Abstract: An endoscope system includes an imaging element, a voltage-current conversion circuit, a first coaxial cable, and an impedance conversion circuit. The imaging element generates a first voltage. The voltage-current conversion circuit is disposed inside or outside the imaging element and converts the first voltage into a first current. The first coaxial cable has a first conductor and a second conductor. The second conductor is disposed outside the first conductor. The first current is transmitted through the first conductor. The first current transmitted through the first conductor is input to the impedance conversion circuit. The impedance conversion circuit outputs a second current according to the first current. A second voltage according to the first current is input to the second conductor.

Abstract: A signal transmission circuit includes an impedance conversion circuit and a current-voltage conversion circuit. A first current is input to the impedance conversion circuit. The impedance conversion circuit outputs a second current according to the first current. The current-voltage conversion circuit converts the second current output from the impedance conversion circuit into a voltage. The impedance conversion circuit includes a first current source and a current output circuit. The first current source generates a reference current. The current output circuit outputs the second current according to the difference between the first current and the reference current or the sum of the first current and the reference current.

Abstract: An imaging device includes a plurality of pixels, a reference current generation circuit, a differential current generation circuit, a reference voltage generation circuit, a conversion circuit, and an output circuit. The differential current generation circuit generates a differential current according to a difference between a pixel current and a reference current. The conversion circuit converts the differential current into an output voltage on the basis of a first reference voltage. A second reference voltage is higher than the tint reference voltage when the output voltage at the time of resetting of the pixels is higher than the output voltage at the time of exposure of the pixels. The second reference voltage is lower than the first reference voltage when the output voltage at the time of resetting of the pixels is lower than the output voltage at the time of exposure of the pixels.

Abstract: A first voltage line supplies a constant first voltage in column circuits of an imaging device. A second voltage line supplies a second voltage that is lower than the first voltage and is constant. A third voltage line supplies a constant third voltage. A fourth voltage line supplies a fourth voltage that is lower than the third voltage and is constant. The first voltage line is electrically connected to a drain of an NMOS transistor, and the third voltage line is electrically connected to a gate of the NMOS transistor. The second voltage line is electrically connected to a drain of a PMOS transistor, and the fourth voltage line is electrically connected to a gate of the PMOS transistor.

Abstract: An imaging device includes: an imaging section in which a plurality of pixels each having a photoelectric conversion element are arranged in a matrix shape; a clock generator that generates a plurality of phase signals having different phases; a reference signal generator that generates a reference signal which increases or decreases with a lapse of time; a comparator that is disposed to correspond to each column of an array of the plurality of pixels, performs a comparing process of comparing a pixel signal output from each pixel with the reference signal, and outputs a first comparison result signal and a second comparison result signal indicating a result of the comparing process; a latch section that is disposed to correspond to the comparator and latches logic states of the plurality of phase signals; and a latch controller.

Abstract: An image sensor includes: photoelectric conversion elements configured to receive light and accumulate a charge corresponding to an amount of received light; an imaging signal generating unit that converts the charge accumulated in each photoelectric conversion element into a voltage to generate an imaging signal; and a reference signal generating unit that generates a reference signal having a fluctuation component with a same phase as the imaging signal. The imaging signal generating unit includes: a conversion circuit that converts the charge accumulated in each photoelectric conversion element into the imaging signal; a noise eliminating circuit that eliminates a noise component included in the imaging signal; and an output circuit that outputs the imaging signal from the conversion circuit. The reference signal generating unit includes a circuit having a same structure as that of at least one of the conversion circuit, the noise eliminating circuit, and the output circuit.

Abstract: An imaging device includes an imaging unit, a reference signal generation unit, m (m is an integer of 3 or more) number of column delay units, and a plurality of column AD conversion units. The plurality of column delay units is arranged so as to correspond to two or more and less than m of the column AD conversion units. Each of the plurality of column delay units includes a first delay circuit. The first delay circuit generates a plurality of first delay clocks. The column AD conversion unit includes a comparison unit, a latch unit, and a counter unit. The comparison unit compares a pixel signal with a reference signal, and outputs a control signal corresponding to a comparison result. The latch unit includes a plurality of latch circuits that latches the plurality of first delay clocks on the basis of a state change of the control signal.

