Patents by Inventor Yoshiro Hirose

Yoshiro Hirose has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210098250
    Abstract: There is provided a technique that includes: substrate mounting plate where substrates are arranged circumferentially; rotator rotating the substrate mounting plate; gas supply structure disposed above the substrate mounting plate from center to outer periphery thereof; gas supplier including the gas supply structure and controlling supply amount of gas supplied from the gas supply structure; gas exhaust structure installed above the substrate mounting plate at downstream side of the gas supply structure in rotation direction; gas exhauster including the gas exhaust structure and controlling exhaust amount of gas exhausted from the gas exhaust structure; and gas main component amount controller including the gas supplier and the gas exhauster and controlling gas main component amount in the gas supplied from the gas supply structure to the substrates and the gas main component amount in the gas supplied to the substrates from the center to the outer periphery of the mounting plate.
    Type: Application
    Filed: March 11, 2020
    Publication date: April 1, 2021
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Takashi NAKAGAWA, Yoshiro HIROSE, Naofumi OHASHI, Tadashi TAKASAKI
  • Publication number: 20210098251
    Abstract: There is provided a technique that includes: substrate mounting plate where substrates are arranged circumferentially; rotator rotating the substrate mounting plate; gas supply structure disposed above the substrate mounting plate from center to outer periphery thereof; gas supplier including the gas supply structure and controlling supply amount of gas supplied from the gas supply structure; gas exhaust structure installed above the substrate mounting plate at downstream side of the gas supply structure in rotation direction; gas exhauster including the gas exhaust structure and controlling exhaust amount of gas exhausted from the gas exhaust structure; and gas main component amount controller including the gas supplier and the gas exhauster and controlling gas main component amount in the gas supplied from the gas supply structure to the substrates and the gas main component amount in the gas supplied to the substrates from the center to the outer periphery of the mounting plate.
    Type: Application
    Filed: March 23, 2020
    Publication date: April 1, 2021
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Takashi NAKAGAWA, Yoshiro HIROSE, Naofumi OHASHI, Tadashi TAKASAKI
  • Patent number: 10964531
    Abstract: There is provided a technique that includes: substrate mounting plate where substrates are arranged circumferentially; rotator rotating the substrate mounting plate; gas supply structure disposed above the substrate mounting plate from center to outer periphery thereof; gas supplier including the gas supply structure and controlling supply amount of gas supplied from the gas supply structure; gas exhaust structure installed above the substrate mounting plate at downstream side of the gas supply structure in rotation direction; gas exhauster including the gas exhaust structure and controlling exhaust amount of gas exhausted from the gas exhaust structure; and gas main component amount controller including the gas supplier and the gas exhauster and controlling gas main component amount in the gas supplied from the gas supply structure to the substrates and the gas main component amount in the gas supplied to the substrates from the center to the outer periphery of the mounting plate.
    Type: Grant
    Filed: March 23, 2020
    Date of Patent: March 30, 2021
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Takashi Nakagawa, Yoshiro Hirose, Naofumi Ohashi, Tadashi Takasaki
  • Publication number: 20210066073
    Abstract: There is provided a technique that includes: forming an oxide film containing a central atom X of a precursor on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer containing a component in which a first group is bonded to the central atom X on the substrate by supplying the precursor having a molecular structure in which the first group and a second group are bonded to the central atom X and having a bonding energy between the first group and the central atom X that is higher than a bonding energy between the second group and the central atom X, to the substrate; and (b) forming a second layer containing the central atom X by supplying an oxidizing agent to the substrate to oxidize the first layer, wherein in (a), the precursor is supplied under a condition in which the second group is desorbed and the first group is not desorbed from the central atom X contained in the precursor and the central atom X is adsorbed on
    Type: Application
    Filed: August 28, 2020
    Publication date: March 4, 2021
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yoshitomo HASHIMOTO, Katsuyoshi HARADA, Kimihiko NAKATANI, Yoshiro HIROSE, Masaya NAGATO, Takashi OZAKI, Tomiyuki SHIMIZU
  • Patent number: 10755921
    Abstract: A method of manufacturing a semiconductor device, includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing (a) supplying a precursor containing a first element to the substrate, (b) supplying a plasma-excited nitrogen gas to the substrate after the act (a), (c) supplying a reactant containing a second element to the substrate after the act (b), and (d) supplying a plasma-excited nitrogen gas to the substrate after the act (c). A gas purge of a space where the substrate is located and vacuumization of the space without gas supply are not performed between the act (a) and the act (b) and between the act (c) and the act (d).
