closer to the drain electrode than the gate electrode, and a second field plate at a larger distance from the second nitride semiconductor layer than the first field plate and nearer to drain electrode than the first field plate. The first and second field plates extend inwardly of the same interlayer insulating film.

Abstract: A method of producing a galvannealed steel sheet includes: annealing a steel strip by conveying the steel strip through a heating zone including a direct fired furnace, a soaking zone, and a cooling zone in this order in an annealing furnace; hot-dip galvanizing the steel strip discharged from the cooling zone; and heat-alloying a galvanized coating formed on the steel strip. Mixed gas of humidified gas and dry gas is supplied into the soaking zone from at least one gas supply port located in a region of lower ½ of the soaking zone in a height direction so that a dew point measured in a region of upper ? of the soaking zone in the height direction and a dew point measured in a region of lower ? of the soaking zone in the height direction are both ?20° C. or more and 0° C. or less.

Abstract: The present invention relates to the preparation of ?-substituted ?-amino carboxylic acids, preferably in enantiomerically enriched or even enantiomerically pure form, by a one-pot conversion of a ?-substituted ?-nitro dicarboxylic acid ester or of a ?-substituted ?-nitro dicarboxylate of general formula to a ?-substituted ?-nitro carboxylic acid and a subsequent reduction of the ?-nitro group to an amine group. In particular, the present invention relates to the preparation of (S)-pregabalin. In addition, the formation of enantiomerically enriched ?-substituted ?-amino carboxylic acids and ?-substituted ?-nitronate carboxylic acid salts are also described.

Abstract: A semiconductor device includes a first nitride semiconductor layer, a source electrode on the first nitride semiconductor layer, a drain electrode on the first nitride semiconductor layer, a gate electrode on the first nitride semiconductor layer and between the source electrode and the drain electrode, a gate field plate electrode that is separated from the first nitride semiconductor layer, and includes one end in direct contact with the gate electrode, and the other end positioned between the gate electrode and the drain electrode, a first interlayer insulating film that is separated from the gate electrode and is between the gate field plate electrode and the first nitride semiconductor layer, and a second interlayer insulating film that is between the gate electrode and the first interlayer insulating film and has a dielectric constant higher than a dielectric constant of the first interlayer insulating film.

Abstract: A semiconductor module includes a semiconductor device; a metal plate portion that includes a first surface on a side of the semiconductor device and has a fastening portion at an end thereof; a molded portion that is formed by molding a resin on the semiconductor device and the metal plate portion, a cooling plate portion that is a separate member from the metal plate portion, is provided on a side opposite to the first surface on the side of the semiconductor device, and includes fins on a side opposite to the side of the metal plate portion; wherein the fastening portion of the metal plate portion is exposed out of the molded portion, and the cooling plate portion includes a fastening portion at a position that corresponds to a position of the fastening portion of the metal plate portion.

Abstract: Provided is a threader for an overlock machine that allows the whole machine to be made compact and allows an operator to carry out threading reliably with one hand. The threader comprises: a threading shaft that moves vertically and is supported rotatably, with a shaft core being taken as a central axis; a threading hook that is fixed to the lower end of the threading shaft and that includes a hook part that can be inserted into the needle eye of a sewing needle and a first guide part that guides the hook part to the needle eye; and a thread guide member that guides a needle thread to the hook part in the vicinity of the descent limit point of the threading shaft. The threading hook is rotated by a predetermined angle so that the hook part is inserted into the needle eye of the sewing needle in the vicinity of the descent limit point of the threading shaft.

Abstract: Provided is a threader for an overlock machine that allows the whole machine to be made compact and allows an operator to carry out threading reliably with one hand. The threader comprises: a threading shaft that moves vertically and is supported rotatably, with a shaft core being taken as a central axis; a threading hook that is fixed to the lower end of the threading shaft and that includes a hook part that can be inserted into the needle eye of a sewing needle and a first guide part that guides the hook part to the needle eye; and a thread guide member that guides a needle thread to the hook part in the vicinity of the descent limit point of the threading shaft. The threading hook is rotated by a predetermined angle so that the hook part is inserted into the needle eye of the sewing needle in the vicinity of the descent limit point of the threading shaft.

Abstract: According to one embodiment, a semiconductor device includes a GaN-based semiconductor layer, a resonator that uses a first portion of the GaN-based semiconductor layer as a piezoelectric layer to resonate, and a transistor that uses a second portion of the GaN-based semiconductor layer as a channel layer.

Abstract: A power module is disclosed that includes a semiconductor element, a first cooling member and a second cooling member configured to sandwich the semiconductor element therebetween, a frame member configured to support the semiconductor element between the first cooling member and the second cooling member and molded resin disposed between the first cooling member and the second cooling member, wherein the frame member includes an adjusting member which adjusts a distance between the first cooling member and the second cooling member.

Abstract: [Problem] In a system for transmitting content data from a content reproducing apparatus to a content output apparatus, no complicated signal processing is required, setting change operations can be simplified, and the degradation of sound quality and the degradation of picture quality of video data are prevented.