Abstract: An encoding circuit includes a clock generating unit having a delay circuit in which n (n is a power of 2) delay units are connected together a latch unit configured to latch the plurality of delayed signals; and an encoding unit configured to encode state of each of the plurality of delayed signals, wherein the encoding unit encodes the state of each of the plurality of delayed signals by performing: a first operation of determining a position at which logic states of two or more delayed signals in a signal group change from High to Low, a second operation of determining a position at which logic states of two or more delayed signals in the signal group change from Low to High, and a third operation of determining that logic states of two or more signals including at least one delayed signal in the signal group are predetermined states.

Abstract: A first voltage line supplies a constant first voltage in column circuits of an imaging device. A second voltage line supplies a second voltage that is lower than the first voltage and is constant. A third voltage line supplies a constant third voltage. A fourth voltage line supplies a fourth voltage that is lower than the third voltage and is constant. The first voltage line is electrically connected to a drain of an NMOS transistor, and the third voltage line is electrically connected to a gate of the NMOS transistor. The second voltage line is electrically connected to a drain of a PMOS transistor, and the fourth voltage line is electrically connected to a gate of the PMOS transistor.

Abstract: An image capturing device includes: an image capturing section having a plurality of pixels disposed in a matrix and configured to output a pixel signal via a first signal line connected to pixels arranged in a first direction among the plurality of pixels; a plurality of calculators including: a comparator configured to compare a magnitude of a first analog signal with a threshold value to generate a digital value according to a comparison result; an amplification section configured to amplify the first analog signal by multiplying the first analog signal by an amplification degree ? (1<?<2) and output a second analog signal by executing computation according to the digital value; and a switching section configured to output one of the pixel signal and a ? estimation signal as the first analog signal when a most significant bit of a first digital value sequence is computed.

Abstract: An imaging element includes: a plurality of pixels configured to receive light from outside and generate and output an imaging signal depending on an amount of the light received; a first transfer line connected to the pixel; a second transfer line; a column selection switch configured to select one pixel column and output the imaging signal to the second transfer line; a column source follower including a gate to which the imaging signal transferred by the first transfer line is input, a drain end being connected to a power supply voltage, and a source end being connected to the column selection switch; a constant current source configured to drive the column source follower and read out the imaging signal to the second transfer line; and a current generating unit configured to flow a predetermined current to the source end side of the column source follower.

Abstract: An A/D conversion circuit includes: a reference signal generation section that includes an integrator circuit having a first constant current source and generates a reference signal that changes in accordance with a constant current output by the first constant current source; a comparison section that executes a comparison process between an analog signal and the reference signal and terminates the comparison process; a clock generation section that includes a delay section having delay units for delaying an input signal for a predetermined time and outputting delayed input signals in accordance with a constant current output by a second constant current source, and outputs a lower phase signal based on the signals output from the delay units; a latch section that latches the lower phase signal at a timing related to the termination of the comparison process; and a count section that counts a clock based on the lower phase signal.

Abstract: An imaging device includes: an imaging section in which a plurality of pixels each having a photoelectric conversion element are arranged in a matrix shape; a clock generator that generates a plurality of phase signals having different phases; a reference signal generator that generates a reference signal which increases or decreases with a lapse of time; a comparator that is disposed to correspond to each column of an array of the plurality of pixels, performs a comparing process of comparing a pixel signal output from each pixel with the reference signal, and outputs a first comparison result signal and a second comparison result signal indicating a result of the comparing process; a latch section that is disposed to correspond to the comparator and latches logic states of the plurality of phase signals; and a latch controller.

Abstract: An image sensor includes: photoelectric conversion elements configured to receive light and accumulate a charge corresponding to an amount of received light; an imaging signal generating unit that converts the charge accumulated in each photoelectric conversion element into a voltage to generate an imaging signal; and a reference signal generating unit that generates a reference signal having a fluctuation component with a same phase as the imaging signal. The imaging signal generating unit includes: a conversion circuit that converts the charge accumulated in each photoelectric conversion element into the imaging signal; a noise eliminating circuit that eliminates a noise component included in the imaging signal; and an output circuit that outputs the imaging signal from the conversion circuit. The reference signal generating unit includes a circuit having a same structure as that of at least one of the conversion circuit, the noise eliminating circuit, and the output circuit.