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: August 25, 2020
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yoshitomo Hashimoto, Yoshiro Hirose, Tatsuru Matsuoka
  • Publication number: 20200243324
    Abstract: A film where a first layer and a second layer are laminated is formed on a substrate by performing: forming the first layer by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing: supplying a source to the substrate, and supplying a reactant to the substrate, under a first temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively; and forming the second layer by performing a second cycle a predetermined number of times, the second cycle including non-simultaneously performing: supplying the source to the substrate, and supplying the reactant to the substrate, under a second temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively, the second temperature being different from the first temperature.
    Type: Application
    Filed: April 10, 2020
    Publication date: July 30, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Tsukasa KAMAKURA, Takaaki NODA, Yoshiro HIROSE
  • Publication number: 20200243325
    Abstract: A film where a first layer and a second layer are laminated is formed on a substrate by performing: forming the first layer by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing: supplying a source to the substrate, and supplying a reactant to the substrate, under a first temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively; and forming the second layer by performing a second cycle a predetermined number of times, the second cycle including non-simultaneously performing: supplying the source to the substrate, and supplying the reactant to the substrate, under a second temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively, the second temperature being different from the first temperature.
    Type: Application
    Filed: April 10, 2020
    Publication date: July 30, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Tsukasa KAMAKURA, Takaaki NODA, Yoshiro HIROSE
  • Publication number: 20200115227
    Abstract: Described herein is a technique capable of forming a sacrificial film with a high wet etching rate to obtain a wet etching selectivity with respect to a movable electrode when manufacturing a cantilever structure sensor using MEMS (Micro-Electro-Mechanical Systems) technology. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) loading a substrate including a control electrode, a pedestal and a counter electrode formed thereon into a process chamber; and (b) forming a sacrificial film containing impurities on the control electrode, the pedestal and the counter electrode by supplying a first process gas in a non-plasma state containing the impurities and silicon to the process chamber through a first gas supply pipe together with supplying a second process gas in a plasma state containing oxygen to the process chamber through a second gas supply pipe.
    Type: Application
    Filed: September 17, 2019
    Publication date: April 16, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Naofumi OHASHI, Yoshiro HIROSE
  • Patent number: 10607833
    Abstract: There is provided a method of manufacturing a semiconductor device, including forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing supplying a precursor gas to the substrate; and supplying a first oxygen-containing gas to the substrate. Further, the act of supplying the precursor gas includes a time period in which the precursor gas and a second oxygen-containing gas are simultaneously supplied to the substrate.
    Type: Grant
    Filed: December 13, 2016
    Date of Patent: March 31, 2020
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Katsuyoshi Harada, Takashi Ozaki, Masato Terasaki, Risa Yamakoshi, Satoshi Shimamoto, Jiro Yugami, Yoshiro Hirose
  • Publication number: 20200095120
    Abstract: Described herein is a technique capable of forming a sacrificial film with a high wet etching rate so as to obtain a wet etching selectivity with respect to a movable electrode when manufacturing a cantilever structure sensor. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) placing a substrate with a sacrificial film containing impurities on a substrate support in a process chamber, wherein the sacrificial film is formed so as to cover a control electrode, a pedestal and a counter electrode formed on the substrate; (b) heating the substrate; and (c) modifying the sacrificial film into a modified sacrificial film by supplying an oxygen-containing gas in a plasma state to the substrate to desorb the impurities from the sacrificial film after (b).
    Type: Application
    Filed: September 4, 2019
    Publication date: March 26, 2020
    Inventors: Naofumi OHASHI, Yoshiro HIROSE
  • Patent number: 10600642
    Abstract: There is provided a technique which includes: forming a film containing at least Si, O and N on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: forming a first layer by supplying a precursor gas containing at least a Si—N bond and a Si—Cl bond and a first catalyst gas to the substrate; exhausting the precursor gas and the first catalyst gas in the process chamber through an exhaust system; forming a second layer by supplying an oxidizing gas and a second catalyst gas to the substrate to modify the first layer; and exhausting the oxidizing gas and the second catalyst gas in the process chamber through the exhaust system.