Abstract: A solid-state imaging apparatus includes a plurality of photoelectric conversion sections configured to generate a signal charge according to an amount of an incident light and disposed in a matrix, a first accumulation section configured to accumulate the signal charge, a first transfer section configured to transfer the signal charge from the photoelectric conversion sections to the first accumulation section, a second accumulation section configured to accumulate the signal charge accumulated in the first accumulation section, a second transfer section configured to transfer the signal charge accumulated in the first accumulation section to the second accumulation section, a reset section configured to reset the signal charge accumulated in the second accumulation section, an output section configured to output a signal according to the signal charge accumulated in the second accumulation section, and first and second control sections configured to control each section for every row or column.

Abstract: An imaging device includes: an imaging section in which a plurality of unit pixels having a photoelectric conversion element are arranged in the form of a matrix; a reference signal generating section configured to generate a reference signal that increases or decreases with a passage of time; a comparison section that includes a differential amplifier including a first input terminal electrically connected to the reference signal generating section and a second input terminal electrically connected to the unit pixels and configured to compare voltages of the first input terminal and the second input terminal and is arranged for each column or for a plurality of columns of a pixel array of the imaging section; and a measurement section configured to measure a comparison time from when the comparison section starts comparison until the comparison ends and generate data corresponding to the comparison time.

Abstract: An image capturing device includes: an image capturing section having a plurality of pixels disposed in a matrix and configured to output a pixel signal via a first signal line connected to pixels arranged in a first direction among the plurality of pixels; a plurality of calculators including: a comparator configured to compare a magnitude of a first analog signal with a threshold value to generate a digital value according to a comparison result; an amplification section configured to amplify the first analog signal by multiplying the first analog signal by an amplification degree ? (1<?<2) and output a second analog signal by executing computation according to the digital value; and a switching section configured to output one of the pixel signal and a ? estimation signal as the first analog signal when a most significant bit of a first digital value sequence is computed.

Abstract: An image pickup device may include: an image capturing unit; a reference signal generation unit; a comparison unit that compares analog signals to the reference signal and ends the comparison process at a timing at which the reference signal satisfies a predetermined condition with respect to the analog signals; a clock generation unit; a latch unit that retains the low-order phase signal as a latch signal at a timing related to the end of the comparison process; a count unit that counts a signal related to one of the low-order phase signals and generates a high-order digital signal; a detection unit that generates a low-order digital signal by sequentially comparing logic states of a plurality of bits of the latch signal retained by the corresponding latch unit and encoding the latch signal; and an arithmetic unit that performs an arithmetic process.

Abstract: A switching circuit comprising: a semiconductor layer including a source region, a drain region, and a channel region; a gate electrode disposed to be opposite to the channel region; a source wiring formed of a first material having higher conductivity than the semiconductor layer; a drain wiring formed of a second material having higher conductivity than the semiconductor layer; and a decoupling wiring formed of a third material having higher conductivity than the semiconductor layer, wherein the source region and the drain region are in a conductive state in a first period according to a voltage of the gate electrode, and the source region and the drain region are in a non-conductive state in a second period different from the first period, and wherein a voltage of the decoupling wiring is constant in at least a partial period of the second period.

Abstract: A reference signal generating circuit, an AD conversion circuit, and an imaging device are provided. A clock generating unit includes a delay section including delay units, each of which delays an input signal and outputs a delayed signal, and outputs a low-order phase signal based on a signal output from the delay section. A high-order current source cell unit includes high-order current source cells, each of which generates the same constant current. A low-order current source cell unit includes low-order current source cells weighted to generate constant currents having current values that differ by a predetermined proportion of a current value of the constant current generated by the high-order current source cell. Selection of the high-order current source cell is performed based on a clock obtained by dividing a clock based on the low-order phase signal.