    Type: Grant
    Filed: January 30, 2018
    Date of Patent: March 24, 2020
    Assignee: Kokusai Electric Corporation
    Inventors: Yoshiro Hirose, Yoshitomo Hashimoto
  • Patent number: 10497561
    Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.
    Type: Grant
    Filed: February 7, 2019
    Date of Patent: December 3, 2019
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yoshinobu Nakamura, Kiyohiko Maeda, Yoshiro Hirose, Ryota Horiike, Yoshitomo Hashimoto
  • Patent number: 10340134
    Abstract: A method includes forming a film on a substrate by performing a cycle n times (where n is an integer equal to or greater than 1), the cycle including alternately performing: performing a set m times (where m is an integer equal to or greater than 1), the set including supplying a precursor to the substrate and supplying a borazine compound to the substrate; and supplying an oxidizing agent to the substrate.
    Type: Grant
    Filed: June 20, 2017
    Date of Patent: July 2, 2019
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yoshiro Hirose, Atsushi Sano, Katsuyoshi Harada
  • Publication number: 20190189422
    Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.
    Type: Application
    Filed: February 7, 2019
    Publication date: June 20, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yoshinobu NAKAMURA, Kiyohiko MAEDA, Yoshiro HIROSE, Ryota HORIIKE, Yoshitomo HASHIMOTO
  • Patent number: 10229829
    Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.
    Type: Grant
    Filed: April 11, 2018
    Date of Patent: March 12, 2019
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yoshinobu Nakamura, Kiyohiko Maeda, Yoshiro Hirose, Ryota Horiike, Yoshitomo Hashimoto
  • Patent number: 10199219
    Abstract: There is provided a method of manufacturing a semiconductor device, which includes: forming a first seed layer containing silicon and germanium on a substrate by performing, a predetermined number of times, a cycle which includes supplying a first process gas containing silicon or germanium and containing a halogen element to the substrate, supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing germanium and not containing a halogen element to the substrate; and forming a germanium-containing film on the first seed layer by supplying a fourth process gas containing germanium and not containing a halogen element to the substrate.
    Type: Grant
    Filed: June 12, 2017
    Date of Patent: February 5, 2019
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Satoshi Shimamoto, Yoshiro Hirose, Hajime Karasawa, Ryota Horiike, Naoharu Nakaiso, Yoshitomo Hashimoto
  • Patent number: 10163625
    Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.
    Type: Grant
    Filed: December 21, 2016
    Date of Patent: December 25, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshinobu Nakamura, Kiyohiko Maeda, Yoshiro Hirose, Ryota Horiike, Yoshitomo Hashimoto
  • Patent number: 10134586
    Abstract: A technique includes forming a laminated film on a substrate by performing a cycle a predetermined number of times. The cycle includes forming a first film which contains at least a predetermined element and oxygen, and forming a second film which contains at least the predetermined element, oxygen and carbon. The first film and the second film are laminated to form the laminated film.
    Type: Grant
    Filed: September 4, 2015
    Date of Patent: November 20, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Takafumi Nitta, Satoshi Shimamoto, Yoshiro Hirose
  • Patent number: 10128104
    Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by overlapping the following during at least a certain period: (a) supplying a first source to the substrate, the first source including at least one of an inorganic source containing a specific element and a halogen element and an organic source containing the specific element and the halogen element; (b) supplying a second source to the substrate, the second source including at least one of amine, organic hydrazine, and hydrogen nitride; and (c) supplying a third source to the substrate, the third source including at least one of amine, organic hydrazine, hydrogen nitride, and organic borane.
    Type: Grant
    Filed: March 30, 2017
    Date of Patent: November 13, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Atsushi Sano, Yoshiro Hirose
  • Patent number: 10121654
    Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.
    Type: Grant
    Filed: December 21, 2016
    Date of Patent: November 6, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshinobu Nakamura, Kiyohiko Maeda, Yoshiro Hirose, Ryota Horiike, Yoshitomo Hashimoto